Erscheinungsjahr
Datenquelle
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Oxygen-vacancy-related dielectric relaxations in SrTiO3 at high temperatures
NationallizenzAmerican Institute of Physics | 2013|Verlag: American Institute of Physics -
Excellent magnetocaloric properties of melt-extracted Gd-based amorphous microwires
NationallizenzAmerican Institute of Physics | 2012|Verlag: American Institute of Physics -
Strong oxygen pressure dependence of ferroelectricity in BaTiO3/SrRuO3/SrTiO3 epitaxial heterostructures
NationallizenzAmerican Institute of Physics | 2013|Verlag: American Institute of Physics -
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
NationallizenzAmerican Institute of Physics | 2013|Verlag: American Institute of Physics -
Minimizing quasiparticle generation from stray infrared light in superconducting quantum circuits
NationallizenzAmerican Institute of Physics | 2011|Verlag: American Institute of Physics -
Plasticity and ultra-low stress induced twin boundary migration in nanotwinned Cu by in situ nanoindentation studies
American Institute of Physics | 2014|Verlag: American Institute of Physics -
Quantum state characterization of a fast tunable superconducting resonator
NationallizenzAmerican Institute of Physics | 2013|Verlag: American Institute of Physics -
Advance in multi-hit detection and quantization in atom probe tomography
NationallizenzAmerican Institute of Physics | 2012|Verlag: American Institute of Physics -
Strong pinning in very fast grown reactive co-evaporated GdBa2Cu3O7 coated conductors
Freier ZugriffAmerican Institute of Physics | 2014|Verlag: American Institute of Physics -
Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below
Freier ZugriffAmerican Institute of Physics | 2012|Verlag: American Institute of Physics -
Nanotwins and stacking faults in high-strength epitaxial Ag/Al multilayer films
NationallizenzAmerican Institute of Physics | 2012|Verlag: American Institute of Physics -
P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process
NationallizenzAmerican Institute of Physics | 2012|Verlag: American Institute of Physics -
Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness
American Institute of Physics | 2013|Verlag: American Institute of Physics -
Effects of emitted electron temperature on the plasma sheath
American Institute of Physics | 2014|Verlag: American Institute of Physics -
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
American Institute of Physics | 2014|Verlag: American Institute of Physics -
Permittivity and permeability of Zn(Fe)/ZnO nanocapsules and their microwave absorption in the 2–18 GHz range
American Institute of Physics | 2014|Verlag: American Institute of Physics -
Oxygen concentration and its effect on the leakage current in BiFeO3 thin films
NationallizenzAmerican Institute of Physics | 2010|Verlag: American Institute of Physics -
A-centers in silicon studied with hybrid density functional theory
NationallizenzAmerican Institute of Physics | 2013|Verlag: American Institute of Physics -
Surface loss simulations of superconducting coplanar waveguide resonators
NationallizenzAmerican Institute of Physics | 2011|Verlag: American Institute of Physics -
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
NationallizenzAmerican Institute of Physics | 2012|Verlag: American Institute of Physics
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