EBIC in HEMT structures on SI substrates (Englisch)
- Neue Suche nach: Holt, D. B.
- Neue Suche nach: Napchan, E.
- Neue Suche nach: Wojcik, A.
- Neue Suche nach: Ammou, M.
- Neue Suche nach: Royal Microscopical Society
- Neue Suche nach: Institute of Physics; Electron Microscopy and Analysis Group
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Holt, D. B.
- Neue Suche nach: Napchan, E.
- Neue Suche nach: Wojcik, A.
- Neue Suche nach: Ammou, M.
- Neue Suche nach: Cullis, A. G.
- Neue Suche nach: Staton-Bevan, A. E.
- Neue Suche nach: Hutchison, J. L.
- Neue Suche nach: Royal Microscopical Society
- Neue Suche nach: Institute of Physics; Electron Microscopy and Analysis Group
- Neue Suche nach: Materials Research Society
In:
Microscopy of semiconducting materials 1993
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731-734
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1993
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:EBIC in HEMT structures on SI substrates
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Beteiligte:Holt, D. B. ( Autor:in ) / Napchan, E. ( Autor:in ) / Wojcik, A. ( Autor:in ) / Ammou, M. ( Autor:in ) / Cullis, A. G. / Staton-Bevan, A. E. / Hutchison, J. L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society
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Kongress:8th Conference, Microscopy of semiconducting materials 1993 ; 1993 ; Oxford
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Erschienen in:CONFERENCE SERIES- INSTITUTE OF PHYSICS ; 134 ; 731-734
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Verlag:
- Neue Suche nach: Institute of Physics Publishing
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Erscheinungsdatum:01.01.1993
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Format / Umfang:4 pages
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Anmerkungen:Also known as MSM VIII
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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High-resolution transmission electron microscopy of semiconductor interfacesIshida, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 1
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Analysis of the information in transmission electron micrographsOurmazd, A. / Schwander, P. / Kisielowski, C. / Baumann, F. H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 11
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Strain relaxation induced local crystal tilts at Si/SiGe interfaces in cross-sectional transmission electron microscope specimensWalther, T. / Boothroyd, C. B. / Humphreys, C. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 11
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Towards a systematic pattern analysis in high resolution electron microscopy: application to quantitative chemical analysisRouviere, J.-L. / Bonnet, N. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 15
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Compositional and structural analysis of strained Si/SiGe multilayers and interfaces by high resolution transmission electron microscopyStenkamp, D. / Jaeger, W. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 15
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Compositional and structural analysis of strained Si/SiGe multilayers and interfaces by high resolution transmission electron microcopyStenkamp, D. / Jäger, W. et al. | 1993
- 17
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Direct determination of defocus, thickness and composition from high-resolution electron microscopy (HREM) lattice images of group-IV semiconductorsStenkamp, D. / Strunk, H. P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 21
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Characterization of Al~xIn~1~-~xAs/InP heterointerfaces by transmission electron microscopyCarlino, E. / Catalano, M. / Giannini, C. / Tapfer, L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 23
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Effect of the static atomic displacements in quantitative HREM of III-V alloysGlas, F. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 25
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Ga~2Te~3: a new interfacial phase in ZnTe/(100)GaSbChou, C. T. / Hutchison, J. L. / Casanove, M.-J. / Cherns, D. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 27
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Self-assembled monolayers of semiconductor quantum dots characterised by high resolution electron microscopyHull, P. J. / Salata, O. V. / Hutchison, J. L. / Dobson, P. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 29
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The characterization of delta doping by fresnel contrast analysisDunin-Borkowski, R. E. / Stobbs, W. M. / Perovic, D. D. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 31
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TEM/HREM characterisation of self-organized (In,Ga)As quantum dotsRuvimov, S. / Werner, P. / Scheerschmidt, K. / Richter, U. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 33
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Structure refinement of the atomic model of the {113} defect in SiTakeda, S. / Koyama, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 35
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High-resolution electron microscope analysis of (AlAs)~n(GaAs)~m short-period superlattices in (110) and (100) projectionsCerva, H. / Riechert, H. / Bernklau, D. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 37
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Early stages of rod-like defect formation in siliconWerner, P. / Reiche, M. / Heydenreich, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 39
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HREM-analysis of interfaces on the basis of molecular dynamic structure relaxationsScheerschmidt, K. / Ruvimov, S. / Timpel, D. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 41
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{113} defects in He^+ implanted germaniumHutchison, J. L. / Aseev, A. L. / Fedina, L. I. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 43
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The structure of interfaces in semiconductor low-dimensional systems grown by MBEGutakovski, A. K. / Aseev, A. L. / Hutchison, J. L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 47
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Strain determination in bilayer systems using HREMRobertson, M. D. / Corbett, J. M. / Currie, J. E. / Webb, J. B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 47
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HREM characterization of small CdTe particlesHillebrand, R. / Hofmeister, H. / Scheerschmidt, K. / Heydenreich, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 51
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Two beam high resolution dark field imaging: applications in epitaxial semiconductor materialsWright, A. C. / Williams, J. O. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 53
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A contribution to the quantitative comparison of experimental high-resolution electron micrographs and image simulationsWalther, T. / Hetherington, C. J. D. / Humphreys, C. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 55
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Dynamic characteristics of dislocations in semiconductorsSumino, K. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 57
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A fuzzy logic approach to quantitative HREMHillebrand, R. / Werner, P. / Hofmeister, H. / Goesele, U. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 61
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Ultra high resolution quantitative analysis of nano-structuresBangert, U. / Harvey, A. J. / Gardelis, S. / Keyse, R. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 63
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Structural properties of dislocations in plastically deformed InPLuysberg, M. / Gerthsen, D. / Urban, K. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 65
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Structure and conductivity of films from various kinds of oriented carbon nanotubesKiselev, N. A. / Lebedev, O. I. / Kiselev, A. N. / Bondarenko, V. I. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 67
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Investigation of dislocations in plastically deformed InPLe Bourhis, E. / Zozime, A. / Riviere, A. / Riviere, J.-P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 69
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Partial dislocations in semiconductors: structure, properties and their role in strain relaxationPirouz, P. / Ning, X. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 71
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An EBIC investigation of alpha, beta and screw dislocations in gallium arsenideGalloway, S. A. / Wilshaw, P. R. / Fell, T. S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 77
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Structure of dislocations formed in Ge(Si) by glide on secondary glide planesAlbrecht, M. / Stenkamp, D. / Strunk, H. P. / Jaeger, W. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 79
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Direct atomic resolution imaging of dislocation core structures in a 300 kV STEMMcGibbon, A. J. / Pennycook, S. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 83
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Models for the Lomer dislocation core at the GaAs/Si interfaceVila, A. / Cornet, A. / Morante, J. R. / Ruterana, P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 83
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HREM and DLTS of = 37(610)[001] tilt grain boundary in GeBochkareva, N. I. / Ruvimov, S. S. / Scholz, R. / Scheerschmidt, K. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 87
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Twist Boundaries in silicon: a model systemGafiteanu, R. / Chevacharoenkul, S. / Goesele, U. M. / Tan, T. Y. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 87
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Faulted dipoles in indium-doped GaAsYonenaga, I. / Brown, P. D. / Burgess, W. G. / Humphreys, C. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 91
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Defects and silicon integrated circuitPoate, J. M. / Eaglesham, D. J. / Gossmann, H. J. / Higashi, G. S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 91
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Can transmission electron holography reveal the electric potential of linear charged dislocations?Cavalcoli, D. / Matteucci, G. / Muccini, M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 95
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Segregation and precipitation of iron in a = 25 silicon bicrystalPortier, X. / Rizk, R. / Nouet, G. / Allais, G. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 99
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Structural transformations of As-doped polycrystalline silicon layers used as emitter contactsSpinella, C. / Cacciato, A. / Rimini, E. / Fallice, G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 99
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The contrast of grain boundary dislocationsJoksch, M. / Wurzinger, P. / Pongratz, P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 103
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Silicon wafer bonding technology: TEM study of low-angle twist boundariesBenamara, M. / Rocher, A. / Laporte, A. / Sarrabayrouse, G. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 103
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Grown-in microprecipitates in CZ-SiNakai, K. / Nakashizu, T. / Haga, H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 107
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HRTEM investigation of microdefects in FZ-silicon crystal grown at high rateSorokin, L. M. / Hutchison, J. L. / Ponomoriova, N. B. / Falkevich, E. S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 107
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EBIC studies of grain boundariesRaza, B. / Holt, D. B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 111
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Formation and dissolution of Si-O-C amorphous precipitates in Czochralski silicon heavily doped with carbonChevacharoenkul, S. / Wijaranakula, W. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 113
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Electron beam induced current studies of a Ni- and Fe-contaminated = 25 silicon bicrystalIhlal, A. / Rizk, R. / Voivenel, P. / Nouet, G. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 115
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Recombination at dislocations associated with oxygen precipitationCavallini, A. / Vandini, M. / Corticelli, F. / Parisini, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 117
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The introduction of dislocations in low misfit epitaxial systemsPerovic, D. D. / Houghton, D. C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 121
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Microstructure and electronic behaviour of decorated stacking faults in siliconQian, Y. / Evans, J. H. / Peaker, A. R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 125
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Role of oxygen in copper precipitation at oxidation stacking faults in siliconCorreia, A. / Ballutaud, D. / Maurice, J.-L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 129
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TEM and HREM studies of As-implanted high-dose oxygen implanted silicon at doses and energies suitable for thin-film silicon-on-insulator substratesMarsh, C. D. / Li, Y. / Nejim, A. / Kilner, J. A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 133
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Depth of amorphized ion implanted silicon zones predicted from point defect density calculations and TEM cross sectionsCerva, H. / Hobler, G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 135
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Relaxation of large lattice-mismatched (001) heterostructures by Lomer dislocationsRocher, A. M. / Kang, J. M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 137
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The crystalline-to-amorphous transition in Ge-implanted silicon and its role in the formation of end-of-range defectsSeibt, M. / Imschweiler, J. / Hefner, H.-A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 141
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TEM investigation of the influence of an overlayer on the structure of implanted p-n junctions in siliconKatcki, J. / Bakowski, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 143
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Growth mechanisms of semiconductor heterostructures with large misfitsGerthsen, D. / Tillmann, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 145
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TEM study of silicon after irradiation by 600 MeV protonsPaschoud, F. / Victoria, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 149
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In situ HVEM studies of electron irradiation induced {113}-defect generation in siliconVanhellemont, J. / Romano-Rodriguez, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 153
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Imaging of semiconductor defects using ion channellingKing, P. J. C. / Breese, M. B. H. / Wilshaw, P. R. / Booker, G. R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 153
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The origin of misfit dislocations and the surface cross-hatch pattern in low-misfit strained epitaxial layersBeanland, R. / Boyd, A. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 157
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Defects in polycrystalline CVD diamond layers analysed with the TEMWurzinger, P. / Joksch, M. / Pongratz, P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 159
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Diamond defects and the nucleation of misfit dislocations in ZnTe/GaSbMylonas, S. / Cherns, D. / Ashenford, D. E. / Lunn, B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 163
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Morphology and strain relief in the InGaAs/GaAs epitaxial systemCullis, A. G. / Pidduck, A. J. / Emeny, M. T. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 165
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In situ TEM studies of the crystallization of amorphous silicon: the role of silicidesBatstone, J. L. / Hayzelden, C. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 169
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TEM/Observations of relaxation in In~xGa~1~-~xAs on (111)B GaAsBeanland, R. / Sacedon, A. / Calleja, E. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 173
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Study of relaxation in strained in InGaAs/GaAs and (AlGa)InAs/GaAs heterostructures by TEM and HRXRDBert, N. A. / Faleev, N. N. / Musikhin, Y. G. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 173
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In situ high resolution electron microscopy of metal-contact induced crystallization of amorphous semiconductorsKonno, T. J. / Sinclair, R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 177
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Surface ripples, crosshatch pattern, dislocation formation: interplay of elastic and plastic strain relaxation mechanismsAlbrecht, M. / Christiansen, S. / Hansson, P. O. / Michler, J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 177
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Contrast arising from 1/2(101) dislocations associated with steps in thin-film type-B CoSi~2/Si(111) interfacesDaykin, A. C. / Kiely, C. J. / Pond, R. C. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 181
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TEM investigation of ion beam synthesized buried FeSi~2 in (001) siliconTavares, J. / Bender, H. / Lauwers, A. / Maex, K. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 183
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Relaxation of (001) Si/Si~1~-~xGe~x/Si heterostructuresXin, Y. / Brown, P. D. / Schaeublin, R. E. / Humphreys, C. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 185
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Structural properties of FeSi~2/Si(111) heterostructures grown by gas source molecular beam epitaxyGerthsen, D. / Schaefer, H. C. H. / Roesen, B. / Rizzi, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 187
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A formation of three-dimensional misfit dislocation networks in SiGe/Si and SiGe/Ge heterostructuresVdovin, V. I. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 191
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Silicide precipitate formation and solid phase regrowth of Ni^+-implanted amorphous siliconKuznetsov, A. Y. / Mordkovich, V. N. / Vyatkin, A. F. / Khodos, I. I. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 191
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Effects of strain and temperature on the roughness transition in epitaxial growthHarvey, A. J. / Bangert, U. / Dieker, C. / Hardtdegen, H. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 195
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Morphological transformations of MBE-grown In~0~.~6Ga~0~.~4As islands on GaAs (001) substratesTillmann, K. / Gerthsen, D. / Pfundstein, P. / Foerster, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 195
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Platinum segregation and platinum silicide precipitation in Si/SiO~2 interfaces and along dislocationsLaurent, B. / Pichaud, B. / Lhorte, A. / Quoirin, J. B. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 199
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Relationship between the growth temperature and the 3D morphology of GaInP/InAsP strained heterostructures grown by Metal-Organic Vapour Phase EpitaxyPonchet, A. / Rocher, A. / Ougazzaden, A. / Mircea, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 199
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TiSi~2/Si interface of disilicide formed by annealing of multilayer Ti/Si structures on siliconNassiopoulos, A. G. / Fragis, N. / Travlos, A. / Revva, P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 203
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Solid phase reactions in the Au/InP system studied by TEMPecz, B. / Radnoczi, G. / Barna, P. B. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 203
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Interfacial defect control of highly mismatched (100) InAs/GaAs heterostructures grown by MBETrampert, A. / Tournie, A. / Ploog, K. H. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 207
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Microscopy of ULSI devicesBrown, J. / Boden, E. G. / Hoener, C. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 207
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Crack formation in tensile strained III-V epilayers grown on InP substratesMurray, R. T. / Kiely, C. J. / Hopkinson, M. / Goodhew, P. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 211
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Strain relaxation in step and linearly-graded InGaAs buffer layers on (001) GaAsPacheco, F. J. / Gonzalez, D. / Molina, S. I. / Villar, M. P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 215
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The possibility of low edge dislocation densities in InGaAs/GaAs step-graded layersMacPherson, G. / Beanland, R. / Goodhew, P. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 215
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Measurement of sub-nanometre film thicknesses in silicon VLSIAugustus, P. D. / Skinner, D. K. / Goulding, M. R. / Nigrin, S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 219
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The growth of InAs layers on vicinal GaAs (110) substrates by MBEZhang, X. / Pashley, D. W. / Neave, J. H. / Kamiya, I. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 221
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TEM observation of thin oxide-nitride-oxide layersAnderson, R. M. / Benedict, J. / Flaitz, P. / Klepeis, S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 223
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Microstructure of Ge/Si(001) heteroepitaxy with surfactantsMatsuhata, H. / Sakamoto, K. / Kyoya, K. / Miki, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 225
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On the quantitative characterization of strain distributions at thin film edgesJanssens, K. G. F. / Vanhellemont, J. / Maes, H. E. / Van der Biest, O. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 227
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Study of 2D nucleation at silicon homoepitaxy by means of UHV REMLatyshev, A. V. / Krasilnikov, A. B. / Aseev, A. L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 229
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Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopyArmigliato, A. / Balboni, R. / De Wolf, I. / Frabboni, S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 231
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An investigation into gas source molecular beam epitaxy deposition onto non-planar InP patterned substratesMullan, C. A. / Robinson, B. J. / Thompson, D. A. / Weatherly, G. C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 235
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Origin of course contrast modulations in In~0~.~5~3Ga~0~.~4~7As layersLee, K. / Johnson, W. C. / Mahajan, S. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 235
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On the formation of trench-induced dislocations in dynamic random access memories (DRAMs)Dellith, M. / Booker, G. R. / Kolbesen, B. O. / Bergholz, W. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 239
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A cross-section TEM investigation of SOI transistor structuresWard, M. C. L. / Cullis, A. G. / Brunson, K. M. / Smith, P. W. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 241
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Correlation between surface topography and atomically ordered domains in MOCVD/InGaAs layersSeong, T.-Y. / Booker, G. R. / Norman, A. G. / Harris, P. J. F. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 245
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Changes in electrical device characteristics during the formation of dislocations in situ in the TEMRoss, F. M. / Hull, R. / Bahnck, D. / Bean, J. C. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 245
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Disordering of CuPt-type ordered structure in GaInP under electron irradiationNoda, N. / Takeda, S. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 249
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TEM and photoluminescence characterization of ordered domains in Ga~0~.~5~1In~0~.~4~9P alloysNasi, L. / Lazzarini, L. / Salviati, G. / Fermi, F. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 249
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High resolution scanning electron microscopy in mesoscopic physicsWilliams, D. A. / Pettersen, E. K. / Paul, D. J. / Ahmed, H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 253
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Microstructure of GaAs/AlAs and InGaAs/AlAs resonant tunnelling diodes and its correlation with the electrical propertiesDieker, C. / Gerthsen, D. / Foerster, A. / Lange, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 253
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Transmission electron microscopy and photoluminescence studies of In~1~-~xGa~xAs~yP~1~-~y films grown on (100) InP substratesOkada, T. / LaPierre, R. / Mullan, C. / Weatherly, G. C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 257
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Characterization of highly strained Ga~0~.~5In~0~.~5P/InP interfacesLakner, H. / Stammen, J. / Liu, Q. / Prost, W. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 259
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New techniques for the study of degradation modes in semiconductor lasers using a combination of transmission electron microscopy, focused ion beam sputtering and electroluminescence imagingHull, R. / Bahnck, D. / Stevie, F. / Harriott, L. R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 263
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Study by transmission electron microscopy of GaInSb layers grown on (001) GaAs substrates by molecular beam epitaxyAragon, G. / De Castro, M. J. / Perez-Camacho, J. J. / Briones, F. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 265
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Electron beam charging thermography - a novel technique to study thermal effects at mirrors of laser diodesJakubowicz, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 267
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Quantitative convergent beam electron diffraction (CBED) from III-V semiconductor heterostructures and interfaces with nanoscale spatial resolutionLakner, H. / Ungerechts, S. / Kubalek, E. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 269
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Composition variations, clustering and composition fluctuations in III-V alloysGlas, F. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 273
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TEM method of study of (AlGa)As and (InGa)(AsP) heterostructures on profiled substratesKatcki, J. / Ratajczak, J. / Malag, A. / Piskorski, M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 277
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X-ray topographic imaging and x-ray elastic measurements in the GaAs/Ge heteroepitaxial systemBurle, N. / Pichaud, B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 279
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Nature and origin of atomic ordering in III-V semiconductor alloysNorman, A. G. / Seong, T.-Y. / Philips, B. A. / Booker, G. R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 281
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Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-Al~xGa~1~-~xAs superlatticesCastell, M. R. / Perovic, D. D. / Howie, A. / Ritchie, D. A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 285
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TEM characterisation of GaN layers grown by MOCVD on Al~2O~3 (0001)Rouviere, J.-L. / Arlery, M. / Bourret, A. / Niebuhr, R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 289
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Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substratesVermaut, P. / Ruterana, P. / Nouet, G. / Salvador, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 291
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On the occurrence of phase separation in InGaAs/InP systemsPeiro, F. / Cornet, A. / Morante, J. R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 293
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Structural characterization of In~1~-~xMn~xAs and Ga~1~-~xMn~xAs epitaxial magnetic films grown by MBE on GaAsBender, H. / Van Esch, A. / Van Roy, W. / Oesterholt, R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 295
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The study of MBE grown (001) In~xGa~1~-~xP/GaAs strained layer heterostructures by TEM and CLWang, J. / Steeds, J. W. / Hopkinson, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 297
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TEM investigation of Ge~xSi~1~-~x/Si(111) heterostructures grown by MBELebedev, O. I. / Kiselev, N. A. / Vasiliev, A. G. / Orlikovsky, A. A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 301
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TEM characterization of Si~1~-~x~-~yGe~xC~y and Si~1~-~yC~y layers grown with molecular beam epitaxy on (001)Si substratesBugiel, E. / Ruvimov, S. / Osten, H. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 301
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TEM and TED studies of fine scale contrasts in InGaAs layers grown by metalorganic chemical vapour depositionSeong, T.-Y. / Booker, G. R. / Norman, A. G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 305
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Influence of strain and composition on TEM speckle contrast and the morphology of quaternary layersBangert, U. / Harvey, A. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 305
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Deformation microtwinning in heteroepitaxial films on offcut (001) substratesCheng, T. T. / Wei, X. L. / Aindow, M. / Jones, I. P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 309
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Elastic strain-induced surface roughening and the nucleation of misfit dislocations in heteroepitaxial thin filmsPerovic, D. D. / Houghton, D. C. / Noel, J. P. / Rowell, N. L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 309
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Depth resolved X-ray studies of tilt distributions in CdTe/GaAs epilayersPort, R. I. / Moore, C. D. / Tanner, B. K. / Durose, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 313
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Generation of misfit dislocations in ultra-thin semiconductor filmsPonce, F. A. / Gonzales, L. / Mazuelas, A. / Briones, F. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 313
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Effect of substrate temperature on the microstructure of CdTe thin films grown by plasma-enhanced MOCVD on (001) GaAsChester, R. / Cheng, T. T. / Aindow, M. / Jones, I. P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 317
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A comparison of the growth mode and strain relief behaviour of In~xGa~1~-~xAs layers on GaAs(001) and (110)Zhang, X. / Pashley, D. W. / Fawcett, P. N. / Neave, J. H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 317
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TEM study of (Cd,Hg)Te grown by Molecular Beam EpitaxySelvig, E. / Gjoennes, K. / Olsen, A. / Colin, T. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 321
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Analysis of epitaxial CuInSe~2 layers grown onto GaAs substrates by a hybrid magnetron sputtering techniqueMullan, C. A. / Kiely, C. J. / Rockett, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 321
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Relaxed epitaxial layers: the effect of an added interfaceKidd, P. / Dunstan, D. J. / Grey, R. / David, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 325
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TEM and XRD study of strain release in GaAs/InP and InP/GaAs heterostructures grown by MOVPELazzarini, L. / Attolini, G. / Bertone, D. / Franzosi, P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 325
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Domain structures in CuGaSe~2 epitaxial filmsGu, G.-L. / Lin, S.-B. / Tseng, B.-H. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 329
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Lattice defects in non-stoichiometric CuInSe~2 thin filmsThanner, E. / Eibl, O. / Pongratz, P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 329
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HREM strain measurement of ultra thin ZnTe and MnTe layers grown in CdTeJouneau, P. H. / Tardot, A. / Feuillet, G. / Mariette, H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 333
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Structural aspects of the combination of Si and YBa~2Cu~3O~7~-~xVasiliev, A. L. / Van Tenderloo, G. / Boikov, Y. / Olsson, E. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 333
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Relaxation phenomena in strained Si~1~-~xGe~x layers on planar and patterned Si substratesBugiel, E. / Zaumseil, P. / Dietrich, B. / Osten, H. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 337
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TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlatticesSalviati, G. / Ferrari, C. / Lazzarini, L. / Franchi, S. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 337
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Thermal stress-induced defects in GeSi/Si heterostructuresRoos, B. / Ernst, F. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 341
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Electron microscopy of epitaxial structuresKiselev, N. A. / Vasiliev, A. L. / Lebedev, O. I. / Givargizov, E. I. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 349
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Interfacial structure of GaSb/InAs superlattices grown by migration enhanced epitaxyTwigg, M. E. / Bennett, B. R. / Shanabrook, B. V. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 349
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Networks of growth steps on as-grown GaAs(001) vicinal surfacesMarek, T. / Strunk, H. P. / Bauser, E. / Lu, Y. C. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 353
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HRTEM imaging of monolayer interfaces in MOCVD grown GaSb/InAs superlatticesMurgatroyd, I. J. / Mason, N. J. / Walker, P. J. / Booker, G. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 353
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TEM analysis of the initial stage of GaAs ALMBE layers on SiVila, A. / Cornet, A. / Morante, J. R. / Ruterana, P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 357
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Strain relaxation of lattice-mismatched In~0~.~2Ga~0~.~8As/GaAs superlattices on GaAs (001) substratesLentzen, M. / Gerthsen, D. / Foerster, A. / Urban, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 357
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TEM study of the GaAs/Si system grown by two-step MBE/SPE methodNahm, S. / Paek, M. C. / Cho, K. I. / Kwon, O. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 361
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TEM characterization of GaAs on Si layers grown by low pressure OMCVDMeddeb, J. / Ambri, M. / Pitaval, M. / Draidia, N. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 361
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A TEM study of InGaAs/GaAs SQWs grown by MOVPE on (100) and off (100) GaAs substratesFrigeri, C. / Di Paola, A. / Ritchie, D. M. / Longo, F. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 365
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Structural and optical study of InGaAs/InP single layers and multi quantum wells grown under tensile strain conditionsAntolini, A. / Papuzza, C. / Schiavini, G. / Soldani, D. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 365
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HREM study of GaAs layers grown on Ge by the close-spaced vapour transport techniqueGuelton, N. / Feuillet, G. / St-Jacques, R. G. / Dodelet, J. P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 369
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Defect study of InAs/GaAs and GaP/GaAs double heterostructureAragon, G. / Molina, S. I. / Gonzalez, Y. / Gonzalez, L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 371
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Fabrication and TEM characterisation of V-groove InGaAs quantum wiresJouneau, P.-H. / Bobard, F. / Marti, U. / Robadey, J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 373
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The effect of growth interrupts on CBE grown InPBrown, P. D. / Bithell, E. G. / Humphreys, C. J. / Skevington, P. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 375
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Microscopy characterization of quantum wires grown on grooved substratesGustafsson, A. / Dwir, B. / Reinhardt, F. / Biasiol, G. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 377
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Defect characterization in MOCVD InP/GaInAs/InP layersJin, N. Y. / Booker, G. R. / Blunt, R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 379
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Growth, structure and photoluminescence of SiGe/Si quantum wires and dots on patterened Si (001) substratesDieker, C. / Hartmann, A. / Jaeger, W. / Bangert, U. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 381
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Measurement of composition and thickness of thin semiconductor layers by EPMAZeimer, U. / Bugge, F. / Gramlich, S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 385
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Localized thinning of semiconductor nanostructures for cross-sectional transmission electron microscopyVieu, C. / Pepin, A. / Assayag, G. B. / Gierak, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 385
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Quantum wire-like morphology in In~xGa~1~-~xAs single quantum wells: dependence on substrate misorientation and intrinsic strainPeiro, F. / Cornet, A. / Morante, J. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 389
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Convergent beam electron diffraction study of CdZnSe/ZnSe strained-layer superlatticesManno, D. / Cingolani, R. / Sorba, L. / Vanzetti, L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 391
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Recent advances in ion milling techniques and instrumentation for TEM specimen preparation of materialsAlani, R. / Swann, P. R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 393
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X-ray characterisation of quantum well device structuresHart, L. / Roberts, C. / Ghisoni, M. / Roberts, J. M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 395
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Surfactant effect of Bi and Sb on Si/Ge/Si(001) heteroepitaxyMatsuhata, H. / Sakamoto, K. / Kyoya, K. / Miki, K. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 399
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The structure of Si~1~-~xGe~x/Si heterostructure waveguidesYang, Z. / Shao, G. / Weiss, B. L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 399
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Characterization of bulk as-grown and annealed III-Vs by photo-etching and complementary methodsWeyher, J. L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 403
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The epitaxial quality of silicon grown by LPCVD as a function of ex-situ wafer preparationBonar, J. M. / Parker, G. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 407
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Epitaxy of CdTe on exotic (h11) GaAs surfacesPatriarche, G. / Tromson-Carli, A. / Riviere, J.-P. / Maurice, J.-L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 409
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TEM study of GaAs/InP heterostructures fabricated by wafer bondingPatriarche, G. / Jeannes, F. / Glas, F. / Oudar, J. L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 411
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The characterization of CdS/CdTe thin films for solar cell applicationsAl-Jassim, M. M. / Hasoon, F. S. / Jones, K. M. / Keyes, B. M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 413
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Zinc diffusion into gallium arsenide: influence of diffusion source composition and temperatureRucki, A. / Jaeger, W. / Urban, K. / Hettwer, H.-G. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 417
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Zn diffusion and defect generation in undoped and Fe-doped InPWittorf, D. / Rucki, A. / Jaeger, W. / Urban, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 417
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Anomalous "anomalous weak beam contrast" of stacking faults in ZnSe on (100) GaAsChen, C. Y. / Stobbs, W. M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 421
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XTEM observations of MOVPE grown (Hg~xMn~1~-~x)Te epilayersTatsuoka, H. / Durose, K. / Funaki, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 423
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Zn~3P~2 precipitates in dislocation-free LEC/InP heavily doped with ZnFrigeri, C. / Fornari, R. / Weyher, J. L. / Guadalupi, G. M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 425
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Structural quality of lattice matched GaAs/Sc~0~.~2Yb~0~.~8As/(001) GaAs structuresGuenais, B. / Poudoulec, A. / Guivarc'h, A. / Ballini, Y. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 427
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Enhancement of secondary electron emission induced by defects in Si-implanted GaAsIwase, F. / Matsuda, T. / Maruya, H. / Sekine, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 429
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Microstructural characterization of the heteroepitaxy PbSe/BaF~2/CaF~2 on (111) SiMathet, V. / Padeletti, G. / Olivier, J. / Galtier, P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 431
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Point defect interactions in doped II-VI compounds under ion and electron beam irradiationLoginov, Y. Y. / Brown, P. D. / Humphreys, C. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 433
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Transmission electron microscopy in the study of the growth of Ga~2Se~3 thin films by the heterovalent exchange mechanismWright, A. C. / Williams, J. O. / Von der Emde, M. / Zahn, D. R. T. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 435
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Ion-implantation and annealing of 6H-SiCHeindl, J. / Strunk, H. P. / Heft, A. / Bachmann, T. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 437
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A study of tin doped indium oxide thin films grown by electron beam evaporationDiniz, A. S. A. C. / Kiely, C. J. / Elfallal, I. / Pilkington, R. D. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 439
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Structure transformation of 6H-SiC during room and high temperature ion implantationSitnikova, A. A. / Suvorova, A. A. / Suvorov, A. V. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 441
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Electron microscope investigations of heterostructures, nanostructures and misfit dislocationsHumphreys, C. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 443
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Investigations of Cd~1~-~xZn~xTe~1~-~ySe~y solid solutions by cathodoluminescence and X-ray standing wave methodsMikheev, N. N. / Sozontov, E. A. / Stepovich, M. A. / Petrov, V. I. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 447
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Ordered double Bi layers in the structure of Ba~mBi~m~+~nO~y seriesNikolaichik, V. I. / Klinkova, L. A. / Khodos, I. I. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 449
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Correlation between the structural and optical properties of AlAs/GaAs quantum well structuresWalther, T. / Gerthsen, D. / Carius, R. / Foerster, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 451
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{311} defects in ion-implanted Si: the cause of transient diffusion, and a mechanism for dislocation formationEaglesham, D. J. / Stolk, P. A. / Cheng, J.-Y. / Gossmann, H.-J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 455
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Dimensional reduction of GaAs/AlGaAs quantum well cut by dislocation slip observed by transmission electron microscopyAtmani, H. / Rocher, A. / Guasch, C. / Peyrade, J. P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 457
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Epitaxial regrowth of As-doped polysilicon at 850C induced by fluorine implantation and a pre-annealMarsh, C. D. / Moiseiwitsch, N. E. / Booker, G. R. / Ashburn, P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 459
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Intermixing mechanisms in single GaAs/GaAlAs quantum well samples under SiO~2 cappingPepin, A. / Vieu, C. / Schneider, M. / Assayag, G. B. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 461
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Structural and optical characterisation of Er-implanted siliconHuda, M. Q. / Taskin, T. / Evans, J. H. / Peaker, A. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 463
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A low temperature EBIC study of quantum wires fabricated in GaAs/AlGaAs heterostructures using ion-implanted gatesBlaikie, R. J. / Fraboni, B. / Cleaver, J. R. A. / Ahmed, H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 465
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High resolution transmission electron microscopy investigation of ion implanted silicon after irradiation with ultrashort laser pulsesKoch, A. / Seibt, M. / Boehne, G. / Schroeter, W. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 467
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Indentation plasticity of single and multiple layer GaAs-AlAs heterostructuresCastell, M. R. / Howie, A. / Perovic, D. D. / Ritchie, D. A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 469
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Surface roughness of Si~xGe~1~-~x layers obtained by high dose Ge implants in Si after oxidation treatmentsRaineri, V. / Larsen, K. K. / La Via, F. / Lombardo, S. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 471
-
High resolution TEM and XRD study of interface composition inhomogeneities in CBE and MOCVD grown in (GaAs)P/InP multiple quantum wellsSalviati, G. / Ferrari, C. / Lazzarini, L. / Genova, F. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 473
-
Structural defects in ion beam synthesised semiconducting FeSi~2Yang, Z. / Shao, G. / Homewood, K. P. / Finney, M. S. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 477
-
Modification of layer interdiffusion in GaInAs/GaInAsP multiple quantum wells through the controlled introduction of dislocationsMallard, R. E. / Thrush, E. J. / Galloway, S. A. / Allen, E. M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 477
-
TEM characterization of -SiC synthesized by high dose carbon ion implantation into siliconRomano-Rodriguez, A. / Perez-Rodriguez, A. / Serre, C. / Calvo-Barrio, L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 481
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Microstructural characterization of heterointerfaces in the MOCVD-grown InGaAs/GaAs strained layer system using cross section transmission electron microscopyPaek, M. C. / Park, H. H. / Kwon, O. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 481
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Formation of cavities in Si and their chemisorption of metalsFollstaedt, D. M. / Myers, S. M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 485
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Effect of D-defects and oxygen precipitates on oxide integrityPark, J.-G. / Romanowski, A. / Cho, K.-C. / Lee, C.-S. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 485
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TEM observation of modulations in strained GaInAsP multilayers grown by gas source molecular beam epitaxyPonchet, A. / Rocher, A. / Emery, J. Y. / Starck, C. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 489
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TEM studies of strain relaxation in Ga~xIn~1~-~xAs strained-layer multiple quantum well structures grown by MOCVD with InP and quaternary barriersZhou, X. / Charsley, P. / Bangert, U. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 491
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High performance oxide on SiGe and the interfaceChan, S.-W. / Zhao, L. / Chen, C. / Li, P. W. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 493
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The effect of the imaging electron beam on InP/InGaAs MQW structuresBrown, P. D. / Bithell, E. G. / Humphreys, C. J. / Skevington, P. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 495
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TEM and HREM study of microstructure of FZ-silicon crystal grown at high varying rateSorokin, L. M. / Hutchison, J. L. / Scheerschmidt, K. / Mosina, G. N. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 497
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High resolution STEM Z-contrast imaging and XRD: two new approaches for the characterization of GaInP/GaAs heterostructuresLakner, H. / Bollig, B. / Volmich, P. / Liu, Q. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 499
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Surface plasticity of silicon at low temperatureShreter, Y. G. / Rebane, Y. T. / Tarhin, D. V. / Khorev, S. A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 503
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Direct electron-beam fabrication of nanometer scale silicon columnsChen, G.S. / Boothroyd, C.B. / Humphreys, C.J. et al. | 1993
- 503
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Direct electron-beam fabrication of nanometre scale silicon columnsChen, G. S. / Boothroyd, C. B. / Humphreys, C. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 503
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Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour depositionPolo, M. C. / Peiro, F. / Cifre, J. / Bertomeu, J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 507
-
Growth of microcrystallites in thin silicon films prepared by PECVDLuysberg, M. / Hapke, P. / Finger, F. / Carius, R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 509
-
Strain and defects in Si/Ge superlattices fabricated on a Si substrateMatsuhata, H. / Miki, K. / Sakamoto, K. / Sakamoto, T. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 511
-
Dynamic observation of electrochemical etching in siliconRoss, F. M. / Searson, P. C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 513
-
Profiling of Ge~xSi~1~-~x/Si strained-layer superlattices by large-angle convergent beam electron diffraction and electron holographyDuan, X. F. / Grigorieff, N. / Cherns, D. / Steeds, J. W. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 515
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Microstructure of critical point dried porous siliconWakefield, G. / Hutchison, J. L. / Dobson, P. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 517
-
Defect structures and impurity distribution inhomogeneities in LEC GaAs crystalsFrigeri, C. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 519
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Chemical composition of luminescent porous silicon layersGardelis, S. / Bangert, U. / Hamilton, B. / Pettifer, R. F. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 523
-
Defects and microstructure of CVD diamond as observed with the TEMWurzinger, P. / Joksch, M. / Pongratz, P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 527
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HRTEM study of the {111} planar defectOhno, Y. / Takeda, S. / Horiuchi, S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 529
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Structure characterization of boron doped CVD diamond filmsPeiro, F. / Polo, M. C. / Cifre, J. / Sanchez, G. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 531
-
Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: competition of two thermodynamic driving forcesJaeger, W. / Rucki, A. / Urban, K. / Hettwer, H.-G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 533
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HREM characterization of ion beam synthesized ternary silicides in (111) siliconTavares, J. / Bender, H. / Wu, M. F. / Vantomme, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 535
-
High-resolution electron microscopy of radiation damage in implanted and laser treated GaAsPashov, N. / Kalitzova, M. / Rossi, M. / Vitali, G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 537
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Gadolinium silicide films grown on (111) SiVannuffel, C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 539
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Defects in Zn-diffused InP single crystalsDixon, R. H. / Jaeger, W. / Rucki, A. / Urban, K. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 541
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Structural characterization of thin films with the use of RHEED azimuthal plotsMitura, Z. / Mazurek, P. / Paprocki, K. / Mikolajczak, P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 543
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Basal and prismatic defects in -SiC 6H single crystals irradiated at the GANIL accelerator with 5.5 GeV Xe ionsLhermitte-Sebire, I. / Vicens, J. / Chermant, J. L. / Levalois, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 545
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Metastable silicide formation at grain boundaries in gold/silicon multilayersSeibt, M. / Buschbaum, S. / Gnauert, U. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 547
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Ion implantation effects in single crystal CuInSe~2Mullan, C. A. / Kiely, C. J. / Yakushev, M. V. / Imanieh, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 549
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Epitaxial Al on compound semiconductors: structural and electrical studiesPilkington, S. J. / Missous, M. / Bangert, U. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 551
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Convergent beam electron diffraction analysis of doped indium selenide crystalsManno, D. / Rella, R. / Siciliano, P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 553
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TEM characterization of ion beam mixed Au/GaAs contactsPecz, B. / Radnoczi, G. / Jaroli, E. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 555
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The complementary role of XRD to that of TEM in the characterization of semiconductor hetero-epitaxial structuresHalliwell, M. et al. | 1993
- 555
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The complimentary role of XRD to that of TEM in the characterization of semiconductor hetero-epitaxial structuresHalliwell, M. A. G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 557
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TEM study of annealed behaviour of Au/InP contactsKatcki, J. / Mizera, E. / Piotrowska, A. / Ratajczak, J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 561
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Granular superconducting contacts to buried two-dimensional electron gasesWilliams, D. A. / Marsh, A. M. / Moore, T. D. / Stobbs, W. M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 563
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In situ synchrotron X-ray studies of epitaxial strained-layer growth processesWhitehouse, C. R. / Usher, B. F. / Barnett, S. J. / Cullis, A. G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 565
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Electron microscopy applications to semiconductor devicesCunningham, B. / Joseph, T. W. / Gignac, L. / Domenicucci, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 569
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Characterization of InAs on GaAs in the (110) orientation by X-ray diffraction and topographyHart, L. / Fewster, P. F. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 573
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X-ray topographic study of the formation of misfit dislocations at the GaAs/Ge(001) interfaceBurle, N. / Pichaud, B. / Guelton, N. / St-Jacques, R. G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 575
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Sub-nanometric elemental analysis on ULSI devices with FEG-TEMPark, K.-H. / Hashimoto, S. / Kawasaki, M. / Ibe, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 577
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Dislocation structure of heavily strained, MBE-grown GaSb on GaAs and LPE-grown CdHgTe and ZnHgTe on CdTe(ZnSe) revealed by TEM, XRD and XRTKyutt, R. N. / Ruvimov, S. S. / Argunova, T. S. / Kop'ev, P. S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 579
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Electron diffraction contrast imaging as a tool for nano-range strain analysis and application to a semiconductor laser structureJanssens, K. G. F. / Vanhellemont, J. / Maes, H. E. / Van der Biest, O. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 581
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Thickness dependence of the density of threading dislocations in mismatched (001) oriented epilayersDurose, K. / Tatsuoka, H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 583
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Combined focused ion beam/electron microscopy investigation of laser diodesDietzel, A. / Jakubowicz, A. / Broom, R. F. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 585
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Critical thickness phenomena: the distinction between the existence of interfacial dislocations and significant lattice relaxationKidd, P. / Fewster, P. F. / Andrew, N. L. / Dunstan, D. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 587
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Heating and damage of InGaAs/GaAs/AlGaAs laser facetsRechenberg, I. / Hoepner, A. / Maege, J. / Klein, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 589
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Determination of the state of deformation in epitaxial layers using X-ray diffractionDugdale, P. J. / Barnett, S. J. / Pond, R. C. / Emery, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 591
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Characterization of integrated GaInAsP laser/modulators grown by selective and non-planar epitaxyMallard, R. E. / Puetz, N. / Miner, C. J. / Zorzi, J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 593
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Description of the real orientation relationships of epitaxial samples using transformation matricesMoeck, P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 595
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Electron holography of p-n junctionsFrost, B. G. / Joy, D. C. / Allard, L. F. / Voelkl, E. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 597
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Work function at a silicon surface atomically resolved by STMPethica, J. B. / Knall, J. / Wilson, J. H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 599
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Quantitative SEM-DVC imaging of semiconductor devicesMil'shtein, S. / Kharas, D. / Lee, C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 605
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Adsorption of trimethylgallium on semiconductor surfaces: STM observationsMayne, A. J. / Schweitzer, M. O. / Avery, A. R. / Jones, T. S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 605
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Application of secondary electron imaging to dopant profiling of semiconductorsVenables, D. / Maher, D. M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 609
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Elastic relaxation by surface rippling of strained Si~1~-~xGe~x/Si heteroepitaxial layersPidduck, A. J. / Robbins, D. J. / Cullis, A. G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 609
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SEM imaging of contrast arising from different doping concentrations in semiconductorsSealy, C. P. / Castell, M. R. / Wilkinson, A. J. / Wilshaw, P. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 613
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Observation of strong transmission electron microscope contrast from doped layers in InP-based structuresHull, R. / Moore, M. / Bahnck, D. / Geva, M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 613
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Characterization of initial stages of growth of CaF~2 on Si(111) substrates by atomic force microscopyOlivier, J. / Padeletti, G. / Mathet, V. / Nguyen-Van-Dau, F. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 617
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Microstructural investigation of Si~1~-~xGe~x/Si(001) MODFET structures grown by gas-source MBELee, W. J. / Staton-Bevan, A. E. / Russell, J. D. / Fernandez, J. M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 617
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Top-view construction analysis of 16 Mbit DRAM by atomic force microscopy: a new approachDruet, E. / Albarede, P.-H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 621
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Quantitative analysis of compound semiconductor solar cells by Electron Beam Induced CurrentHardingham, C. / Holt, D. B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 623
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Scanning tunnelling microscopy in air on as-grown, massive silicon carbide crystalsHeuell, P. / Kulakov, M. A. / Tsvetkov, V. F. / Bullemer, B. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 625
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Transmission electron microscopy of CVD copper for metallisation in microelectronicsWeaver, L. / Siemsen, R. / Sayer, M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 629
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Focused ion beam sample preparation for TEMWalker, J. F. / Reiner, J. C. / Solenthaler, C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 629
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Cathodoluminescence images of quantum wells and wiresBimberg, D. / Christen, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 635
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Investigation of high electric fields in semiconductors by Franz-Keldysh effect microscopyBerwick, K. / Brozel, M. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 639
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Cathodoluminescence studies of quantum-well wires grown on patterned substratesGustafsson, A. / Samuelson, L. / Malm, J.-O. / Vermeire, G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 641
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An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devicesVan Meirhaeghe, R. L. / Goubert, L. / Fiermans, L. / Laflere, W. H. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 643
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Measurements of the diffusion length in GaAs/AlGaAs quantum well (QW) structures by cathodoluminescence: comparison of the bulk and QW diffusion channelsAraujo, D. / Oelgart, G. / Bonard, J.-M. / Ganiere, J.-D. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 645
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Growth mode transitions on GaAs (110) surfaceHolmes, D. M. / Sudijono, J. L. / Belk, J. G. / Neave, J. H. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 647
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Inhomogeneities in multiple quantum wells investigated by SEM-cathodoluminescenceJahn, U. / Menniger, J. / Hey, R. / Frigeri, G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 649
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The epitaxial growth of compound semiconductors observed by atomic force microscopyWilson, I. H. / Xu, J. B. / Hsu, C. C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 651
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Cathodoluminescence of strained and relaxed GaAs/AlGaAs p-i-n multiquantum well structures on patterned Si substratesNorman, C. E. / Murray, R. / Woodbridge, K. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 655
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Depth-resolved cathodoluminescence study of GaInP/InP heterojunctions grown by MOCVDCleton, F. / Sieber, B. / Bensaada, A. / Isnard, L. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 655
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Nanoscopic detection of the thermal conductivity of compound semiconductor materials by enhanced scanning thermal microscopyBalk, L. J. / Maywald, M. / Pylkki, R. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 659
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Nano-field-effect-microscopy of electrical inhomogeneities on InGaAs surfacesKoschinski, P. M. / Fiege, G. B. M. / Balk, L. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 661
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Beam-induced dislocations and their CL contrastHolt, D. B. / Napchan, E. / Lazzarini, L. / Salviati, G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 663
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Resolution and sensitivity of the lateral and vertical localization of buried layers in gallium arsenide by contact current measurementsMaywald, M. / Wittpahl, V. / Balk, L. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 667
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Transmission electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations of Si diffusion in GaAsHerzog, L. / Norman, C. E. / Egger, U. / Breitenstein, O. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 667
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Scanning probe acoustic microscopyMaywald, M. / Brockt, G. / Balk, L. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 671
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Cathodoluminescence studies of ZnSe grown on (001) GaAs using laser-assisted MBEWilliams, G. M. / Cullis, A. G. / Prior, K. / Simpson, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 671
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Scanning tunnelling microscopy at atomic resolution - quantitative information from corrugation heightsClarke, A. R. H. / Pethica, J. B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 675
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SEM characterization of multilayersAristov, V. V. / Rau, E. I. / Yakimov, E. B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 675
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Investigations of high quality Ge~xSi~1~-~x grown by heteroepitaxial lateral overgrowth using cathodoluminescenceGustafsson, A. / Hansson, P. O. / Albrecht, M. / Strunk, H. P. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 679
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CL imaging of Si/Si~1~-~xGe~x/Si quantum wells grown by RTCVDHiggs, V. / Lightowlers, E. C. / Sturm, J. C. / Xiao, X. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 681
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Applications of scanning infra-red microscopy to bulk semiconductorsBooker, G. R. / Laczik, Z. / Toeroek, P. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 683
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3-dimensional mapping of ZnTe by cathodoluminescence spectroscopyTrager-Cowan, C. / Burley, A. / O'Donnell, K. P. / Naumov, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 687
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A numerical method for simulating cathodoluminescence contrast from localised defectsPey, K. L. / Chan, D. S. H. / Phang, J. C. H. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 693
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A calibrated spectroscopic cathodoluminescence system for SEMNapchan, E. / O'Neill, D. J. C. / Zanotti-Fregonara, C. L. M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 693
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EBIC and DLTS investigations of charged dislocations in SiKononchuk, O. V. / Yakimov, E. B. / Yarykin, N. A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 697
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Application of Monte Carlo simulation to EBIC-contrast modellingMohr, H. / Dunstan, D. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 699
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SEM-CL/EBIC studies of dislocations in semiconductorsSchreiber, J. / Hildebrandt, S. / Leipner, H. S. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 701
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STEBIC of Si/Si~1~-~xGe~x/Si and high voltage REBIC of CdTeBrown, P. D. / Humphreys, C. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 703
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Investigation of recombination at misfit dislocations in SiGe CVD structures by 1:1 correlation of EBIC and CLHiggs, V. / Kittler, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 705
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p-n junction localization in semiconductor laser structuresToth, A. L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 707
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EBIC and AFM studies of reactive ion and reactive ion beam etched silicon for damage depth researchJaeger-Waldau, G. / Habermeier, H.-U. / Zwicker, G. / Bucher, E. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 709
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SEM/EBIC observations of CdTe/CdS thin film solar cellsGalloway, S. A. / Durose, K. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 713
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Structure and properties of APBs in GaAs/GeHolt, D. B. / Mazzer, M. / Zanotti-Fregonara, C. / Hardingham, C. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 713
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Frequency dependence of the EBIC signal from dislocations in Si measured with a lock-in amplifierMohr, H. / Alexander, H. / Palm, J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 717
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On the origin of recombination activity of extended defects in silicon as studied by the method of the electron beam induced currentKittler, M. / Seifert, W. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 719
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Cathodoluminescence imaging and spectroscopy of individual impurity atoms in quantum well structuresGustafsson, A. / Samuelson, L. / Petersson, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 721
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Temperature dependence of gold induced conductivity inversionRadzimski, Z. J. / Buczkowski, A. / Rozgonyi, G. A. / Sekiguchi, T. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 723
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The influence of hydrogen, oxygen and transition metal contamination on the optical and electrical activity of dislocations in bulk Si and SiGeHiggs, V. / Kittler, M. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 725
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Electron-beam-induced gate currents in GaAs MESFETKaufmann, K. / Balk, L. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 729
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Cathodoluminescence and TEM investigations of stress relaxation mechanisms in Ga~xIn~1~-~xP/InP heterostructuresCleton, F. / Sieber, B. / Lefebvre, A. / Bensaada, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 731
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EBIC in HEMT structures on SI substratesHolt, D. B. / Napchan, E. / Wojcik, A. / Ammou, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 733
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Interface roughness of quantum wells - a scanning electron microscopy and cathodoluminescence studyJahn, U. / Menniger, J. / Hey, R. / Kwok, S. H. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 735
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EBIC from -doped quantum wiresO'Neill, D. J. C. / Feng, Y. / Thornton, T. J. / Harris, J. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 737
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Cathodoluminescence of InGaAs on patterned GaAs substratesNorman, C. E. / Pratt, A. R. / Williams, R. L. / Fahy, M. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 739
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Twins in Si InPHolt, D. B. / Salviati, G. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 741
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Cathodoluminescence study of misfit dislocations in InGaAs/GaAs multi-quantum-wellsMazzer, M. / Ghiraldo, F. / Zanotti-Fregonara, C. / Holt, D. B. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 743
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SEM-EBIC study of lattice defects in CdTe and CdHgTe subjected to electron and ion bombardmentPanin, G. N. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 745
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Band-to-band recombination in N^+ InP substrate. Evidence for photon recyclingCleton, F. / Sieber, B. / Isnart, L. / Masut, R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 747
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Diffusion length and surface recombination velocity: injection dose dependenceCavalcoli, D. / Cavallini, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 751
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Cathodoluminescence studies of MOCVD grown, e-beam pumped, II-VI laser structuresWilliams, G. M. / Cullis, A. G. / Cockayne, B. / Wright, P. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 751
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Simulation of EBIC contrast with account of a realistic generation function and nonzero width of collecting Schottky junctionSeifert, W. / Knechtel, W. / Kittler, M. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 755
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Cathodoluminescence and transmission electron microscopy investigation of ZnCdSe/ZnSe electron-beam-pumped laser structuresBonard, J.-M. / Ganiere, J.-D. / Vanzetti, L. / Sorba, L. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 755
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Electron channelling contrast imaging of defects in semiconductorsWilkinson, A. J. / Hirsch, P. B. / Czernuszka, J. T. / Long, N. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 759
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Characterization of semiconductor materials using a cryogenic Fourier transform SEM-CL systemHiggs, V. / Lightowlers, E. C. / Collins, A. T. / Mainwood, A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 763
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Novel dislocation contrast effects in scanning-transmission electron microscopyPerovic, D. D. / Howie, A. / Rossouw, C. J. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 763
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Multiple scattering simulation of electron channelling contrast images of dislocations at interfacesDudarev, S. L. / Czernuszka, J. T. / Peng, L.-M. / Wilkinson, A. J. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 767
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Optimization of the imaging conditions for electron- and laser-beam excited scanning DLTS investigationsBreitenstein, O. / Heiser, T. / Heydenreich, J. / Mesli, A. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 767
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The effect of spherical aberration and surface reflection on the scanning infra-red microscope imaging of oxide particles in SiLaczik, Z. / Toeroek, P. / Booker, G. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 771
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Imaging of oxide particles in Czochralski silicon wafers using high-performance reflection confocal scanning infra-red microscopy and transmission electron microscopyToeroek, P. / Pecz, B. / Laczik, Z. / Booker, G. R. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995
- 771
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A new confocal SIRM incorporating reflection, transmission and double-pass modes either with or without differential phase contrast imagingToeroek, P. / Booker, G. R. / Laczik, Z. / Falster, R. / Royal Microscopical Society / Institute of Physics; Electron Microscopy and Analysis Group / Materials Research Society et al. | 1993
- 775
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Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductorsAstafiev, O. V. / Kalinushkin, V. P. / Yuryev, V. A. / Royal Microscopical Society| Institute of Physics / Electron Microscopy and Analysis Group| Materials Research Society et al. | 1995