Melden Sie sich zuerst an, um alle Funktionen optimal nutzen zu können!
Phase relations and microstructure in bulk materials and thin films of the ternary system Cu-In-Se (Englisch)
- Neue Suche nach: Haalboom, T.
- Neue Suche nach: Goedecke, T.
- Neue Suche nach: Ernst, F.
- Neue Suche nach: Ruehle, M.
- Neue Suche nach: Haalboom, T.
- Neue Suche nach: Goedecke, T.
- Neue Suche nach: Ernst, F.
- Neue Suche nach: Ruehle, M.
- Neue Suche nach: Tomlinson, R. D.
- Neue Suche nach: Hill, A. E.
- Neue Suche nach: Pilkington, R. D.
In:
Ternary and multinary compounds
;
249-252
;
1998
-
ISBN:
- Aufsatz (Konferenz) / Print
-
Titel:Phase relations and microstructure in bulk materials and thin films of the ternary system Cu-In-Se
-
Beteiligte:Haalboom, T. ( Autor:in ) / Goedecke, T. ( Autor:in ) / Ernst, F. ( Autor:in ) / Ruehle, M. ( Autor:in ) / Tomlinson, R. D. / Hill, A. E. / Pilkington, R. D.
-
Kongress:International conference; 11th, Ternary and multinary compounds ; 1997 ; Salford
-
Erschienen in:Ternary and multinary compounds ; 249-252CONFERENCE SERIES- INSTITUTE OF PHYSICS ; 152 ; 249-252
-
Verlag:
- Neue Suche nach: Institute of Physics Publishing
-
Erscheinungsort:Philadelphia, Pa.
-
Erscheinungsdatum:01.01.1998
-
Format / Umfang:4 pages
-
Anmerkungen:Also known as ICTMC-11
-
ISBN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Nonstoichiometry in the I-III-VI~2 compoundsRogacheva, E. I. et al. | 1998
- 15
-
Growth of Cu-(Ga, In)-S system using temperature difference method under controlled S vapor pressureKato, T. / Kiuchi, T. / Matsumoto, T. / Nabetani, Y. et al. | 1998
- 19
-
Bulk crystals in the system Cu-In-Ga-Se with initial Ga/(Ga + In) = 0.1 to 0.3. Growth from the melt and characterizationBeilharz, C. / Benz, K. W. / Dirnstorfer, I. / Meyer, B. K. et al. | 1998
- 23
-
The influence of Cu substitution by Zn on the properties of CuInSe~2-the system ZnIn~2Se~4-CuInSe~2Krauss, G. / Kraemer, V. / Eifler, A. / Wenger, S. et al. | 1998
- 27
-
Phase behaviour and homogeneity ranges of chalcopyrite-type compound semiconductorsFiechter, S. / Diesner, K. / Tomm, Y. et al. | 1998
- 31
-
Crystallographic structure and phase analysis of CuInSe~2 by microdiffractionLeicht, M. / Stenkamp, D. / Strunk, H. P. / Hornung, M. et al. | 1998
- 37
-
A codoping method in CuInS~2 proposed by ab initio electronic structure calculationsYamamoto, T. / Katayama-Yoshida, H. et al. | 1998
- 41
-
Growth and characterization of the Se-rich TlBi(Se~xSi~1~-~x)~2 narrow gap semiconductorsOezer, M. / Anagnostopoulos, A. N. / Paraskevopoulos, K. M. / Polychroniadis, E. K. et al. | 1998
- 45
-
Crystal chemistry of diamond-like and other derivative semiconducting compoundsDelgado, J. M. et al. | 1998
- 51
-
Temperature dependence of the optical properties of CuInTe~2 single crystalsMarin, G. / Wasim, S. M. / Rincon, C. / Sanchez Perez, G. et al. | 1998
- 55
-
Electrical and optical properties of bulk CuIn~3Se~5Wasim, S. M. / Marin, G. / Rincon, C. / Bocaranda, P. et al. | 1998
- 59
-
Electrical and optical characterization of CuGaSe~2 single crystalsSchoen, J. H. / Fess, K. / Friemelt, K. / Kloc, C. et al. | 1998
- 63
-
X-ray diffraction study of CuAlS~2 and CuAlSe~2 at high pressuresRoa, L. / Chervin, J. C. / Itie, J. P. / Polian, A. et al. | 1998
- 67
-
Single crystal synchrotron x-ray diffraction of CuInSe~2Frolow, F. / Chernyak, L. / Cahen, D. / Hallak, H. et al. | 1998
- 71
-
Single crystal growth of CuAlSe~2 by travelling heater methodYamamoto, N. / Kikuno, Y. / Yamaguchi, M. / Wakita, K. et al. | 1998
- 75
-
Dependence of conduction type of solid state grown Cu-In-Se compounds on composition around CuIn~3Se~5Ashida, A. / Shigeno, Y. / Segawa, M. / Yamamoto, N. et al. | 1998
- 79
-
Growth of bulk CuGaTe~2 single crystals by THM using In solventMiyake, H. / Murata, T. / Sugiyama, K. et al. | 1998
- 83
-
Solution growth and optical properties of CuIn(S~xSe~1~-~x)~2 alloysMiyake, H. / Tsuda, M. / Sugiyama, K. et al. | 1998
- 87
-
Cu~3In~5S~9 single crystals: growth and investigation of their photoelectrical propertiesAbasova, A. Z. / Gasanova, L. G. / Kyazym-Zade, A. G. et al. | 1998
- 91
-
Structural and optical properties of Mg~xCd~1~-~xSe mixed single crystalsKim, C.-D. / Shin, D.-H. / Jeong, H.-M. / Choe, S.-H. et al. | 1998
- 95
-
Pressure dependence of the energy gaps in AgGaSe~2 and AgGaS~2Gonzalez, J. / Power, C. / Calderon, E. et al. | 1998
- 99
-
Pressure dependence of impurity levels in CuGa(S~xSe~1~-~x)~2 alloysGonzalez, J. / Calderon, E. / Capet, F. / Baert, F. et al. | 1998
- 103
-
Growth and characterization of twin-free CuInSe~2 crystals by the traveling heater methodLyakhovitskaya, V. / Richter, S. / Manassen, Y. / Cahen, D. et al. | 1998
- 107
-
Synthesis and characterization of Ag~2SnSe~3 and Ag~2SnTe~3De Chalbaud, L. M. / Fernandez, B. J. / Davila, R. / Bracho, D. B. et al. | 1998
- 111
-
Growth of twin free AgGaS~2 single crystals using a modified gradient freezing techniqueWeise, S. / Salk, M. / Kraemer, V. et al. | 1998
- 115
-
Electron spin resonance of donor electrons in CdIn~2S~4 single crystalsKomatsu, C. / Takizawa, T. / Matsushita, H. / Goltzene, A. et al. | 1998
- 119
-
(CuInSe~2)~x (2ZnSe)~1~-~x solid solutionsBodnar, I. V. / Victorov, I. A. / Chibusova, L. V. et al. | 1998
- 123
-
Growth and characterization of CuIn~xAl~1~-~xSe~2Durante Rincon, C. A. / Mora, M. T. / Leon, M. et al. | 1998
- 127
-
Characterization of ZnGeP~2 single crystals grown by low temperature crystallizationYu Rud, V. / Rud, Y. V. / Ohmer, M. C. / Schunemann, P. G. et al. | 1998
- 131
-
Solution growth of CuInSe~2 and CuInS~2 bulk crystals and their characterizationEisener, B. / Druesslein, G. / Wolf, D. / Mueller, G. et al. | 1998
- 135
-
c/a values and geometrical features in AB~2X~4 tetrahedral tetragonal structuresCannas, V. / Cannas, M. et al. | 1998
- 139
-
A re-examination of the crystal structure of CuFeSe~2Delgado, J. M. / Diaz de Delgado, G. / Guevara, R. et al. | 1998
- 143
-
Characterization of CuInTe~2 grown by the tellurization of Cu and In in the liquid phaseMarin, G. / Wasim, S. M. / Sanchez Perez, G. / Bocaranda, P. et al. | 1998
- 147
-
Structural and physical-chemical properties of the ternary compounds CuIn~S~8 and AgIn~5S~8Orlova, N. S. / Bodnar, I. V. / Kudritskaya, E. A. et al. | 1998
- 151
-
X-ray powder diffraction data and structural characterization of Cu~2GeS~3 and Cu~2SnS~3De Chalbaud, L. M. / Delgado, J. M. / Sagredo, V. et al. | 1998
- 155
-
Influence of deviation from stoichiometry on the properties of CuInSe~2Rogacheva, E. I. / Tavrina, T. V. et al. | 1998
- 159
-
Deviation from stoichiometry and properties of CuGaTe~2Rogacheva, E. I. / Nashchekina, O. N. et al. | 1998
- 163
-
Study of vapour phase over A^2B^4C^5~2-compoundsVoevodin, V. G. / Voevodina, O. V. / Bereznaja, S. A. / Korotchenko, Z. V. et al. | 1998
- 167
-
Phase formation in the system Pt-Sn-(S, Se)~2 and crystal growth by chemical vapor transportTomm, Y. / Fiechter, S. / Diesner, K. / Tributsch, H. et al. | 1998
- 171
-
Ion beam analysis used to study the structure of I-III-VI~2 compoundsYakushev, M. / Hill, A. E. / Pilkington, R. D. / Tomlinson, R. D. et al. | 1998
- 175
-
Structural and optical properties of the quaternary alloys CuInSe~2~(~1~-~x~)S~2~xLopez-Rivera, S. A. / Fontal, B. / Henao, J. A. / Mora, E. et al. | 1998
- 181
-
Homogeneity range and crystal growth of CuGaSe~2Tomm, Y. / Fiechter, S. / Fischer, C. et al. | 1998
- 185
-
Growth and thermoelectric properties of the intermetallic compounds MNiSn (M = Ti, Zr, Hf)Kaefer, W. / Fess, K. / Kloc, C. / Friemelt, K. et al. | 1998
- 189
-
Preparation and physical properties of the Ag~xCu~1~-~xInS~2 solid solutionsKorzoun, B. V. / Bodnar, I. V. / Yasyukevich, L. V. et al. | 1998
- 193
-
Plasma-activated sintering of CdSiAs~2Noda, Y. / Kang, Y.-S. / Niino, M. et al. | 1998
- 197
-
Effect of crystal symmetry on electronic structures of CuInSe~2 and CuIn~3Se~5Suzuki, M. / Uenoyama, T. / Wada, T. / Hanada, T. et al. | 1998
- 201
-
Cu insertion and diffusion in CuInSe~2: solid state electrochemical investigationsJean, M. / Peulon, S. / Guillemoles, J.-F. / Vedel, J. et al. | 1998
- 205
-
Pulsed laser deposition of multinary compound filmsTyunina, M. / Levoska, J. / Leppaevuori, S. et al. | 1998
- 209
-
Epitaxial ferroelectric thin films of Bi-layered perovskites on silicon-based epitaxial oxide heterostructures by large area pulsed laser depositionPignolet, A. / Curran, C. / Welke, S. / Alexe, M. et al. | 1998
- 217
-
Structural and optical properties of laser-evaporated CuIn(Te, Se)~2 thin filmsGremenok, V. F. / Victorov, I. A. / Beresutski, L. G. / Zaretskaya, E. P. et al. | 1998
- 221
-
High-quality CuInSe~2 epitaxial films-molecular beam epitaxial growth and intrinsic propertiesNiki, S. / Fons, P. J. / Yamada, A. / Suzuki, R. et al. | 1998
- 229
-
Non-chalcopyrite ordering in CuInS~2 epilayers on Si(111)Su, D. S. / Neumann, W. / Hunger, R. / Giersig, M. et al. | 1998
- 233
-
CuIn(Ga)Se~2 solar cells: characterization of the absorber materialDirnstorfer, I. / Wagner, M. T. / Hofmann, D. M. / Lampert, M. D. et al. | 1998
- 237
-
High-quality CuInSe~2 polycrystalline films and epitaxial layers prepared by multi-source physical vapor depositionYamaki, Y. / Shioda, T. / Irie, T. / Nakanishi, H. et al. | 1998
- 241
-
Structural properties of epitaxial CuInS~2 films on Si and CaF~2 substratesMetzner, H. / Hahn, T. / Bremer, J. H. / Seibt, M. et al. | 1998
- 245
-
Formation of high bandgap CuIn(S, Se)~2 alloys from CuInSe~2 thin film by a simple (NH~4)~2S~x immersionCheng, Y. H. / Tseng, B. H. / Loferski, J. J. / Hwang, H. L. et al. | 1998
- 249
-
Phase relations and microstructure in bulk materials and thin films of the ternary system Cu-In-SeHaalboom, T. / Goedecke, T. / Ernst, F. / Ruehle, M. et al. | 1998
- 253
-
Observation of a metastability in the DC and AC electrical transport properties of Cu(In, Ga)Se~2 single crystals, thin films and solar cellsSeifert, O. / Engelhardt, F. / Meyer, T. / Hirsch, M. T. et al. | 1998
- 257
-
Metalorganic vapour phase epitaxy of Cu-III-VI~2 widegap chalcopyrite semiconductorsChichibu, S. / Shirakata, S. / Nakanishi, H. et al. | 1998
- 261
-
An electrochemical route for the preparation of chalcopyrite semiconductorsVedel, J. et al. | 1998
- 269
-
Characterization of high quality CuGaSe~2 heteroepitaxial layers grown by MOVPEBauknecht, A. / Blieske, U. / Kampschulte, T. / Bruns, J. et al. | 1998
- 273
-
Iodide MBE of CuGaSe~2 on GaAs(100) substratesKodama, T. / Nabetani, Y. / Kato, T. / Matsumoto, T. et al. | 1998
- 277
-
Influence of the window layer deposition on the recombination dynamics in CuInSe~2 thin filmsZott, S. / Teichert, B. / Franz, T. / Puech, K. et al. | 1998
- 281
-
Thin film calorimetry as a tool for in situ investigation of reactions in the Cu-In-Se ternary systemWolf, D. / Mueller, G. et al. | 1998
- 285
-
Liquid phase homoepitaxy of CuInS~2Hack, C. / Wolf, D. / Mueller, G. et al. | 1998
- 289
-
Growth of Ag-Sb-S thin films and their optical propertiesLaubis, C. / Henrion, W. / Beier, J. / Lux-Steiner, M. C. et al. | 1998
- 293
-
Physical properties of ternary thin films based on sulfosalt compound semiconductorsDittrich, H. / Herz, K. et al. | 1998
- 297
-
Metalorganic vapor phase epitaxy and characterization of very high-purity CuInSe~2 layersMizutani, T. / Nakanishi, H. / Chichibu, S. et al. | 1998
- 301
-
Preparation of Cu(In~1~-~xGa~x)Se~2 thin films by chemical spray pyrolysisIsomura, S. / Shirakata, S. / Kannaka, Y. / Hasegawa, H. et al. | 1998
- 305
-
A photoluminescence study of MBE-grown CuInSe~2 film with a near-stoichiometric compositionYang, D.-J. / Tseng, B.-H. et al. | 1998
- 309
-
Growth and characterization of Cu~2In~4Se~7 epitaxial filmsHwang, Y.-R. / Tseng, B.-H. et al. | 1998
- 313
-
CuInS~2 by reactive annealing of Cu-In precursors in H~2S-containing atmosphereGossla, M. / Metzner, H. / Mahnke, H.-E. et al. | 1998
- 317
-
Spray pyrolysis of CuGa~xIn~1~-~xSe~2 thin films-electrical and optical propertiesRamakrishna Reddy, K. T. / Chalapathy, R. B. V. et al. | 1998
- 321
-
Growth and characterization of CuIn~xGa~1~-~xS~2 and CuInS~ySe~2~-~y thin films by reactive sputteringPei, Z. W. / Yu, J. S. / Tseng, B. H. / Hwang, H. L. et al. | 1998
- 325
-
Formation of CuInS~2 thin films by chemical spray pyrolysisKrunks, M. / Bijakina, O. / Mellikov, E. / Varema, T. et al. | 1998
- 329
-
Influence of incorporation of Na on CuInSe~2 thin filmsTanaka, T. / Yamaguchi, T. / Yoshida, A. et al. | 1998
- 333
-
Changes to the electrical and structural properties of polycrystalline thin-film Cu(In, Ga)Se~2 materials by the use of thin MF (M = Na, K, Cs) precursor layersContreras, M. A. / Egaas, B. / Dippo, P. / Webb, J. et al. | 1998
- 337
-
Vapor phase epitaxy of CuGaS~2 using CuCl, diethylgalliumchloride and H~2S sources under simultaneous and alternate feeding conditionsMitomo, J. / Sato, H. / Terasako, T. / Matsumoto, T. et al. | 1998
- 341
-
Features of the growth of epitaxial layers of solid solutions of InAsSbP lattice-matched on InAs substrateMursakulov, N. N. et al. | 1998
- 345
-
Growth and characterization of Cu~2ZnSnS~4 and Cu~2ZnSnSe~4 thin films for photovoltaic applicationsFriedlmeier, T. M. / Dittrich, H. / Schock, H.-W. et al. | 1998
- 349
-
Annealing in Se vapor: effect on crystallinity of CuInSe~2 thin films prepared by pulsed laser ablation methodAndo, S. / Saino, Y. / Endo, S. / Tsukamoto, T. et al. | 1998
- 353
-
Characterization of CuInSe~2 thin films prepared by a metal-organic decomposition method using metal naphthenatesAndo, S. / Asahi, Y. / Okamura, S. / Tsukamoto, T. et al. | 1998
- 357
-
Characterization of Cu(In, Ga)Se~2 thin films prepared by thermal crystallization of evaporated amorphous-like precursor with Ga/(In + Ga) = 0.6Yamaguchi, T. / Yamamoto, Y. / Yoshida, A. et al. | 1998
- 361
-
Characterization of Cu(In, Ga)Se~2 laser-deposited thin films: structural and photosensitive propertiesZaretskaya, E. P. / Gremenok, V. F. / Victorov, I. A. / Bodnar, I. V. et al. | 1998
- 365
-
Studies of CuInSe~2 thin films grown by multistep MOCVD from In(Se) binary phaseGallon, P. / Ouchen, F. / Artaud, M. C. / Duchemin, S. et al. | 1998
- 369
-
Measurement of ionic currents conveyed by cluster beams during ICB deposition of CuInSe~2 thin filmsYanase, Y. / Shimizu, T. / Ishibashi, T. / Sano, H. et al. | 1998
- 373
-
P-type doping for CuGaS~2 grown by MOVPEHonda, T. / Hara, K. / Yoshino, J. / Kukimoto, H. et al. | 1998
- 377
-
Epitaxial CuIn~xSe~y layers of improved crystal quality and determination of the crystal orientation with Raman spectroscopyKrejci, M. / Tiwari, A. N. / Zogg, H. / Doebeli, M. et al. | 1998
- 381
-
Low energy implantation of atomic hydrogen into CuInS~2 thin films by an ion broad beam techniqueLippold, G. / Otte, K. / Schindler, A. / Klenk, R. et al. | 1998
- 385
-
Structural and optoelectronic properties of Zn~2~-~2~xCuxIn~xS~2 solid solution thin filmsLuck, I. / Fieber-Erdmann, M. / Teichert, B. / Scheer, R. et al. | 1998
- 389
-
Compositional dependence of manganese emission in Zn~xMg~1~-~xS ternary compound thin filmsInoue, R. / Kitagawa, M. / Nishigaki, T. / Ichino, K. et al. | 1998
- 393
-
What knowledge about lattice oscillators can we obtain from the optical band shape of a recombination centre?Collan, H. et al. | 1998
- 401
-
Emission and absorption lines of free and bound excitons in CuGaS~2 crystalsMatsumoto, T. / Shimojo, T. / Terasako, T. / Tanaka, K. et al. | 1998
- 405
-
Infrared photoluminescence studies of rare earth doped CuAlS~2 single crystalsNishi, T. / Kimura, Y. / Shimuzu, K. / Sato, K. et al. | 1998
- 409
-
Growth and photoluminescence spectra of high quality AgGaS~2 single crystalsNiwa, E. / Masumoto, K. / Yasuda, T. / Isshiki, M. et al. | 1998
- 413
-
Excitonic photoluminescence properties of CuInSe~2 and CuGaSe~2 semiconductor compoundsMudryi, A. V. / Bodnar, I. V. / Victorov, I. A. / Gremenok, V. F. et al. | 1998
- 417
-
Photoluminescence spectroscopy of excitons in hydrogen-implanted CuInSe~2Martin, R. W. / Urquhart, F. A. / Yakushev, M. V. / Faunce, C. A. et al. | 1998
- 421
-
Photoluminescence of Ga~2~-~xEr~xS~3 single crystalsJin, M.-S. / Kim, Y.-G. / Park, B.-S. / Yang, D.-I. et al. | 1998
- 425
-
Visible photoluminescence of anodically etched p-CuInSe~2 single crystalsLebedev, A. A. / Yu Rud, V. / Rud, Y. V. / Iida, S. et al. | 1998
- 429
-
Electrical, photoluminescence and reflected second harmonic generation characterization of Ge- and B-implanted CuGaSe~2 single crystalsSchoen, J. H. / Arushanov, E. / Kulyuk, L. / Micu, A. et al. | 1998
- 433
-
Edge luminescence of p-CuGaSe~2 single crystalsIvanov, V. A. / Victorov, I. A. / Zabelina, I. A. et al. | 1998
- 437
-
Photoluminescence study of radiation damage in CuInSe~2 single crystalsYakushev, M. / Martin, R. W. / Urquhart, F. / Faunce, C. A. et al. | 1998
- 441
-
Photoluminescence of AgInSe~2Hjelt, K. / Krustok, J. / Yakushev, M. / Collan, H. et al. | 1998
- 445
-
Photoluminescence of CuGaSe~2 and CuAlSe~2 MOVPE layers grown on CuGa~0~.~9~6In~0~.~0~4Se~2 substrateShirakata, S. / Chichibu, S. / Miyake, H. / Isomura, S. et al. | 1998
- 449
-
Peculiarities of ultraviolet luminescence in CdAl~2S~4 single crystalsAnedda, A. / Serpi, A. / Tiginyanu, I. M. / Ursaki, V. V. et al. | 1998
- 453
-
Excitation spectra in Cd~1~-~xMn~xTeTakamura, K. / Yamamoto, S. / Watanabe, J. / Nakahara, J. et al. | 1998
- 457
-
Decay profiles of Mn^2^+ photoluminescence in CdMnTeYamamoto, S. / Park, J. D. / Nakahara, J. et al. | 1998
- 461
-
Photoluminescence in CuGaSe~2 thin films grown by molecular beam epitaxyLai, S.-C. / Tseng, B.-H. / Hwang, H.-L. et al. | 1998
- 465
-
Characterization by photoluminescence of CuGa~xIn~1~-~xSe~2 thin films prepared by laser depositionMudryi, A. V. / Bodnar, I. V. / Victorov, I. A. / Gremenok, V. F. et al. | 1998
- 469
-
Free-exciton and defect-related luminescence of AgInSe~2 single crystalsMudryi, A. V. / Bodnar, I. V. / Gremenok, V. F. / Victorov, I. A. et al. | 1998
- 473
-
Excitation spectra of the 2.47 eV emission band on AgGaS~2 single crystalsNiwa, E. / Yasuda, T. / Masumoto, K. / Isshiki, M. et al. | 1998
- 477
-
Photoluminescence of quaternary (CdTe):Mn based semimagnetic semiconductorsBryja, L. / Ciorga, M. / Bohdziewicz, A. / Misiewicz, J. et al. | 1998
- 481
-
Spatial solitons in photorefractive materials: a reviewBoardman, A. D. / Bontemps, P. et al. | 1998
- 491
-
An evaluation of Bridgman-grown ZnGeP~2 for optical parametric oscillator applicationsVere, A. W. / Taylor, L. L. / Smith, P. C. / Flynn, C. et al. | 1998
- 495
-
Real state characterization by resonant enhancement of Raman scattering on CuGaSe~2Wakita, K. / Miyazaki, T. / Takata, S. / Yamamoto, N. et al. | 1998
- 499
-
Structural and optical properties of CuIn~2Se~3~.~5, CuIn~3Se~5 and CuIn~5Se~8Mahanty, S. / Merino, J. M. / Diaz, R. / Rueda, F. et al. | 1998
- 503
-
Magneto-optical properties and exciton dynamics in Cd~1~-~xMn~xSe quantum dots and Cd~1~-~xMn~xTe/ZnTe quantum wellsOka, Y. / Takano, S. / Egawa, K. / Matsui, K. et al. | 1998
- 507
-
Optical properties of indium-rich phases in the Cu-In-Se systemBacewicz, R. / Filipowicz, J. / Wolska, A. et al. | 1998
- 511
-
Dependence of Cu/In ratio on the optical properties of CuInSe~2 epitaxial layers examined by piezoelectric photoacoustic spectroscopyIkari, T. / Yoshino, K. / Shimizu, T. / Fukuyama, A. et al. | 1998
- 515
-
Infrared spectra and effective charge in superionic conductor CsPbCl~3Wakamura, K. / Kojima, A. / Noda, Y. et al. | 1998
- 519
-
Raman spectroscopy of CuAlS~2 and CuAlSe~2 at high pressuresRoa, L. / Chervin, J. C. / Chevy, A. / Grima, P. et al. | 1998
- 523
-
Anisotropy of electrical properties of quasi-two-dimensional systemsAskerov, B. M. / Figarova, S. R. / Gadirova, I. R. et al. | 1998
- 527
-
Anharmonic properties of soft modes in I-III-VI~2 compoundsGonzalez, J. / Hennion, B. / Fouret, R. / Derollez, P. et al. | 1998
- 531
-
Electrical and optical properties of Ag~2SnSe~3 and Ag~2SnTe~3Davila, R. / Fernandez, B. J. et al. | 1998
- 535
-
Electrical and optical properties of CuGaSe~2 single crystals grown by solution method using CuSe solventMatsushita, H. / Jitsukawa, H. / Sugano, H. / Takizawa, T. et al. | 1998
- 539
-
Behavior of the HgBr~xI~2~-~x ternary system in various AC fieldsDaviti, M. / Paraskevopoulos, K. / Anagnostopoulos, A. N. / Polychroniadis, E. K. et al. | 1998
- 543
-
Lattice dynamics of the chalcopyrite CuFeS~2Haeuseler, H. / Ohrendorf, F. W. et al. | 1998
- 549
-
An experimental and theoretical analysis of Cu/Ag chalcopyritesDe Pascale, T. M. / Meloni, F. / Serra, M. / Contineza, A. et al. | 1998
- 553
-
Formation of photosensitivity in CdSe~xTe~1~-~x monograin powdersAltosaar, M. / Krustok, J. / Maedasson, J. / Mellikov, E. et al. | 1998
- 557
-
Dielectric functions and optical parameters of AgGaS~2 and AgGaSe~2Benmessaoud, A. / Pascual, J. / Mestres, N. / Hidalgo, M. et al. | 1998
- 561
-
Lattice dynamics of spontaneously ordered GaInP~2Nakhli, A. / Mestres, N. / Pascual, J. et al. | 1998
- 565
-
Two-dimensional electrical resistivity in metal doped molybdenum oxidesShiozaki, I. / Narushima, K. et al. | 1998
- 569
-
Electrical and optical properties of CuInSe~2 at low temperaturesHernandez, E. / Rincon, C. / Wasim, S. M. / Marin, G. et al. | 1998
- 573
-
Crystal growth, structural characterization and room temperature band gap of CuIn~3Se~5 and CuGa~3Se~5Marin, G. / Tauleigne, S. / Guevara, R. / Delgado, J. M. et al. | 1998
- 579
-
Transport properties in Cu~2SnSe~3 and Cu~2SnTe~3Marcano, G. / Fernandez, B. J. / Bracho, D. B. / Mora, A. E. et al. | 1998
- 583
-
Optical characterization of LiIn~5S~8 single crystalsEifler, A. / Brueckner, J. / Kraemer, V. / Riede, V. et al. | 1998
- 589
-
Infrared and Raman study of ZnIn~2Se~4 single crystalsEifler, A. / Riede, V. / Schmidz, W. / Krauss, G. et al. | 1998
- 593
-
Optical properties in the exciton region of AgGaS~2 layers on GaAs(100) grown by multisource evaporationKurasawa, M. / Tsuboi, N. / Kobayashi, S. / Kaneko, F. et al. | 1998
- 597
-
Electroreflectance of CuInSe~2, CuIn~3Se~5 and Cu~2In~4Se~7Shirakata, S. / Chichibu, S. / Miyake, H. / Isomura, S. et al. | 1998
- 601
-
Raman scattering characterization of -phase ZnAl~2S~4 and CdIn~2S~4Burlakov, I. I. / Ursaki, V. V. / Tiginyanu, I. M. / Radautsan, S. I. et al. | 1998
- 605
-
Raman scattering study of pressure-induced phase transition in ZnAl~2~(~1~-~x~)Ga~2~xS~4Ursaki, V. V. / Burlakov, I. I. / Tiginyanu, I. M. / Raptis, Y. S. et al. | 1998
- 609
-
Piezoelectric photoacoustic spectra of bulk CuIn~3Se~5 crystals grown by the traveling heater methodYoshino, K. / Kawahara, M. / Maruoka, D. / Maeda, K. et al. | 1998
- 613
-
Optical properties in zinc-blende MnTeSb filmsTakamura, K. / Miyanishi, S. / Yamamoto, S. / Akinaga, H. et al. | 1998
- 617
-
Optical properties of CdAl~2Se~4, CdAl~2Se~4:Co^2^+ and CdAl~2Se~4:Er^3^+ single crystalsPark, T.-Y. / Kim, C.-D. / Yoon, C.-S. / Yang, D.-I. et al. | 1998
- 621
-
Optical properties of Cd~4GeS~6 and Cd~4GeS~6:Co^2^+ single crystalsKim, D. T. / Kim, H. G. / Park, H. Y. / Kim, J. E. et al. | 1998
- 625
-
Optical properties of undoped and Co^2^+-doped MgGa~2S~4 single crystalsKim, H.-G. / Lee, W.-S. / Kim, D.-T. / Park, H. Y. et al. | 1998
- 629
-
Critical points in the dielectric function spectra of the TlInSe~2 and TlInTe~2 ternary chain compoundsMamedov, N. / Iida, S. / Javadov, N. / Matsumoto, T. et al. | 1998
- 633
-
Potential material for an IR filter based on Ni^2^+ d-d^* transitions in a Zn~1~-~xNi~xSe systemLuengo, J. / Joshi, N. V. et al. | 1998
- 637
-
Optical properties and magnetic ordering of ternary magnetic semiconductor Zn~1~-~xMn~2~+~xAs~2Nateprov, A. / Siminel, A. / Tomak, I. / Radautsan, S. et al. | 1998
- 641
-
Optical properties of Pb~1~-~x(Ca~1~-~ySr~y)~xS thin films prepared by hot wall epitaxyAbe, S. / Masumoto, K. / Suto, K. et al. | 1998
- 645
-
Photoacoustic spectroscopy of laser-deposited Cu(In, Ga)Se~2 filmsVictorov, I. A. / Gremenok, V. F. / Bodnar, I. V. / Hill, A. E. et al. | 1998
- 649
-
Raman spectra of ordered vacancy compounds in the Cu-In-Se systemNomura, S. / O'Uchi, S.-I. / Endo, S. et al. | 1998
- 653
-
Temperature study of Brillouin scattering in SrLaAlO~4 and SrLaGaO~4 substrate crystalsDrozdowski, M. / Kasprowicz, D. / Ziobrowski, P. / Pajaczkowska, A. et al. | 1998
- 657
-
Above-barrier states investigations in (AlGa)As/GaAs quantum structures by using photoreflectance spectroscopySitarek, P. / Sek, G. / Misiewicz, J. / Cheng, T. S. et al. | 1998
- 661
-
Electrical and optical properties of reactive evaporated indium tin oxide filmsUthanna, S. / Radha Krishna, B. / Ramakrishna Reddy, K. T. / Srinivasulu Naidu, B. et al. | 1998
- 665
-
Dynamical behaviour of charged carrier AgGaSe~2 thin film by photoinduced discharge characteristicsChoi, K. W. / Kim, I. H. / Lee, J. J. / Park, Y. S. et al. | 1998
- 669
-
Photoconductivity of p-CuInSe~2 thin filmsIvanov, V. A. / Victorov, I. A. / Gremenok, V. F. et al. | 1998
- 673
-
Relationship between the interionic distance and the band gap in the normal and superionic phases in Ag~3SIKurita, M. / Akao, F. / Nakagawa, K. / Wakamura, K. et al. | 1998
- 677
-
Optical properties of MnIn~2~-~2~xGa~2~xS~4 single crystalsSagredo, V. / Nieves, L. / Attolini, G. et al. | 1998
- 681
-
Optical properties of CdGa~0~.~9Er~0~.~1InS~4 single crystalChoe, S.-H. / Park, B.-N. / Bang, T.-H. / Oh, S.-J. et al. | 1998
- 685
-
Photoacoustic spectra of nanoscaled CoTiO~3 and NiTiO~3Zhang, S.-Y. / Zhou, L. / Peng, Z.-F. / Zhang, L.-D. et al. | 1998
- 689
-
Photoemission studies of As~1~-~xSb~xSI alloysShchurova, T. / Savchenko, N. / Spesivykh, A. / Panait, T. et al. | 1998
- 693
-
Mechanism of negative nonlinear absorption effects in erbium doped yttrium aluminum garnetsMaeda, Y. / Migitaka, M. et al. | 1998
- 697
-
Micro-scale characterization of chalcopyrite thin film structures by optical and photoelectric spectroscopyLippold, G. / Eifler, A. / Yakushev, M. V. / Tomlinson, R. D. et al. | 1998
- 707
-
Investigations on the mechanism of the oxidation of Cu(In, Ga)Se~2Hariskos, D. / Bilger, G. / Braunger, D. / Ruckh, M. et al. | 1998
- 711
-
Identification of the Cu~2Se surface phase in epitaxial Cu-rich CuInSe~2 grown on GaAs(001)Fons, P. J. / Niki, S. / Yamada, A. / Tweet, D. J. et al. | 1998
- 715
-
Improvement of the interface properties of CuInS~2-based solar cells by admixture of ZnBraunger, D. / Flassak, M. / Hariskos, D. / Herberholz, R. et al. | 1998
- 719
-
Chemical etching of copper indium diselenide surfacesPecharmant, S. / Guillemoles, J.-F. / Vedel, J. / Lincot, D. et al. | 1998
- 723
-
Energy band diagram for the Ge~3~3As~1~2Se~5~5-Si heteroboundarySavchenko, N. D. et al. | 1998
- 727
-
Dopant electromigration and device stability in ternary and multinary semiconductorsCahen, D. et al. | 1998
- 733
-
Defect characterisation in chalcopyrite-based heterostructuresHerberholz, R. et al. | 1998
- 741
-
Investigation of the defect chemistry of CuInSe~2 by positron lifetime and electrical measurementsKlais, J. / Moeller, H. J. / Krause-Rehberg, R. / Cahen, D. et al. | 1998
- 745
-
Point defect study of hemispheric p-n-p microstructures in CuInSe~2 single crystalsMedvedkin, G. A. / Shvets, E. N. / Sobolev, M. M. / Solovjev, S. A. et al. | 1998
- 749
-
Point defects and hole transport in epitaxial CuIn~1~-~xGa~xSe~2Schroeder, D. J. / Hernandez, J. L. / Rockett, A. A. et al. | 1998
- 753
-
Composition-dependent defect structure of heteroepitaxial CuInS~2 films grown by molecular beam epitaxyHunger, R. / Su, D. S. / Krost, A. / Ellmer, K. et al. | 1998
- 757
-
Characterization of intrinsic defects in CuInSe~2 films by monoenergetic positron beamsSuzuki, R. / Ohdaira, T. / Ishibashi, S. / Uedono, A. et al. | 1998
- 761
-
Composition effect on structural and optical properties of CuInSe~2Merino, J. M. / Diaz, R. / Martin, T. / Martin de Vidales, J. L. et al. | 1998
- 765
-
Why is heavily-defected CuInSe~2 a good opto-electronic material: defect physics in CuInSe~2Wei, S.-H. / Zhang, S.-B. / Zunger, A. et al. | 1998
- 773
-
Broad beam low energy hydrogen implantation at elevated temperatures-a method for defect passivation in compound semiconductorsOtte, K. / Lippold, G. / Schindler, A. / Bigl, F. et al. | 1998
- 777
-
The structure of open squareA^I^IB~^I^I^I~2C^V^I~4 studied by PACUnterricker, S. / Dietrich, M. / Degering, D. / Kortus, J. et al. | 1998
- 781
-
Disordering in defect chalcopyrites open squareA^I^IB^I^I^I~2C^V^I~4 studied by PACDietrich, M. / Unterricker, S. / Degering, D. / Deicher, M. et al. | 1998
- 785
-
Time-dependent behaviour of antistructural defects and impurities in CdIn~2S~4 and GaPPyshkin, S. / Anedda, A. et al. | 1998
- 789
-
Deep hole traps in Be-doped Al~0~.~5Ga~0~.~5As MBE layersSzatkowski, J. / Placzek-Popko, E. / Sieranski, K. / Hansen, O. P. et al. | 1998
- 793
-
Deep levels in Cd~0~.~9~9Mn~0~.~0~1Te:GaSzatkowski, J. / Placzek-Popko, E. / Sieranski, K. / Hajdusianek, A. et al. | 1998
- 797
-
Cluster simulation of the electronic structure of point defects in the ternary semiconductor CuInSe~2Sobolev, A. B. / Kuznetsov, A. Y. / Tomlinson, R. D. / Yakusher, M. V. et al. | 1998
- 801
-
An arithmetical view of point defects in chalcopyrite Cu~xGa~ySe~z grown by molecular beam epitaxyYamada, A. / Niki, S. / Fons, P. J. / Tweet, D. J. et al. | 1998
- 805
-
Rare earth intermetallic magnetsFidler, J. et al. | 1998
- 815
-
New diluted magnetic semiconductor Zn~1~-~xMn~xAs~2Laiho, R. / Lisunov, K. G. / Laehderanta, E. / Zakhvalinskii, V. S. et al. | 1998
- 819
-
Pressure effect on spin exchange interaction between excitons and magnetic ions in a CdTe/Cd~1~-~xMn~xTe single quantum well structureYokoi, H. / Kakudate, Y. / Usuba, S. / Katoh, R. et al. | 1998
- 823
-
Galvanomagnetic effects of CuInTe~2 at low temperaturesFernandez, B. J. / Davila, R. / Belandria, E. et al. | 1998
- 827
-
Optical properties and composition of corundum and of synthetic and mineral related materialsCarbonin, S. / Visona, D. / Rizzo, I. / Favaro, M. et al. | 1998
- 831
-
Concentration anomaly of heat capacity in the Pb~1~-~xMn~xTe semimagnetic semiconductorsRogacheva, E. I. / Krivulkin, I. M. et al. | 1998
- 835
-
The photoelectromagnetic effect in CdGeAs~2 ternary compoundVoevodin, V. G. / Vedernikova, T. V. / Voevodina, O. V. et al. | 1998
- 839
-
The luminescence center of the Zn~1~-~xMn~xSe single crystalLopez-Rivera, S. A. / Martinez, L. / Brice�o-Valero, J. M. / Giriat, W. et al. | 1998
- 845
-
Strong effect of magnetic ordering on single crystals La~1~-~xSr~xMnO~3 (x = 0.1; 0.2; 0.3) optical spectraLoshkareva, N. N. / Sukhorukov, Y. P. / Gizhevskii, B. A. / Samokhvalov, A. A. et al. | 1998
- 849
-
Interaction of light with charge carriers in La~0~.~6~7~-~xY~xBa~0~.~3~3MnO~3 (x = 0; 0.07)Loshkareva, N. N. / Sukhorukov, Y. P. / Nossov, A. P. / Vassiliev, V. G. et al. | 1998
- 853
-
Two-dimensional properties in MnGaGe around the Curie temperatureOho, F. / Fujii, N. / Hayashi, K. / Wei, S. et al. | 1998
- 857
-
Magnetic and transport properties of yttrium-doped manganitesNossov, A. P. / Pierre, J. / Vassiliev, V. G. / Ustinov, V. V. et al. | 1998
- 861
-
Magnetic susceptibility and optical properties of MnIn~2Se~4Sagredo, V. / Khan, A. / Villablanca, A. et al. | 1998
- 865
-
Spin-glass behaviour of A-In~2~-~2~xCr~2~xS~4 (A: Fe, Ni) spinel compoundsSagredo, V. / Fiorani, D. / Mantilla, J. / Moreno, E. et al. | 1998
- 869
-
Exchange integrals of quaternary (CdTe):Mn based semimagnetic semiconductorsBryja, L. / Ciorga, M. / Misiewicz, J. / Stachow-Wojcik, A. et al. | 1998
- 873
-
The nuclear magnetic relaxation of Heusler compounds Fe~2VGa and Fe~2VAlOoiwa, K. et al. | 1998
- 877
-
Optical absorption and Faraday rotation in spin doped Cd~1~-~xHg~xSe:Mn crystalsSavchuk, A. I. / Paranchich, S. Y. / Paranchich, L. D. / Romanyuk, O. S. et al. | 1998
- 881
-
Anisotropy of g-factor and magnetic anisotropy energy of antiferromagnetic Li~2CuO~2Tanaka, N. / Hirota, Y. / Nitta, T. / Motizuki, K. et al. | 1998
- 885
-
Resonant photoemission study of rare earth 4f states in A^I^V~1~-~xRE~xB^V^I diluted magnetic semiconductorsKowalski, B. J. / Golacki, Z. / Guziewicz, E. / Orlowski, B. A. et al. | 1998
- 889
-
On the effective-mass anomaly in (Cd~1~-~x~-~yZn~xMn~y)~3As~2Laiho, R. / Lisunov, K. G. / Laehderanta, E. / Stamov, V. N. et al. | 1998
- 895
-
Peculiarity of exhibition of magnetic interactions in quaternary semimagnetic semiconductor Cd~1~-~x~-~yMn~xFe~yTeNikitin, P. I. / Savchuk, A. I. / Stolyarchuk, I. D. / Fediv, V. I. et al. | 1998
- 899
-
Near band edge optical properties of the TlInS~2 and TlGaS~2 incommensurate ferroelectricsMamedov, N. / Iida, S. / Matsumoto, T. / Uchiki, H. et al. | 1998
- 903
-
Chemical and structural characterization of high efficiency Cu(In, Ga)Se~2 solar cellsWada, T. et al. | 1998
- 909
-
Development of stable thin film solar modules based on CuInSe~2Karg, F. / Calwer, H. / Rimmasch, J. / Probst, V. et al. | 1998
- 915
-
Engineered phase inhomogeneity for CIS device optimizationStanbery, B. J. / Chang, C.-H. / Anderson, T. J. et al. | 1998
- 923
-
Ternary and multinary compound semiconductors for photovoltaic applicationsDeb, S. K. et al. | 1998
- 931
-
Laplace-DLTS of Cu(In, Ga)Se~2-based devicesIgalson, M. / Zabierowski, P. et al. | 1998
- 935
-
Thin films of semiconducting ZnS-CuInS~2 alloys, their characterization and use for solar cellsBente, K. / Wagner, G. / Lazar, M. / Lange, U. et al. | 1998
- 939
-
Determination of the Al-content in LPE-grown Al~xGa~1~-~xAs solar cell structuresDimroth, F. / Bett, A. W. / Letay, G. et al. | 1998
- 943
-
Sub-m semiconductor device structures in CuInSe~2Richter, S. / Lyakhovitskaya, V. / Cohen, S. R. / Gartsman, K. et al. | 1998
- 947
-
A transmission electron microscopy study of high-efficiency CuIn(Ga)Se~2 solar cellsLeicht, M. / Stenkamp, D. / Strunk, H. P. et al. | 1998
- 951
-
Photovoltaic properties of In~2O~3/CuInSe~2 heterostructures prepared by the method of thermal oxidationMedvedkin, G. A. et al. | 1998
- 955
-
Characterization and optimization of CuGaSe~2/CdS/ZnO heterojunctionsNadenau, V. / Braunger, D. / Hariskos, D. / Schock, H. W. et al. | 1998
- 959
-
Coordinate-sensitive photoelements with heterostructures based on A^3B^6 and A^1B^3C^6~2-type layered compoundsKyazym-Zade, A. G. / Abasova, A. Z. / Gasanova, L. G. et al. | 1998
- 963
-
CuInS~2 solar cells prepared by a sequential process using sulphur vapourKlaer, J. / Bruns, J. / Henninger, R. / Klenk, R. et al. | 1998
- 967
-
Photovoltaic effect in TlInS~2-, TlGaSe~2- and TlGaS~2-based barrier structuresRud, Y. V. / Rud, V. Y. / Iida, S. / Morohashi-Yamazaki, M. et al. | 1998
- 971
-
Induced photopleochroism of ZnO/CdS/Cu(In, Ga)Se~2 solar cellsRud, V. Y. / Rud, Y. V. / Walter, T. / Schock, H. W. et al. | 1998
- 975
-
The influence of copper indium selenide and related chalcopyrite solar cell materials on the behaviour of cell populations in vitro in comparison with the elements copper, indium, gallium, selenium and sulfurBeilharz, C. / Benz, K. W. / Neupert, G. / Welker, D. et al. | 1998
- 979
-
Metastability in the electrical transport of Cu(In, Ga)Se~2 solar cellsEngelhardt, F. / Schmidt, M. / Meyer, T. / Seifert, O. et al. | 1998
- 983
-
Ionizing irradiation of photoresistors and diode structures on the base of TlGaSe~2 and TlInSe~2 single crystalsAbasova, A. Z. / Kerimova, E. M. / Muradova, G. A. / Pashaev, A. M. et al. | 1998
- 989
-
NO~2 gas sensor using ITO thin films prepared by electron shower and magnetron sputteringYumoto, H. / Inoue, T. / Watanabe, T. / Kanie, H. et al. | 1998
- 993
-
The simulation of backward parametric oscillation in planar optical waveguides containing CdGeP~2Voevodin, V. G. / Leontieva, O. V. et al. | 1998
- 997
-
New type photoconvertors on the ternary chalcopyrite semiconductorsRud, V. Y. / Rud, Y. V. / Shpunt, V. C. / Iida, S. et al. | 1998
- 1001
-
Photoluminescence characteristics and stimulated emission of CaGa~2S~4:Eu^2^+ crystalMatsumoto, T. / Iida, S. / Mamedov, N. T. / Maruyama, Y. et al. | 1998
- 1005
-
Absorption edge and spin-glass behaviour of MnIn~2Se~4~-~xS~x single crystalsSagredo, V. / Nieves, L. / Fiorani, D. et al. | 1998
- 1009
-
Phase transition in layered oxysulfide (La~1~-~xSr~x)OCuSOhtani, T. / Tachibana, Y. et al. | 1998
- 1013
-
High pressure investigation of the tetragonal distortion and the anion displacement in AgGaX~2 (X = S, Se, Te)Mori, Y. / Iwamoto, S. / Takarabe, K. / Minomura, S. et al. | 1998
- 1017
-
Charge state of tin atoms in the ternary semiconductor phases of Sn~1~-~xAg~2~xTe and Sn~1~-~xCu~2~xTeRogacheva, E. I. / Seregin, P. P. / Nashchekina, O. N. et al. | 1998
- 1021
-
New compounds in the Y-Ba-W-Cu-O systemNipan, G. D. / Kol'tsova, T. N. / Gavrichev, K. S. / Manca, P. et al. | 1998
- 1025
-
New approach to the phase transformations in the system Bi~2O~3-SrO-CaO-CuONikiforova, G. / Nipan, G. et al. | 1998