Hydrogen interaction with phosphorus ion implanted silicon (Englisch)
- Neue Suche nach: Tonini, R.
- Neue Suche nach: Monelli, A.
- Neue Suche nach: Corni, F.
- Neue Suche nach: Ottaviani, G.
- Neue Suche nach: Tonini, R.
- Neue Suche nach: Monelli, A.
- Neue Suche nach: Corni, F.
- Neue Suche nach: Ottaviani, G.
- Neue Suche nach: Coffa, S.
In:
Ion implantation technology 94
;
801-804
;
1995
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Hydrogen interaction with phosphorus ion implanted silicon
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Beteiligte:Tonini, R. ( Autor:in ) / Monelli, A. ( Autor:in ) / Corni, F. ( Autor:in ) / Ottaviani, G. ( Autor:in ) / Coffa, S.
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Kongress:10th International conference, Ion implantation technology 94 ; 1994 ; Catania; Italy
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Erschienen in:Ion implantation technology 94 ; 801-804
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsdatum:01.01.1995
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Format / Umfang:4 pages
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Anmerkungen:xvii, 1012p; Also known as IIT 94; Described as proceedings. See also 6180.86132 vol 96 no 1-2 1995 for selected papers
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Ion implantation from the past and into the futureMoffatt, S. et al. | 1995
- 7
-
Negative-ion implantation techniqueIshikawa, J. / Tsuji, H. / Toyota, Y. / Gotoh, Y. et al. | 1995
- 13
-
Beam energy purity in the Eaton NV-8200P ion implanterKamenitsa, D. E. / Rathmell, R. D. et al. | 1995
- 18
-
Using a wedge oxide to monitor low energy beam purity by means of Therma-Wave measurements in the Eaton NV-8200P ion implanterKamenitsa, D. E. / Pearce, N. O. et al. | 1995
- 22
-
Charge neutralization in ion implantersSmatlak, D. L. / Mack, M. E. / Mehta, S. et al. | 1995
- 30
-
The precision implant 9500 plasma flood system - the advanced solution to wafer chargingIto, H. / Kamata, T. / England, J. / Fotheringham, I. et al. | 1995
- 34
-
Surface charge control during high-current ion implantation: characterization with CHARM-2 sensorsCurrent, M. I. / Lukaszek, W. / Velle, M. C. / Tripsas, N. H. et al. | 1995
- 39
-
Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomenaEngland, J. G. / Cook, C. E. A. / Armour, D. G. / Foad, M. A. et al. | 1995
- 43
-
The charging mechanism of insulated electrode in negative-ion implantationSakai, S. / Gotoh, Y. / Tsuji, H. / Toyota, Y. et al. | 1995
- 48
-
Plasma model for charging damageVella, M. C. / Lukaszek, W. / Current, M. I. / Tripsas, N. H. et al. | 1995
- 52
-
Studies of water surface charging using the THOR monitor deviceMalone, P. / Shull, W. / England, J. G. / Fotheringham, I. et al. | 1995
- 56
-
Generation and transport of contamination in high current implantersBlake, J. / Jones, M. / Meyyappan, N. / Hirokawa, S. et al. | 1995
- 62
-
ULSI-process demands of contamination control on ion implantationNatsuaki, N. / Kamata, T. / Kondo, K. / Kureishi, Y. et al. | 1995
- 68
-
Metals contamination in high and medium current implantersDowney, D. F. / Angel, G. C. et al. | 1995
- 75
-
Effects of energy, dose, and beam current on particle counts in medium-current phosphorus implantsBrewster, N. R. et al. | 1995
- 80
-
Particle generation in ion implantersMack, M. E. / Angel, G. C. / Pascucci, M. L. / Prisby, D. et al. | 1995
- 87
-
Trace elemental analysis of tungstenCherekdjian, S. / Ramsbey, M. / Anjum, M. et al. | 1995
- 92
-
Degradation of very thin gate dielectrics for MOS structures due to through-oxide ion implantationBaumvol, I. J. R. / Stedile, F. C. / Rigo, S. / Ganem, J.-J. et al. | 1995
- 99
-
Characterization of oxide layers grown on implanted siliconFranco, G. / Raineri, V. / Frisina, F. / Rimini, E. et al. | 1995
- 104
-
Application of defect related generation current for low-dose ion implantation monitoringHazdra, P. / Haslar, V. / Vobecky, J. et al. | 1995
- 109
-
Measurement of the distribution of damage in ion implanted GaAs by differential reflectance spectroscopyKraisingdecha, P. / Gal, M. / Tan, H. H. / Jagadish, C. et al. | 1995
- 113
-
Surface characterization of semiconductors with plasma and thermal waves analysisBuchmann, F. / Geiler, H. D. et al. | 1995
- 118
-
Reduction of measurement system variation using the Discrimination RatioNunes, J. / Cherekdjian, S. et al. | 1995
- 123
-
On the determination of two-dimensional carrier distributionsVandervorst, W. / Clarysse, T. / De Wolf, P. / Hellemans, L. et al. | 1995
- 133
-
Improved delineation technique for two dimensional dopant profilingGong, L. / Petersen, S. / Frey, L. / Ryssel, H. et al. | 1995
- 139
-
Two-dimensional profiling by selective etching: the role of implant induced secondary defectsSpinella, C. / Raineri, V. / Saggio, M. / Privitera, V. et al. | 1995
- 144
-
Mask edge effects in high energy implants: dopant and defect distributionsPrivitera, V. / Raineri, V. / Saggio, M. / Priolo, F. et al. | 1995
- 150
-
2 MeV aluminum implantation into silicon: radiation damagePfeifer, B. / Lindner, J. K. N. / Rauschenbach, B. / Stritzker, B. et al. | 1995
- 155
-
Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edgesHobler, G. et al. | 1995
- 163
-
3D modeling of ion implantation into crystalline silicon: influence of damage accumulation on dopant profilesPosselt, M. et al. | 1995
- 168
-
Analytical modeling of lateral implantation profilesLorenz, J. / Wierzbicki, R. J. / Ryssel, H. et al. | 1995
- 173
-
Channeling implantation into chemical compoundsNakagawa, S. T. et al. | 1995
- 179
-
Applications of focused ion beams to nondestructive analysesTakai, M. et al. | 1995
- 187
-
Implantation and transient boron diffusion: the role of the silicon self-interstitialStolk, P. A. / Gossmann, H.-J. / Eaglesham, D. J. / Poate, J. M. et al. | 1995
- 196
-
Studies of point defect/dislocation loop interaction processes in siliconJones, K. S. / Robinson, H. G. / Listebarger, J. / Chen, J. et al. | 1995
- 202
-
On the relation between dopant anomalous diffusion in Si and end-of-range defectsClaverie, A. / Laanab, L. / Bonafos, C. / Bergaud, C. et al. | 1995
- 210
-
Point defects observed in crystalline silicon implanted by MeV Si ions at elevated temperaturesLalita, J. / Svensson, B. G. / Jagadish, C. et al. | 1995
- 215
-
EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into siliconSealy, L. / Barklie, R. C. / Lulli, G. / Nipoti, R. et al. | 1995
- 219
-
Defect evolution in ion implanted crystalline Si probed by in situ conductivity measurementsBattaglia, A. / Coffa, S. / Priolo, F. / Spinella, C. et al. | 1995
- 223
-
Recombination enhanced suppression of deep trap accumulation in silicon during He^+ ion implantationErokhin, Y. N. / Ravi, J. / White, C. W. / Rozgonyi, G. A. et al. | 1995
- 227
-
Pre-amorphization damage study in as-implanted siliconCellini, C. / Carnera, A. / Berti, M. / Gasparotto, A. et al. | 1995
- 232
-
Dopant, defects and oxygen interaction in MeV implanted Czochralski siliconLa Ferla, A. / Galvagno, G. / Raineri, V. / Priolo, F. et al. | 1995
- 236
-
Variation of end of range density with ion beam energy and the predictions of the "excess interstitials" modelLaanab, L. / Bergaud, C. / Bonafos, C. / Martinez, A. et al. | 1995
- 241
-
Optical absorption in ion implanted Si filmsZammit, U. / Madhusoodanan, K. N. / Marinelli, M. / Scudieri, F. et al. | 1995
- 245
-
Deep defect levels and mechanical strain in Ge^+-implanted siliconSuprun-Belevich, Y. R. / Palmetshofer, L. et al. | 1995
- 249
-
Gettering of metals by He induced voids in siliconRaineri, V. / Battaglia, A. / Rimini, E. et al. | 1995
- 253
-
Proximity gettering of Au to ion beam induced defects in siliconWong-Leung, J. / Williams, J. S. / Elliman, R. G. / Nygren, E. et al. | 1995
- 257
-
Proximity gettering of transition metals in silicon by ion implantationOverwijk, M. H. F. / Politiek, J. / De Kruif, R. C. M. / Zalm, P. C. et al. | 1995
- 261
-
Transient kinetics in solid phase epitaxy of Ni doped amorphous siliconKuznetsov, A. Y. / Svensson, B. G. et al. | 1995
- 265
-
Control of defects in C^+, Ge^+, and Er^+ implanted Si using post amorphization and solid phase regrowthCristiano, F. / Zhang, J. P. / Wilson, R. J. / Gillin, W. P. et al. | 1995
- 271
-
Point defect induced SPE growth of Ni implanted siliconVyatkin, A. F. / Kuznetsov, A. Y. et al. | 1995
- 276
-
Ion-beam induced relaxation of strained Ge~xSi~1~-~x layersKringhoej, P. / Glasko, J. M. / Elliman, R. G. et al. | 1995
- 281
-
Thermodynamic behaviour of GeO~2 formed by oxygen implantation into relaxed Si~0~.~5Ge~0~.~5 alloyZhang, J. P. / Hemment, P. L. F. / Castle, J. E. / Liu, H. D. et al. | 1995
- 286
-
High-dose Ge^+ implantation into silicon at elevated substrate temperatureNan Xiang Chen / Schork, R. / Ryssel, H. et al. | 1995
- 290
-
A comparative study of MeV and medium-energy ion implantation into III-V compoundsWesch, W. / Wendler, E. / Bachmann, T. / Herre, O. et al. | 1995
- 294
-
Inversion of dose rate effects in ion implanted gallium arsenide in the low dose regimeJasper, C. / Morton, R. / Lau, S. S. / Haynes, T. E. et al. | 1995
- 298
-
2 MeV As^+ implantation in InAsWendler, E. / Wilson, R. J. / Jeynes, C. / Wesch, W. et al. | 1995
- 302
-
Channeling investigations of MeV Zn implanted InPKling, A. / Krause, H. / Flagmeyer, R.-H. / Vogt, J. et al. | 1995
- 307
-
MeV energy implantation of Fe in InPCarnera, A. / Gasparotto, A. / Scordilli, A. / Priolo, F. et al. | 1995
- 311
-
Ion implantation of group IV or VI elements for n-type doping of InPRidgway, M. C. / Kringhoej, P. / Johnson, C. M. et al. | 1995
- 315
-
Defect recovery of ion implanted InPWeyer, G. et al. | 1995
- 319
-
Viscosity of amorphous InP during room temperature structural relaxationCliche, L. / Roorda, S. / Masut, R. A. et al. | 1995
- 323
-
High-energy ion implantation for electrical isolation of InP-based materials and devicesRidgway, M. C. / Elliman, R. G. / Faith, M. E. / Kemeny, P. C. et al. | 1995
- 327
-
Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical propertiesClaverie, A. / Fujioka, H. / Laanab, L. / Liliental-Weber, Z. et al. | 1995
- 331
-
Hyperthermal (30-500 eV) C^+ ion-beam doping into GaAs during molecular beam epitaxyIida, T. / Makita, Y. / Kimura, S. / Kawasumi, Y. et al. | 1995
- 335
-
High temperature ion implantation of silicon carbideWesch, W. / Heft, A. / Wendler, E. / Bachmann, T. et al. | 1995
- 339
-
Optical and structural properties of hydrogen implanted silicon carbon alloysCompagnini, G. / Calcagno, L. / Foti, G. et al. | 1995
- 343
-
Ion bombardment of C~6~0: Raman study of amorphization and polymerizationPalmetshofer, L. / Kastner, J. et al. | 1995
- 347
-
Ion beam synthesis of yttrium silicides in (111)SiJin, S. / Lin, J. H. / Chen, L. J. / Shi, W. D. et al. | 1995
- 352
-
Growth of epitaxial CoSi~2 on SIMOX material by a solid-phase reaction of deposited TiN/Co/Ti layersLiu, P. / Zhou, Z. / Lin, C. / Zou, S. et al. | 1995
- 356
-
Ternary iron-cobalt silicide fabricated by ion beam synthesisHarry, M. A. / Curello, G. / Reeson, K. J. / Finney, M. S. et al. | 1995
- 361
-
Thermal stability of TiSi~2 on ion implanted siliconChen, J. F. / Chen, L. J. / Lur, W. et al. | 1995
- 366
-
Depth, phase and coarsening evolution of FeSi~2 precipitates upon thermal annealingMaltez, R. L. / Behar, M. / Amaral, L. / Fichtner, P. F. P. et al. | 1995
- 370
-
Ion implantation for optical applicationsBuchal, C. et al. | 1995
- 374
-
Room temperature light emitting silicon diodes fabricated by erbium ion implantationFranzo, G. / Priolo, F. / Coffa, S. / Polman, A. et al. | 1995
- 378
-
Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with ErLombardo, S. / Campisano, S. U. / Van de Hoven, G. N. / Polman, A. et al. | 1995
- 382
-
Irradiation-induced Ag-colloid formation in ion-exchanged soda-lime glassCaccavale, F. / De Marchi, G. / Gonella, F. / Mazzoldi, P. et al. | 1995
- 387
-
Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO~2 formed by ion implantationKomoda, T. / Kelly, J. / Cristiano, F. / Nejim, A. et al. | 1995
- 392
-
Thermal crystallization of Er^+-implanted KTiOPO~4 single crystalsBachmann, T. / Rottschalk, M. et al. | 1995
- 397
-
CL characterization and depth distributions of waveguide materials after 400 keV Eu implantationsCan, N. / Yang, B. / Hole, D. E. / Townsend, P. D. et al. | 1995
- 401
-
Fabrication of bifocal microlenses on InP and Si by Ar ion beam etchingRen, C. / Deyuan, X. / Guoliang, C. / Xianghuai, L. et al. | 1995
- 405
-
Application of advanced ion implantation techniques to Flash memoriesCappelletti, P. / Fratin, L. / Ravazzi, L. et al. | 1995
- 411
-
Comparison of retrograde and conventional p-wells in regard of latch-up susceptibilityBogen, S. / Koerber, K. / Gong, L. / Frey, L. et al. | 1995
- 416
-
High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technologyJacobson, D. C. / Kamgar, A. / Eaglesham, D. J. / Lloyd, E. J. et al. | 1995
- 420
-
SIMOX - a new challenge for ion implantationAuberton-Herve, A. / Wittkower, A. / Aspar, B. et al. | 1995
- 425
-
Ion-induced current measurement for optimization of buried implanted layers against soft errorsTakai, M. / Kishimoto, T. / Sayama, H. / Ohno, Y. et al. | 1995
- 429
-
Large-scale implantation and deposition research at Los Alamos National LaboratoryWood, B. P. / Henins, I. / Reass, W. A. / Rej, D. J. et al. | 1995
- 435
-
Modelling of charging effects in plasma immersion ion implantationEn, W. / Cheung, N. W. et al. | 1995
- 441
-
Compact high current ion implantation systemMurakami, J. / Kabasawa, M. / Shiraishi, T. / Tanaka, Y. et al. | 1995
- 445
-
Serial high-current implantation of large substratesWhite, N. R. / Sieradzki, M. / Satoh, S. et al. | 1995
- 450
-
Development of a high current MeV ion implanter using a variable energy RFQ linacAmemiya, K. / Ito, J. / Tokiguchi, K. / Sato, T. et al. | 1995
- 454
-
Introducing the Eaton NV-GSD/HE high energy implanterWilson, S. / McIntyre, T. et al. | 1995
- 458
-
The MeV-implantation facility at BochumBrand, K. et al. | 1995
- 462
-
The performance of the industrial high energy ion implanter ULVAC IH-860Agawa, Y. / Suzuki, H. / Yokoo, H. / Sakurada, Y. et al. | 1995
- 466
-
The CIIC-facility at the University of LublinLatuszynski, A. / Maczka, D. et al. | 1995
- 470
-
Nissin EXCEED 2000: A new high performance medium current implanterKawai, T. / Naito, M. / Tanjyo, M. / Nagai, N. et al. | 1995
- 474
-
The Nissin NH-50SR 500 kV implanter using multiply charged ionTamura, Y. / Ohnishi, T. / Shin'yama, T. / Maeda, T. et al. | 1995
- 478
-
Throughput rate enhancements for the Applied Materials Precision Implant 9500Edwards, P. / Morley, S. / Wells, S. / Wright, C. et al. | 1995
- 482
-
Low energy beam current enhancement for production-worthy shallow junction processesDevaney, A. S. / Bryan, N. / Ito, H. / Loome, D. A. et al. | 1995
- 486
-
Ion source plasma analysis for enhanced arc chamber designIto, H. / Devaney, A. / Bryan, N. / Armour, D. G. et al. | 1995
- 491
-
The Precision Implant 9500 Bernas ion sourcePovall, S. / Devaney, A. / Lowrie, C. / Wauk, M. et al. | 1995
- 495
-
High current RF-plasma-sputter-type heavy negative-ion source for negative-ion implanterTsuji, H. / Ishikawa, J. / Okayama, Y. / Toyota, Y. et al. | 1995
- 499
-
An ECR ion source on a 450kV platform for MeV-mA implantationCiavola, G. / Gammino, S. et al. | 1995
- 503
-
Ion sources for radioactive implantationLatuszynski, A. / Maczka, D. / Yushkevich, Y. V. et al. | 1995
- 507
-
Ion source development at LBL for ion implantation applicationLeung, K. N. / Bachman, D. S. / Herz, P. R. / Kunkel, W. B. et al. | 1995
- 511
-
High current radio frequency plasma source with a magnetic line-cusp fieldYabe, E. / Takahashi, K. / Kawamura, K. / Takayama, K. et al. | 1995
- 515
-
A fast dual-crucible vaporizer for the Varian E220 and E500 medium current ion implantersWalther, S. R. / Doody, R. D. et al. | 1995
- 519
-
Implant test results for zeolite based 100% PH~3 and AsH~3 gas bottles on the Varian E500 implanterWalther, S. R. / Mehta, S. / Brown, R. L. / Kaim, R. et al. | 1995
- 523
-
A zeolite-based atmospheric pressure hydride gas source for ion implantationMcManus, J. V. / Tom, G. M. / Kirk, R. et al. | 1995
- 527
-
An improved charge exchange cell for Genus MeV implantersLaFontaine, M. / Tokoro, N. / Quattrini, V. / Bissonnette, D. et al. | 1995
- 531
-
Production of multicharged boron ion from solids in electron cyclotron resonance ion sourceKato, Y. / Ishii, S. et al. | 1995
- 535
-
Enhancement of ion beam current on a metal ion implantation equipmentInouchi, Y. / Yamashita, T. / Fujiwara, S. / Matsuda, Y. et al. | 1995
- 539
-
Emittance considerations in beam line designRenau, A. / Evans, E. / Sullivan, P. J. et al. | 1995
- 543
-
The use of KOBRA for implanter beamline design and optimisationFoad, M. A. / Armour, D. G. / England, J. G. et al. | 1995
- 548
-
Safety considerations in cryopumping systems for ion implantersLiebert, R. B. / Ficarra, L. / Eddy, R. / Ghen, W. et al. | 1995
- 553
-
Application of spreadsheet matrix methods to ion implanter vacuum modelingStone, S. W. et al. | 1995
- 557
-
Reducing energy contamination in ion implanters using differential vacuum pumpingDowney, D. F. / Stone, S. W. et al. | 1995
- 563
-
A new device for the ion beam assisted treatment of powdersMueller, H. R. / Ensinger, W. / Wolf, G. K. et al. | 1995
- 567
-
Particle reduction of HI implanter in the fabrication of VLSI circuitsTsai, S. C. / Sheu, K. K. / Yang, H. C. / Lin, P. et al. | 1995
- 571
-
Enhancements to the particulate performance of the Applied Materials 9500Mitchell, R. / Wauk, M. et al. | 1995
- 575
-
Lognormal statistics for particles: models, causes and implicationsSinclair, F. / Blake, J. / Brubaker, S. et al. | 1995
- 579
-
In situ particle monitoring in a Varian E1000HP ion implanterSedgewick, J. / Elzingre, M. / Evanko, M. / Mulderrig, M. et al. | 1995
- 583
-
In situ particle monitoring in a Varian medium current implanterSedgewick, J. / Hertel, R. / Rizzo, G. et al. | 1995
- 588
-
Contamination eliminator system of medium current ion implanterMihara, Y. / Niikura, K. / Fukui, R. / Sakurada, Y. et al. | 1995
- 592
-
Metal contamination in ion implantation processesPolignano, M. L. / Bresolin, C. / Cazzaniga, F. / Queirolo, G. et al. | 1995
- 596
-
Metallic contaminants from silicone elastomersCherekdjian, S. / Murry, J. / Wood, C. / Gordon, M. et al. | 1995
- 600
-
Use of a low temperature plasma system for wafer charge control in high current implantationMehta, S. / Nee, R. / Walther, S. R. / Eddy, R. et al. | 1995
- 604
-
Measurements of charge neutralization due to photoresist outgassingKellerman, P. / Hrynyk, W. et al. | 1995
- 608
-
Plasma flood guns - NV10, PI9000 - Old machine, new retrofitCherekdjian, S. / Murry, J. / Oftedahl, R. / Montgomery, H. A. et al. | 1995
- 612
-
Charging voltage measurement of an isolated electrode and insulators during negative-ion implantationTsuji, H. / Toyota, Y. / Ishikawa, J. / Sakai, S. et al. | 1995
- 616
-
Measuring uniformity of low dose implants performed on a high current implanterHennessy, P. et al. | 1995
- 622
-
Dose uniformity over large-area wafersCurrent, M. I. / Adibi, B. / Marin, T. / Leung, S. et al. | 1995
- 626
-
Dose uniformity in the Eaton NV-8200P ion implantation systemBrubaker, S. R. / Parmantie, W. et al. | 1995
- 630
-
Sources of variation in thermal wave measurements with high current ion implantationRomig, T. / Bold, T. / Pearce, N. et al. | 1995
- 634
-
Characterization and evaluation of the PI9500 high current implanter for low dose (1E11-1E14) implants in sub-micron device manufactureWilson, J. W. / Flannigan, E. / Flood, J. / Liu, X. et al. | 1995
- 638
-
In-situ monitoring of ion implantation in the high dose range by thermal wave analysisSchlemm, H. / Geiler, H.-D. / Kluge, A. et al. | 1995
- 642
-
Photothermal response of ion implanted siliconWagner, M. / Kaepplinger, S. / Geiler, H.-D. et al. | 1995
- 646
-
Trends in the sheet resistance and uniformity of medium dose n- and p-type implants as a function of time and wafer surface preparationCummings, J. J. / Downey, D. F. / Eddy, R. J. / Meloni, M. L. et al. | 1995
- 651
-
Enhanced thermal wave monitoring of high dose implantationHagihara, T. / Matsumoto, K. / Kuribara, M. / Pearce, N. et al. | 1995
- 656
-
Reflected optical second harmonic generation as a method for characterization of ion-implanted, thermal annealed silicon surfaces and silicon-insulator interfacesKravetsky, I. V. / Kulyuk, L. L. / Micu, A. V. / Vieru, I. S. et al. | 1995
- 660
-
Mass resolution & beam purityCherekdjian, S. / Ramsbey, M. / McComas, W. / Anjum, M. et al. | 1995
- 664
-
Reduction of boron cross contamination levels during arsenic implants using the Applied Materials Precision Implant 9500Horvath, J. G. / Little, N. / Rigsby, D. J. / Anthony, M. et al. | 1995
- 668
-
Multiply charged, channeled, ion implantationSteeples, K. / Kau, D. C. / Mehta, S. / Kaim, R. et al. | 1995
- 673
-
Monitoring channeling effects in production in low dose implantsHennessy, P. et al. | 1995
- 677
-
Measuring a two dimensional profile of an ion beamSzajnowski, W. J. / England, J. G. / Stephens, K. G. / Fotheringham, I. et al. | 1995
- 681
-
Dedicated test facility for ion beam quality evaluation and spectroscopiesFoad, M. A. / Armour, D. G. / Klimes, Z. / Hilton, B. et al. | 1995
- 685
-
Advanced statistical process control techniques for monitoring the performance of ion implantersYarling, C. B. / Cherekdjian, S. / Nunes, J. et al. | 1995
- 689
-
Impact of implant scanning techniques on yieldPanja, R. / Ignaut, S. et al. | 1995
- 693
-
Photoresist characterization using high dose implantationAxan, B. / Baron, D. / Daniel, S. et al. | 1995
- 697
-
An integrated resist/implant/ash study of different photoresists with respect to implant and ashMcOmber, J. I. / Ostrowski, K. J. / Whitney, L. / Meloni, M. L. et al. | 1995
- 702
-
Uptime improvements by using a Faraday with magnetic electron suppressionLundquist, P. / Albertson, T. / Cahill, K. / Mack, M. E. et al. | 1995
- 706
-
A non-destructive technique for checking SOI buried oxide qualityMeda, L. / Bertoni, S. / Cerofolini, G. F. / Paglinao, P. et al. | 1995
- 711
-
Stopping power and charge equilibration process for channeled He ions along (100) and (110) directions of Si crystalDos Santos, J. H. R. / Grande, P. L. / Boudinov, H. / Behar, M. et al. | 1995
- 716
-
Dechanneling by thermal vibrations in silicon ion implantationMarques, L. A. / Rubio, J. E. / Jaraiz, M. / Arias, J. et al. | 1995
- 720
-
Monte-Carlo computer simulations of PIXE-channelingKling, A. et al. | 1995
- 724
-
Dynamic Monte Carlo simulation of high fluence ion implantation into TiNMiyagawa, Y. / Nakayama, A. / Nakao, S. / Tanemura, S. et al. | 1995
- 728
-
New practical model for depth profiles of implanted ions with channeling tail at energies of sub-MeV regionKase, M. / Murakami, J. / Kubo, T. / Mori, H. et al. | 1995
- 732
-
Analytical simulation of high energy boron, phosphorus, and arsenic implants in crystalline siliconGong, L. / Lucassen, M. / Bogen, S. / Frey, L. et al. | 1995
- 737
-
Proton stopping in gases and solidsKondratyev, V. N. / Bonasera, A. et al. | 1995
- 741
-
BS and ERD analysis of the metal-glass interfaces produced by high energy metal Ion Beam Assisted DepositionDuvanov, S. M. / Kobzev, A. P. / Tolopa, A. M. et al. | 1995
- 745
-
Defects generated by dispersive high energy ion beamHazdra, P. / Spurny, F. / Vobecky, J. et al. | 1995
- 749
-
Passive damage detection of arsenic implanted siliconLowell, J. / Anjum, M. / Wenner, V. / Kyaw, M. et al. | 1995
- 752
-
The evolution of mask-edge-defects during IC's processingHsieh, Y. F. / Tsui, B. Y. / Chang, C. H. et al. | 1995
- 756
-
End-of-range defects driven redistribution in uniformly boron doped silicon during annealingBergaud, C. / Mathiot, D. / Laanab, L. / Claverie, A. et al. | 1995
- 759
-
Identification of residual damage energy levels in boron implanted siliconDue�as, S. / Castan, E. / Enriquez, L. / Barbolla, J. et al. | 1995
- 763
-
Point defect depth distribution in Si implanted with high energy ionsDvurechenskii, A. V. / Groetzschel, R. / Herrman, F. / Karanovich, A. A. et al. | 1995
- 763
-
Some point defects removal in silicon by 340 MeV Xe ion bombardmentAntonova, I. V. / Dvurechenskii, A. V. / Karanovich, A. A. / Klose, H. et al. | 1995
- 771
-
Annihilation of stacking fault tetrahedra by post amorphisation of SIMOX structuresGiles, L. F. / Cristiano, F. / Nejim, A. / Curello, G. et al. | 1995
- 775
-
The effects of film structure on the boron penetration in BF^+~2-implanted poly-SiChu, C. H. / Chao, T. S. / Wang, C. F. / Ho, K. J. et al. | 1995
- 779
-
Simulation of antimony diffusion in heavily doped Si by rapid thermal annealing with regard to collective transport phenomenaFedotov, S. A. et al. | 1995
- 783
-
Annealing behaviors of 5 keV, 5x10^1^5/cm^2 ion implanted (001)SiYang, J. J. / Chu, C. H. / Chen, L. J. et al. | 1995
- 787
-
Annealing behaviors of P^+-implanted silicon inside miniature size oxide openingsHsu, S. N. / Chen, L. J. et al. | 1995
- 791
-
Nitrogen in-diffusion and accumulation in oxygen-implanted silicon during thermal annealingBultena, S. / Gujrathi, S. C. / Brebner, J. L. / Yelon, A. et al. | 1995
- 797
-
Formation of diamond phases in Si substrate by means of carbon ion implantationShow, Y. / Izumi, T. / Mori, Y. / Hatta, A. et al. | 1995
- 801
-
Hydrogen interaction with phosphorus ion implanted siliconTonini, R. / Monelli, A. / Corni, F. / Ottaviani, G. et al. | 1995
- 805
-
Structural and spectroscopic analysis of high dose carbon ion implantation processes in siliconSerre, C. / Perez-Rodriguez, A. / Romano-Rodriguez, A. / Morante, J. R. et al. | 1995
- 809
-
Elastic strain in silicon implanted with in situ photoexcitationDanilin, A. B. / Charnyi, L. A. / Nemirovskii, A. W. et al. | 1995
- 814
-
Reverse currents of p^+/n diodes after high energy implantation of C^+ and Ge^+ ions and annealingKoegler, R. / Von Borany, J. / Panknin, D. / Skorupa, W. et al. | 1995
- 819
-
Concentration dependent redistribution of implanted Er^+ in SiO~2/Si layers at high temperaturesBachmann, T. / Kollewe, D. et al. | 1995
- 823
-
Electroluminescence analysis of the SIMOX oxide layerBota, S. / Morante, J. R. / Garrido, B. / Perez-Rodriguez, A. et al. | 1995
- 827
-
Anomalous out-diffusion of ion-implanted arsenic in siliconParker, R. H. / Thomas, S. L. / Leung, S. / Current, M. I. et al. | 1995
- 831
-
Implant-isolation of n-InP and n-InGaAs for PIN photodiode applicationsAkano, U. G. / Mitchell, I. V. / Shepherd, F. R. / Miner, C. J. et al. | 1995
- 835
-
Modification of properties of the inversion layer in p-InAs(Zn) by proton implantationKoltsov, G. I. / Krutenyuk, Y. V. / Skipetrov, E. P. et al. | 1995
- 838
-
Electrical activation of Si implanted into GaAs through As-doped a-Si:H filmsSakaguchi, M. / Yokota, K. / Mori, H. / Shiomi, A. et al. | 1995
- 842
-
Damage removal and evolution of strain in thermally annealed ion implanted GaAsKozanecki, A. / Gwilliam, R. / Kidd, P. / Sealy, B. J. et al. | 1995
- 847
-
Carrier activation in implanted GaAs treated with a thermal and laser annealing combinationPizzuto, C. / Vitali, G. / Rossi, M. / Zollo, G. et al. | 1995
- 852
-
Raman and ellipsometric investigation of GaAs implanted with Se, Cd and Te ionsKulik, M. / Maczka, D. / Akimov, A. N. / Komarov, F. F. et al. | 1995
- 856
-
Flux dependence of implantation damage in GaAs induced by focused gallium ion beamTakai, M. / Hara, S. / Kishimoto, T. / Yanagisawa, J. et al. | 1995
- 860
-
Hall probe measurement limitations in selenium implanted In~0~.~5~3Ga~0~.~4~7AsAnjum, M. / Sealy, B. J. / Gill, S. S. / Cherekdjian, S. et al. | 1995
- 864
-
Implantation of tin, tellurium and argon into In~0~.~5~3Ga~0~.~4~7AsAnjum, M. / Sealy, B. J. / Gill, S. S. / Cherekdjian, S. et al. | 1995
- 868
-
Investigation of annealing behavior of amorphous layers produced by ion-implantation in InP using photoacoustic and Raman spectroscopiesYoshinaga, H. / Agui, T. / Matsumori, T. / Uehara, F. et al. | 1995
- 872
-
Damage behavior of MeV N+ ion implanted GaSbLin, C. / Qian, Y. / He, Z. / Zheng, Y. et al. | 1995
- 876
-
Study of C~6~0 doping with Xe using the Moessbauer resonance in ^1^3^3CsPattyn, H. / Inia, D. / Emberson, S. / Milants, K. et al. | 1995
- 881
-
Diamond-like films obtained by high energy density plasmaYang, J. / Lin, Z.-D. / Wang, L.-X. / Jin, S. et al. | 1995
- 885
-
Ion beam synthesis of homogeneous nitride layers with a high quality front interfaceSchork, R. / Ryssel, H. et al. | 1995
- 889
-
Atomic transport of V and Al induced by N-ion implantation in Ti-6Al-4V-alloy and related TiN surface layer formationAdami, M. / Bonelli, M. / Miotello, A. / Rinner, M. et al. | 1995
- 893
-
Wear resistant coatings deposited on orthopaedic Ti-6AI-4V prostheses by ion beam assisted deposition techniqueBonelli, M. / Miotello, A. / Rinner, M. / Adami, M. et al. | 1995
- 897
-
Improvement of the mechanical properties of titanium alloys for surgical prostheses by ion implantationCaccavale, F. / Lo Russo, S. / Mazzoldi, P. / Bolzan, E. et al. | 1995
- 902
-
Hardening and increased adhesion of TiO~2 surface layers by nitrogen implantationAscheron, C. E. / Fukushima, K. / Yamada, I. et al. | 1995
- 906
-
Ion implantation, low and high temperature ion-beam mixing: different routes for amorphous phase formation in metallic systemsThome, L. / Jagielski, J. et al. | 1995
- 910
-
Nitrogen ion mixed tungsten thin films for metal-organic chemical vapor deposited copper metallizationKim, Y. T. / Lee, C. W. / Kwon, C. S. et al. | 1995
- 914
-
High-energy ion implantation: luminescence studies of solids during irradiationSkuratov, V. A. / Altynov, V. A. / Abu AlAzm, S. M. et al. | 1995
- 918
-
X-ray HRXRD measurements and TEM observations of the lattice damage in 0.70 and 0.74 MeV Si implanted GaAs crystalNipoti, R. / Bocchi, C. / Frigeri, C. / Lanzieri, C. et al. | 1995
- 922
-
Growth and characterisation of cobalt silicide on Si(100) using mass-selected ultra low energy Co^+ beamsFoad, M. A. / Chen, S. M. / Valizadeh, R. / Moffatt, S. et al. | 1995
- 926
-
Synthesis of Co~xFe~1~-~xSi~2 with high-dose ion implantation and reactive codeposition epitaxyVantomme, A. / Wu, M. F. / Degroote, S. / Dekoster, J. et al. | 1995
- 930
-
Low-temperature formation of silicided shallow p^+n junctions by BF^+~2 implantation with various dosages into thin palladium films on Si substratesLin, C. T. / Chou, P. F. / Cheng, H. C. et al. | 1995
- 934
-
Comparison of the growth mechanisms of ion beam synthesised CoSi~2 in crystalline & amorphous siliconHutchinson, S. V. / Finney, M. F. / Reeson, K. J. / Harry, M. A. et al. | 1995
- 939
-
Structural study of Co/Si films synthesized by ion beam assisted depositionYang, J. / Lin, Z.-D. / Yan, X.-S. / Tao, K. et al. | 1995
- 943
-
Ion implantation equipment for flat panel displaysAitken, D. et al. | 1995
- 950
-
Applications of MeV ion implantation technologyBorland, J. O. et al. | 1995
- 955
-
Pixel size reduction of CCD imaging devices by high-energy ion implantationHokari, Y. / Kawakami, Y. / Furumiya, M. / Sawahata, K. et al. | 1995
- 959
-
Study of the high energy doping in Si and SIMOX structures using FTIR spectroscopyKatsidis, C. C. / Siapkas, D. I. / Skorupa, W. / Hatzopoulos, N. et al. | 1995
- 963
-
A novel approach for SIMOX wafer cost reductionMeyyappan, N. / Blake, J. / Nakato, T. / Hsu, V. et al. | 1995
- 967
-
Process optimization for large angle tilt implantKau, D. C. / Steeples, K. / Mistry, K. / Andreoli, M. et al. | 1995
- 972
-
Variation of transistor characteristics with implant angle for arsenic source/drain implantsHennessy, P. et al. | 1995
- 977
-
Study of damage effects of implant and etching in metal-to-p^+ contactsWilson, J. W. / Chapman, R. / Flannigan, E. / Liu, X. et al. | 1995
- 981
-
Studies of ultra-shallow p^+-n junction formation using Plasma DopingFelch, S. B. / Sheng, T. / Ganin, E. / Chan, K. K. et al. | 1995
- 985
-
Plasma dopingMizuno, B. / Nakayama, I. / Shimizu, N. / Kubota, M. et al. | 1995
- 989
-
The Frankfurt PIII-experimentThomae, R. W. / Seiler, B. / Bender, H. / Brutscher, J. et al. | 1995
- 994
-
Design of low cost plasma immersion ion implantation systemKazor, A. / Gwilliam, R. M. / Jeynes, C. / Blewett, M. J. et al. | 1995
- 998
-
Preparation of self-supporting thin Si films by ion implantation and selective etching techniquesSaitoh, K. / Niwa, H. / Nakao, S. / Miyagawa, S. et al. | 1995
- 1002
-
Cluster ion beam processing of materialsYamada, I. / Takaoka, G. H. / Akizuki, M. / Ascheron, C. E. et al. | 1995