Single-Beam and Single-Mode Emission from Surface-Emitting Laser Diodes Based on Surface Mode Emission (Englisch)
- Neue Suche nach: Koeck, A.
- Neue Suche nach: Golshani, A.
- Neue Suche nach: Hainberger, R.
- Neue Suche nach: Gornik, E.
- Neue Suche nach: Koeck, A.
- Neue Suche nach: Golshani, A.
- Neue Suche nach: Hainberger, R.
- Neue Suche nach: Gornik, E.
- Neue Suche nach: Baccarani, G.
- Neue Suche nach: Rudan, M.
In:
ESSDERC'96
26
;
541-544
;
1996
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Single-Beam and Single-Mode Emission from Surface-Emitting Laser Diodes Based on Surface Mode Emission
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Beteiligte:Koeck, A. ( Autor:in ) / Golshani, A. ( Autor:in ) / Hainberger, R. ( Autor:in ) / Gornik, E. ( Autor:in ) / Baccarani, G. / Rudan, M.
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Kongress:European solid state device research conference; 26th, ESSDERC'96 ; 1996 ; Bologna; Italy
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Erschienen in:ESSDERC'96 , 26 ; 541-544ESSDERC -CONFERENCE- , 26 ; 541-544
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Verlag:
- Neue Suche nach: Editions Frontiers
-
Erscheinungsdatum:01.01.1996
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Format / Umfang:4 pages
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Anmerkungen:Also contains papers and programme of a satellite workshop "Thin-film transistors for flat-panel displays"
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ISBN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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[Front cover]| 1996
- 3
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Challenges of Innovation in Microelectronics and Cooperation of Industrial and Nonindustrial R&DWieder, A. W. et al. | 1996
- 23
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Micro- and Opto-electronics Technologies towards the Multimedia EraIkegami, T. et al. | 1996
- 31
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Passivation of Ag on SiO~2 by annealing Ag-Ti alloys in an Ammonia ambientAdams, D. / Alford, T. L. / Laursen, T. / Mayer, J. W. et al. | 1996
- 39
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Development in Electronic Systems is Impacted both by Semiconductor Technology and IC Assembly TechniquesMurari, B. et al. | 1996
- 45
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Recent Advances and Future Trends of ULSI TechnologiesIwai, H. et al. | 1996
- 53
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Quantum Cascade Lasers: New light sources for the Mid-To-Far-InfraredCapasso, F. / Faist, J. / Sirtori, C. et al. | 1996
- 65
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Hot Carrier Reliability of S^4D n-MOSFETsYoshitomi, T. / Saito, M. / Ohguro, T. / Ono, M. et al. | 1996
- 69
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Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFETsHwang, H. / Lee, D.-H. / Hwang, J. M. et al. | 1996
- 73
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A New Charge Pumping Method for Studying the Si-SiO~2 InterfaceManeglia, Y. / Bauza, D. / Ghibaudo, G. et al. | 1996
- 79
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The Influence of Impurity Scattering in Highly Doped SOI-MOSFETsReichert, G. / Ouisse, T. / Pelloie, J. L. / Cristoloveanu, S. et al. | 1996
- 83
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Influence of the Silicon Thickness on the Reverse Short Channel Effect in SOI MOSFETsTsoukalas, D. / Kouvatsos, D. / Tsoi, E. / Revva, P. et al. | 1996
- 87
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Impact of Latch Phenomenon on Low Frequency Noise in SOI MOSFETSJomaah, J. / Dixkens, D. / Pelloie, J. L. / Raynaud, C. et al. | 1996
- 93
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Advanced Ti Salicide Process for sub-0.2 m CMOSRostoll, M.-L. / Maury, D. / Regolini, J.-L. / Haond, M. et al. | 1996
- 97
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Interconnects Integration for 0.25 m CMOS TechnologyMorand, Y. / Lerme, M. / Gobil, Y. / Vinet, F. et al. | 1996
- 101
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Low Dielectric Constant Spin-on-Polymers for Interlayer Dielectric ApplicationsSun, S. C. / Chuang, Y. C. et al. | 1996
- 107
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Passive Microwave Antennas Based on Silicon Surface Oriented P-I-N Structure and Ferroelectric CeramicsKoshevaya, S. / Kotsarenko, N. / Gutierrez, E. / Grimalsky, V. et al. | 1996
- 111
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Sensitivity and Noise of MOS Magnetic Field Effect TransistorsKillat, D. / Umbach, F. / Kluge, J. V. / Schmitz, R. et al. | 1996
- 115
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Review Paper - RADFETs for Improved Radiation SensitivityO'Connel, B. / Lane, W. / Kelleher, A. / Adams, L. et al. | 1996
- 121
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Non-Volatile Memories: Issues, Challenges and Trends for the 2000's ScenarioCrisenza, G. / Annunziata, R. / Camerlenghi, E. / Cappelletti, P. et al. | 1996
- 131
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Subthreshold Source-Side Injection (S^3I): a Promising Programming Mechanism for Scaled-Down, Low-Power Flash MemoriesVan Houdt, J. / De Blauwe, J. / Wellekens, D. / Haspeslagh, L. et al. | 1996
- 135
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Non-Volatile EEPROM Cells for Analog Circuit CalibrationLanzoni, M. / Tondi, G. / Galbiati, P. / Ricco, B. et al. | 1996
- 139
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Comparison of the Suitability of Varius Programming Mechanisms Used for Multilevel Non-Volatile Information StorageMontanari, D. / Van Houdt, J. / Wellekens, D. / Hendrickx, P. et al. | 1996
- 145
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Physical Models for 2D Numerical Simulation of New Titanium SALICIDE ProcessesFornara, P. / Touret, O. / Poncet, A. et al. | 1996
- 149
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Influence of the Silicon Nitride Oxidation on the Performance of NCLAD IsolationTixier, A. / Senez, V. / Baccus, B. / Marmiroli, A. et al. | 1996
- 153
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Diffusion of Boron in Polycrystalline SiliconNedelec, S. / Mathiot, D. / Gauneau, M. et al. | 1996
- 157
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A Transient Activation Model for Phosphorus after sub-Amorphizing Channeling ImplantsPuchner, H. / Neary, P. / Aronowitz, S. / Selberherr, S. et al. | 1996
- 161
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Optimization of Poly-Emitter Technologies in a BiCMOS Environment Using Advanced Physical ModelingHoefler, A. / Feudel, T. / Gull, R. / Strecker, N. et al. | 1996
- 165
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Domain Decomposition Method Applied to 3D Finite Element Process SimulationHerbaux, J. / Brocard, D. / Baccus, B. / Senez, V. et al. | 1996
- 171
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Electrical and Morphological Characterization of Sub-Micron Silicon DevicesSpinella, C. et al. | 1996
- 179
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Shallow Trench Isolation for sub 1/4 micron CMOS TechnologiesSallagoity, P. / Paoli, M. / Haond, M. et al. | 1996
- 183
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Shallow Trench Isolation for High Density Flash MemoriesDeleonibus, S. / Heitzmann, M. / Gobil, Y. / Martin, F. et al. | 1996
- 187
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The Stress-Induced Voids Formation in the Polysilicon Film During Poly-Buffered Local Oxidation of Silicon : Characterisation and ModelColpani, P. / Rebora, A. / Pavia, G. / Queirolo, G. et al. | 1996
- 193
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Poly Encapsulated LOCOS Lateral Isolation for 0.25 m CMOSBadenes, G. / Rooyackers, R. / Deferm, L. et al. | 1996
- 199
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Analysis of Micropump Operation Using HDL-A MacromodelsVoigt, P. / Wachutka, G. et al. | 1996
- 203
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A Complete Simulation System for Active Matrix Flat Panel DisplaysRollins, J. G. / Scrobohaci, P. / Durbeck, D. et al. | 1996
- 207
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Dynamic Behavior of a-Si Devices for Flat-Panel DisplaysColalongo, L. / Valdinoci, M. / Pellegrini, A. / Rudan, M. et al. | 1996
- 211
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Light-Addressable Potentiometric Sensors - Model and ExperimentsColalongo, L. / Verzellesi, G. / Passeri, D. / Lui, A. et al. | 1996
- 215
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Micromechanical Gas Heat Capacity SensorFrolov, G. A. / Grudin, O. M. / Katsan, I. I. / Lupina, B. I. et al. | 1996
- 221
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Investigation of Hole and Electron Back Injected Tunneling Currents in a Poly-Silicon Emitter Complementary Bipolar TechnologyBashir, R. / Hebert, F. / Basile, D. / Su, D. et al. | 1996
- 225
-
Ge^+ Dose Dependence of Electrical Characteristics in Germanium Ion-Implanted Polycrystalline Silicon FilmsKang, M.-K. / Matsui, T. / Wada, K. / Kuwano, H. et al. | 1996
- 229
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Low Temperature Polycrystalline Silicon Thin Film Transistors Having Titanium Disilicide Source and Drain ContactsChang, S.-K. / Kim, O. et al. | 1996
- 233
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Hot Carrier Reliability Characteristics of Ultra Short Channel CMOSFETsHwang, H. et al. | 1996
- 237
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Determination of the Generation Lifetime in Si/SiGe/Si Epitaxial Layer Stacks Grown by MBE and LPCVD Using non Equilibrium Simultaneous HF/LF MOS CV MeasurementsSorge, R. / Heinemann, B. / Zeindl, H. P. / Lippert, G. et al. | 1996
- 241
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Inversion Layer Injection Devices - a New Class of Semiconductor DevicesUdrea, F. / Amaratunga, G. A. J. / Humphrey, J. / Clark, J. et al. | 1996
- 245
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MIS Auger TransistorOstroumova, E. V. / Rogachev, A. A. et al. | 1996
- 249
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3D Analysis of a Shallow Trench Isolated 0.25/0.25 m NMOS TransistorSallagoity, P. / Vincent, G. / Poncet, A. et al. | 1996
- 253
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Characterization and Matching Analysis of 50 nm-NMOS-TransistorsHorstmann, J. T. / Hilleringmann, U. / Goser, K. et al. | 1996
- 259
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Optimization of Hetero-FET Alloy Composition for Low Noise Applications in Millimeter-Wave Frequency RangeAbou-Elnour, A. / Schuenemann, K. et al. | 1996
- 263
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Modelling of Gate Currents in MOSFETs Operating at Low Drain VoltagesChang, M. Y. / Dyke, D. W. / Leung, C. C. C. / Childs, P. A. et al. | 1996
- 267
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Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction FormationGodignon, P. / Morvan, E. / Montserrat, J. / Jorda, X. et al. | 1996
- 271
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An Analytical Model for Hot-Carrier-Induced Degradation of Submicron n-MOSFETBouchakour, R. / Hardy, L. / Jourdain, M. et al. | 1996
- 275
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Refined Analytical Model of Combined Thermionic Emission and Drift-Diffusion Current Flow through Schottky StructureRacko, J. / Donoval, D. / Wachutka, G. et al. | 1996
- 279
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Investigation of Thermally Generated Leakage Currents in Silicon pn-Junctions by Means of 2D-Device SimulationsWaschul, S. / Kampmann, A. / Laur, R. et al. | 1996
- 283
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Improved Description of GAA (Gate-All-Around) MOSFET I-V CharacteristicsJurczak, M. / Jakubowski, A. et al. | 1996
- 287
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An Efficient Numerical Approach to the Physics-Based Sensitivity Analysis of Bipolar Semiconductor DevicesDonati Guerrieri, S. / Bonani, F. / Pirola, M. / Ghione, G. et al. | 1996
- 291
-
2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)Udrea, F. / Amaratunga, G. A. J. et al. | 1996
- 295
-
Hydrodynamic Modeling of Transport and Noise Spectra in n^+nn^+ Semiconductor StructuresReggiani, L. / Shiktorov, P. / Gruzinskis, V. / Starikov, E. et al. | 1996
- 299
-
Modelling of Insulated Gate Bipolar Transistors with Buffer-LayersBrunner, H. / Kapels, H. / Porst, A. / Silber, D. et al. | 1996
- 303
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Electrical Modelling of Silicide Ohmic Contacts for MOS DevicesReeves, G. K. / Holland, A. S. / Harrison, H. B. / Leech, P. W. et al. | 1996
- 307
-
All Silicon Phase-Amplitude Integrated Optical Modulator Based on a BMFET StructureBreglio, G. / Cutolo, A. / Iodice, M. / Spirito, P. et al. | 1996
- 313
-
The Observation of Gate Length Dependence of GIDL in n-MOSFETsSon, J. / Huh, K. / Lee, S. / Hwang, J. et al. | 1996
- 317
-
EXTIGATE: the Ultimate Process Architecture for sub-0.25 m CMOS TechnologiesSchwalke, U. / Kerber, M. / Koller, K. / Jacobs, H. et al. | 1996
- 321
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Channel Engineering Using RP-CVD Epitaxy for High Performance CMOS TransistorsRisch, L. / Schaefer, H. / Lustig, B. / Hofmann, F. et al. | 1996
- 325
-
Comparative Study of Surface and Buried Channel 0.25 m pMOSFETsGuegan, G. / Lerme, M. / Ada-Hanifi, M. / Moi, D. et al. | 1996
- 329
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Design and Characterisation of High-Performance 0.13m NMOS DevicesSchmitz, J. / Paulzen, G. M. / Gravesteijn, D. J. / Montree, A. H. et al. | 1996
- 335
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Multi-Dimensional Process Simulation Software Integration in PROMPTFichtner, W. / Regli, P. et al. | 1996
- 343
-
Level Set Methods for Surface Advancement in Lithography, Etching and DepositionAdalsteinsson, D. / Sethian, J. A. et al. | 1996
- 347
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Rigorous Three-Dimensional Photolithography Simulation over Nonplanar StructuresKirchauer, H. / Selberherr, S. et al. | 1996
- 351
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3-D Adaptive Simulation of Thermal Oxidation ProcessYoon, S. H. / Lee, J. H. / Won, T. Y. / Cho, B. J. et al. | 1996
- 357
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Plasma Doped (PLAD) Deep sub-halfmicron Buried Channel PMOSFETS and its Application to next Generation ULSI CircuitsAhmad, A. / Prall, K. / Chapek, D. L. / Thakur, R. P. S. et al. | 1996
- 361
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Study of DC Stress Induced Leakage Current (SILC) and its Dependence on Oxide NitridationDe Blauwe, J. / Degraeve, R. / Bellens, R. / Van Houdt, J. et al. | 1996
- 365
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Enhanced Hole Trapping in MOS Devices Damaged by Plasma-Induced ChargingBrozek, T. / Chan, Y. D. / Viswanathan, C. R. et al. | 1996
- 369
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Optimization of Nitridation Conditions for High Quality inter-Polysilicon Dielectric LayersKlootwijk, J. H. / Bergveld, H. J. / Van Kranenburg, H. / Woerlee, P. H. et al. | 1996
- 373
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A Plasma NH~3 Process to Improve the Reliability of 0.35 m p^+ Poly-Gate Nitrided Oxide p-MOSFET'sBravaix, A. / Goguenheim, D. / Vuillaume, D. / Thirion, V. et al. | 1996
- 379
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A Novel High-Sensitivity Photodetector with SOI MOS StructureYamamoto, H. / Taniguchi, K. / Hamaguchi, C. et al. | 1996
- 383
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A 4.2K CMOS-Compatible Wide-Spectrum DetectorGutierrez, E. A. / Koshevaya, S. V. / Deen, M. J. et al. | 1996
- 387
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A New Measurement Method of Interface-State Parameters, Based on Dark Current Characterization in CCDsToren, W. J. / Bisschop, J. / Widdershoven, F. P. et al. | 1996
- 391
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Combined Opto-Electronical Simulation of Metal-Semiconductor-Metal (MSM) PhotodetectorsKoerner, T. O. / Krumbein, U. / Bomholt, L. H. / Fichtner, W. et al. | 1996
- 397
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Study and Optimization of Bipolar Power Transistors Using Mixed-Mode SimulationsSchligtenhorst, H. / Hurkx, G. A. M. / Notley, R. / Huang, E. et al. | 1996
- 401
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Gettering Mechanisms and Optimized Lifetime Control in Pt-Doped Silicon Power DevicesCoffa, S. / Camalleri, C. M. / Franco, G. / La Rocca, R. et al. | 1996
- 405
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A Highly Efficient 1.9-GHz Si High Power MOSFETYoshida, I. / Katsueda, M. / Maruyama, Y. / Kohjiro, I. et al. | 1996
- 411
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Electron Velocity Overshoot in Strained Si/Si~1~-~xGe~x MOSFETsGamiz, F. / Lopez-Villanueva, J. A. / Roldan, J. B. / Carceller, J. E. et al. | 1996
- 415
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Leakage Current in Polysilicon TFTs: Experiments and InterpretationColalongo, L. / Valdinoci, M. / Baccarani, G. / Migliorato, P. et al. | 1996
- 419
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Anomalous Low-Frequency C-V Behaviour in Polysilicon TFTsPellegrini, A. / Rudan, M. / Migliorato, P. et al. | 1996
- 425
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A 30GHz f~T Quasi Self-Aligned Single Poly Emitter Bipolar TechnologyDe Pontcharra, J. / Behouche, E. / Ailloud, L. / Thomas, D. et al. | 1996
- 429
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A 0.2 m Emitter Bipolar Technology for Low Cost and High Performance Mixed Analog/Digital ApplicationsMiwa, H. / Ammo, H. / Kato, K. / Ejiri, H. et al. | 1996
- 433
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Performance Improvement in a 200mm BiCMOS Technology by Si/SiGe Heterojunction Bipolar Transistor IntegrationDe Berranger, E. / Bodnar, S. / Chantre, A. / Kirtsch, J. et al. | 1996
- 439
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Bias Stress Stability of C-Doped AlGaAs/GaAs HBTsSheng, H. / Cattani, L. / Amin, F. / Rezazadeh, A. A. et al. | 1996
- 443
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Low-Frequency Noise in Ga~xIn~xP/GaAs Heterojunction Bipolar TransistorsMarkus, H. A. W. / Kleinpenning, T. G. M. et al. | 1996
- 447
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Measurement of the Electron Ionization Coefficient Temperature Dependence in InGaAs-Based Heterojunction Bipolar TransistorsMeneghesso, G. / Neviani, A. / Parisotto, R. / Vendrame, L. et al. | 1996
- 453
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A Si-Ge HBT Technology for the Wireless MarketplaceAlhgren, D. C. / Sunderland, D. / Gilbert, M. M. / Greenberg, D. R. et al. | 1996
- 461
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Increased Current Gain and Reduced Emitter Resistance in SiGe HBTs by Fluorine or Chlorine Implantation into a Polysilicon Emitter ContactSchiz, J. / Moiseiwitsch, N. E. / Marsh, C. / Ashburn, P. et al. | 1996
- 465
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Fabrication and Electrical Characterization of Si/SiGe p-Channel MOSFETs with a Delta Doped Boron LayerRisch, L. / Fischer, H. / Hofmann, F. / Schaefer, H. et al. | 1996
- 469
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High-Frequency SiGe HBT's with Implanted EmittersNanver, L. K. / Goudena, E. J. G. / Visser, C. / Van Zeijl, H. W. et al. | 1996
- 473
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Experiments with 0.18m SiGe Channel pMOSFETs and P^+ Poly-SiGe GateBouillon, P. / Skotnicki, T. / Bodnar, S. / Morin, C. et al. | 1996
- 479
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Two-Dimensional Analytical Modelling of Subthreshold Region in Fully-Depleted SOI MOSFETsPidin, S. / Koyanagi, M. et al. | 1996
- 483
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A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit SimulationRobilliart, E. / Dubois, E. et al. | 1996
- 487
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Mixed-Mode Circuit Simulation with Full-Wave Analysis of InterconnectionsStopponi, G. / Roselli, L. / Ciampolini, P. et al. | 1996
- 491
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Analysis of S/D Engineering through Short Channel Effect and Hot Carrier Injection Behavior in a 0.35m CMOS TechnologyVandenbossche, E. / Delpech, P. / Revil, N. / Haond, M. et al. | 1996
- 495
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A Charge Based MOSFET Model for Low-Voltage Mixed Signal ApplicationsSchrom, G. / Stach, A. / Selberherr, S. et al. | 1996
- 499
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Measurement of Standard Deviation for Threshold Voltage Using Parallel-Connected MOSFETsTerada, K. / Mogami, T. et al. | 1996
- 505
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Advanced Architectures for 0.18-0.12m CMOS GenerationsSkotnicki, T. et al. | 1996
- 515
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Halo Doping for Good Performance and Reliability in 0.25 m CMOS TechnologyHendriks, M. / Badenes, G. / Deferm, L. et al. | 1996
- 519
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A Process for Strained Silicon n-Channel HMOSFETsClifton, P. A. / Routley, P. R. / Gurry, P. K. / O'Neill, A. G. et al. | 1996
- 523
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One Junction Approach to Make Deep Submicron PMOSFETs for Low Power ApplicationsKubicek, S. / Biesemans, S. / De Meyer, K. et al. | 1996
- 527
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Hybrid 90 GHz Rectenna Chip with CMOS PreamplifierHerrmann, M. / Beck, D. / Kasper, E. / Luy, J.-F. et al. | 1996
- 533
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A New Technological Process to Realise InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55mFang, R. Y. / Bertone, D. / Bricconi, A. / Greborio, L. et al. | 1996
- 537
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A New Concept for a Direct Optical Free-Space Interconnect without LensesHainberger, R. / Finger, N. / Golshani, A. / Koeck, A. et al. | 1996
- 541
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Single-Beam and Single-Mode Emission from Surface-Emitting Laser Diodes Based on Surface Mode EmissionKoeck, A. / Golshani, A. / Hainberger, R. / Gornik, E. et al. | 1996
- 545
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Superimposed Bragg Gratings on Semiconductor MaterialTalneau, A. / Charil, J. / Ougazzaden, A. et al. | 1996
- 549
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Theoretical Analysis of Microwave-Generation in Semiconductor Multiple Quantum Well StructuresBinder, E. / Preisser, D. / Kuhn, T. et al. | 1996
- 553
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A Novel GaAs Structure for Terahertz GeneratorsShiktorov, P. / Starikov, E. / Gruzinskis, V. / Reggiani, L. et al. | 1996
- 559
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2D Simulation of Velocity Overshoot in GaAs HBTManeux, C. / Labat, N. / Fouillat, P. / Touboul, A. et al. | 1996
- 563
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Experimental Study of Deep Levels in MESFETsMeneghesso, G. / Gasparetto, G. / Paccagnella, A. / Camin, D. V. et al. | 1996
- 567
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High Speed PIN Photodiodes for 10-20 Gbit/s High Sensitivity PhotoreceiversBlanconnier, P. / Giraudet, L. / Olivier-Martin, F. / Praseuth, J. P. et al. | 1996
- 571
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High Speed Three-Terminal Laser Modulation Using Electron Extraction Via Resonant-Tunneling StructureRyzhii, M. / Ryzhii, V. / Khmyrova, I. et al. | 1996
- 575
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Laser Induced Gratings and Hot-Carrier Dynamics in III-V SemiconductorsStarikov, E. / Shiktorov, P. / Gruzinskis, V. / Subacius, L. et al. | 1996
- 579
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EBIC Analysis of SiC Mesa DiodesJargelius, M. / Gustafsson, U. / Bakowski, M. et al. | 1996
- 583
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Optimization and Comparison of Losses in Si and 4H SiC 1kV Trench MOSFETsBakowski, M. / Gustafsson, U. et al. | 1996
- 587
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Strain Relaxation Due to Phosphorus Implantation into Strained Si/SiGe/Si HeterostructureSwain, P. K. / Misra, D. et al. | 1996
- 593
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A High Performance Single Poly 0.5m BiCMOS Technology Optimized for Mixed Signal ApplicationsDecoutere, S. / Cuthbertson, A. / Kuhn, R. / Vleugels, F. et al. | 1996
- 597
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High Performance 0.3m CMOS Technology Using I-Line LithographyMontree, A. H. / Gehoel-V.Ansem, W. / Huijten, L. H. M. / Juffermans, C. A. H. et al. | 1996
- 601
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Realisation of a 0.25m NMOS FET Using Ge~xSi~1~-~x (xSalm, C. / Schmitz, J. / Martens, M. C. / Gravesteijn, D. J. et al. | 1996
- 605
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Elevated Base Single-Poly Self-Aligned BJTs for Deep Submicron BiC-MOSGravier, T. / Maury, D. / Kirtsch, J. / Delpech, P. et al. | 1996
- 609
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Mechanical Stress in and Surrounding CoSi~2 and TiSi~2 LinesDe Wolf, I. / Howard, D. J. / Maex, K. / Maes, H. E. et al. | 1996
- 613
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A Triple-Well Architecture for Low Voltage Operation in Submicron CMOS DevicesAuricchio, C. / Bez, R. / Losavio, A. / Maurelli, A. et al. | 1996
- 617
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Effects of Fluorine Incorporation on the Characteristics of a Single Poly EEPROM CellCascella, A. / Dallalibera, G. / Ghidini, G. / Vajana, B. et al. | 1996
- 623
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Characterisation of Advanced LOCOS IsolationBazley, D. J. / Jones, S. K. / Beanland, R. / Scaife, B. et al. | 1996
- 627
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Plasma Assisted Chemical Vapor Deposition of Aluminum Thin Films for ULSI MetallizationKim, B.-Y. / Kim, D.-C. / Joo, S.-K. et al. | 1996
- 631
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Platinum Etching in an Inductively Coupled PlasmaPark, S.-G. / Lee, J. G. / Choi, Y. S. / Lee, S. H. et al. | 1996
- 635
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On-Wafer Calibration of Sol-Gel Derived Bulk Acoustic Wave DevicesAwang, Z. / Miles, R. E. / Milne, S. J. / Tu, Y. L. et al. | 1996
- 641
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A Dynamic Model for Multiterminal Bipolar Devices Used in Smart-Power ApplicationsSpeciale, N. / Leone, A. / Graffi, S. / Masetti, G. et al. | 1996
- 645
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Analysis of Leakage Currents in Smart Power DevicesKnaipp, M. / Simlinger, T. / Kanert, W. / Selberherr, S. et al. | 1996
- 649
-
A Stored Charge Model for Integrated Injection Logic (I^2L) Structures Using Si/SiGe MaterialWainwright, S. P. / Hall, S. / Ashburn, P. et al. | 1996
- 653
-
A New Method for Calculating the Propagation Delay in CML Bipolar SwitchingTinti, R. / De Graaf, H. C. / Klinkenberg, E. / Wassenaar, R. F. et al. | 1996
- 657
-
Characterization of Minority Carrier Concentration in the Base of npn SiGe HBTSokolic, S. / Amon, S. et al. | 1996
- 663
-
On the Use of a Genetic Algorithm for Millimeter-Wave FET ModelingMenozzi, R. / Piazzi, A. et al. | 1996
- 667
-
Influence of Mobility Degradation on Distortion Analysis in MOSFETsVan Langevelde, R. / Klaassen, F. M. et al. | 1996
- 671
-
Interconnect Geometric Parameters OptimizationDelorme, N. / Belleville, M. et al. | 1996
- 675
-
New Method for the Extraction of the Gate Voltage Dependence of the Series Resistance in CMOS TransistorsBrut, H. / Ghibaudo, G. / Juge, A. et al. | 1996
- 679
-
Closed-Form Frequency Dependent Gate-to-Channel Capacitance Model for Submicron MOSFETsKol'dyaev, V. I. / Clerix, A. / Deferm, L. et al. | 1996
- 685
-
An Experimental High Performance 16M DRAM Using Giga-Bit TechnologiesJeong, G.-T. / Cho, S.-H. / Kim, M.-J. / Shin, Y.-C. et al. | 1996
- 689
-
Characterization of Sputtered High Dielectric Constant Ba~0~.~5 Sr~0~.~5 TiO~3 Thin Films for DRAM ApplicationsSun, S. C. / Tsai, M. S. / Lin, P. / Lay, J. A. et al. | 1996
- 693
-
Double-Poly EEPROM Cell for High Density Memories Using Positive and Negative Voltage ProgrammingPio, F. / Paruzzi, P. / Baldi, L. / Riva, C. et al. | 1996
- 697
-
A Salicided Flash EEPROM Embedded Memory ApplicationMarangon, S. / Maurelli, A. / Moroni, M. / Baldi, L. et al. | 1996
- 701
-
Static CV-Characteristics of Fully Depleted NMOS Devices on SOIKerber, M. / Mahnkopf, R. / Schwalke, U. et al. | 1996
- 707
-
Microtransducer CADNathan, A. et al. | 1996
- 717
-
Micromachined Flow Sensors Using a Piezoresistive Cantilever PaddleSu, Y. / Evans, A. G. R. / Brunnschweiler, A. / Ensell, G. et al. | 1996
- 721
-
A Smart Resonant Sensor Fabricated by Si-MST for Online Vibration Control of Rotating MachineryScholz, D. / Peiner, E. / Schlachetzki, A. / Fritsch, H. et al. | 1996
- 725
-
Pendulum Type Accelerometers Based on Thick Polysilicon Surface MicromachiningRuiz, O. / Samitier, J. / Wenk, B. / Riethmueller, W. et al. | 1996
- 731
-
MOSFET Matching in a Deep Submicron TechnologyRoux dit Buisson, O. / Morin, G. et al. | 1996
- 735
-
Characterization and Modeling of Integrated Photosensors in Standard CMOS TechnologyBaureis, P. / Gerber, J. et al. | 1996
- 739
-
Materials and Devices for Si-Based OptoelectronicsCoffa, S. / Franzo, G. / Priolo, F. et al. | 1996
- 745
-
Influence of Real-Space Transfer on Transit Time and Noise in HEMT'sMateos, J. / Gonzalez, T. / Pardo, D. / Tadyszak, P. et al. | 1996
- 749
-
Facet Heating in High Power GaAlAs/GaAs Edge Emitting Laser DiodesMenzel, U. / Puchert, R. / Baerwolff, A. / Lau, A. et al. | 1996
- 753
-
Experimental Method to Extract A.C. Collector-Base Resistance from SiGe HBT'sHamel, J. S. / Alison, R. / Blaikie, R. et al. | 1996
- 759
-
Random Telegraph Signal in the Quasi-Breakdown Current of MOS CapacitorsBriere, O. / Chroboczek, J. A. / Ghibaudo, G. et al. | 1996
- 763
-
On the Polarity Dependence of Oxide Breakdown in MOS-Devices with n^+ and p^+ Polysilicon GateOgier, J.-L. / Degraeve, R. / Groeseneken, G. / Maes, H. E. et al. | 1996
- 767
-
Electric Field Dependence of Charge Build-up Mechanisms and Breakdown Phenomena in Thin Oxides during Fowler-Nordheim InjectionVincent, E. / Papadas, C. / Ghibaudo, G. et al. | 1996
- 773
-
Novel MSM-2DEG PD/HEMT Photoreceiver for 10GBit/s OperationHorstmann, M. / Muttersbach, J. / Van der Hart, A. / Schimpf, K. et al. | 1996
- 777
-
Use of Gain non-Linearities in Two-Terminal Edge-Coupled InGaAs/InP Heterojunction PhototransistorsVan De Casteele, J. / Vilcot, J. P. / Gouy, J. P. / Rolland, P. A. et al. | 1996
- 781
-
Low Temperature Dependence of the Device Parameters of Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche PhotodiodesAn, S. / Deen, M. J. / Tarof, L. et al. | 1996
- 787
-
On 1/f Noise in Polysilicon Emitter Bipolar Transistors: Coherence between Base Current Noise and Emitter Series Resistance NoiseMarkus, H. A. W. / Roche, P. / Kleinpenning, T. G. M. et al. | 1996
- 791
-
Localized Lifetime Control in Bipolar Silicon DevicesFallica, G. / Raineri, V. / Saggio, M. / Letor, R. et al. | 1996
- 795
-
Application of Silane-Only Selective Epitaxy to the Fabrication of Fully Self-Aligned Silicon Bipolar TransistorsBoussetta, H. / Gregory, H. J. / Bonar, J. M. / Ashburn, A. et al. | 1996
- 799
-
Large-Angle-Tilt-Implanted-Based (LATIB) for Walled-Emitter Bipolar TransistorsNiel, S. / Gravier, T. / Granier, A. / Grouillet, A. et al. | 1996
- 803
-
Optimisation of a Link Base Implant for Reducing the Access Base Resistance of Single-Poly Quasi Self-Aligned Bipolar TransistorsVendrame, L. / Gravier, T. / De Berranger, E. / Kirtsch, J. et al. | 1996
- 807
-
Self-Aligned Metal/IDP Si Bipolar Technology with 12-ps ECL and 45GHz Dynamic Frequency DividerWashio, K. / Ohue, E. / Tanabe, M. / Onai, T. et al. | 1996
- 813
-
Monte Carlo Simulation of Electron Transport in Si: the First 20 YearsFischetti, M. V. / Laux, S. E. et al. | 1996
- 821
-
Efficient Full Band Monte Carlo Hot Carrier Simulation for Silicon DevicesJungemann, C. / Yamaguchi, S. / Goto, H. et al. | 1996
- 825
-
Modeling Surface Scattering Effects in the Solution of the BTE Based on Spherical Harmonics ExpansionVecchi, M. C. / Greiner, A. / Rudan, M. et al. | 1996
- 829
-
Hot-Carrier Thermal Conductivity for Hydrodynamic AnalysesBrunetti, R. / Golinelli, P. / Reggiani, L. / Rudan, M. et al. | 1996
- 833
-
Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET'sPerron, L. / Lacaita, A. / Guzzetti, S. / Bez, R. et al. | 1996
- 839
-
Electromigration Failure in Thin-Film Conductors - A PerspectiveLloyd, J. R. et al. | 1996
- 847
-
Time-Domain Characterization of Lattice Heating in Power VDMOSFETs by Means of an Interferometric Laserprobe TechniqueSeliger, N. / Habas, P. / Gornik, E. et al. | 1996
- 851
-
Annealing of Stress-Induced Interface and Border Traps in MOS Devices: a Charge-Pumping StudyAutran, J.-L. / Flament, O. / Chabrerie, C. / Musseau, O. et al. | 1996
- 855
-
Kinetics of Hot-Carrier Degradation of Submicron n-Channel LDD MOSFET'sOkhonin, S. / Hessler, T. / Dutoit, M. et al. | 1996
- 859
-
New Findings on Hot Carrier Effects in Bulk Silicon MOSFETsSzelag, B. / Dutoit, M. / Balestra, F. et al. | 1996
- 865
-
High Performance 0.1m-Self-Aligned-Gate GaAs MESFET TechnologyNishimura, K. / Onodera, K. / Aoyama, S. / Tokumitsu, M. et al. | 1996
- 869
-
Reliable Complementary HIGFET Technology for High Speed/Low Power ApplicationsFawaz, H. / Thiery, J.-F. / Nuyen, L. / Delos, E. et al. | 1996
- 873
-
Current Transport in Double Heterojunction HEMTsBrech, H. / Simlinger, T. / Grave, T. / Selberherr, S. et al. | 1996
- 877
-
0.2m T-Gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown by LP-MOCVD Using an N2-CarrierSchimpf, K. / Hollfelder, M. / Horstmann, M. / Marso, M. et al. | 1996
- 881
-
Microwave Performance of HFETs on Metamorphic In~0~.~7Al~0~.~3As/In~0~.~8Ga~0~.~2As on GaAs SubstratesKarlsson, C. / Rorsman, N. / Wang, S. / Olsson, E. et al. | 1996
- 885
-
InAs/AlSb Dual-Gate HFETs with High Maximum Drain BiasBolognesi, C. R. / Dvorak, M. W. / Chow, D. H. et al. | 1996
- 891
-
Integration of Porous Silicon Interference Filters in Si-PhotodiodesKrueger, M. / Berger, M. G. / Marso, M. / Thoenissen, M. et al. | 1996
- 895
-
Array-like Metal-Resistance-Semiconductor Photodetectors: Characterization and ModellingZappa, F. / Lacaita, A. / Catuozzo, M. / Gotra, Y. et al. | 1996
- 899
-
Analysis of VOC in Soils with a Tin Oxide Multisensor SystemGetino, J. / Horrillo, M. C. / Gutierrez, J. / Ares, L. et al. | 1996
- 903
-
A Low Voltage Integrated Temperature SensorAlesii, F. / Faccio, M. / Ferri, G. / Poduti, C. et al. | 1996
- 907
-
A Capacitive Chemical Sensor Based on Porous SiliconSchoening, M. J. / Crott, M. / Ronkel, F. / Thust, M. et al. | 1996
- 913
-
New 3D Polycrystalline Model of Electromigration Induced Voiding at Interconnect ViasGhiti, A. / O'Neill, A. G. / Low, K. S. / Trattles, J. T. et al. | 1996
- 917
-
Improvements in the Electromigration Performance of an Aluminium-Copper Alloy Metallization by Optimization of the Copper DistributionFoley, S. / Martin, D. / Mathewson, A. et al. | 1996
- 921
-
Electrical and Thermal Local Effects Simulation for ElectromigrationBorgarino, M. / Castagnini, A. / De Munari, I. / Fantini, F. et al. | 1996
- 925
-
The Correlation Between ESD Robustness and Design Parameters in Submicron CMOS TechnologiesKwon, K. H. / Lee, K. H. / Park, K. S. / Lim, S. K. et al. | 1996
- 929
-
Electroluminescence Imaging for Defect Characterization in InP Based Optoelectronic DevicesNeitzert, H. C. / Cappa, V. / Massetti, S. et al. | 1996
- 935
-
Recent Advances and Trends in SOI CMOS TechnologyColinge, J. P. et al. | 1996
- 943
-
Selectively Grown Short Channel Vertical Si-p MOS Transistor for Future Three Dimensional Self-Aligned IntegrationBehammer, D. / Vescan, L. / Loo, R. / Moers, J. et al. | 1996
- 947
-
Analyses of Sub 1/4-m MOS-Transistors by Visible Light EmissionMueller, J. / Wirth, G. / Hilleringmann, U. / Goser, K. et al. | 1996
- 951
-
Photon Emission in Deep Submicron SOI MOSFETsRenn, S.-H. / Pelloie, J.-L. / Balestra, J. et al. | 1996
- 957
-
A Straightforward Noise de-Embedding Method and its Application to High-Speed Silicon Bipolar TransistorsAufinger, K. / Boeck, J. et al. | 1996
- 961
-
The 1/f Noise Behaviour of Interface Engineered Polysilicon Emitter Bipolar TransistorsSimoen, E. / Decoutere, S. / Cuthbertson, A. / Claeys, C. et al. | 1996
- 965
-
2-D Modelling of Electronic Noise in Semiconductor DevicesHoulet, P. / Bonani, F. / Ghione, G. / Varani, L. et al. | 1996
- 969
-
Neural Networks for Designing and Reverse Engineering BJTsFerguson, R. / Roulston, D. J. et al. | 1996
- 973
-
Analytical Theory of Gate-Induced Injection Barrier Modulation in Compensated CMOS-Compatible Bipolar TransistorsFreund, D. / Kostka, A. et al. | 1996
- 979
-
Hot-Carrier Degradation and Oxide Charge Build-up in Self-Aligned Etched-Polysilicon npn Bipolar TransistorsNeviani, A. / Pavan, P. / Tommasin, T. / Nardi, A. et al. | 1996
- 983
-
Effects of Non-Degenerately Doped Polysilicon on the Hot-Carrier Reliability of Tungsten Polycide Gate PMOSFETsLou, C. L. / Chim, W. K. / Chan, D. S. H. / Pan, Y. et al. | 1996
- 987
-
Hot-Carrier Reliability in n-MOSFETs Used as Pass-TransistorsGoguenheim, D. / Bravaix, A. / Vuillaume, D. / Varrot, M. et al. | 1996
- 991
-
Impact of Profiled LDD Structure on Hot Carrier Degradation of nMOSFETsPark, H.-S. / Kim, K.-S. / Park, S.-J. / Oh, S.-J. et al. | 1996
- 995
-
Optimization of the Reliability of 0.25m n-MOSFETsHessler, T. / Okhonin, S. / Dutoit, M. et al. | 1996
- 1001
-
Anomalous Impact-Ionization Gate Current in High Breakdown InP-Based HEMT'sMeneghesso, G. / Manfredi, M. / Pavesi, M. / Auer, U. et al. | 1996
- 1005
-
Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise Analysis to Detect Traps in HEMTsSaysset, N. / Labat, N. / Touboul, A. / Danto, Y. et al. | 1996
- 1009
-
Hot-Electron Degradation of the DC and Microwave Performance of InAlAs/InGaAs/InP HEMTsMenozzi, R. / Borgarino, M. / Baeyens, Y. / Van Hove, M. et al. | 1996
- 1013
-
Degradation of AlInAs HEMT Structures Induced by SiO~2 Mask Layer DepositionHaddab, Y. / Spicher, J. / Beck, M. et al. | 1996
- 1017
-
Impact of Gate Recess Offset on Pseudomorphic HEMT Performance: a Simulation StudyAsenov, A. / Babiker, S. / Cameron, N. / Taylor, M. R. S. et al. | 1996
- 1023
-
High-Performance a-Si:H TFT for Large-Area AMLCDsChen, C.-Y. / Kanicki, J. et al. | 1996
- 1033
-
The Recent Trends in a-Si:H Thin-Film Transistors TechnologyIbaraki, N. et al. | 1996
- 1041
-
Excimer Laser Annealing Technology for Poly-Si Thin-Film Transistors FabricationKuriyama, H. / Hamada, H. et al. | 1996
- 1051
-
Investigation of a-Si:H Density of States by Photo Induced DischargeMariucci, L. / Carluccio, R. / Massimiani, D. / Fortunato, G. et al. | 1996
- 1055
-
Investigation on the Kink Effect in Poly-TFTsValdinoci, M. / Colalongo, L. / Baccarani, G. / Fortunato, G. et al. | 1996
- 1059
-
A Low Temperature Process ( 600C) of Unhydrogenated in-situ Doped Polysilicon Thin Film Transistors for Active-Matrix ApplicationsPichon, L. / Raoult, F. / Mourgues, K. / Bonnaud, O. et al. | 1996
- 1063
-
Influence of Tunnel Effects on C-V Curves in Amorphous Silicon DevicesPellegrini, A. / Rudan, M. et al. | 1996
- 1067
-
Numerical Simulation of Transient Emission from Deep Level Traps in Polysilicon Thin Film TransistorsArmstrong, G. A. / Ayres, J. R. / Brotherton, S. D. et al. | 1996
- 1071
-
High Quality Polycristalline Thin Films Transistors Made by Excimer Laser CrystallisationLegagneux, P. / Petinot, F. / Huet, O. / Plais, F. et al. | 1996
- 1075
-
Excimer-Laser Crystallization of Silicon-GermaniumIshihara, R. / Ishikawa, K. / Matsumura, M. et al. | 1996
- 1807
-
All GaAs/AlGaAs Readout Circuit for Quantum-Well Infrared Detector Focal Plane ArrayUmansky, V. / Bunin, G. / Gartsman, K. / Sharman, C. et al. | 1997
- 1813
-
A New Charge Conserving Capacitance Model for GaAs MESFET'sNawaz, M. / Fjeldly, T. A. et al. | 1997
- 1822
-
Optimization of Pseudomorphic HEMT's Supported by Numerical SimulationsBrech, H. / Grave, T. / Simlinger, T. / Selberherr, S. et al. | 1997
- 1829
-
Operation of a Ballistic Heterojunction Permeable Base TransistorWernersson, L.-E. / Litwin, A. / Samuelson, L. / Xu, H. et al. | 1997
- 1837
-
Surface Passivation of GaAs MESFET'sCharache, G. W. / Akram, S. / Maby, E. W. / Bhat, I. B. et al. | 1997
- 1843
-
Monte Carlo Harmonic-Balance and Drift-Diffusion Harmonic-Balance Analyses of 100-600 GHz Schottky Barrier Varactor Frequency MultipliersLipsey, R. E. / Jones, S. H. / Jones, J. R. / Crowe, T. W. et al. | 1997
- 1851
-
Analytical Expressions for the Tunnel Current at Abrupt Semiconductor-Semiconductor HeterojunctionsSearle, S. / Pulfrey, D. L. / Kleckner, T. C. et al. | 1997
- 1857
-
A Silicon Micromachined Scanning Thermal Profiler with Integrated Elements for Sensing and ActuationGianchandani, Y. B. / Najafi, K. et al. | 1997
- 1869
-
A Low Driving Voltage CCD with Single Layer Electrode Structure for Area Image SensorTanaka, N. / Nakamura, N. / Matsunaga, Y. / Manabe, S. et al. | 1997
- 1875
-
A Low-Voltage Tunneling-Based Silicon MicroaccelerometerYeh, C. / Najafi, K. et al. | 1997
- 1883
-
Analytical Noise Model with the Influence of Shot Noise Induced by the Gate Leakage Current for Submicrometer Gate-Length High-Electron-Mobility TransistorsShin, D.-S. / Lee, J. B. / Min, H. S. / Oh, J.-E. et al. | 1997
- 1888
-
A Standby Current Limited Performance Figure of Merit for Deep Sub-Micron CMOSChapman, R. A. / Holloway, T. C. / McNeil, V. M. / Chatterjee, A. et al. | 1997
- 1896
-
An Analytical Drain Current Model for Submicrometer and Deep Submicrometer MOSFET'sJang, S.-L. / Hu, M.-C. et al. | 1997
- 1903
-
Tantalum-Gate Thin-Film SOI nMOS and pMOS for Low-Power ApplicationsShimada, H. / Hirano, Y. / Ushiki, T. / Ino, K. et al. | 1997
- 1908
-
A Unified Approach to Profiling the Lateral Distributions of Both Oxide Charge and Interface States in n-MOSFET's Under Various Bias Stress ConditionsCheng, S.-M. / Yih, C.-M. / Yeh, J.-C. / Kuo, S.-N. et al. | 1997
- 1915
-
Effects of the Inversion Layer Centroid on MOSFET BehaviorLopez-Villanueva, J. A. / Cartujo-Casinello, P. / Banqueri, J. / Gamiz, F. et al. | 1997
- 1923
-
Characteristics of SOI FET's Under Pulsed ConditionsJenkins, K. A. / Sun, J. Y.-C. / Gautier, J. et al. | 1997
- 1931
-
Physics and Numerical Simulation of Single Photon Avalanche DiodesSpinelli, A. / Lacaita, A. L. et al. | 1997
- 1951
-
Predicting CMOS Speed with Gate Oxide and Voltage Scaling and Interconnect Loading EffectsChen, K. / Hu, C. / Fang, P. / Lin, M. R. et al. | 1997
- 1958
-
Low-Temperature Annealing of Polycrystalline Si~1~-~xGe~x After Dopant ImplantationJin, Z. / Gururaj, B. A. / Yeung, M. W. Y. / Kwok, H. S. et al. | 1997
- 1965
-
Use of Gas as Low-k Interlayer Dielectric in LSI's: Demonstration of FeasibilityAnand, M. B. / Yamada, M. / Shibata, H. et al. | 1997
- 1972
-
Grounded-Gate nMOS Transistor Behavior Under CDM ESD Stress ConditionsVerhaege, K. / Russ, C. / Luchies, J.-M. / Groeseneken, G. et al. | 1997
- 1981
-
A SOI-RF-CMOS Technology on High Resistivity SIMOX Substrates for Microwave Applications to 5 GHzEggert, D. / Huebler, P. / Huerrich, A. / Kueck, H. et al. | 1997
- 1990
-
Optimal Current for Minimum Thermal Noise Operation of Submicrometer MOS TransistorsTriantis, D. P. / Birbas, A. N. et al. | 1997
- 1996
-
Degradation Mechanism in Carbon-Doped GaAs Minority-Carrier Injection DevicesFushimi, H. / Wada, K. et al. | 1997
- 2002
-
Spiral Junction TerminationKrizaj, D. / Amon, S. / Mingues, C. / Charitat, G. et al. | 1997
- 2011
-
Dielectrically Isolated Lateral Merged PiN Schottky (LMPS) DiodesSunkavalli, R. / Baliga, B. J. / Tamba, A. et al. | 1997
- 2017
-
SIMFCT: A MOS-Gated FCT with High Voltage-Current SaturationSridhar, S. / Baliga, B. J. et al. | 1997
- 2022
-
Design of a Low-Voltage, Axially Modulated, Cusp-Injected, Third Harmonic, X-Band Gyrotron Amplifier ExperimentLiu, A. / Lawson, W. / Fernandez, A. / Rodgers, J. et al. | 1997
- 2029
-
Improving Breakdown Voltage of SiC/Si Heterojunction with Graded Structure by Rapid Thermal CVD TechnologyHwang, J. D. / Fang, Y. K. / Wu, K. H. / Chou, S. M. et al. | 1997
- 2031
-
Abrupt Negative Differential Resistance in Ungated GaAs FET'sAhmed, M. M. et al. | 1997
- 2033
-
Approximation of the Length of Velocity Saturation Region in MOSFET'sWong, H. / Poon, M. C. et al. | 1997
- 2036
-
Electrical Characteristics of Poly-Si TFT's with Smooth Surface Roughness at Oxide/Poly-Si InterfaceMin, B.-H. / Park, C.-M. / Han, M.-K. et al. | 1997
- 2038
-
High-Frequency Small-Signal and Large-Signal Characteristics of Resonant Tunneling High Electron Mobility Transistors (RTHEMT's)Chen, K. J. / Maezawa, K. / Yamamoto, M. et al. | 1997
- 2041
-
Fabrication of N^+-N Iso-Type Diodes with LPCVD-Grown Polysilicon on Silicon StructuresMohajerzadeh, S. / Selvakumar, C. R. et al. | 1997
- 2044
-
Effect of Gate-Field Dependent Mobility Degradation on Distortion Analysis in MOSFET'sVan Langevelde, R. / Klaassen, F. M. et al. | 1997
- 2053
-
A Hot-Carrier Degradation Mechanism and Electrical Characteristics in S~4D n-MOSFET'sYoshitomi, T. / Saito, M. / Ohguro, T. / Ono, M. et al. | 1997
- 2064
-
A High Performance 16 Mb DRAM Using Giga-Bit TechnologiesJeong, G.-T. / Lee, K.-C. / Ha, D.-W. / Lee, K.-H. et al. | 1997
- 2070
-
EXTIGATE: The Ultimate Process Architecture for Submicron CMOS TechnologiesSchwalke, U. / Kerber, M. / Koller, K. / Jacobs, H. J. et al. | 1997
- 2083
-
Modeling of Light-Addressable Potentiometric SensorsColalongo, L. / Verzellesi, G. / Passeri, D. / Lui, A. et al. | 1997
- 2091
-
A 30-GHz fT Quasi-Self-Aligned Single-Poly Bipolar TechnologyDe Pontcharra, J. / Behouche, E. / Ailloud, L. / Thomas, D. et al. | 1997
- 2106
-
Investigation on Anomalous Leakage Currents in Poly-TFT's Including Dynamic EffectsColalongo, L. / Valdinoci, M. / Baccarani, G. et al. | 1997
- a3
-
Addendum| 1996
- ix
-
Scientific Programme Committees| 1996
- viii
-
Committees| 1996
- xi
-
Sponsors| 1996
- xii
-
Sessions| 1996
-
Technical Contents| 1996