Investigation on Anomalous Leakage Currents in Poly-TFT's Including Dynamic Effects (Englisch)

In: European solid state device research   ,  11  ;  2106-2112  ;  1997

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[Front cover]
| 1996
3
Challenges of Innovation in Microelectronics and Cooperation of Industrial and Nonindustrial R&D
Wieder, A. W. | 1996
23
Micro- and Opto-electronics Technologies towards the Multimedia Era
Ikegami, T. | 1996
31
Passivation of Ag on SiO~2 by annealing Ag-Ti alloys in an Ammonia ambient
Adams, D. / Alford, T. L. / Laursen, T. / Mayer, J. W. | 1996
39
Development in Electronic Systems is Impacted both by Semiconductor Technology and IC Assembly Techniques
Murari, B. | 1996
45
Recent Advances and Future Trends of ULSI Technologies
Iwai, H. | 1996
53
Quantum Cascade Lasers: New light sources for the Mid-To-Far-Infrared
Capasso, F. / Faist, J. / Sirtori, C. | 1996
65
Hot Carrier Reliability of S^4D n-MOSFETs
Yoshitomi, T. / Saito, M. / Ohguro, T. / Ono, M. | 1996
69
Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFETs
Hwang, H. / Lee, D.-H. / Hwang, J. M. | 1996
73
A New Charge Pumping Method for Studying the Si-SiO~2 Interface
Maneglia, Y. / Bauza, D. / Ghibaudo, G. | 1996
79
The Influence of Impurity Scattering in Highly Doped SOI-MOSFETs
Reichert, G. / Ouisse, T. / Pelloie, J. L. / Cristoloveanu, S. | 1996
83
Influence of the Silicon Thickness on the Reverse Short Channel Effect in SOI MOSFETs
Tsoukalas, D. / Kouvatsos, D. / Tsoi, E. / Revva, P. | 1996
87
Impact of Latch Phenomenon on Low Frequency Noise in SOI MOSFETS
Jomaah, J. / Dixkens, D. / Pelloie, J. L. / Raynaud, C. | 1996
93
Advanced Ti Salicide Process for sub-0.2 �m CMOS
Rostoll, M.-L. / Maury, D. / Regolini, J.-L. / Haond, M. | 1996
97
Interconnects Integration for 0.25 �m CMOS Technology
Morand, Y. / Lerme, M. / Gobil, Y. / Vinet, F. | 1996
101
Low Dielectric Constant Spin-on-Polymers for Interlayer Dielectric Applications
Sun, S. C. / Chuang, Y. C. | 1996
107
Passive Microwave Antennas Based on Silicon Surface Oriented P-I-N Structure and Ferroelectric Ceramics
Koshevaya, S. / Kotsarenko, N. / Gutierrez, E. / Grimalsky, V. | 1996
111
Sensitivity and Noise of MOS Magnetic Field Effect Transistors
Killat, D. / Umbach, F. / Kluge, J. V. / Schmitz, R. | 1996
115
Review Paper - RADFETs for Improved Radiation Sensitivity
O'Connel, B. / Lane, W. / Kelleher, A. / Adams, L. | 1996
121
Non-Volatile Memories: Issues, Challenges and Trends for the 2000's Scenario
Crisenza, G. / Annunziata, R. / Camerlenghi, E. / Cappelletti, P. | 1996
131
Subthreshold Source-Side Injection (S^3I): a Promising Programming Mechanism for Scaled-Down, Low-Power Flash Memories
Van Houdt, J. / De Blauwe, J. / Wellekens, D. / Haspeslagh, L. | 1996
135
Non-Volatile EEPROM Cells for Analog Circuit Calibration
Lanzoni, M. / Tondi, G. / Galbiati, P. / Ricco, B. | 1996
139
Comparison of the Suitability of Varius Programming Mechanisms Used for Multilevel Non-Volatile Information Storage
Montanari, D. / Van Houdt, J. / Wellekens, D. / Hendrickx, P. | 1996
145
Physical Models for 2D Numerical Simulation of New Titanium SALICIDE Processes
Fornara, P. / Touret, O. / Poncet, A. | 1996
149
Influence of the Silicon Nitride Oxidation on the Performance of NCLAD Isolation
Tixier, A. / Senez, V. / Baccus, B. / Marmiroli, A. | 1996
153
Diffusion of Boron in Polycrystalline Silicon
Nedelec, S. / Mathiot, D. / Gauneau, M. | 1996
157
A Transient Activation Model for Phosphorus after sub-Amorphizing Channeling Implants
Puchner, H. / Neary, P. / Aronowitz, S. / Selberherr, S. | 1996
161
Optimization of Poly-Emitter Technologies in a BiCMOS Environment Using Advanced Physical Modeling
Hoefler, A. / Feudel, T. / Gull, R. / Strecker, N. | 1996
165
Domain Decomposition Method Applied to 3D Finite Element Process Simulation
Herbaux, J. / Brocard, D. / Baccus, B. / Senez, V. | 1996
171
Electrical and Morphological Characterization of Sub-Micron Silicon Devices
Spinella, C. | 1996
179
Shallow Trench Isolation for sub 1/4 micron CMOS Technologies
Sallagoity, P. / Paoli, M. / Haond, M. | 1996
183
Shallow Trench Isolation for High Density Flash Memories
Deleonibus, S. / Heitzmann, M. / Gobil, Y. / Martin, F. | 1996
187
The Stress-Induced Voids Formation in the Polysilicon Film During Poly-Buffered Local Oxidation of Silicon : Characterisation and Model
Colpani, P. / Rebora, A. / Pavia, G. / Queirolo, G. | 1996
193
Poly Encapsulated LOCOS Lateral Isolation for 0.25 �m CMOS
Badenes, G. / Rooyackers, R. / Deferm, L. | 1996
199
Analysis of Micropump Operation Using HDL-A Macromodels
Voigt, P. / Wachutka, G. | 1996
203
A Complete Simulation System for Active Matrix Flat Panel Displays
Rollins, J. G. / Scrobohaci, P. / Durbeck, D. | 1996
207
Dynamic Behavior of a-Si Devices for Flat-Panel Displays
Colalongo, L. / Valdinoci, M. / Pellegrini, A. / Rudan, M. | 1996
211
Light-Addressable Potentiometric Sensors - Model and Experiments
Colalongo, L. / Verzellesi, G. / Passeri, D. / Lui, A. | 1996
215
Micromechanical Gas Heat Capacity Sensor
Frolov, G. A. / Grudin, O. M. / Katsan, I. I. / Lupina, B. I. | 1996
221
Investigation of Hole and Electron Back Injected Tunneling Currents in a Poly-Silicon Emitter Complementary Bipolar Technology
Bashir, R. / Hebert, F. / Basile, D. / Su, D. | 1996
225
Ge^+ Dose Dependence of Electrical Characteristics in Germanium Ion-Implanted Polycrystalline Silicon Films
Kang, M.-K. / Matsui, T. / Wada, K. / Kuwano, H. | 1996
229
Low Temperature Polycrystalline Silicon Thin Film Transistors Having Titanium Disilicide Source and Drain Contacts
Chang, S.-K. / Kim, O. | 1996
233
Hot Carrier Reliability Characteristics of Ultra Short Channel CMOSFETs
Hwang, H. | 1996
237
Determination of the Generation Lifetime in Si/SiGe/Si Epitaxial Layer Stacks Grown by MBE and LPCVD Using non Equilibrium Simultaneous HF/LF MOS CV Measurements
Sorge, R. / Heinemann, B. / Zeindl, H. P. / Lippert, G. | 1996
241
Inversion Layer Injection Devices - a New Class of Semiconductor Devices
Udrea, F. / Amaratunga, G. A. J. / Humphrey, J. / Clark, J. | 1996
245
MIS Auger Transistor
Ostroumova, E. V. / Rogachev, A. A. | 1996
249
3D Analysis of a Shallow Trench Isolated 0.25/0.25 �m NMOS Transistor
Sallagoity, P. / Vincent, G. / Poncet, A. | 1996
253
Characterization and Matching Analysis of 50 nm-NMOS-Transistors
Horstmann, J. T. / Hilleringmann, U. / Goser, K. | 1996
259
Optimization of Hetero-FET Alloy Composition for Low Noise Applications in Millimeter-Wave Frequency Range
Abou-Elnour, A. / Schuenemann, K. | 1996
263
Modelling of Gate Currents in MOSFETs Operating at Low Drain Voltages
Chang, M. Y. / Dyke, D. W. / Leung, C. C. C. / Childs, P. A. | 1996
267
Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation
Godignon, P. / Morvan, E. / Montserrat, J. / Jorda, X. | 1996
271
An Analytical Model for Hot-Carrier-Induced Degradation of Submicron n-MOSFET
Bouchakour, R. / Hardy, L. / Jourdain, M. | 1996
275
Refined Analytical Model of Combined Thermionic Emission and Drift-Diffusion Current Flow through Schottky Structure
Racko, J. / Donoval, D. / Wachutka, G. | 1996
279
Investigation of Thermally Generated Leakage Currents in Silicon pn-Junctions by Means of 2D-Device Simulations
Waschul, S. / Kampmann, A. / Laur, R. | 1996
283
Improved Description of GAA (Gate-All-Around) MOSFET I-V Characteristics
Jurczak, M. / Jakubowski, A. | 1996
287
An Efficient Numerical Approach to the Physics-Based Sensitivity Analysis of Bipolar Semiconductor Devices
Donati Guerrieri, S. / Bonani, F. / Pirola, M. / Ghione, G. | 1996
291
2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)
Udrea, F. / Amaratunga, G. A. J. | 1996
295
Hydrodynamic Modeling of Transport and Noise Spectra in n^+nn^+ Semiconductor Structures
Reggiani, L. / Shiktorov, P. / Gruzinskis, V. / Starikov, E. | 1996
299
Modelling of Insulated Gate Bipolar Transistors with Buffer-Layers
Brunner, H. / Kapels, H. / Porst, A. / Silber, D. | 1996
303
Electrical Modelling of Silicide Ohmic Contacts for MOS Devices
Reeves, G. K. / Holland, A. S. / Harrison, H. B. / Leech, P. W. | 1996
307
All Silicon Phase-Amplitude Integrated Optical Modulator Based on a BMFET Structure
Breglio, G. / Cutolo, A. / Iodice, M. / Spirito, P. | 1996
313
The Observation of Gate Length Dependence of GIDL in n-MOSFETs
Son, J. / Huh, K. / Lee, S. / Hwang, J. | 1996
317
EXTIGATE: the Ultimate Process Architecture for sub-0.25 �m CMOS Technologies
Schwalke, U. / Kerber, M. / Koller, K. / Jacobs, H. | 1996
321
Channel Engineering Using RP-CVD Epitaxy for High Performance CMOS Transistors
Risch, L. / Schaefer, H. / Lustig, B. / Hofmann, F. | 1996
325
Comparative Study of Surface and Buried Channel 0.25 �m pMOSFETs
Guegan, G. / Lerme, M. / Ada-Hanifi, M. / Moi, D. | 1996
329
Design and Characterisation of High-Performance 0.13�m NMOS Devices
Schmitz, J. / Paulzen, G. M. / Gravesteijn, D. J. / Montree, A. H. | 1996
335
Multi-Dimensional Process Simulation Software Integration in PROMPT
Fichtner, W. / Regli, P. | 1996
343
Level Set Methods for Surface Advancement in Lithography, Etching and Deposition
Adalsteinsson, D. / Sethian, J. A. | 1996
347
Rigorous Three-Dimensional Photolithography Simulation over Nonplanar Structures
Kirchauer, H. / Selberherr, S. | 1996
351
3-D Adaptive Simulation of Thermal Oxidation Process
Yoon, S. H. / Lee, J. H. / Won, T. Y. / Cho, B. J. | 1996
357
Plasma Doped (PLAD) Deep sub-halfmicron Buried Channel PMOSFETS and its Application to next Generation ULSI Circuits
Ahmad, A. / Prall, K. / Chapek, D. L. / Thakur, R. P. S. | 1996
361
Study of DC Stress Induced Leakage Current (SILC) and its Dependence on Oxide Nitridation
De Blauwe, J. / Degraeve, R. / Bellens, R. / Van Houdt, J. | 1996
365
Enhanced Hole Trapping in MOS Devices Damaged by Plasma-Induced Charging
Brozek, T. / Chan, Y. D. / Viswanathan, C. R. | 1996
369
Optimization of Nitridation Conditions for High Quality inter-Polysilicon Dielectric Layers
Klootwijk, J. H. / Bergveld, H. J. / Van Kranenburg, H. / Woerlee, P. H. | 1996
373
A Plasma NH~3 Process to Improve the Reliability of 0.35 �m p^+ Poly-Gate Nitrided Oxide p-MOSFET's
Bravaix, A. / Goguenheim, D. / Vuillaume, D. / Thirion, V. | 1996
379
A Novel High-Sensitivity Photodetector with SOI MOS Structure
Yamamoto, H. / Taniguchi, K. / Hamaguchi, C. | 1996
383
A 4.2K CMOS-Compatible Wide-Spectrum Detector
Gutierrez, E. A. / Koshevaya, S. V. / Deen, M. J. | 1996
387
A New Measurement Method of Interface-State Parameters, Based on Dark Current Characterization in CCDs
Toren, W. J. / Bisschop, J. / Widdershoven, F. P. | 1996
391
Combined Opto-Electronical Simulation of Metal-Semiconductor-Metal (MSM) Photodetectors
Koerner, T. O. / Krumbein, U. / Bomholt, L. H. / Fichtner, W. | 1996
397
Study and Optimization of Bipolar Power Transistors Using Mixed-Mode Simulations
Schligtenhorst, H. / Hurkx, G. A. M. / Notley, R. / Huang, E. | 1996
401
Gettering Mechanisms and Optimized Lifetime Control in Pt-Doped Silicon Power Devices
Coffa, S. / Camalleri, C. M. / Franco, G. / La Rocca, R. | 1996
405
A Highly Efficient 1.9-GHz Si High Power MOSFET
Yoshida, I. / Katsueda, M. / Maruyama, Y. / Kohjiro, I. | 1996
411
Electron Velocity Overshoot in Strained Si/Si~1~-~xGe~x MOSFETs
Gamiz, F. / Lopez-Villanueva, J. A. / Roldan, J. B. / Carceller, J. E. | 1996
415
Leakage Current in Polysilicon TFTs: Experiments and Interpretation
Colalongo, L. / Valdinoci, M. / Baccarani, G. / Migliorato, P. | 1996
419
Anomalous Low-Frequency C-V Behaviour in Polysilicon TFTs
Pellegrini, A. / Rudan, M. / Migliorato, P. | 1996
425
A 30GHz f~T Quasi Self-Aligned Single Poly Emitter Bipolar Technology
De Pontcharra, J. / Behouche, E. / Ailloud, L. / Thomas, D. | 1996
429
A 0.2 �m Emitter Bipolar Technology for Low Cost and High Performance Mixed Analog/Digital Applications
Miwa, H. / Ammo, H. / Kato, K. / Ejiri, H. | 1996
433
Performance Improvement in a 200mm BiCMOS Technology by Si/SiGe Heterojunction Bipolar Transistor Integration
De Berranger, E. / Bodnar, S. / Chantre, A. / Kirtsch, J. | 1996
439
Bias Stress Stability of C-Doped AlGaAs/GaAs HBTs
Sheng, H. / Cattani, L. / Amin, F. / Rezazadeh, A. A. | 1996
443
Low-Frequency Noise in Ga~xIn~xP/GaAs Heterojunction Bipolar Transistors
Markus, H. A. W. / Kleinpenning, T. G. M. | 1996
447
Measurement of the Electron Ionization Coefficient Temperature Dependence in InGaAs-Based Heterojunction Bipolar Transistors
Meneghesso, G. / Neviani, A. / Parisotto, R. / Vendrame, L. | 1996
453
A Si-Ge HBT Technology for the Wireless Marketplace
Alhgren, D. C. / Sunderland, D. / Gilbert, M. M. / Greenberg, D. R. | 1996
461
Increased Current Gain and Reduced Emitter Resistance in SiGe HBTs by Fluorine or Chlorine Implantation into a Polysilicon Emitter Contact
Schiz, J. / Moiseiwitsch, N. E. / Marsh, C. / Ashburn, P. | 1996
465
Fabrication and Electrical Characterization of Si/SiGe p-Channel MOSFETs with a Delta Doped Boron Layer
Risch, L. / Fischer, H. / Hofmann, F. / Schaefer, H. | 1996
469
High-Frequency SiGe HBT's with Implanted Emitters
Nanver, L. K. / Goudena, E. J. G. / Visser, C. / Van Zeijl, H. W. | 1996
473
Experiments with 0.18�m SiGe Channel pMOSFETs and P^+ Poly-SiGe Gate
Bouillon, P. / Skotnicki, T. / Bodnar, S. / Morin, C. | 1996
479
Two-Dimensional Analytical Modelling of Subthreshold Region in Fully-Depleted SOI MOSFETs
Pidin, S. / Koyanagi, M. | 1996
483
A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit Simulation
Robilliart, E. / Dubois, E. | 1996
487
Mixed-Mode Circuit Simulation with Full-Wave Analysis of Interconnections
Stopponi, G. / Roselli, L. / Ciampolini, P. | 1996
491
Analysis of S/D Engineering through Short Channel Effect and Hot Carrier Injection Behavior in a 0.35�m CMOS Technology
Vandenbossche, E. / Delpech, P. / Revil, N. / Haond, M. | 1996
495
A Charge Based MOSFET Model for Low-Voltage Mixed Signal Applications
Schrom, G. / Stach, A. / Selberherr, S. | 1996
499
Measurement of Standard Deviation for Threshold Voltage Using Parallel-Connected MOSFETs
Terada, K. / Mogami, T. | 1996
505
Advanced Architectures for 0.18-0.12�m CMOS Generations
Skotnicki, T. | 1996
515
Halo Doping for Good Performance and Reliability in 0.25 �m CMOS Technology
Hendriks, M. / Badenes, G. / Deferm, L. | 1996
519
A Process for Strained Silicon n-Channel HMOSFETs
Clifton, P. A. / Routley, P. R. / Gurry, P. K. / O'Neill, A. G. | 1996
523
One Junction Approach to Make Deep Submicron PMOSFETs for Low Power Applications
Kubicek, S. / Biesemans, S. / De Meyer, K. | 1996
527
Hybrid 90 GHz Rectenna Chip with CMOS Preamplifier
Herrmann, M. / Beck, D. / Kasper, E. / Luy, J.-F. | 1996
533
A New Technological Process to Realise InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55�m
Fang, R. Y. / Bertone, D. / Bricconi, A. / Greborio, L. | 1996
537
A New Concept for a Direct Optical Free-Space Interconnect without Lenses
Hainberger, R. / Finger, N. / Golshani, A. / Koeck, A. | 1996
541
Single-Beam and Single-Mode Emission from Surface-Emitting Laser Diodes Based on Surface Mode Emission
Koeck, A. / Golshani, A. / Hainberger, R. / Gornik, E. | 1996
545
Superimposed Bragg Gratings on Semiconductor Material
Talneau, A. / Charil, J. / Ougazzaden, A. | 1996
549
Theoretical Analysis of Microwave-Generation in Semiconductor Multiple Quantum Well Structures
Binder, E. / Preisser, D. / Kuhn, T. | 1996
553
A Novel GaAs Structure for Terahertz Generators
Shiktorov, P. / Starikov, E. / Gruzinskis, V. / Reggiani, L. | 1996
559
2D Simulation of Velocity Overshoot in GaAs HBT
Maneux, C. / Labat, N. / Fouillat, P. / Touboul, A. | 1996
563
Experimental Study of Deep Levels in MESFETs
Meneghesso, G. / Gasparetto, G. / Paccagnella, A. / Camin, D. V. | 1996
567
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Blanconnier, P. / Giraudet, L. / Olivier-Martin, F. / Praseuth, J. P. | 1996
571
High Speed Three-Terminal Laser Modulation Using Electron Extraction Via Resonant-Tunneling Structure
Ryzhii, M. / Ryzhii, V. / Khmyrova, I. | 1996
575
Laser Induced Gratings and Hot-Carrier Dynamics in III-V Semiconductors
Starikov, E. / Shiktorov, P. / Gruzinskis, V. / Subacius, L. | 1996
579
EBIC Analysis of SiC Mesa Diodes
Jargelius, M. / Gustafsson, U. / Bakowski, M. | 1996
583
Optimization and Comparison of Losses in Si and 4H SiC 1kV Trench MOSFETs
Bakowski, M. / Gustafsson, U. | 1996
587
Strain Relaxation Due to Phosphorus Implantation into Strained Si/SiGe/Si Heterostructure
Swain, P. K. / Misra, D. | 1996
593
A High Performance Single Poly 0.5�m BiCMOS Technology Optimized for Mixed Signal Applications
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597
High Performance 0.3�m CMOS Technology Using I-Line Lithography
Montree, A. H. / Gehoel-V.Ansem, W. / Huijten, L. H. M. / Juffermans, C. A. H. | 1996
601
Realisation of a 0.25�m NMOS FET Using Ge~xSi~1~-~x (x
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605
Elevated Base Single-Poly Self-Aligned BJTs for Deep Submicron BiC-MOS
Gravier, T. / Maury, D. / Kirtsch, J. / Delpech, P. | 1996
609
Mechanical Stress in and Surrounding CoSi~2 and TiSi~2 Lines
De Wolf, I. / Howard, D. J. / Maex, K. / Maes, H. E. | 1996
613
A Triple-Well Architecture for Low Voltage Operation in Submicron CMOS Devices
Auricchio, C. / Bez, R. / Losavio, A. / Maurelli, A. | 1996
617
Effects of Fluorine Incorporation on the Characteristics of a Single Poly EEPROM Cell
Cascella, A. / Dallalibera, G. / Ghidini, G. / Vajana, B. | 1996
623
Characterisation of Advanced LOCOS Isolation
Bazley, D. J. / Jones, S. K. / Beanland, R. / Scaife, B. | 1996
627
Plasma Assisted Chemical Vapor Deposition of Aluminum Thin Films for ULSI Metallization
Kim, B.-Y. / Kim, D.-C. / Joo, S.-K. | 1996
631
Platinum Etching in an Inductively Coupled Plasma
Park, S.-G. / Lee, J. G. / Choi, Y. S. / Lee, S. H. | 1996
635
On-Wafer Calibration of Sol-Gel Derived Bulk Acoustic Wave Devices
Awang, Z. / Miles, R. E. / Milne, S. J. / Tu, Y. L. | 1996
641
A Dynamic Model for Multiterminal Bipolar Devices Used in Smart-Power Applications
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645
Analysis of Leakage Currents in Smart Power Devices
Knaipp, M. / Simlinger, T. / Kanert, W. / Selberherr, S. | 1996
649
A Stored Charge Model for Integrated Injection Logic (I^2L) Structures Using Si/SiGe Material
Wainwright, S. P. / Hall, S. / Ashburn, P. | 1996
653
A New Method for Calculating the Propagation Delay in CML Bipolar Switching
Tinti, R. / De Graaf, H. C. / Klinkenberg, E. / Wassenaar, R. F. | 1996
657
Characterization of Minority Carrier Concentration in the Base of npn SiGe HBT
Sokolic, S. / Amon, S. | 1996
663
On the Use of a Genetic Algorithm for Millimeter-Wave FET Modeling
Menozzi, R. / Piazzi, A. | 1996
667
Influence of Mobility Degradation on Distortion Analysis in MOSFETs
Van Langevelde, R. / Klaassen, F. M. | 1996
671
Interconnect Geometric Parameters Optimization
Delorme, N. / Belleville, M. | 1996
675
New Method for the Extraction of the Gate Voltage Dependence of the Series Resistance in CMOS Transistors
Brut, H. / Ghibaudo, G. / Juge, A. | 1996
679
Closed-Form Frequency Dependent Gate-to-Channel Capacitance Model for Submicron MOSFETs
Kol'dyaev, V. I. / Clerix, A. / Deferm, L. | 1996
685
An Experimental High Performance 16M DRAM Using Giga-Bit Technologies
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689
Characterization of Sputtered High Dielectric Constant Ba~0~.~5 Sr~0~.~5 TiO~3 Thin Films for DRAM Applications
Sun, S. C. / Tsai, M. S. / Lin, P. / Lay, J. A. | 1996
693
Double-Poly EEPROM Cell for High Density Memories Using Positive and Negative Voltage Programming
Pio, F. / Paruzzi, P. / Baldi, L. / Riva, C. | 1996
697
A Salicided Flash EEPROM Embedded Memory Application
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701
Static CV-Characteristics of Fully Depleted NMOS Devices on SOI
Kerber, M. / Mahnkopf, R. / Schwalke, U. | 1996
707
Microtransducer CAD
Nathan, A. | 1996
717
Micromachined Flow Sensors Using a Piezoresistive Cantilever Paddle
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721
A Smart Resonant Sensor Fabricated by Si-MST for Online Vibration Control of Rotating Machinery
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725
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Ruiz, O. / Samitier, J. / Wenk, B. / Riethmueller, W. | 1996
731
MOSFET Matching in a Deep Submicron Technology
Roux dit Buisson, O. / Morin, G. | 1996
735
Characterization and Modeling of Integrated Photosensors in Standard CMOS Technology
Baureis, P. / Gerber, J. | 1996
739
Materials and Devices for Si-Based Optoelectronics
Coffa, S. / Franzo, G. / Priolo, F. | 1996
745
Influence of Real-Space Transfer on Transit Time and Noise in HEMT's
Mateos, J. / Gonzalez, T. / Pardo, D. / Tadyszak, P. | 1996
749
Facet Heating in High Power GaAlAs/GaAs Edge Emitting Laser Diodes
Menzel, U. / Puchert, R. / Baerwolff, A. / Lau, A. | 1996
753
Experimental Method to Extract A.C. Collector-Base Resistance from SiGe HBT's
Hamel, J. S. / Alison, R. / Blaikie, R. | 1996
759
Random Telegraph Signal in the Quasi-Breakdown Current of MOS Capacitors
Briere, O. / Chroboczek, J. A. / Ghibaudo, G. | 1996
763
On the Polarity Dependence of Oxide Breakdown in MOS-Devices with n^+ and p^+ Polysilicon Gate
Ogier, J.-L. / Degraeve, R. / Groeseneken, G. / Maes, H. E. | 1996
767
Electric Field Dependence of Charge Build-up Mechanisms and Breakdown Phenomena in Thin Oxides during Fowler-Nordheim Injection
Vincent, E. / Papadas, C. / Ghibaudo, G. | 1996
773
Novel MSM-2DEG PD/HEMT Photoreceiver for 10GBit/s Operation
Horstmann, M. / Muttersbach, J. / Van der Hart, A. / Schimpf, K. | 1996
777
Use of Gain non-Linearities in Two-Terminal Edge-Coupled InGaAs/InP Heterojunction Phototransistors
Van De Casteele, J. / Vilcot, J. P. / Gouy, J. P. / Rolland, P. A. | 1996
781
Low Temperature Dependence of the Device Parameters of Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes
An, S. / Deen, M. J. / Tarof, L. | 1996
787
On 1/f Noise in Polysilicon Emitter Bipolar Transistors: Coherence between Base Current Noise and Emitter Series Resistance Noise
Markus, H. A. W. / Roche, P. / Kleinpenning, T. G. M. | 1996
791
Localized Lifetime Control in Bipolar Silicon Devices
Fallica, G. / Raineri, V. / Saggio, M. / Letor, R. | 1996
795
Application of Silane-Only Selective Epitaxy to the Fabrication of Fully Self-Aligned Silicon Bipolar Transistors
Boussetta, H. / Gregory, H. J. / Bonar, J. M. / Ashburn, A. | 1996
799
Large-Angle-Tilt-Implanted-Based (LATIB) for Walled-Emitter Bipolar Transistors
Niel, S. / Gravier, T. / Granier, A. / Grouillet, A. | 1996
803
Optimisation of a Link Base Implant for Reducing the Access Base Resistance of Single-Poly Quasi Self-Aligned Bipolar Transistors
Vendrame, L. / Gravier, T. / De Berranger, E. / Kirtsch, J. | 1996
807
Self-Aligned Metal/IDP Si Bipolar Technology with 12-ps ECL and 45GHz Dynamic Frequency Divider
Washio, K. / Ohue, E. / Tanabe, M. / Onai, T. | 1996
813
Monte Carlo Simulation of Electron Transport in Si: the First 20 Years
Fischetti, M. V. / Laux, S. E. | 1996
821
Efficient Full Band Monte Carlo Hot Carrier Simulation for Silicon Devices
Jungemann, C. / Yamaguchi, S. / Goto, H. | 1996
825
Modeling Surface Scattering Effects in the Solution of the BTE Based on Spherical Harmonics Expansion
Vecchi, M. C. / Greiner, A. / Rudan, M. | 1996
829
Hot-Carrier Thermal Conductivity for Hydrodynamic Analyses
Brunetti, R. / Golinelli, P. / Reggiani, L. / Rudan, M. | 1996
833
Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET's
Perron, L. / Lacaita, A. / Guzzetti, S. / Bez, R. | 1996
839
Electromigration Failure in Thin-Film Conductors - A Perspective
Lloyd, J. R. | 1996
847
Time-Domain Characterization of Lattice Heating in Power VDMOSFETs by Means of an Interferometric Laserprobe Technique
Seliger, N. / Habas, P. / Gornik, E. | 1996
851
Annealing of Stress-Induced Interface and Border Traps in MOS Devices: a Charge-Pumping Study
Autran, J.-L. / Flament, O. / Chabrerie, C. / Musseau, O. | 1996
855
Kinetics of Hot-Carrier Degradation of Submicron n-Channel LDD MOSFET's
Okhonin, S. / Hessler, T. / Dutoit, M. | 1996
859
New Findings on Hot Carrier Effects in Bulk Silicon MOSFETs
Szelag, B. / Dutoit, M. / Balestra, F. | 1996
865
High Performance 0.1�m-Self-Aligned-Gate GaAs MESFET Technology
Nishimura, K. / Onodera, K. / Aoyama, S. / Tokumitsu, M. | 1996
869
Reliable Complementary HIGFET Technology for High Speed/Low Power Applications
Fawaz, H. / Thiery, J.-F. / Nuyen, L. / Delos, E. | 1996
873
Current Transport in Double Heterojunction HEMTs
Brech, H. / Simlinger, T. / Grave, T. / Selberherr, S. | 1996
877
0.2�m T-Gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown by LP-MOCVD Using an N2-Carrier
Schimpf, K. / Hollfelder, M. / Horstmann, M. / Marso, M. | 1996
881
Microwave Performance of HFETs on Metamorphic In~0~.~7Al~0~.~3As/In~0~.~8Ga~0~.~2As on GaAs Substrates
Karlsson, C. / Rorsman, N. / Wang, S. / Olsson, E. | 1996
885
InAs/AlSb Dual-Gate HFETs with High Maximum Drain Bias
Bolognesi, C. R. / Dvorak, M. W. / Chow, D. H. | 1996
891
Integration of Porous Silicon Interference Filters in Si-Photodiodes
Krueger, M. / Berger, M. G. / Marso, M. / Thoenissen, M. | 1996
895
Array-like Metal-Resistance-Semiconductor Photodetectors: Characterization and Modelling
Zappa, F. / Lacaita, A. / Catuozzo, M. / Gotra, Y. | 1996
899
Analysis of VOC in Soils with a Tin Oxide Multisensor System
Getino, J. / Horrillo, M. C. / Gutierrez, J. / Ares, L. | 1996
903
A Low Voltage Integrated Temperature Sensor
Alesii, F. / Faccio, M. / Ferri, G. / Poduti, C. | 1996
907
A Capacitive Chemical Sensor Based on Porous Silicon
Schoening, M. J. / Crott, M. / Ronkel, F. / Thust, M. | 1996
913
New 3D Polycrystalline Model of Electromigration Induced Voiding at Interconnect Vias
Ghiti, A. / O'Neill, A. G. / Low, K. S. / Trattles, J. T. | 1996
917
Improvements in the Electromigration Performance of an Aluminium-Copper Alloy Metallization by Optimization of the Copper Distribution
Foley, S. / Martin, D. / Mathewson, A. | 1996
921
Electrical and Thermal Local Effects Simulation for Electromigration
Borgarino, M. / Castagnini, A. / De Munari, I. / Fantini, F. | 1996
925
The Correlation Between ESD Robustness and Design Parameters in Submicron CMOS Technologies
Kwon, K. H. / Lee, K. H. / Park, K. S. / Lim, S. K. | 1996
929
Electroluminescence Imaging for Defect Characterization in InP Based Optoelectronic Devices
Neitzert, H. C. / Cappa, V. / Massetti, S. | 1996
935
Recent Advances and Trends in SOI CMOS Technology
Colinge, J. P. | 1996
943
Selectively Grown Short Channel Vertical Si-p MOS Transistor for Future Three Dimensional Self-Aligned Integration
Behammer, D. / Vescan, L. / Loo, R. / Moers, J. | 1996
947
Analyses of Sub 1/4-�m MOS-Transistors by Visible Light Emission
Mueller, J. / Wirth, G. / Hilleringmann, U. / Goser, K. | 1996
951
Photon Emission in Deep Submicron SOI MOSFETs
Renn, S.-H. / Pelloie, J.-L. / Balestra, J. | 1996
957
A Straightforward Noise de-Embedding Method and its Application to High-Speed Silicon Bipolar Transistors
Aufinger, K. / Boeck, J. | 1996
961
The 1/f Noise Behaviour of Interface Engineered Polysilicon Emitter Bipolar Transistors
Simoen, E. / Decoutere, S. / Cuthbertson, A. / Claeys, C. | 1996
965
2-D Modelling of Electronic Noise in Semiconductor Devices
Houlet, P. / Bonani, F. / Ghione, G. / Varani, L. | 1996
969
Neural Networks for Designing and Reverse Engineering BJTs
Ferguson, R. / Roulston, D. J. | 1996
973
Analytical Theory of Gate-Induced Injection Barrier Modulation in Compensated CMOS-Compatible Bipolar Transistors
Freund, D. / Kostka, A. | 1996
979
Hot-Carrier Degradation and Oxide Charge Build-up in Self-Aligned Etched-Polysilicon npn Bipolar Transistors
Neviani, A. / Pavan, P. / Tommasin, T. / Nardi, A. | 1996
983
Effects of Non-Degenerately Doped Polysilicon on the Hot-Carrier Reliability of Tungsten Polycide Gate PMOSFETs
Lou, C. L. / Chim, W. K. / Chan, D. S. H. / Pan, Y. | 1996
987
Hot-Carrier Reliability in n-MOSFETs Used as Pass-Transistors
Goguenheim, D. / Bravaix, A. / Vuillaume, D. / Varrot, M. | 1996
991
Impact of Profiled LDD Structure on Hot Carrier Degradation of nMOSFETs
Park, H.-S. / Kim, K.-S. / Park, S.-J. / Oh, S.-J. | 1996
995
Optimization of the Reliability of 0.25�m n-MOSFETs
Hessler, T. / Okhonin, S. / Dutoit, M. | 1996
1001
Anomalous Impact-Ionization Gate Current in High Breakdown InP-Based HEMT's
Meneghesso, G. / Manfredi, M. / Pavesi, M. / Auer, U. | 1996
1005
Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise Analysis to Detect Traps in HEMTs
Saysset, N. / Labat, N. / Touboul, A. / Danto, Y. | 1996
1009
Hot-Electron Degradation of the DC and Microwave Performance of InAlAs/InGaAs/InP HEMTs
Menozzi, R. / Borgarino, M. / Baeyens, Y. / Van Hove, M. | 1996
1013
Degradation of AlInAs HEMT Structures Induced by SiO~2 Mask Layer Deposition
Haddab, Y. / Spicher, J. / Beck, M. | 1996
1017
Impact of Gate Recess Offset on Pseudomorphic HEMT Performance: a Simulation Study
Asenov, A. / Babiker, S. / Cameron, N. / Taylor, M. R. S. | 1996
1023
High-Performance a-Si:H TFT for Large-Area AMLCDs
Chen, C.-Y. / Kanicki, J. | 1996
1033
The Recent Trends in a-Si:H Thin-Film Transistors Technology
Ibaraki, N. | 1996
1041
Excimer Laser Annealing Technology for Poly-Si Thin-Film Transistors Fabrication
Kuriyama, H. / Hamada, H. | 1996
1051
Investigation of a-Si:H Density of States by Photo Induced Discharge
Mariucci, L. / Carluccio, R. / Massimiani, D. / Fortunato, G. | 1996
1055
Investigation on the Kink Effect in Poly-TFTs
Valdinoci, M. / Colalongo, L. / Baccarani, G. / Fortunato, G. | 1996
1059
A Low Temperature Process (� 600�C) of Unhydrogenated in-situ Doped Polysilicon Thin Film Transistors for Active-Matrix Applications
Pichon, L. / Raoult, F. / Mourgues, K. / Bonnaud, O. | 1996
1063
Influence of Tunnel Effects on C-V Curves in Amorphous Silicon Devices
Pellegrini, A. / Rudan, M. | 1996
1067
Numerical Simulation of Transient Emission from Deep Level Traps in Polysilicon Thin Film Transistors
Armstrong, G. A. / Ayres, J. R. / Brotherton, S. D. | 1996
1071
High Quality Polycristalline Thin Films Transistors Made by Excimer Laser Crystallisation
Legagneux, P. / Petinot, F. / Huet, O. / Plais, F. | 1996
1075
Excimer-Laser Crystallization of Silicon-Germanium
Ishihara, R. / Ishikawa, K. / Matsumura, M. | 1996
1807
All GaAs/AlGaAs Readout Circuit for Quantum-Well Infrared Detector Focal Plane Array
Umansky, V. / Bunin, G. / Gartsman, K. / Sharman, C. | 1997
1813
A New Charge Conserving Capacitance Model for GaAs MESFET's
Nawaz, M. / Fjeldly, T. A. | 1997
1822
Optimization of Pseudomorphic HEMT's Supported by Numerical Simulations
Brech, H. / Grave, T. / Simlinger, T. / Selberherr, S. | 1997
1829
Operation of a Ballistic Heterojunction Permeable Base Transistor
Wernersson, L.-E. / Litwin, A. / Samuelson, L. / Xu, H. | 1997
1837
Surface Passivation of GaAs MESFET's
Charache, G. W. / Akram, S. / Maby, E. W. / Bhat, I. B. | 1997
1843
Monte Carlo Harmonic-Balance and Drift-Diffusion Harmonic-Balance Analyses of 100-600 GHz Schottky Barrier Varactor Frequency Multipliers
Lipsey, R. E. / Jones, S. H. / Jones, J. R. / Crowe, T. W. | 1997
1851
Analytical Expressions for the Tunnel Current at Abrupt Semiconductor-Semiconductor Heterojunctions
Searle, S. / Pulfrey, D. L. / Kleckner, T. C. | 1997
1857
A Silicon Micromachined Scanning Thermal Profiler with Integrated Elements for Sensing and Actuation
Gianchandani, Y. B. / Najafi, K. | 1997
1869
A Low Driving Voltage CCD with Single Layer Electrode Structure for Area Image Sensor
Tanaka, N. / Nakamura, N. / Matsunaga, Y. / Manabe, S. | 1997
1875
A Low-Voltage Tunneling-Based Silicon Microaccelerometer
Yeh, C. / Najafi, K. | 1997
1883
Analytical Noise Model with the Influence of Shot Noise Induced by the Gate Leakage Current for Submicrometer Gate-Length High-Electron-Mobility Transistors
Shin, D.-S. / Lee, J. B. / Min, H. S. / Oh, J.-E. | 1997
1888
A Standby Current Limited Performance Figure of Merit for Deep Sub-Micron CMOS
Chapman, R. A. / Holloway, T. C. / McNeil, V. M. / Chatterjee, A. | 1997
1896
An Analytical Drain Current Model for Submicrometer and Deep Submicrometer MOSFET's
Jang, S.-L. / Hu, M.-C. | 1997
1903
Tantalum-Gate Thin-Film SOI nMOS and pMOS for Low-Power Applications
Shimada, H. / Hirano, Y. / Ushiki, T. / Ino, K. | 1997
1908
A Unified Approach to Profiling the Lateral Distributions of Both Oxide Charge and Interface States in n-MOSFET's Under Various Bias Stress Conditions
Cheng, S.-M. / Yih, C.-M. / Yeh, J.-C. / Kuo, S.-N. | 1997
1915
Effects of the Inversion Layer Centroid on MOSFET Behavior
Lopez-Villanueva, J. A. / Cartujo-Casinello, P. / Banqueri, J. / Gamiz, F. | 1997
1923
Characteristics of SOI FET's Under Pulsed Conditions
Jenkins, K. A. / Sun, J. Y.-C. / Gautier, J. | 1997
1931
Physics and Numerical Simulation of Single Photon Avalanche Diodes
Spinelli, A. / Lacaita, A. L. | 1997
1951
Predicting CMOS Speed with Gate Oxide and Voltage Scaling and Interconnect Loading Effects
Chen, K. / Hu, C. / Fang, P. / Lin, M. R. | 1997
1958
Low-Temperature Annealing of Polycrystalline Si~1~-~xGe~x After Dopant Implantation
Jin, Z. / Gururaj, B. A. / Yeung, M. W. Y. / Kwok, H. S. | 1997
1965
Use of Gas as Low-k Interlayer Dielectric in LSI's: Demonstration of Feasibility
Anand, M. B. / Yamada, M. / Shibata, H. | 1997
1972
Grounded-Gate nMOS Transistor Behavior Under CDM ESD Stress Conditions
Verhaege, K. / Russ, C. / Luchies, J.-M. / Groeseneken, G. | 1997
1981
A SOI-RF-CMOS Technology on High Resistivity SIMOX Substrates for Microwave Applications to 5 GHz
Eggert, D. / Huebler, P. / Huerrich, A. / Kueck, H. | 1997
1990
Optimal Current for Minimum Thermal Noise Operation of Submicrometer MOS Transistors
Triantis, D. P. / Birbas, A. N. | 1997
1996
Degradation Mechanism in Carbon-Doped GaAs Minority-Carrier Injection Devices
Fushimi, H. / Wada, K. | 1997
2002
Spiral Junction Termination
Krizaj, D. / Amon, S. / Mingues, C. / Charitat, G. | 1997
2011
Dielectrically Isolated Lateral Merged PiN Schottky (LMPS) Diodes
Sunkavalli, R. / Baliga, B. J. / Tamba, A. | 1997
2017
SIMFCT: A MOS-Gated FCT with High Voltage-Current Saturation
Sridhar, S. / Baliga, B. J. | 1997
2022
Design of a Low-Voltage, Axially Modulated, Cusp-Injected, Third Harmonic, X-Band Gyrotron Amplifier Experiment
Liu, A. / Lawson, W. / Fernandez, A. / Rodgers, J. | 1997
2029
Improving Breakdown Voltage of SiC/Si Heterojunction with Graded Structure by Rapid Thermal CVD Technology
Hwang, J. D. / Fang, Y. K. / Wu, K. H. / Chou, S. M. | 1997
2031
Abrupt Negative Differential Resistance in Ungated GaAs FET's
Ahmed, M. M. | 1997
2033
Approximation of the Length of Velocity Saturation Region in MOSFET's
Wong, H. / Poon, M. C. | 1997
2036
Electrical Characteristics of Poly-Si TFT's with Smooth Surface Roughness at Oxide/Poly-Si Interface
Min, B.-H. / Park, C.-M. / Han, M.-K. | 1997
2038
High-Frequency Small-Signal and Large-Signal Characteristics of Resonant Tunneling High Electron Mobility Transistors (RTHEMT's)
Chen, K. J. / Maezawa, K. / Yamamoto, M. | 1997
2041
Fabrication of N^+-N Iso-Type Diodes with LPCVD-Grown Polysilicon on Silicon Structures
Mohajerzadeh, S. / Selvakumar, C. R. | 1997
2044
Effect of Gate-Field Dependent Mobility Degradation on Distortion Analysis in MOSFET's
Van Langevelde, R. / Klaassen, F. M. | 1997
2053
A Hot-Carrier Degradation Mechanism and Electrical Characteristics in S~4D n-MOSFET's
Yoshitomi, T. / Saito, M. / Ohguro, T. / Ono, M. | 1997
2064
A High Performance 16 Mb DRAM Using Giga-Bit Technologies
Jeong, G.-T. / Lee, K.-C. / Ha, D.-W. / Lee, K.-H. | 1997
2070
EXTIGATE: The Ultimate Process Architecture for Submicron CMOS Technologies
Schwalke, U. / Kerber, M. / Koller, K. / Jacobs, H. J. | 1997
2083
Modeling of Light-Addressable Potentiometric Sensors
Colalongo, L. / Verzellesi, G. / Passeri, D. / Lui, A. | 1997
2091
A 30-GHz fT Quasi-Self-Aligned Single-Poly Bipolar Technology
De Pontcharra, J. / Behouche, E. / Ailloud, L. / Thomas, D. | 1997
2106
Investigation on Anomalous Leakage Currents in Poly-TFT's Including Dynamic Effects
Colalongo, L. / Valdinoci, M. / Baccarani, G. | 1997
a3
Addendum
| 1996
ix
Scientific Programme Committees
| 1996
viii
Committees
| 1996
xi
Sponsors
| 1996
xii
Sessions
| 1996
Technical Contents
| 1996