Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate Dielectrics (Englisch)
- Neue Suche nach: Krug, C.
- Neue Suche nach: Baumvol, I. J. R.
- Neue Suche nach: Stedile, F. C.
- Neue Suche nach: Green, M. L.
- Neue Suche nach: Klemens, F.
- Neue Suche nach: Silverman, P. J.
- Neue Suche nach: Sorsch, T. W.
- Neue Suche nach: Alvarez, F.
- Neue Suche nach: Hammer, P.
- Neue Suche nach: Victoria, N. M.
- Neue Suche nach: Electrochemical Society
- Neue Suche nach: Krug, C.
- Neue Suche nach: Baumvol, I. J. R.
- Neue Suche nach: Stedile, F. C.
- Neue Suche nach: Green, M. L.
- Neue Suche nach: Klemens, F.
- Neue Suche nach: Silverman, P. J.
- Neue Suche nach: Sorsch, T. W.
- Neue Suche nach: Alvarez, F.
- Neue Suche nach: Hammer, P.
- Neue Suche nach: Victoria, N. M.
- Neue Suche nach: Massoud, H. Z.
- Neue Suche nach: Electrochemical Society
In:
Physics and chemistry of SiO2 and the Si-SiO2 interface
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187-198
;
2000
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate Dielectrics
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Beteiligte:Krug, C. ( Autor:in ) / Baumvol, I. J. R. ( Autor:in ) / Stedile, F. C. ( Autor:in ) / Green, M. L. ( Autor:in ) / Klemens, F. ( Autor:in ) / Silverman, P. J. ( Autor:in ) / Sorsch, T. W. ( Autor:in ) / Alvarez, F. ( Autor:in ) / Hammer, P. ( Autor:in ) / Victoria, N. M. ( Autor:in )
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Kongress:International symposium; 4th, Physics and chemistry of SiO2 and the Si-SiO2 interface ; 2000 ; Toronto, Canada
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Erschienen in:PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV ; 2000-2 ; 187-198
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Verlag:
- Neue Suche nach: Electrochemical Society
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Erscheinungsort:Pennington, NJ
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Erscheinungsdatum:01.01.2000
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Format / Umfang:12 pages
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Anmerkungen:Includes bibliographical references and indexes
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Ultra-Thin Gate SiO~2 TechnologyIwai, H. / Momose, H. S. / Ohmi, S.-I. / Electrochemical Society et al. | 2000
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Scaling of Gate Dielectrics for Advanced CMOS ApplicationsMa, T.-P. / Electrochemical Society et al. | 2000
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Defect Generation and Reliability of Ultra-Thin SiO~2 at Low VoltageStathis, J. H. / DiMaria, D. J. / Electrochemical Society et al. | 2000
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Deuterium/Hydrogen Isotope Effect and Processing for CMOS TechnologiesKizilyalli, I. / Electrochemical Society et al. | 2000
- 57
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Dynamics of Thermal Growth of Silicon Oxide Films on Side Almeida, R. M. C. / Goncalves, S. / Baumvol, I. J. R. / Stedile, F. C. / Electrochemical Society et al. | 2000
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Growth Mechanism of SiO~2 Ultra-Thin Film on Si(100) by Highly Concentrated Ozone Supplied at Low and High Pressure ConditionsIchimura, S. / Nakamura, K. / Kurokawa, A. / Itoh, H. / Koike, K. / Electrochemical Society et al. | 2000
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Oxide Surface Roughness During Stepwise Wet Etching of Fowler-Nordheim Stressed Silicon Dioxide FilmsYamabe, K. / Liao, K. / Murata, M. / Electrochemical Society et al. | 2000
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Oxidation of Si(001) Surface and Formation of Si/SiO~2 InterfaceUchiyama, T. / Uda, T. / Terakura, K. / Electrochemical Society et al. | 2000
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Improvement of Gate Oxide Integrity by Preparing Atomic Order Flattened Si (100) SurfaceNakamura, O. / Ohkawa, T. / Ohmi, T. / Electrochemical Society et al. | 2000
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Low-Temperature Formation of Gate-Grade Silicon Oxide Films Using High-Density Krypton PlasmaSaito, Y. / Sekine, K. / Hirayama, M. / Ohmi, T. / Electrochemical Society et al. | 2000
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Gate Oxide Thinning in MOS Structures with Shallow Trench IsolationBalasubramanian, N. / Johnson, E. / Perera, C. / Mian, C.-S. / Sheng, T.-T. / Peidous, I. V. / Ping, G. / Cuthbertson, A. / Sundaresan, R. / Electrochemical Society et al. | 2000
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Chemical Structures of Oxynitride/Si(100) InterfaceTakahashi, K. / Nohira, H. / Kato, H. / Tamura, N. / Hikazutani, K. / Sano, S. / Hattori, T. / Electrochemical Society et al. | 2000
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Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate DielectricsKrug, C. / Baumvol, I. J. R. / Stedile, F. C. / Green, M. L. / Klemens, F. / Silverman, P. J. / Sorsch, T. W. / Alvarez, F. / Hammer, P. / Victoria, N. M. et al. | 2000
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Nitrogen Implantation Effects on Ultra-Thin Gate Oxide Grown on Nitrogen-Implanted SiliconNam, I.-H. / Hong, S. I. / Sim, J. S. / Park, B.-G. / Lee, J. D. / Lee, S.-W. / Kang, M.-S. / Kim, Y.-W. / Suh, K.-P. / Electrochemical Society et al. | 2000
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Characterization of Ultrathin Oxide Interfaces (T~o~x <1 nm) in Oxide-Nitride Stack Formed by Remote Plasma Enhanced Chemical Vapor DepositionWang, Z. / Wang, S. / Li, W. / Young, C. / Croswell, R. T. / Hauser, J. R. / Electrochemical Society et al. | 2000
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Silica: A Geochemist's PerspectiveRimstidt, J. D. / Electrochemical Society et al. | 2000
- 235
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Hydrogen in Buried SiO~2 LayersRevesz, A. G. / Stahlbush, R. E. / Hughes, H. L. / Electrochemical Society et al. | 2000
- 241
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Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX WafersShimura, T. / Hosoi, T. / Umeno, M. / Electrochemical Society et al. | 2000
- 251
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Theoretical Study of Oxygen Radicals Impacting Hydrogen-Terminated Silicon SurfacesTachibana, A. / Electrochemical Society et al. | 2000
- 261
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Ab-Initio Approach on Defect Dynamics in SiO~2 Induced by Electronic ExcitationsMiyamoto, Y. / Yokozawa, A. / Electrochemical Society et al. | 2000
- 271
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Model Interface Between Silicon and Disordered SiO~2Pasquarello, A. / Hybertsen, M. S. / Electrochemical Society et al. | 2000
- 283
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Atomic Structure and Hyperfine Spectrum of P~b-Type Defects at Si-SiO~2 Interfaces: An Ab-Initio InvestigationStirling, A. / Pasquarello, A. / Charlier, J.-C. / Car, R. / Electrochemical Society et al. | 2000
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Electronic Structures of SiO~2/Si(001) InterfacesYamasaki, T. / Kaneta, C. / Uchiyama, T. / Uda, T. / Terakura, K. / Electrochemical Society et al. | 2000
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Incorporation and Electronics States of a Carbon Atom in SiO~2 As Examined Through Calculations from First PrinciplesMaruizumi, T. / Ushio, J. / Electrochemical Society et al. | 2000
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Large-Scale Modeling of SiO~2/Si(011) Interface Structures by Using a Novel Inter-Atomic Interaction ModelWatanabe, T. / Ohdomari, I. / Electrochemical Society et al. | 2000
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Soft and Hard Breakdown of Ultrathin SiO~2 Gate OxidesSune, J. / Miranda, E. / Electrochemical Society et al. | 2000
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The Origin and the Creation Mechanism of Positive Charges in Silicon Oxide FilmsOhmori, K. / Ikeda, H. / Sakai, A. / Zaima, S. / Yasuda, Y. / Electrochemical Society et al. | 2000
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A New Methodology for a Statistical Evaluation of SILC: Characterization of Stress Conditions and Oxide TechnologyGhidini, G. / Rigamonti, M. / Brazelli, D. / Pellizzer, F. / Martinelli, A. / Galbiati, N. / Electrochemical Society et al. | 2000
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Physics and Prospects of Sub-2 nm OxidesAlam, M. A. / Weir, B. / Silverman, P. / Bude, J. / Ghetti, A. / Ma, Y. / Brown, M. M. / Hwang, D. / Hamad, A. / Electrochemical Society et al. | 2000
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Soft Breakdown Mechanism in Ultrathin Gate OxidesMizubayashi, W. / Itokawa, H. / Miyazaki, S. / Hirose, M. / Electrochemical Society et al. | 2000
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The Conductance Technique: A Method to Separate and Characterize Interface StatesUren, M. J. / Electrochemical Society et al. | 2000
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Pulsed ESR Characterization of SiO~2 Thin Layers on SiIsoya, J. / Yamasaki, S. / Tanaka, K. / Kamigaki, Y. / Kobayashi, T. / Morita, Y. / Morishita, N. / Electrochemical Society et al. | 2000
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Electrical Performance of Stacked High-kappa Gate Dielectrics: Remote Plasma CVD Ta~2O~5 and (Ta~2O~5)~x(SiO~2)~1~-~x Alloys with Ultrathin Plasma Processed SiO~2 Interface LayersNiimi, H. / Johnson, R. S. / Lucovsky, G. / Massoud, H. Z. / Electrochemical Society et al. | 2000
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Electrical Performance of MOS Devices with Plasma Deposited ZrO~2-SiO~2 Pseudo-Binary Silicate AlloysTherrien, R. / Rayner, B. / Lucovsky, G. / Electrochemical Society et al. | 2000
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Characterization of Bulk and Interface Properties of Dielectric Layers and StacksOkorn-Schmidt, H. F. / Gusev, E. P. / Buchanan, D. A. / Cartier, E. / Guha, S. / Bojarczuk, N. A. / Rath, D. L. / Callegari, A. / Gribelyuk, M. / Copel, M. et al. | 2000
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