High optical power ultraviolet superluminescent InGaN diodes [8625-61] (Englisch)
- Neue Suche nach: Kafar, A.
- Neue Suche nach: Stanczyk, S.
- Neue Suche nach: Targowski, G.
- Neue Suche nach: Czernecki, R.
- Neue Suche nach: Wisniewski, P.
- Neue Suche nach: Leszczynski, M.
- Neue Suche nach: Suski, T.
- Neue Suche nach: Perlin, P.
- Neue Suche nach: SPIE (Society)
- Neue Suche nach: Kafar, A.
- Neue Suche nach: Stanczyk, S.
- Neue Suche nach: Targowski, G.
- Neue Suche nach: Czernecki, R.
- Neue Suche nach: Wisniewski, P.
- Neue Suche nach: Leszczynski, M.
- Neue Suche nach: Suski, T.
- Neue Suche nach: Perlin, P.
- Neue Suche nach: Chyi, Jen-Inn
- Neue Suche nach: Nanishi, Yasushi
- Neue Suche nach: Morkoc Hadis
- Neue Suche nach: SPIE (Society)
In:
Gallium nitride materials and devices
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8625 1S
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2013
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:High optical power ultraviolet superluminescent InGaN diodes [8625-61]
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Beteiligte:Kafar, A. ( Autor:in ) / Stanczyk, S. ( Autor:in ) / Targowski, G. ( Autor:in ) / Czernecki, R. ( Autor:in ) / Wisniewski, P. ( Autor:in ) / Leszczynski, M. ( Autor:in ) / Suski, T. ( Autor:in ) / Perlin, P. ( Autor:in ) / Chyi, Jen-Inn / Nanishi, Yasushi
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Kongress:Conference; 8th, Gallium nitride materials and devices ; 2013 ; San Francisco, CA
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Erschienen in:Gallium nitride materials and devices ; 8625 1SPROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 8625 ; 8625 1S
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsort:Bellingham
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Erscheinungsdatum:01.01.2013
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Format / Umfang:8625 1S
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Anmerkungen:Includes bibliographical references and index.
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 86250B
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HVPE-GaN growth on ammonothermal GaN crystalsSochacki, Tomasz / Amilusik, Mikolaj / Lucznik, Boleslaw / Boćkowski, Michal / Weyher, Janusz L. / Nowak, Grzegorz / Sadovyi, Bogdan / Kamler, Grzegorz / Grzegory, Izabella / Kucharski, Robert et al. | 2013
- 86250D
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The source of holes in p-type InxGa1-xN filmsZvanut, M. E. / Willoughby, W. R. / Koleske, D. D. et al. | 2013
- 86250G
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Defects in nitrides, positron annihilation spectroscopyTuomisto, Filip et al. | 2013
- 86250J
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Short period InN/nGaN superlattices: experiment versus theorySuski, T. / Gorczyca, I. / Staszczak, G. / Wang, X. Q. / Christensen, N. E. / Svane, A. / Dimakis, E. / Moustakas, T. D. et al. | 2013
- 86250K
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Defects generation and annihilation in GaN grown on patterned silicon substrateSawaki, N. / Ito, S. / Nakagita, T. / Iwata, H. / Tanikawa, T. / Irie, M. / Honda, Y. / Yamaguchi, M. / Amano, H. et al. | 2013
- 86250L
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Nonlinear absorption in InN under resonant- and non-resonant excitationAhn, H. / Lee, M.-T. / Chang, Y.-M. / Peng, J. L. / Gwo, S. et al. | 2013
- 86250P
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Raman spectroscopy of GaN and AlGaN nanowires: from ensemble to single nanowire studyWang, J. / Bayon, C. / Demangeot, F. / Pechou, R. / Mlayah, A. / Cros, A. / Daudin, B. et al. | 2013
- 86250R
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Nanolithography for 3-dimentional nanostructures: enhancement of light output power in vertical light emitting diodesSong, Yang Hee / Son, Jun Ho / Kim, Buem Joon / Lee, Jong-Lam et al. | 2013
- 86250S
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High efficient InGaN blue light emitting diode with embedded nanoporous structurePeng, Wei-Chih / Chang, Shih-Pang / Hsu, Ta-Cheng et al. | 2013
- 86250T
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Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layersBilousov, Oleksandr V. / Carvajal, Joan J. / O'Dwyer, Colm / Mateos, Xavier / Díaz, Francesc / Aguiló, Magdalena et al. | 2013
- 86250V
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GaN power devices for automotive applicationsUesugi, T. / Kachi, Tetsu et al. | 2013
- 86250W
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The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistorsLiu, L. / Lo, C. F. / Xi, Y. Y. / Wang, Y. X. / Kim, H.-Y. / Kim, J. / Pearton, S. J. / Laboutin, O. / Cao, Y. / Johnson, J. W. et al. | 2013
- 86250X
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Junction temperature measurements and reliability of GaN FETsKuball, Martin / Pomeroy, James W. / Montes Bajo, Miguel / Silvestri, Marco / Uren, Michael J. / Killat, Nicole et al. | 2013
- 86250Z
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Traps and defects in pre- and post-proton irradiated AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodesSin, Yongkun / Foran, Brendan / Presser, Nathan / LaLumondiere, Stephen / Lotshaw, William / Moss, Steven C. et al. | 2013
- 86251A
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Tunable light source with GaN-based violet laser diodeOmori, Masaki / Mori, Naoki / Dejima, Norihiro et al. | 2013
- 86251C
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Prospect of GaN light-emitting diodes grown on glass substratesChoi, Jun-Hee / Lee, Yun Sung / Baik, Chan Wook / Ahn, Ho Young / Cho , Kyung Sang / Kim, Sun Il / Hwang, Sungwoo et al. | 2013
- 86251G
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Effects of local structure on optical properties in green-yellow InGaN/GaN quantum wellsHwang, Jongil / Hashimoto, Rei / Saito, Shinji / Nunoue, Shinya et al. | 2013
- 86251J
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InGaN based multi-double heterostructure light-emitting diodes with electron injector layersZhang, F. / Hafiz, S. A. / Li, X. / Okur, S. / Avrutin, V. / Özgür, Ü. / Morkoç, H. et al. | 2013
- 86251M
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Investigation of droop-causing mechanisms in GaN-based devices using fully microscopic many-body theoryHader, J. / Moloney, J. V. / Koch, S. W. et al. | 2013
- 86251P
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Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsMeneghini, M. / Trivellin, N. / Berti, M. / Cesca, T. / Gasparotto, A. / Vinattieri, A. / Bogani, F. / Zhu, D. / Humphreys, C. J. / Meneghesso, G. et al. | 2013
- 86251Q
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Development of 260 nm band deep-ultraviolet light emitting diodes on Si substratesMino, Takuya / Hirayama, Hideki / Takano, Takayoshi / Tsubaki, Kenji / Sugiyama, Masakazu et al. | 2013
- 86251S
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High optical power ultraviolet superluminescent InGaN diodesKafar, Anna / Stańczyk, Szymon / Targowski, Grzegorz / Czernecki, Robert / Wiśniewski, Przemek / Leszczyński, Mike / Suski, Tadeusz / Perlin, Piotr et al. | 2013
- 86251W
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X-ray detectors based on GaNDuboz, J. Y. / Frayssinet, E. / Chenot, Sebastien / Reverchon, J. L. / Idir, M. et al. | 2013
- 86251X
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Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN heterostructure waveguidesLupu, A. / Tchernycheva, M. / Sakr, S. / Kotsar, Y. / Isac, N. / Monroy, E. / Julien, F. H. et al. | 2013
- 86251Z
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High voltage bulk GaN-based photoconductive switches for pulsed power applicationsLeach, J. H. / Metzger, R. / Preble, E. A. / Evans, K. R. et al. | 2013
- 86252B
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Microwave performance of AlGaN/AlN/GaN-based single and coupled channels HFETsFerreyra, R. A. / Li, X. / Zhang, F. / Zhu, C. / Izyumskaya, N. / Kayis, C. / Avrutin, V. / Özgür, Ü. / Morkoç, H. et al. | 2013
- 86252C
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Linewidth reduction of site-controlled InGaN quantum dots by surface passivationTeng, Chu-Hsiang / Zhang, Lei / Deng, Hui / Ku, Pei-Cheng et al. | 2013
- 86252D
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Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescenceOkur, Serdal / Jarašiūnas, Kestutis / Hafiz, Shopan din Ahmad / Leach, Jacob / Paskova, Tania / Avrutin, Vitaliy / Morkoç, Hadis / Özgür, Ümit et al. | 2013
- 86252F
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GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectorsZhang, F. / Okur, S. / Hafiz, S. / Avrutin, V. / Özgür, Ü. / Morkoç, H. et al. | 2013
- 86252G
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Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substratesIzyumskaya, N. / Okur, S. / Zhang, F. / Avrutin, V. / Özgür, Ü. / Metzner, S. / Karbaum, C. / Bertram, F. / Christen, J. / Morkoç, H. et al. | 2013
- 86252H
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Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effectsZhu, Congyong / Zhang, Fan / Ferreyra, Romualdo A. / Li, Xing / Kayis, Cemil / Avrutin, Vitaliy / Özgür, Ümit / Morkoç, Hadis et al. | 2013
- 86252I
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Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientationsRomanyuk, O. / Jiříček, P. / Mutombo, P. / Paskova, T. / Bartoš, I. et al. | 2013
- 862501
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Front Matter: Volume 8625| 2013
- 862502
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Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growthYamaguchi, T. / Wang, K. / Araki, T. / Honda, T. / Yoon, E. / Nanishi, Y. et al. | 2013
- 862503
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Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxyYamane, K. / Okada, N. / Furuya, H. / Tadatomo, K. et al. | 2013
- 862507
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Effect of internally focused laser processing of sapphire substrate on bowing management for III-nitride epitaxyAida, Hideo / Hoshino, Hitoshi / Takeda, Hidetoshi / Aikawa, Chikara / Aota, Natsuko / Honjo, Keiji et al. | 2013
- 862509
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Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configurationBoćkowski, Michal / Lucznik, Boleslaw / Sochacki, Tomasz / Amilusik, Mikolaj / Litwin-Staszewska, Elzbieta / Piotrzkowski, Ryszard / Grzegory, Izabella et al. | 2013
- 862511
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Nonpolar and semipolar GaN, optical gain and efficiencyPark, Seoung-Hwan / Ahn, Doyeol et al. | 2013
- 862512
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True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substratesTurski, Henryk / Siekacz, Marcin / Muzioł, Grzegorz / Sawicka, Marta / Grzanka, Szymon / Perlin, Piotr / Suski, Tadeusz / Wasilewski, Zbig R. / Grzegory, Izabella / Porowski, Sylwester et al. | 2013
- 862513
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Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrateStańczyk, Szymon / Czyszanowski, Tomasz / Kucharski, Robert / Kafar, Anna / Suski, Tadeusz / Marona, Łucja / Targowski, Greg / Boćkowski, Michał / Perlin, Piotr et al. | 2013
- 862515
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Picosecond pulse generation in monolithic GaN-based multi-section laser diodesHolc, Katarzyna / Weig, Thomas / Pletschen, Wilfried / Köhler, Klaus / Wagner, Joachim / Schwarz, Ulrich T. et al. | 2013
- 862516
-
Intersubband spontaneous emission from GaN-based THz quantum cascade laserTerashima, W. / Hirayama, H. et al. | 2013
- 862518
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Latest developments in AlGaInN laser diode technologyNajda, S. P. / Perlin, P. / Suski, T. / Marona, L. / Boćkowski, M. / Leszczyński, M. / Wisniewski, Przemyslaw / Czernecki, R. / Kucharski, R. / Targowski, G. et al. | 2013
- 862519
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Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor depositionLochner, Zachary / Kao, Tsung-Ting / Liu, Yuh-Shiuan / Li, Xiao-Hang / Satter, Md. Mahbub / Shen, Shyh-Chiang / Yoder, P. Douglas / Ryou, Jae-Hyun / Dupuis, Russell D. / Wei, Yong et al. | 2013
- 862521
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Thermal properties of InGaN laser diodes and arraysStańczyk, Szymon / Kafar, Anna / Targowski, Grzegorz / Wiśniewski, Przemek / Makarowa, Irina / Suski, Tadeusz / Perlin, Piotr et al. | 2013
- 862522
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Nonradiative recombination due to point defects in GaInN/GaN quantum wells induced by Ar implantationLanger, Torsten / Pietscher, Hans-Georg / Bremers, Heiko / Rossow, Uwe / Menzel, Dirk / Hangleiter, Andreas et al. | 2013
- 862524
-
Design and geometry of hybrid white light-emitted diodes for efficient energy transfer from the quantum well to the nanocrystalsKopylov, Oleksii / Huck, Alexander / Shirazi, Roza / Yvind, Kresten / Kardynal, Beata et al. | 2013
- 862525
-
Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor depositionShieh, C. Y. / Li, Z. Y. / Chiu, C. H. / Tu, P. M. / Kuo, H. C. / Chi, G. C. et al. | 2013
- 862526
-
Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodesChen, Fang-Ming / Liou, Bo-Ting / Chang, Yi-An / Chang, Jih-Yuan / Kuo, Yih-Ting / Kuo, Yen-Kuang et al. | 2013
- 862527
-
Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxyTurski, Henryk / Siekacz, Marcin / Sawicka, Marta / Wasilewski, Zbig R. / Porowski, Sylwester / Skierbiszewski, Czesław et al. | 2013
- 862528
-
Diffusion-assisted current spreading for III-nitride light-emitting applicationsKivisaari, Pyry / Oksanen, Jani / Tulkki, Jukka et al. | 2013
- 862529
-
Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layerShieh, C. Y. / Li, Z. Y. / Kuo, H. C. / Chi, G. C. et al. | 2013
-
The source of holes in p-type In~xGa~1~-~xN films [8625-12]Zvanut, M.E. / Willoughby, W.R. / Koleske, D.D. / SPIE (Society) et al. | 2013
-
Defects in nitrides, positron annihilation spectroscopy (Invited Paper) [8625-15]Tuomisto, F. / SPIE (Society) et al. | 2013
-
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs [8625-58]Meneghini, M. / Trivellin, N. / Berti, M. / Cesca, T. / Gasparotto, A. / Vinattieri, A. / Bogani, F. / Zhu, D. / Humphreys, C.J. / Meneghesso, G. et al. | 2013
-
Short period InN/nGaN superlattices: experiment versus theory [8625-16]Suski, T. / Gorczyca, I. / Staszczak, G. / Wang, X.Q. / Christensen, N.E. / Svane, A. / Dimakis, E. / Moustakas, T.D. / SPIE (Society) et al. | 2013
-
GaN power devices for automotive applications (Invited Paper) [8625-28]Uesugi, T. / Kachi, T. / SPIE (Society) et al. | 2013
-
Microwave performance of AlGaN/AlN/GaN-based single and coupled channels HFETs [8625-81]Ferreyra, R.A. / Li, X. / Zhang, F. / Zhu, C. / Izyumskaya, N. / Kayis, C. / Avrutin, V. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2013
-
Diffusion-assisted current spreading for III-nitride light-emitting applications [8625-78]Kivisaari, P. / Oksanen, J. / Tulkki, J. / SPIE (Society) et al. | 2013
-
Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer [8625-79]Shieh, C.Y. / Li, Z.Y. / Kuo, H.C. / Chi, G.C. / SPIE (Society) et al. | 2013
-
Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy (Invited Paper) [8625-2]Yamane, K. / Okada, N. / Furuya, H. / Tadatomo, K. / SPIE (Society) et al. | 2013
-
Raman spectroscopy of GaN and AlGaN nanowires: from ensemble to single nanowire study (Invited Paper) [8625-22]Wang, J. / Bayon, C. / Demangeot, F. / Pechou, R. / Mlayah, A. / Cros, A. / Daudin, B. / SPIE (Society) et al. | 2013
-
High efficient InGaN blue light emitting diode with embedded nanoporous structure (Invited Paper) [8625-25]Peng, W.-C. / Chang, S.-P. / Hsu, T.-C. / SPIE (Society) et al. | 2013
-
Prospect of GaN light-emitting diodes grown on glass substrates (Invited Paper) [8625-45]Choi, J.-H. / Lee, Y.S. / Baik, C.W. / Ahn, H.Y. / Cho, K.S. / Kim, S.I. / Hwang, S. / SPIE (Society) et al. | 2013
-
Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates [8625-86]Izyumskaya, N. / Okur, S. / Zhang, F. / Avrutin, V. / Ozgur, U. / Metzner, S. / Karbaum, C. / Bertram, F. / Christen, J. / Morkoc, H. et al. | 2013
-
Nanolithography for 3-dimensional nanostructures: enhancement of light output power in vertical light emitting diodes (Invited Paper) [8625-24]Song, Y.H. / Son, J.H. / Kim, B.J. / Lee, J.-L. / SPIE (Society) et al. | 2013
-
True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates [8625-35]Turski, H. / Siekacz, M. / Muziot, G. / Sawicka, M. / Grzanka, S. / Perlin, P. / Suski, T. / Wasilewski, Z.R. / Grzegory, I. / Porowski, S. et al. | 2013
-
Investigation of droop-causing mechanisms in GaN-based devices using fully microscopic many-body theory [8625-55]Hader, J. / Moloney, J.V. / Koch, S.W. / SPIE (Society) et al. | 2013
-
GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors [8625-85]Zhang, F. / Okur, S. / Hafiz, S. / Avrutin, V. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2013
-
The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors (Invited Paper) [8625-29]Liu, L. / Lo, C.F. / Xi, Y.Y. / Wang, Y.X. / Kim, H.-Y. / Kim, J. / Pearton, S.J. / Laboutin, O. / Cao, Y. / Johnson, J.W. et al. | 2013
-
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AIN heterostructure waveguides [8625-67]Lupu, A. / Tchernycheva, M. / Sakr, S. / Kotsar, Y. / Isac, N. / Monroy, E. / Julien, F.H. / SPIE (Society) et al. | 2013
-
Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor deposition [8625-75]Shieh, C.Y. / Li, Z.Y. / Chiu, C.H. / Tu, P.M. / Kuo, H.C. / Chi, G.C. / SPIE (Society) et al. | 2013
-
Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects [8625-87]Zhu, C. / Zhang, F. / Ferreyra, R.A. / Li, X. / Kayis, C. / Avrutin, V. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2013
-
Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers [8625-26]Bilousov, O.V. / Carvajal, J.J. / O Dwyer, C. / Mateos, X. / Diaz, F. / Aguilo, M. / SPIE (Society) et al. | 2013
-
Tunable light source with GaN-based violet laser diode [8625-43]Omori, M. / Mori, N. / Dejima, N. / SPIE (Society) et al. | 2013
-
Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate [8625-36]Stanczyk, S. / Czyszanowski, T. / Kucharski, R. / Kafar, A. / Suski, T. / Marona, L. / Targowski, G. / Bockowski, M. / Perlin, P. / SPIE (Society) et al. | 2013
-
High voltage bulk GaN-based photoconductive switches for pulsed power applications [8625-69]Leach, J.H. / Metzger, R. / Preble, E.A. / Evans, K.R. / SPIE (Society) et al. | 2013
-
Nonlinear absorption in InN under resonant- and non-resonant excitation [8625-18]Ahn, H. / Lee, M.-T. / Chang, Y.-M. / Peng, J.L. / Gwo, S. / SPIE (Society) et al. | 2013
-
Junction temperature measurements and reliability of GaN FETs (Invited Paper) [8625-30]Kuball, M. / Pomeroy, J.W. / Bajo, M.M. / Silvestri, M. / Uren, M.J. / Killat, N. / SPIE (Society) et al. | 2013
-
Latest developments in AlGaInN laser diode technology [8625-41]Najda, S.P. / Perlin, P. / Suski, T. / Marona, L. / Bockowski, M. / Leszczynski, M. / Wisniewski, P. / Czernecki, R. / Kucharski, R. / Targowski, G. et al. | 2013
-
Nonradiative recombination due to point defects in GaInN/GaN quantum wells induced by Ar implantation [8625-72]Langer, T. / Pietscher, H.-G. / Bremers, H. / Rossow, U. / Menzel, D. / Hangleiter, A. / SPIE (Society) et al. | 2013
-
Defects generation and annihilation in GaN grown on patterned silicon substrate [8625-17]Sawaki, N. / Ito, S. / Nakagita, T. / Iwata, H. / Tanikawa, T. / Irie, M. / Honda, Y. / Yamaguchi, M. / Amano, H. / SPIE (Society) et al. | 2013
-
Picosecond pulse generation in monolithic GaN-based multi-section laser diodes [8625-38]Holc, K. / Weig, T. / Pletschen, W. / Kohler, K. / Wagner, J. / Schwarz, U.T. / SPIE (Society) et al. | 2013
-
Effects of local structure on optical properties in green-yellow InGaN/GaN quantum wells [8625-49]Hwang, J. / Hashimoto, R. / Saito, S. / Nunoue, S. / SPIE (Society) et al. | 2013
-
X-ray detectors based on GaN (Invited Paper) [8625-65]Duboz, J.Y. / Frayssinet, E. / Chenot, S. / Reverchon, J.L. / Idir, M. / SPIE (Society) et al. | 2013
-
High optical power ultraviolet superluminescent InGaN diodes [8625-61]Kafar, A. / Stanczyk, S. / Targowski, G. / Czernecki, R. / Wisniewski, P. / Leszczynski, M. / Suski, T. / Perlin, P. / SPIE (Society) et al. | 2013
-
Linewidth reduction of site-controlled InGaN quantum dots by surface passivation [8625-82]Teng, C.-H. / Zhang, L. / Deng, H. / Ku, P.-C. / SPIE (Society) et al. | 2013
-
Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth (Invited Paper) [8625-1]Yamaguchi, T. / Wang, K. / Araki, T. / Honda, T. / Yoon, E. / Nanishi, Y. / SPIE (Society) et al. | 2013
-
InGaN based multi-double heterostructure light-emitting diodes with electron injector layers [8625-52]Zhang, F. / Hafiz, S.A. / Li, X. / Okur, S. / Avrutin, V. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2013
-
Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy [8625-77]Turski, H. / Siekacz, M. / Sawicka, M. / Wasilewski, Z.R. / Porowski, S. / Skierbiszewski, C. / SPIE (Society) et al. | 2013
-
Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations [8625-88]Romanyuk, O. / Jiricek, P. / Mutombo, P. / Paskova, T. / Bartos, I. / SPIE (Society) et al. | 2013
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Nonpolar and semipolar GaN, optical gain and efficiency (Invited Paper) [8625-34]Park, S.-H. / Ahn, D. / SPIE (Society) et al. | 2013
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Intersubband spontaneous emission from GaN-based THz quantum cascade laser (Invited Paper) [8625-39]Terashima, W. / Hirayama, H. / SPIE (Society) et al. | 2013
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Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes [8625-76]Chen, F.-M. / Liou, B.-T. / Chang, Y.-A. / Chang, J.-Y. / Kuo, Y.-T. / Kuo, Y.-K. / SPIE (Society) et al. | 2013
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Effect of internally focused laser processing of sapphire substrate on bowing management for III-nitride epitaxy (Invited Paper) [8625-6]Aida, H. / Hoshino, H. / Takeda, H. / Aikawa, C. / Aota, N. / Honjo, K. / SPIE (Society) et al. | 2013
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Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration [8625-8]Bockowski, M. / Lucznik, B. / Sochacki, T. / Amilusik, M. / Litwin-Staszewska, E. / Piotrzkowski, R. / Grzegory, I. / SPIE (Society) et al. | 2013
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HVPE-GaN growth on ammonothermal GaN crystals [8625-10]Sochacki, T. / Amilusik, M. / Lucznik, B. / Bockowski, M. / Weyher, J.L. / Nowak, G. / Sadovyi, B. / Kamler, G. / Grzegory, I. / Kucharski, R. et al. | 2013
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Traps and defects in pre- and post-proton irradiated AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodes [8625-32]Sin, Y. / Foran, B. / Presser, N. / LaLumondiere, S. / Lotshaw, W. / Moss, S.C. / SPIE (Society) et al. | 2013
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Development of 260 nm band deep-ultraviolet light emitting diodes on Si substrates (Invited Paper) [8625-59]Mino, T. / Hirayama, H. / Takano, T. / Tsubaki, K. / Sugiyama, M. / SPIE (Society) et al. | 2013
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Thermal properties of InGaN laser diodes and arrays [8625-71]Stanczyk, S. / Kafar, A. / Targowski, G. / Wisniewski, P. / Makarowa, I. / Suski, T. / Perlin, P. / SPIE (Society) et al. | 2013
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Design and geometry of hybrid white light-emitted diodes for efficient energy transfer from the quantum well to the nanocrystals [8625-74]Kopylov, O. / Huck, A. / Shirazi, R. / Yvind, K. / Kardynal, B. / SPIE (Society) et al. | 2013
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Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescence [8625-83]Okur, S. / Jarasiunas, K. / Hafiz, S. / Leach, J. / Paskova, T. / Avrutin, V. / Morkoc, H. / Ozgur, U. / SPIE (Society) et al. | 2013