Reliability of InGaN-based LEDs submitted to reverse-bias stress (Englisch)
- Neue Suche nach: Meneghini, M.
- Neue Suche nach: Trivellin, N.
- Neue Suche nach: Butendeich, R.
- Neue Suche nach: Zehnder, U.
- Neue Suche nach: Hahn, B.
- Neue Suche nach: Meneghesso, G.
- Neue Suche nach: Zanoni, E.
- Neue Suche nach: Meneghini, M.
- Neue Suche nach: Trivellin, N.
- Neue Suche nach: Butendeich, R.
- Neue Suche nach: Zehnder, U.
- Neue Suche nach: Hahn, B.
- Neue Suche nach: Meneghesso, G.
- Neue Suche nach: Zanoni, E.
In:
PHYSICA STATUS SOLIDI C CONFERENCES
;
7
, 7-8
;
2208-2210
;
2010
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Reliability of InGaN-based LEDs submitted to reverse-bias stress
-
Beteiligte:Meneghini, M. ( Autor:in ) / Trivellin, N. ( Autor:in ) / Butendeich, R. ( Autor:in ) / Zehnder, U. ( Autor:in ) / Hahn, B. ( Autor:in ) / Meneghesso, G. ( Autor:in ) / Zanoni, E. ( Autor:in )
-
Erschienen in:PHYSICA STATUS SOLIDI C CONFERENCES ; 7, 7-8 ; 2208-2210
-
Verlag:
- Neue Suche nach: John Wiley & Sons, Ltd
-
Erscheinungsdatum:01.01.2010
-
Format / Umfang:3 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 530
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 530 -
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis – Band 7, Ausgabe 7-8
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1721
-
Contents: Phys. Status Solidi C 7/7-8| 2010
- 1737
-
Preface: Phys. Status Solidi C 7/7-8Park, S. J. et al. | 2010
- 1743
-
Deep-UV transparent bulk single-crystalline AlN substratesBickermann, M. / Epelbaum, B. M. / Filip, O. / Heimann, P. / Feneberg, M. / Nagata, S. / Winnacker, A. et al. | 2010
- 1746
-
Sublimation growth of bulk crystals of AlN-rich (AlN)x(SiC)1-x solid solutionsBickermann, M. / Filip, O. / Epelbaum, B. M. / Heimann, P. / Winnacker, A. et al. | 2010
- 1749
-
The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substratesBohnen, T. / van Dreumel, G. W. / Weyher, J. L. / van Enckevort, W. J. / Ashraf, H. / de Jong, A. E. / Hageman, P. R. / Vlieg, E. et al. | 2010
- 1756
-
HVPE GaN substrates: growth and characterizationGogova, D. / Siche, D. / Kwasniewski, A. / Schmidbauer, M. / Fornari, R. / Hemmingsson, C. / Yakimova, R. / Monemar, B. et al. | 2010
- 1760
-
HVPE growth of a -plane GaN on a GaN template (110)Si substrateTanikawa, T. / Suzuki, N. / Honda, Y. / Yamaguchi, M. / Sawaki, N. et al. | 2010
- 1764
-
Growth of free-standing non-polar GaN on (100) g-LiAlO2 substrates by hydride vapor phase epitaxyChou, M. M. / Hang, D. R. / Chen, C. / Li, C. A. / Lu, J. W. / Lee, C. Y. / Tsay, J. D. / Hsu, C. W. / Liu, C. et al. | 2010
- 1767
-
Sublimation growth of nonpolar AlN single crystals and defect characterizationSatoh, I. / Arakawa, S. / Tanizaki, K. / Miyanaga, M. / Yamamoto, Y. et al. | 2010
- 1770
-
Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatmentChoi, Y. J. / Oh, H. K. / Kim, J. G. / Hwang, H. H. / Lee, H. Y. / Lee, W. J. / Shin, B. C. / Hwang, J. et al. | 2010
- 1775
-
AlN bulk crystal growth by sublimation methodKato, T. / Nagai, I. / Miura, T. / Kamata, H. / Naoe, K. / Sanada, K. / Okumura, H. et al. | 2010
- 1778
-
Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayersMoram, M. A. / Kappers, M. J. / Humphreys, C. J. et al. | 2010
- 1781
-
Atom probe extended to AlGaN: three-dimensional imaging of a Mg-doped AlGaN/GaN superlatticeBennett, S. E. / Clifton, P. H. / Ulfig, R. M. / Kappers, M. J. / Barnard, J. S. / Humphreys, C. J. / Oliver, R. A. et al. | 2010
- 1784
-
Structural analysis of nitride-based LEDs grown on micro- and nano-scale patterned sapphire substratesSu, Y. K. / Chen, J. J. / Lin, C. L. / Kao, C. C. et al. | 2010
- 1787
-
Dislocation density assessment via X-ray GaN rocking curve scansBooker, I. / Rahimzadeh Khoshroo, L. / Woitok, J. F. / Kaganer, V. / Mauder, C. / Behmenburg, H. / Gruis, J. / Heuken, M. / Kalisch, H. / Jansen, R. H. et al. | 2010
- 1790
-
Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurementsSintonen, S. / Suihkonen, S. / Svensk, O. / Torma, P. T. / Ali, M. / Sopanen, M. / Lipsanen, H. et al. | 2010
- 1794
-
Characterization of etch pit density for gallium nitride layer grown by HVPE and MOCVDOh, H. K. / Kim, J. G. / Hwang, H. H. / Choi, Y. J. / Lee, H. Y. / Lee, W. J. / Shin, B. C. / Hwang, J. et al. | 2010
- 1798
-
Mechanical properties characterization of c -plane (0001) and m -plane (10-10) GaN by nanoindentation examinationFujikane, M. / Inoue, A. / Yokogawa, T. / Nagao, S. / Nowak, R. et al. | 2010
- 1801
-
An analysis of transient thermal properties for high power GaN-based laser diodesKim, J. M. / Kim, S. / Kang, S. B. / Kim, Y. J. / Jeong, H. / Lee, K. / Kim, J. / Lee, S. / Suh, D. / Yi, J. H. et al. | 2010
- 1804
-
GaN surface nanostructure photodetector based on back side incidenceZhang, J. / Naoi, Y. / Sakai, S. / Fukano, A. / Tanaka, S. et al. | 2010
- 1807
-
Nitride-based light-emitting solar cellKuwahara, Y. / Fujiyama, Y. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2010
- 1810
-
A novel bio-functionalization of AlGaN/GaN-ISFETs for DNA-sensorsLinkohr, S. / Schwarz, S. / Krischok, S. / Lorenz, P. / Cimalla, V. / Nebel, C. / Ambacher, O. et al. | 2010
- 1814
-
Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructuresStrittmatter, A. / Teepe, M. / Yang, Z. / Chua, C. / Northrup, J. / Johnson, N. M. / Spiberg, P. / Brown, R. G. / Ivantsov, V. / Syrkin, A. et al. | 2010
- 1817
-
Growth of In-rich and Ga-rich InGaN alloys by MOCVD and fabrication of InGaN-based photoelectrodesLiu, B. / Luo, W. / Zhang, R. / Zou, Z. / Xie, Z. / Li, Z. / Chen, D. / Xiu, X. / Han, P. / Zheng, Y. et al. | 2010
- 1821
-
AlGaN-based 330 nm resonant-cavity-enhanced p-i-n junction ultraviolet photodetectors using AlN/AlGaN distributed Bragg reflectorsXie, Z. / Liu, B. / Nie, C. / Jiang, R. / Ji, X. / Zhao, H. / Han, P. / Xiu, X. / Zhang, R. / Zheng, Y. et al. | 2010
- 1825
-
Design and performance of 1.55 mm laser using InGaNHasan, M. T. / Islam, M. J. / Hasan, R. u. / Islam, M. S. / Yeasmin, S. / Bhuiyan, A. G. / Islam, M. R. / Yamamoto, A. et al. | 2010
- 1829
-
Piezoelectric actuated epitaxially grown AlGaN/GaN-resonatorsNiebelschuetz, F. / Brueckner, K. / Tonisch, K. / Stephan, R. / Cimalla, V. / Ambacher, O. / Hein, M. A. et al. | 2010
- 1832
-
Fabrication of field emitters using GaN particlesMinakuchi, Y. / Neo, Y. / Mimura, H. / Hara, K. et al. | 2010
- 1835
-
Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodesGrzanka, S. / Perlin, P. / Czernecki, R. / Marona, L. / Bockowski, M. / Lucznik, B. / Leszczynski, M. / Khachapuridze, A. / Goss, J. / Schwarz, U. T. et al. | 2010
- 1838
-
Hydrogen sensing performance dependence on catalytic metal thickness of Pt/AlGaN/GaN Schottky diodesSong, J. / Lu, W. et al. | 2010
- 1841
-
Spontaneous polarization in III-nitride materials: crystallographic revisionKarpov, S. Y. et al. | 2010
- 1844
-
Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurementsTakeuchi, H. / Yanagisawa, J. / Hashimoto, J. / Nakayama, M. et al. | 2010
- 1847
-
Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eVYu, K. M. / Novikov, S. V. / Broesler, R. / Staddon, C. R. / Hawkridge, M. / Liliental-Weber, Z. / Demchenko, I. / Denlinger, J. D. / Kao, V. M. / Luckert, F. et al. | 2010
- 1850
-
Mg-related acceptors in GaNMonemar, B. / Paskov, P. P. / Pozina, G. / Hemmingsson, C. / Bergman, J. P. / Amano, H. / Akasaki, I. / Figge, S. / Hommel, D. / Paskova, T. et al. | 2010
- 1853
-
Carrier relaxation dynamics in InN investigated by femtosecond pump-probe techniqueNargelas, S. / Aleksiejunas, R. / Vengris, M. / Jarasiunas, K. et al. | 2010
- 1856
-
Carrier dynamics in GaN layers overgrown on nanocolumnar structuresWang, H. C. / Tang, T. Y. / Yang, C. C. / Malinauskas, T. / Jarasiunas, K. et al. | 2010
- 1859
-
Light emission polarization properties of strained (11 Formula Not Shown 2) semipolar InGaN quantum wellHuang, H. H. / Wu, Y. R. et al. | 2010
- 1863
-
Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experimentAvakyants, L. / Bokov, P. / Chervyakov, A. / Yunovich, A. / Vasileva, E. / Yavich, B. et al. | 2010
- 1866
-
Q-factor measurements on planar nitride cavitiesCollins, D. P. / Holmes, M. J. / Taylor, R. A. / Oliver, R. A. / Kappers, M. J. / Humphreys, C. J. et al. | 2010
- 1869
-
Spatially-resolved photoluminescence study of high indium content InGaN LED structuresTamulaitis, G. / Mickevicius, J. / Dobrovolskas, D. / Kuokstis, E. / Shur, M. / Shatalov, M. / Yang, J. / Gaska, R. et al. | 2010
- 1872
-
Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wellsNetzel, C. / Hoffmann, V. / Wernicke, T. / Knauer, A. / Weyers, M. / Kneissl, M. et al. | 2010
- 1875
-
Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopyZhu, T. / Kappers, M. J. / Moram, M. A. / Oliver, R. A. et al. | 2010
- 1878
-
Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+Fukui, K. / Sawai, S. / Ito, T. / Emura, S. / Araki, T. / Suzuki, A. et al. | 2010
- 1881
-
Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2x2 surfaceLorenz, P. / Gutt, R. / Himmerlich, M. / Schaefer, J. A. / Krischok, S. et al. | 2010
- 1884
-
Exciton localization in Al-rich AlGaN ternary alloy epitaxial layersMurotani, H. / Yamada, Y. / Taguchi, T. / Kato, R. / Yokogawa, T. et al. | 2010
- 1887
-
Effective mass of InN estimated by Raman scatteringKim, J. G. / Kamei, Y. / Hasuike, N. / Harima, H. / Kisoda, K. / Sasamoto, K. / Yamamoto, A. et al. | 2010
- 1890
-
Hall mobilities in GaNxAs1-xOlea, J. / Yu, K. M. / Walukiewicz, W. / Gonzalez-Diaz, G. et al. | 2010
- 1894
-
Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faultsBadcock, T. J. / Hammersley, S. / Kappers, M. J. / Humphreys, C. J. / Dawson, P. et al. | 2010
- 1897
-
Characterising the degree of polarisation anisotropy in an a -plane GaN filmBadcock, T. J. / Schulz, S. / Moram, M. A. / Kappers, M. J. / Dawson, P. / OReilly, E. P. / Humphreys, C. J. et al. | 2010
- 1900
-
Excitonic binding energies in non-polar GaN quantum wellsSchulz, S. / OReilly, E. P. et al. | 2010
- 1903
-
Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopySumiya, M. / Lozach, M. / Matsuki, N. / Ito, S. / Ohhashi, N. / Sakoda, K. / Yoshikawa, H. / Ueda, S. / Kobayashi, K. et al. | 2010
- 1906
-
Optical band gap of h-BN epitaxial film grown on c -plane sapphire substrateKobayashi, Y. / Tsai, C. L. / Akasaka, T. et al. | 2010
- 1909
-
Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wellsOto, T. / Banal, R. G. / Funato, M. / Kawakami, Y. et al. | 2010
- 1913
-
P-type doping of semipolar GaN(11 Formula Not Shown 2) by plasma-assisted molecular-beam epitaxyDas, A. / Lahourcade, L. / Pernot, J. / Valdueza-Felip, S. / Ruterana, P. / Laufer, A. / Eickhoff, M. / Monroy, E. et al. | 2010
- 1916
-
Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layersTakeda, K. / Mori, F. / Ogiso, Y. / Ichikawa, T. / Nonaka, K. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2010
- 1919
-
Combination of short-range periodicity and interfacial stress effects on valence band scheme in strained MQW (GaN/AlGaN)nEmura, S. / Tani, H. / Kin, M. / Zhou, Y. K. / Hasegawa, S. / Asahi, H. et al. | 2010
- 1922
-
Lateral patterning of GaN polarity using wet etching processFukuhara, Y. / Katayama, R. / Onabe, K. et al. | 2010
- 1925
-
Optical anisotropy in semipolar (Al,In)GaN laser waveguidesScheibenzuber, W. / Schwarz, U. / Veprek, R. / Witzigmann, B. / Hangleiter, A. et al. | 2010
- 1928
-
Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogenIrokawa, Y. / Matsuki, N. / Sumiya, M. / Sakuma, Y. / Sekiguchi, T. / Chikyo, T. / Sumida, Y. / Nakano, Y. et al. | 2010
- 1931
-
Buffer-trap and surface-state effects on gate lag in AlGaN/GaN HEMTsHorio, K. / Nakajima, A. et al. | 2010
- 1934
-
Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayersNi, J. Y. / Hao, Y. / Xue, J. S. / Xu, Z. H. / Zhang, Z. F. / Zhang, J. C. / Yang, L. A. / Zhang, J. F. et al. | 2010
- 1938
-
Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline qualityHashimoto, S. / Akita, K. / Tanabe, T. / Nakahata, H. / Takeda, K. / Amano, H. et al. | 2010
- 1941
-
Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETsTian, F. / Chor, E. F. et al. | 2010
- 1944
-
Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTsLi, Z. / Tang, K. / Chow, T. P. / Sugimoto, M. / Uesugi, T. / Kachi, T. et al. | 2010
- 1949
-
Correlation between growth pits, optical and structural properties of AlGaN/GaN high-electron-mobility transistors on 4Prime silicon substrateKhai, P. C. / Suzue, T. / Sakai, Y. / Selvaraj, S. L. / Egawa, T. / Jimbo, T. et al. | 2010
- 1952
-
High-temperature operation of GaN-based OPAMP on silicon substrateNomoto, K. / Hasegawa, K. / Nakamura, T. et al. | 2010
- 1955
-
Recess gate AlGaN/GaN HEMTs using overlap gate metal structureIde, T. / Piao, G. / Yano, Y. / Shimizu, M. et al. | 2010
- 1958
-
Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structuresLim, T. / Aidam, R. / Kirste, L. / Waltereit, P. / Muller, S. / Ambacher, O. et al. | 2010
- 1961
-
Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interfaceLi, B. K. / Wang, M. J. / Chen, K. J. / Wang, J. N. et al. | 2010
- 1964
-
Study of Si implantation into Mg-doped GaN for MOSFETsOstermaier, C. / Ahn, S. I. / Potzger, K. / Helm, M. / Kuzmik, J. / Pogany, D. / Strasser, G. / Lee, J. H. / Hahm, S. H. et al. | 2010
- 1967
-
Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPECheng, K. / Degroote, S. / Leys, M. / Medjdoub, F. / Derluyn, J. / Sijmus, B. / Germain, M. / Borghs, G. et al. | 2010
- 1970
-
High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approachLee, Y. C. / Kim, H. J. / Zhang, Y. / Choi, S. / Dupuis, R. D. / Ryou, J. H. / Shen, S. C. et al. | 2010
- 1974
-
AlGaN/GaN HFETs on Fe-doped GaN substratesOshimura, Y. / Takeda, K. / Sugiyama, T. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. / Bandoh, A. / Udagawa, T. et al. | 2010
- 1977
-
High drive current and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistorYu, J. W. / Wu, H. M. / Peng, L. H. et al. | 2010
- 1980
-
Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gateSugiyama, T. / Iida, D. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2010
- 1983
-
AlInN/InN metal oxide semiconductor heterostructure field effect transistorIslam, M. S. / Muhtadi, S. M. / Hasan, M. T. / Bhuiyan, A. G. / Islam, M. R. / Hashimoto, A. / Yamamoto, A. et al. | 2010
- 1988
-
Electronic properties of nonpolar cubic GaN MOS structuresAs, D. J. / Pottgen, H. / Tschumak, E. / Lischka, K. et al. | 2010
- 1991
-
The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistorsGu, W. / Hao, Y. / Yang, L. / Duan, C. / Duan, H. / Zhang, J. / Ma, X. et al. | 2010
- 1997
-
2DEG properties in InGaN/InN/InGaN-based double channel HEMTsHasan, M. T. / Kaysir, M. R. / Islam, M. S. / Bhuiyan, A. G. / Islam, M. R. / Hashimoto, A. / Yamamoto, A. et al. | 2010
- 2001
-
Quaternary nitride heterostructure field effect transistorsRahimzadeh Khoshroo, L. / Ketteniss, N. / Mauder, C. / Behmenburg, H. / Woitok, J. F. / Booker, I. / Gruis, J. / Heuken, M. / Vescan, A. / Kalisch, H. et al. | 2010
- 2004
-
Analysis of trapping effects in AlGaN/GaN HEMTs based on near zero bias output conductanceKim, H. / Lu, W. et al. | 2010
- 2007
-
Electrical characterization of n -GaN epilayers using transparent polyaniline Schottky contactsNakano, Y. / Matsuki, N. / Irokawa, Y. / Sumiya, M. et al. | 2010
- 2010
-
Gate-recessed normally-off GaN-on- Si HEMT using a new O2-BCl3 digital etching techniqueBurnham, S. D. / Boutros, K. / Hashimoto, P. / Butler, C. / Wong, D. W. / Hu, M. / Micovic, M. et al. | 2010
- 2013
-
AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drainIm, K. S. / Ha, J. B. / Kim, K. W. / Lee, J. S. / Kim, D. S. / Choi, H. C. / Lee, J. H. et al. | 2010
- 2016
-
RF-MBE growth of InN on 4H-SiC (0001) with off-anglesOrihara, M. / Takizawa, S. / Sato, T. / Ishida, Y. / Yoshida, S. / Hijikata, Y. / Yaguchi, H. et al. | 2010
- 2019
-
Selective growth of InN on patterned GaAs(111)B substrate - influence of InN decomposition at the interfaceMurakami, H. / Cho, H. C. / Kumagai, Y. / Koukitu, A. et al. | 2010
- 2022
-
Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxyKumagai, Y. / Adachi, H. / Otake, A. / Higashikawa, Y. / Togashi, R. / Murakami, H. / Koukitu, A. et al. | 2010
- 2025
-
Structural differences in Mg-doped InN - indication of polytypismLiliental-Weber, Z. / Hawkridge, M. E. / Wang, X. / Yoshikawa, A. et al. | 2010
- 2029
-
Effects of growth temperature on the optical properties of InN nanostructures grown by MOCVDSun, Y. / Cho, Y. H. / Wang, H. / Wang, L. / Zhang, S. / Yang, H. et al. | 2010
- 2033
-
Study of unintentional arsenic incorporation into free-standing zinc-blende GaN and AlGaN layers grown by molecular beam epitaxy on GaAs substratesNovikov, S. V. / Zainal, N. / Foxon, C. T. / Kent, A. J. / Luckert, F. / Edwards, P. R. / Martin, R. W. et al. | 2010
- 2036
-
Formation mechanism of Al-depleted bands in MOVPE-AlGaN layer on GaN template with trenchesKuwano, N. / Ezaki, T. / Kurogi, T. / Miyake, H. / Hiramatsu, K. et al. | 2010
- 2040
-
Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxyKawasaki, T. / Nishikawa, A. / Furukawa, N. / Terai, Y. / Fujiwara, Y. et al. | 2010
- 2043
-
Structural and optical characterization of (11-22) semipolar GaN on m -plane sapphire without low temperature buffer layerLee, S. N. / Kim, K. K. / Nam, O. H. / Kim, J. H. / Kim, H. et al. | 2010
- 2046
-
Growth kinetics of AlxGa1-xN layers (0 x < 1) in plasma-assisted molecular beam epitaxyMizerov, A. M. / Jmerik, V. N. / Kopev, P. S. / Ivanov, S. V. et al. | 2010
- 2049
-
Improved MOCVD growth of GaN on Si-on-porous-silicon substratesIshikawa, H. / Shimanaka, K. / Azfar bin M. Amir, M. / Hara, Y. / Nakanishi, M. et al. | 2010
- 2052
-
Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al-preseeding and HT AlN buffer layersKim, J. O. / Hong, S. K. / Lim, K. Y. et al. | 2010
- 2056
-
Growth and characterization of GaN grown on moth-eye patterned sapphire substratesIshihara, A. / Kawai, R. / Kitano, T. / Suzuki, A. / Kondo, T. / Iwaya, M. / Amano, H. / Kamiyama, S. / Akasaki, I. et al. | 2010
- 2059
-
Characterization of semipolar (11 Formula Not Shown 2) GaN on c -plane sapphire sidewall of patterned r -plane sapphire substrate without SiO2 maskKurisu, A. / Murakami, K. / Abe, Y. / Okada, N. / Tadatomo, K. et al. | 2010
- 2063
-
Evaluation of multiple-quantum-well structure on InGaN template using (11 Formula Not Shown 2) facet growth and mass transportFujita, D. / Miyatake, T. / Shinagawa, T. / Abe, Y. / Murakami, K. / Li, B. / Matsumoto, H. / Murayama, S. / Okada, N. / Tadatomo, K. et al. | 2010
- 2066
-
Growth mechanism of nonpolar m -plane GaN on maskless patterned a -plane sapphire substrateKawashima, Y. / Murakami, K. / Abe, Y. / Okada, N. / Tadatomo, K. et al. | 2010
- 2069
-
Influence of slight misorientations of r -plane sapphire substrates on the growth of nonpolar a -plane GaN layers via HVPESchwaiger, S. / Lipski, F. / Wunderer, T. / Scholz, F. et al. | 2010
- 2073
-
Strain effect on optical polarization properties of a -plane GaN on r -plane sapphireWu, C. / Yu, T. / Tao, R. / Jia, C. / Yang, Z. / Zhang, G. et al. | 2010
- 2076
-
Cubic GaN growth on (311)A GaAs substrate by MOVPESanorpim, S. / Discharoen, N. / Onabe, K. et al. | 2010
- 2079
-
MOVPE growth of high optical quality InGaPN layers on GaAs (001) substratesKaewket, D. / Sanorpim, S. / Tungasmita, S. / Katayama, R. / Onabe, K. et al. | 2010
- 2082
-
In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100 mm sapphire substrates by MOVPECheng, K. / Degroote, S. / Leys, M. / Zhang, L. Y. / Derluyn, J. / Germain, M. / Borghs, G. et al. | 2010
- 2085
-
Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growthSugiyama, M. / Yasukochi, S. / Shioda, T. / Shimogaki, Y. / Nakano, Y. et al. | 2010
- 2088
-
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaNBadcock, T. J. / Haberlen, M. / Kappers, M. J. / Moram, M. A. / Dawson, P. / Humphreys, C. J. / Oliver, R. A. et al. | 2010
- 2091
-
Fabrication of light emitting diodes transferred onto different substrates by GaN substrate separation techniqueKunoh, Y. / Takeuchi, K. / Inoshita, K. / Ohbo, H. / Tokunaga, S. / Goto, T. / Kunisato, T. et al. | 2010
- 2094
-
Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC(0001)Okumura, H. / Kimoto, T. / Suda, J. et al. | 2010
- 2097
-
"Step-graded interlayers" for the improvement of MOVPE InxGa1-xN (x 0.4) epi-layer qualityIslam, M. R. / Ohmura, Y. / Hashimoto, A. / Yamamoto, A. / Kinoshita, K. / Koji, Y. et al. | 2010
- 2101
-
Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layerAsai, T. / Nonaka, K. / Ban, K. / Nagata, K. / Nagamatsu, K. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2010
- 2104
-
In situ SiN passivation of AlInN/GaN heterostructures by MOVPEBehmenburg, H. / Khoshroo, L. R. / Mauder, C. / Ketteniss, N. / Lee, K. H. / Eickelkamp, M. / Brast, M. / Fahle, D. / Woitok, J. F. / Vescan, A. et al. | 2010
- 2107
-
a -plane AlN and AlGaN growth on r -plane sapphire by MOVPEMiyagawa, R. / Miyake, H. / Hiramatsu, K. et al. | 2010
- 2111
-
Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxyBanal, R. G. / Funato, M. / Kawakami, Y. et al. | 2010
- 2115
-
AlN substrates and epitaxy resultsHelava, H. / Chemekova, T. / Avdeev, O. / Mokhov, E. / Nagalyuk, S. / Makarov, Y. / Ramm, M. et al. | 2010
- 2118
-
Temperature control of multiple wafers during etching of 2prime sapphire wafers for patterned sapphire substrates (PSS)Dineen, M. / Ren, Z. et al. | 2010
- 2121
-
Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrateNariyuki, Y. / Matsumoto, M. / Noda, T. / Nishino, K. / Naoi, Y. / Sakai, S. / Fukano, A. / Tanaka, S. et al. | 2010
- 2124
-
Current crowding effect on light extraction efficiency of thin-film LEDsBogdanov, M. V. / Bulashevich, K. A. / Khokhlev, O. V. / Evstratov, I. Y. / Ramm, M. S. / Karpov, S. Y. et al. | 2010
- 2127
-
Effect of ITO spreading layer on performance of blue light-emitting diodesBogdanov, M. V. / Bulashevich, K. A. / Khokhlev, O. V. / Evstratov, I. Y. / Ramm, M. S. / Karpov, S. Y. et al. | 2010
- 2130
-
Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emissionDamilano, B. / Huault, T. / Brault, J. / Lefebvre, D. / Massies, J. et al. | 2010
- 2133
-
Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodesHan, D. / Shim, J. / Shin, D. S. / Nam, E. / Park, H. et al. | 2010
- 2136
-
Plasma assisted LED wafer scribing and fabrication of Ag nanoparticle-embedded LEDLee, J. M. / Bae, S. B. / Youn, D. H. / Park, S. / Ju, J. J. / Jang, M. S. / Jung, H. M. / Kim, C. T. et al. | 2010
- 2140
-
Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substratesWunderer, T. / Wang, J. / Lipski, F. / Schwaiger, S. / Chuvilin, A. / Kaiser, U. / Metzner, S. / Bertram, F. / Christen, J. / Shirokov, S. S. et al. | 2010
- 2144
-
Design and performance of LEDs with circular geometryWang, X. H. / Lai, P. T. / Choi, H. W. et al. | 2010
- 2148
-
Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDsMaier, M. / Passow, T. / Kunzer, M. / Pletschen, W. / Kohler, K. / Wagner, J. et al. | 2010
- 2151
-
Deep etch of GaN by laser micromachiningMak, G. Y. / Lam, E. Y. / Choi, H. W. et al. | 2010
- 2154
-
GaN-based light emitting diodes with periodic nano-structures on the surface fabricated by nanoimprint lithography techniqueNaoi, Y. / Matsumoto, M. / Tan, T. / Tohno, M. / Sakai, S. / Fukano, A. / Tanaka, S. et al. | 2010
- 2157
-
Study on the effect of the relative position of the phosphor layer in the LED package on the high power LED lifetimeHwang, J. H. / Kim, Y. D. / Kim, J. W. / Jung, S. J. / Kwon, H. K. / Oh, T. H. et al. | 2010
- 2162
-
Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride-based LEDsSu, Y. K. / Chen, J. J. / Lin, C. L. / Kao, C. C. / Lin, C. T. et al. | 2010
- 2165
-
Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithographyShinagawa, T. / Abe, Y. / Matsumoto, H. / Li, B. / Murakami, K. / Okada, N. / Tadatomo, K. / Kannaka, M. / Fujii, H. et al. | 2010
- 2168
-
InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelengthZhu, D. / McAleese, C. / Haberlen, M. / Salcianu, C. / Thrush, T. / Kappers, M. / Phillips, A. / Lane, P. / Kane, M. / Wallis, D. et al. | 2010
- 2171
-
Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solutionZou, X. B. / Liang, H. / Lau, K. M. et al. | 2010
- 2174
-
An ultraviolet micro-LED array and its application for microlens fabricationZhu, L. / Lai, P. T. / Choi, H. W. et al. | 2010
- 2177
-
Near-UV LEDs for integrated InO-based ozone sensorsWang, C. Y. / Cimalla, V. / Kunzer, M. / Passow, T. / Pletschen, W. / Kappeler, O. / Wagner, J. / Ambacher, O. et al. | 2010
- 2180
-
Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrodeKawai, R. / Kondo, T. / Suzuki, A. / Teramae, F. / Kitano, T. / Tamura, K. / Sakurai, H. / Iwaya, M. / Amano, H. / Kamiyama, S. et al. | 2010
- 2183
-
Vertical-type InGaN/GaN light emitting diodes with high efficiency reflector ITO/APC alloy on p-GaNHwang, S. M. / Cho, H. K. / Kwon, H. K. / Oh, T. H. et al. | 2010
- 2187
-
Improving current spreading of GaN-based LEDs by N -pad current surrounding designTsai, C. F. / Su, Y. K. / Lin, C. L. et al. | 2010
- 2190
-
Cyan and green light emitting diode on non-polar m -plane GaN bulk substrateDetchprohm, T. / Zhu, M. / You, S. / Li, Y. / Zhao, L. / Preble, E. A. / Paskova, T. / Hanser, D. / Wetzel, C. et al. | 2010
- 2193
-
A precise ray tracing simulation model for GaN based light emitting diodesYang, Z. / Yu, T. / Mu, S. / Chen, Z. / Zhang, G. et al. | 2010
- 2196
-
Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodesKolbe, T. / Sembdner, T. / Knauer, A. / Kueller, V. / Rodriguez, H. / Einfeldt, S. / Vogt, P. / Weyers, M. / Kneissl, M. et al. | 2010
- 2199
-
Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substratesGrandusky, J. / Cui, Y. / Gibb, S. / Mendrick, M. / Schowalter, L. et al. | 2010
- 2202
-
Failure analysis of InGaN/GaN LEDs with emission wavelength between 440 nm and 550 nmLi, Z. L. / Lai, P. T. / Choi, H. W. et al. | 2010
- 2205
-
Degradation characteristics of blue GaN-LED chip related to packagesKang, J. M. / Kim, J. W. / Choi, J. H. / Kim, D. H. / Oh, P. S. / Han, S. K. / Kwon, H. K. et al. | 2010
- 2208
-
Reliability of InGaN-based LEDs submitted to reverse-bias stressMeneghini, M. / Trivellin, N. / Butendeich, R. / Zehnder, U. / Hahn, B. / Meneghesso, G. / Zanoni, E. et al. | 2010
- 2211
-
Optical properties of bulk-like GaN nanorods grown on Si(111) substrates by rf-plasma assisted molecular beam epitaxyPark, Y. S. / Kang, T. W. / Im, H. / Holmes, M. J. / Taylor, R. A. et al. | 2010
- 2214
-
Influence of the piezoelectric constant on the electronic structure of wurtzite InGaN quantum dotsHong, K. B. / Tsai, W. Y. / Kuo, M. K. et al. | 2010
- 2218
-
Photoelectrochemical application of GaN nanostructures on Si for hydrogen generation by water reductionFujii, K. / Kato, T. / Sato, K. / Im, I. / Chang, J. / Yao, T. et al. | 2010
- 2221
-
Time variation of GaN photoelectrochemical reactions affected by light intensity and applied biasKoike, K. / Sato, K. / Fujii, K. / Goto, T. / Yao, T. et al. | 2010
- 2224
-
GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growthLi, S. / Fundling, S. / Sokmen, U. / Neumann, R. / Merzsch, S. / Hinze, P. / Weimann, T. / Jahn, U. / Trampert, A. / Riechert, H. et al. | 2010
- 2227
-
Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrixZhuravlev, K. S. / Aleksandrov, I. A. / Holtz, P. O. et al. | 2010
- 2230
-
Photoluminescence of GaN/AlN quantum dots at high excitation powersAleksandrov, I. / Zhuravlev, K. et al. | 2010
- 2233
-
Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defectsRigutti, L. / Fortuna, F. / Tchernycheva, M. / De Luna Bugallo, A. / Jacopin, G. / Julien, F. H. / Chou, S. T. / Lin, Y. T. / Tu, L. W. / Harmand, J. C. et al. | 2010
- 2236
-
GaN based nanorod light emitting diodes by selective area epitaxyZang, K. / Chua, S. J. et al. | 2010
- 2240
-
Influence of doping on optical properties of catalyst- and mask-free grown gallium nitride nanorodsKalden, J. / Sebald, K. / Kunert, G. / Aschenbrenner, T. / Kruse, C. / Hommel, D. / Gutowski, J. et al. | 2010
- 2243
-
Optical characterization of AlGaN/GaN quantum disc structures in single nanowiresRigutti, L. / Fortuna, F. / Tchernycheva, M. / De Luna Bugallo, A. / Jacopin, G. / Julien, F. H. / Furtmayr, F. / Stutzmann, M. / Eickhoff, M. et al. | 2010
- 2246
-
Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxyLandre, O. / Fellmann, V. / Jaffrennou, P. / Bougerol, C. / Renevier, H. / Daudin, B. et al. | 2010
- 2249
-
Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin filmsYayama, T. / Kangawa, Y. / Kakimoto, K. / Koukitu, A. et al. | 2010
- 2252
-
Electronic properties of group III-A nitride sheets by molecular simulationAnota, E. C. / Villanueva, M. S. / Cocoletzi, H. H. et al. | 2010
- 2255
-
Energy landscape and carrier wave-functions in InGaN/GaN quantum wellsWatson-Parris, D. / Godfrey, M. J. / Oliver, R. A. / Dawson, P. / Galtrey, M. J. / Kappers, M. J. / Humphreys, C. J. et al. | 2010
- 2259
-
Simulations of laser diodes with nonpolar InGaN multi-quantum-wellsLi, Z. Q. / Li, Z. M. / Piprek, J. et al. | 2010
- 2262
-
Modelling of cubic AlxGa1-xN/GaN resonant tunnel diode structuresZainal, N. / Walker, P. / Kent, A. J. et al. | 2010
- 2265
-
Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphereSuzuki, H. / Panyukova, U. / Togashi, R. / Murakami, H. / Kumagai, Y. / Koukitu, A. et al. | 2010
- 2268
-
Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulationNakamura, K. / Hirako, A. / Ohkawa, K. et al. | 2010
- 2272
-
GaN growth on LiNbO3 (0001) - a first-principles simulationSanna, S. / Schmidt, W. G. et al. | 2010
- NA
-
Inside Back Cover: Phys. Status Solidi C 7/7-8| 2010
- NA
-
Inside Front Cover: Phys. Status Solidi C 7/7-8| 2010
- NA
-
Back Cover: Phys. Status Solidi C 7/7-8| 2010
- NA
-
Cover Picture: Phys. Status Solidi C 7/7-8| 2010