The 3rd Asian Conference on Chemical Vapor Deposition (3rd Asian-CVD), Taipei, Taiwan, November 12–14, 2004 (Englisch)
- Neue Suche nach: Feng, Z. C.
- Neue Suche nach: Chen, C. F.
- Neue Suche nach: Kuo, C. T.
- Neue Suche nach: Williams, K.
- Neue Suche nach: Shan, W.
- Neue Suche nach: Feng, Z. C.
- Neue Suche nach: Chen, C. F.
- Neue Suche nach: Kuo, C. T.
- Neue Suche nach: Williams, K.
- Neue Suche nach: Shan, W.
In:
THIN SOLID FILMS
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498
, 1-2
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1
;
2006
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:The 3rd Asian Conference on Chemical Vapor Deposition (3rd Asian-CVD), Taipei, Taiwan, November 12–14, 2004
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Beteiligte:Feng, Z. C. ( Autor:in ) / Chen, C. F. ( Autor:in ) / Kuo, C. T. ( Autor:in ) / Williams, K. ( Autor:in ) / Shan, W. ( Autor:in )
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Erschienen in:THIN SOLID FILMS ; 498, 1-2 ; 1
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Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam.
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Erscheinungsdatum:01.01.2006
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Format / Umfang:1 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 530.4275
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 530.4275 -
Datenquelle:
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The 3rd Asian Conference on Chemical Vapor Deposition (3rd Asian-CVD), Taipei, Taiwan, November 12–14, 2004Feng, Zhe Chuan / Chen, Chia-Fu / Kuo, Cheng-Tzu / Williams, Ken / Shan, Wei et al. | 2005
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Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperatureGu, Jian-De / Chen, Pei-Li et al. | 2005
- 9
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Growth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor depositionWuu, Dong-Sing / Lien, Shui-Yang / Mao, Hsin-Yuan / Wu, Bing-Rui / Hsieh, In-Cha / Yao, Pin-Chuan / Wang, Jui-Hao / Chen, Wen-Chun et al. | 2005
- 14
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Low-temperature fabrication of silicon films by large-area microwave plasma enhanced chemical vapor depositionGu, Jian-De / Chen, Pei-Li et al. | 2005
- 20
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Characterization of sputter-induced temperature effect in fluorine doped SiO2 film deposition by high-density plasma chemical vapor depositionHsiao, Wen-Chu / Liu, Chuan-Pu / Wang, Ying-Lang et al. | 2005
- 25
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Rate analysis of chemical vapor deposition by use of the thin tubular reactorKawase, Motoaki / Miura, Kouichi et al. | 2005
- 30
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Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphologySugiyama, Masakazu / Iino, Tomohisa / Nakajima, Tohru / Tanaka, Takeshi / Egashira, Yasuyuki / Yamashita, Kohichi / Komiyama, Hiroshi / Shimogaki, Yukihiro et al. | 2005
- 36
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Comparison of characteristics and integration of copper diffusion-barrier dielectricsWang, T.C. / Cheng, Y.L. / Wang, Y.L. / Hsieh, T.E. / Hwang, G.J. / Chen, C.F. et al. | 2005
- 43
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A novel two-step MOCVD for producing thin copper films with a mixture of ethyl alcohol and water as the additiveLee, Hsin-Hung / Lee, Chiapyng / Kuo, Yu-Lin / Yen, Yee-Wen et al. | 2005
- 50
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Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technologyChen, K.W. / Wang, Y.L. / Liu, C.P. / Chang, L. / Li, F.Y. et al. | 2005
- 56
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Mechanism for Cu void defect on various electroplated film conditionsFeng, H.P. / Cheng, M.Y. / Wang, Y.L. / Chang, S.C. / Wang, Y.Y. / Wan, C.C. et al. | 2005
- 60
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High-selectivity damascene chemical mechanical polishingChiu, Shao-Yu / Wang, Ying-Lang / Liu, Chuan-Pu / Chang, Shih-Chieh / Hwang, Gwo-Jen / Feng, Ming-Shiann / Chen, Chia-Fu et al. | 2005
- 64
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Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technologyChen, K.W. / Wang, Y.L. / Chang, L. / Li, F.Y. / Hwang, G.J. et al. | 2005
- 70
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Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDsChang, Ta-Shan / Chang, Ting-Chang / Liu, Po-Tsun / Chang, Tien-Shan / Yeh, Feng-Sheng et al. | 2006
- 75
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Effect of NH3 on the fabrication of HfN as gate-electrode using MOCVDWang, W.W. / Nabatame, T. / Shimogaki, Y. et al. | 2005
- 80
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Preparation and characterization of indium oxide film by electrochemical depositionHo, W.H. / Yen, S.K. et al. | 2005
- 85
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Uniform CoSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layerChang, Juin-Jie / Hsieh, Tsung-Eong / Liu, Chuan-Pu / Wang, Ying-Lang et al. | 2005
- 90
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Oxide-mediated formation of epitaxy silicide on heavily doped Si surfaces and narrow width active regionChen, Yen-Ming / Tu, George C. / Wang, Ying-Lang et al. | 2005
- 94
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Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxyPark, Chinho / Yeo, Seokki / Kim, Jin-ho / Yoon, Deoksun / Anderson, Timothy J. et al. | 2005
- 100
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Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growthHsu, Yu Jen / Hong, Lu Sheng / Jiang, Jyh-Chiang et al. | 2005
- 108
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Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor depositionYu, J.W. / Lin, H.C. / Feng, Z.C. / Wang, L.S. / Tripathy, S. / Chua, S.J. et al. | 2005
- 113
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High hole concentration of p-type InGaN epitaxial layers grown by MOCVDChen, Po-Chang / Chen, Chin-Hsiang / Chang, Shoou-Jinn / Su, Yan-Kuin / Chang, Ping-Chuan / Huang, Bohr-Ran et al. | 2005
- 118
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Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor depositionFeng, Z.C. / Liu, W. / Chua, S.J. / Yu, J.W. / Yang, C.C. / Yang, T.R. / Zhao, J. et al. | 2005
- 123
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Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor depositionChen, Jeng-Hung / Feng, Zhe-Chuan / Tsai, Hung-Ling / Yang, Jer-Ren / Li, P. / Wetzel, C. / Detchprohm, T. / Nelson, J. et al. | 2005
- 128
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Tuning the emitting wavelength of InGaN/GaN superlattices from blue, green to yellow by controlling the size of InGaN quasi-quantum dotLai, Yen-Lin / Liu, Chuan-Pu / Chen, Zheng-Quan et al. | 2005
- 133
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High UV/visible rejection contrast AlGaN/GaN MIS photodetectorsChang, Ping-Chuan / Chen, Chin-Hsiang / Chang, Shoou-Jinn / Su, Yan-Kuin / Yu, Chia-Lin / Huang, Bohr-Ran / Chen, Po-Chang et al. | 2005
- 137
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Growth and characterization of chemical-vapor-deposited zinc oxide nanorodsWu, Chia Ling / Chang, Li / Chen, Hou Guang / Lin, Chih Wei / Chang, Te Fu / Chao, Yen Cheng / Yan, Jhih Kun et al. | 2005
- 142
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Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath methodCheng, Hua-Chi / Chen, Chia-Fu / Lee, Cheng-Chung et al. | 2005
- 146
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A study of Love wave devices in ZnO/Quartz and ZnO/LiTaO3 structuresChang, Ren-Chuan / Chu, Sheng-Yuan / Hong, Cheng-Shong / Chuang, Yu-Ting et al. | 2005
- 152
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The influence of magnesium and hydrogen introduction in sputtered zinc oxide thin filmsHuang, Jun-Hang / Liu, Chuan-Pu et al. | 2005
- 158
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Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor depositionYang, Tzuen-Rong / Cheng, Yukun / Wang, Jyun-Bi / Chuan Feng, Zhe et al. | 2005
- 163
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Role of surface diffusion during selective area MOVPE growth of InPWaki, Noriaki / Nakano, Takayuki / Sugiyma, Masakazu / Nakano, Yoshiaki / Shimogaki, Yukihiro et al. | 2006
- 167
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Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor depositionFeng, Z.C. / Lin, H.C. / Zhao, J. / Yang, T.R. / Ferguson, I. et al. | 2005
- 174
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Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor depositionShioda, Tomonari / Doi, Takeshi / Al Amin, Abdullah / Song, Xue-Liang / Sugiyama, Masakazu / Shimogaki, Yukihiro / Nakano, Yoshiaki et al. | 2005
- 179
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Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealingZhao, J. / Chen, J. / Feng, Z.C. / Chen, J.L. / Liu, R. / Xu, G. et al. | 2005
- 183
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Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVDHsu, M.-Y. / Tang, S.-F. / Chiang, C.-D. / Su, C.-C. / Wang, L.-C. / Kuo, C.-T. et al. | 2005
- 188
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Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dotsKong, Ling Min / Cai, Jia Fa / Wu, Zheng Yun / Gong, Zheng / Niu, Zhi Chuan / Feng, Zhe Chuan et al. | 2005
- 193
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Template-assisted synthesis of mesoporous tubular carbon nanostructure by chemical vapor infiltration methodLo, A.Y. / Huang, S.J. / Chen, W.H. / Peng, Y.R. / Kuo, C.T. / Liu, S.B. et al. | 2006
- 198
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Low temperature growth of carbon nanotubes on printing electrodes by MPCVDChen, Kuang-Chung / Chen, Chia-Fu / Chiang, Jih-Shun / Hwang, Chian-Liang / Chang, Yu-Yang / Lee, Cheng-Chung et al. | 2005
- 202
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High efficiency microwave digestion purification of multi-walled carbon nanotubes synthesized by thermal chemical vapor depositionChen, Chieng-Ming / Chen, Mi / Peng, Yong-Wang / Yu, Hung-Wei / Chen, Chia-Fu et al. | 2005
- 206
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Growth of hydrogen-free diamond-like carbon films by a particle-free hollow-cathode arc ion plating systemCheng, Chiao-Yang / Hong, Franklin Chau-Nan et al. | 2005
- 212
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Diamond growth on an array of seeds: The revolution of diamond productionSung, James C. / Sung, Michael / Sung, Emily et al. | 2005
- 220
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Mechanical and optical properties of diamond-like carbon thin films deposited by low temperature processSu, C.H. / Lin, C.R. / Chang, C.Y. / Hung, H.C. / Lin, T.Y. et al. | 2005
- 224
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Interface study of diamond films grown on (100) siliconWang, Sea-Fue / Wang, Yuh-Ruey / Pu, Jui-Chen / Sung, James C. et al. | 2005
- 230
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Chemical vapor deposition of uniform and high-quality diamond films by bias-enhanced nucleation methodYan, Jhih-Kun / Chang, Li et al. | 2005
- 235
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Effects of acetylene on property of plasma amorphous carbon filmsLouh, S.P. / Wong, C.H. / Hon, M.H. et al. | 2005
- 240
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Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol processNakasa, Akihiko / Adachi, Mami / Usami, Hisanao / Suzuki, Eiji / Taniguchi, Yoshio et al. | 2005
- 244
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Short-diode like diffusion capacitance of organic light emission devicesTsai, Mei-Na / Chang, T.C. / Liu, Po-Tsun / Ko, Chung-Wen / Chen, Che-jen / Lo, Kang-mien et al. | 2005
- 249
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Improved efficiency of organic light-emitting diodes using CoPc buffer layerKao, Po-Ching / Chu, Sheng-Yuan / You, Zong-Xian / Liou, S.J. / Chuang, Chan-An et al. | 2005
- 254
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Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and waterLim, Gyeong Taek / Kim, Do-Heyoung et al. | 2006
- 259
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Sol–hydrothermal preparation and photocatalysis of titanium dioxideSu, C. / Tseng, C.-M. / Chen, L.-F. / You, B.-H. / Hsu, B.-C. / Chen, S.-S. et al. | 2005
- 266
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Thickness dependence of electrical and optical properties of sputtered nickel oxide filmsChen, Hao-Long / Lu, Yang-Ming / Hwang, Weng-Sing et al. | 2005
- 271
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Effect of annealing treatments on the microstructure of (Zr0.8Sn0.2)TiO4 thin films sputtered on siliconHsu, Cheng-Hsing / Huang, Cheng-Liang et al. | 2005
- 277
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In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by MOCVDAsano, Gouji / Satake, Tsukasa / Ohtsuki, Kunio / Funakubo, Hiroshi et al. | 2005
- 282
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Width-dependent anomalous CoSix sheet resistance change by Ti and TiN capping processChen, Yen-Ming / Tu, George C. / Wang, Ying-Lang et al. | 2005
- 286
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Phase transformation of tantalum on different dielectric films with plasma treatmentHuang, Chun-Chieh / Wang, Ying-Lang / Chang, Shih-Chieh / Hwang, Gwo-Jen / Huang, Jow-Lay et al. | 2005
- 289
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Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias powerHsiao, Wen-Chu / Liu, Chuan-Pu / Wang, Ying Lang / Cheng, Yi-Lung et al. | 2005
- 294
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Author Index of Volume 498 Issues 1–2| 2006
- 296
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Subject Index of Volume 498 Issues 1–2| 2006
- iii
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Editorial Board| 2006