Advanced processing of semiconductor devices : 23 - 25 March 1987, Bay Point, Florida (Englisch)
- Neue Suche nach: Mukherjee, Sayan D.
1987
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ISBN:
- Konferenzband / Print
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Titel:Advanced processing of semiconductor devices : 23 - 25 March 1987, Bay Point, Florida
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Beteiligte:
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Kongress:Conference on Advanced Processing of Semiconductor Devices ; 1987 ; Bay Point, Fla.
Symposium on Advances in Semiconductors and Semiconductor Structures ; 1987 ; Bay Point, Fla. -
Erschienen in:
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsort:Bellingham, Wash.
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Erscheinungsdatum:1987
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Format / Umfang:IX, 366 S
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Anmerkungen:Ill., graph. Darst
Literaturangaben -
ISBN:
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Medientyp:Konferenzband
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.3815/2
- Weitere Informationen zu Dewey Decimal Classification
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Schlagwörter:
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Klassifikation:
DDC: 621.3815/2 -
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Keynote Address Elemental And Compound Semiconductor Devices Today And Beyond: Influence Of Advanced Epitaxial ProcessesWang, Kang L. et al. | 1987
- 14
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Invited Paper The Formation Of Shallow P+N Junctions Using RTA Of BF2+ And B+ Implanted SiHolland, O . W. / Alvis, J. R. / Hance, Cotton et al. | 1987
- 20
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Effects Of Rapid Thermal Processing On Device ReliabilityLee, S. K. / Shih, D. K. / Ku, Y. H. / Louis, E. / Kwong, D. L. / Lee, C. O. et al. | 1987
- 26
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Deep Level Generation Centres In Low Temperature Annealed Pre-Amorphised SiliconBrotherton, S. D. / Ayres, J. R. / Goldsmith, B. J. / Gill, A. et al. | 1987
- 33
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Invited Paper Is SOI Ready For Circuits Applications?Bensahel, D. / Dutartre, D. / Haond, M. et al. | 1987
- 49
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Planarization Of Multilevel Metalization Processes: A Critical ReviewKuo, Yue et al. | 1987
- 61
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Formation Of Shallow Junctions With TiNxOy/TiSi2Ohmic Contacts For Self-Aligned Silicide TechnologyKu, Y. H. / Louis, E. / Lee, S. K. / Shih, D. K. / Kwong, D. L. / Lee, C. O. / Yeargain, J. R. et al. | 1987
- 69
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Transient-Enhanced Diffusion In Ion-Implanted SiliconPennycook, S. J. / Culbertson, R. J. et al. | 1987
- 77
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Formation And Nondestructive Characterization Of Ion Implanted Soi LayersNarayan, J. / El Ghor, M. / Kim, S. Y. / Vedam, K. / Manukonda, R. / Pennycook, S. J. et al. | 1987
- 83
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Growth And Characterization Of Epitaxial Layers Of Ge On Si SubstratesFathy, D. / White, C. W. / Holland, O. W. et al. | 1987
- 90
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Invited Paper Photochemical Cleaning And Epitaxy Of SiNara, Y. / Yamazaki, T. / Sugii, T. / Sugino, R. / Ito, T. / Ishikawa, H. et al. | 1987
- 98
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Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound SemiconductorsHu, Evelyn L. / Coldren, Larry A. et al. | 1987
- 110
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Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and AlxGa1_xAS (X=0.76) Using BC13/CC12F2/He At Equal RatesMukherjee, Sayan D. et al. | 1987
- 118
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Invited Paper Novel Chemistry For High Quality, Low Hydrogen PECVD Silicon Nitride FilmsIbbotson, D. E. / Chang, C. P. / Flamm, D. L. / Mucha, J. A. et al. | 1987
- 126
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Formation Of Submicron Silicon-Nitride Patterns By Lift-Off Method Using ECR-CVDShikata, S. / Hayashi, H. / Takahashi, H. / Yoshida, K. et al. | 1987
- 130
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Silicon Nitride For Gallium Arsenide Integrated CircuitsNagle, J / Morgan, David V. et al. | 1987
- 140
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Modeling Of Energy And Mass Transport In Laser-Assisted CVD I: Surface MorphologySkouby, D. C. / Jensen, K. F. et al. | 1987
- 149
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Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch RatesSchneider, M. / Colvard, C. / Alavi, K. / Kohn, E. et al. | 1987
- 158
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Growth And Characterization Of Wide Gap II-VI HeterostructuresGunshor, R. L. / Kolodziejski, L. A. / Otsuka, N. / Nurmikko, A. v. et al. | 1987
- 171
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Optical Absorption In Low P-Type Hg0.8Cd0.2Te AlloysHuang, Changhe / Yu, Zhenzhong / Tang, Dingyuan et al. | 1987
- 177
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Impurity Induced Disordering Of Heterojunction Interfaces: Phenomenology And Laser Device ApplicationsThornton, R. L. / Burnham, R. D. / Holonyak,Jr., N. / Epler, J. E. / Paoli, T. L. et al. | 1987
- 185
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Al1-XGaxAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of MechanismsDe Cooman, B. C. / Carter, C. B. / Ralston, J. R. et al. | 1987
- 194
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Lateral Patterning Of Quantum Well Structures Through Compositional MixingDobisz, E. A. / Craighead, H. G. / Schwarz, S. A. / Lin, P. S. D. / Kash, K. / Schiavone, L. M. / Scherer, A. / Harbison, J. P. / Tell, B. et al. | 1987
- 203
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Self-Aligned-Gate Digital AlGaAs/GaAs Modulation-Doped Field Effect Transistor (MODFET) Processing And Short Channel EffectsLepore, A. N. / Radulescu, D. C. / Schaff, w. J. / Tasker, P. J. / Eastman, L. F. et al. | 1987
- 207
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Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICsLin, Min-Shyong / Chou, Hen-Chang et al. | 1987
- 216
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Implant Profiles In GaP, GaAs, InP, And InSb: Influence Of Furnace And Rapid Thermal AnnealingWilson, R . G. / Novak, S. w. et al. | 1987
- 218
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High Temperature Stable Metal Contacts On GaAs Based On WSi2 As Diffusion Barrier, Characterized By XPS And Electrical MeasurementsWiirfl, Joachim / Gupta, Ram P. / Hartnagel, Hans L. et al. | 1987
- 224
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Invited Paper Recent Progress In Optoelectronic Integrated Circuits (OEICs)Wada, Osamu et al. | 1987
- 236
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Invited Paper Grating Surface Emitting, Semiconductor LasersEvans, G. A. / Hammer, J. M. / Carlson, N. W. et al. | 1987
- 242
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Reactive Ion Etching (RIE) Of Gratings In Inp For Distributed Feedback (DFB) Lasers Using An Intermediate Dielectric LayerTarof, L. / Fox, K. et al. | 1987
- 250
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Invited Paper Characterization Of Interfaces Formed By Interrupted OMVPE GrowthHasegawa, Hideki / Ikeda, Eiji / Ohno, Hideo et al. | 1987
- 262
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High Power AlGaAs/GaAs Single Quantum Well Lasers With Chemically Assisted Ion Beam Etched MirrorsTihanyi,, P. / Wagner, D. K. / Roza, A. J. .. / Vollmer, H. J. / Harding, C. M. / Davis, R. J. / Wolf, E. D. et al. | 1987
- 266
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Beam-Lead Hybridization Technology For Focal Plane Infrared DetectorsAmeurlaine, J. / Gauthier, A. / Langle, P. / Salaville, A. et al. | 1987
- 272
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Atomistic Simulation Of Stability Properties And Growth Of Strained Layer StructuresTaylor, Paul A. / Dodson, Brian W. et al. | 1987
- 281
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Effects Of Growth Temperature And Off Oriented (100) Si Substrate On Properties Of CdTe Film Grown By MOCVDLin, Min-Shyong / Chou, Rey-Lin / Chou, Kan-Sen et al. | 1987
- 286
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On The Gate Capacitance Of MOS Structures Of n-Channel Inversion Layers On Ternary Semiconductors In The Presence Of A Quantizing Magnetic FieldBiswas, S. N. / Ghatak, K. P. et al. | 1987
- 296
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Invited Paper GaAs Self-Aligned MESFET TechnologiesHirayama, Masahiro / Ikegami, Tetsuhiko et al. | 1987
- 309
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High Transconductance OGFETsEbert, G. / Colquhoun, A. et al. | 1987
- 314
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Invited Paper Complementary HEMT Logic: Problems Of Threshold Voltage Control And Their SolutionsMatsumoto, Kazuhiko et al. | 1987
- 327
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A High-Transconductance AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Fet With Pd-Buried Gate StructureInoue, K. / Nishii, K. / Bando, K. / Tezuka, A. / Matsuno, T. / Onuma, T. et al. | 1987
- 335
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Invited Paper Advances In The Technology For The Permeable Base TransistorHollis, M, A. / Nichols, K. B. / Murphy, R. A. / Bozler, C. O. et al. | 1987
- 348
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Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT)Shibatomi, A. / Yamaguchi, Y. / Futatsugi, T. / Muto, S. / Yokoyama, N. et al. | 1987
- 352
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Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InPMartin, E. A. / Pande, K. P. / diForte-Poisson, M. A. / Brylinski, C. / Colomer, G. / Razeghi, M. et al. | 1987
- 357
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Engineering On NPN AlGaAs Heterojunction Bipolar TransistorsChen, Chung-Zen / Lee, Si-Chen / Lin, Hao-Hsiung et al. | 1987