A NEW GETTERING OF Si WAFER BY EXCIMER LASER IRRADIATION (Japanisch)
- Neue Suche nach: Takemura, K.
- Neue Suche nach: Toyokawa, F.
- Neue Suche nach: Ohshita, Y.
- Neue Suche nach: Ishitani, A.
- Neue Suche nach: Takemura, K.
- Neue Suche nach: Toyokawa, F.
- Neue Suche nach: Ohshita, Y.
- Neue Suche nach: Ishitani, A.
In:
Handōtai, Shūseki Kairo Gijutsu Dai 31kai Shinpojiumu
; 109-114
;
1986
- Aufsatz (Konferenz) / Print
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Titel:A NEW GETTERING OF Si WAFER BY EXCIMER LASER IRRADIATION
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Beteiligte:Takemura, K. ( Autor:in ) / Toyokawa, F. ( Autor:in ) / Ohshita, Y. ( Autor:in ) / Ishitani, A. ( Autor:in )
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Kongress:Handōtai, Shūseki Kairo Gijutsu Shinpojiumu ; 31. ; 1986 ; Tokio
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Erschienen in:
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Verlag:
- Neue Suche nach: Shadan Hōjin Denki Kagaku Kyōkai Denshi Zairyō Iinkai
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Erscheinungsort:Tōkyō
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Erscheinungsdatum:1986
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Japanisch
- Neue Suche nach: 53.56
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
BKL: 53.56 Halbleitertechnologie -
Datenquelle:
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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THE RELATIONSHIP BETWEEM RESIST CONTRAST AND OPTICAL PROPERTIES OF CEL DYESUchino, S. / Ueno, T. / Iwayanagi, T. / Shirai, S. / Noriuchi, N. et al. | 1986
- 7
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NEW HEAT RESISTANT POSITIVE WORKING PHOTORESIST — MOSTKonishi, S. / Kurata, N. / Furuta, A. / Hanabata, M. et al. | 1986
- 13
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DEVELOPMENT AND APPLICATION OF SIMULATION SYSTEM FOR EVALUATING ZLECTRON BEAM WRITING AND DEVELOPMENT PROCESS SEEDSuga, O. / Okazaki, S. / Murai, F. / Matsuzawa, T. / Moniwa, A. / Aoki, E. et al. | 1986
- 19
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A FAST MONTE CARLO SIMULATION FOR ELECTRON - BEAM LITHOGRAPHY BY A SUPERCOMPUTERHidaka, T. / Hasegawa, S. / lida, Y. et al. | 1986
- 25
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LARGE FIELD WRITING CHARACTERISTICS OF EB57Moriya, S. / Miyoshi, K. / Harada, K. et al. | 1986
- 31
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ALIGNMENT ACCURACY EVALUATION FOR WAFER STEPPERKomai, M. / Yoshida, T. / Nishizawa, K. / Sakiyama, K. et al. | 1986
- 37
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CHARACTERISTICS OF MOLYBDENUM SILICIDE MASK (CHARACTERISTICS OF THIN FILM)Chiba, A. / Matsuda, S. / Shigetomi, A. / Watakabe, Y. et al. | 1986
- 43
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FORMATION OF SUBMICRON SILICON NITRIDE PATTERNS BY LIFT-OFF METHOD USING ECR-CVDShikata, S. / Hayashi, H. / Takahashi, H. / Yoshida, K. et al. | 1986
- 49
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ECR PLASMA CVDMatsuo, S. et al. | 1986
- 55
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CHARACTERIZATION OF SILICON NITRIDE FILMS BY USINIG ECR PLASMA - ENHANCED CHEMICAL VAPAR DEPOSITIONDoki, M. / Takasaki, K. / Fulino, K. / Ban, Y. et al. | 1986
- 61
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a — Si : H FILMS PREPARED BY ECR PLASMA ENHANCED CVDHine, S. / Yamamoto, H. / Yamakawa, S. / Tsubouchi, N. / Miyamura, M. et al. | 1986
- 67
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DENSIFICATION MECHANISM IN MICROWAVE-PLASMA — ACTIVATED DEPOSITION OF SiO2 FILMMurakamıi, E. / Kimura, S. / Warabisako, T. et al. | 1986
- 73
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SELF ALIGNED CONTACT BY SILICON SELECTIVE EPITAXIAL GROWTHSamata, S. / Shibata, H. / Matsuno, T. / Sasaki, H. / Matsushita, Y. / Ohta, T. et al. | 1986
- 79
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LASER -INDUCED MELTING OF PREDEPOSITED IMPURITY DOPING (LIMPID)Usui, S. / Sameshima, T. / Sekiya, M. et al. | 1986
- 85
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SELECTIVE DEPOSITION OF SiO2 FILM BY LASER INDUCED CVDHiura, Y. / Nishiyama, I. / Kishida, S. et al. | 1986
- 91
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FORMATION OF SHALLOW JUNCTION BY RAPID THERMAL ANNEALINGUoochi, Y. / Maeda, M. et al. | 1986
- 97
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OBLIQUE-ROTATE ION IMPLANTATION TECHNIQUE AND IT’S APPLICATION TO VLSI DEVICESOhsaki, S. / Nagatomo, M. / Higashitani, K. / Takahashi, T. / Hirao, T. et al. | 1986
- 103
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ETCHING CHARACTERISTIC OF SUBMICRON TRENCHKase, M. / Kanamori, J. / Sogo, K. et al. | 1986
- 109
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A NEW GETTERING OF Si WAFER BY EXCIMER LASER IRRADIATIONTakemura, K. / Toyokawa, F. / Ohshita, Y. / Ishitani, A. et al. | 1986
- 115
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HIGH OXYGEN -CONTENT MCZ SILICON CRYSTALSFutagami, M. / Isawa, N. et al. | 1986
- 121
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LOW TEMPERATURE PLANALIZATION TECHNIQUE FOR MULTILAYER INTERCONNECTIONS IN GaAs LSI PROCESSMiyazaki, M. / Isobe, Y. / Yanazawa, H. et al. | 1986
- 129
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CHEMICAL STRUCTURE OF Si — SiO2 INTERFACEHattori, T. et al. | 1986
- 135
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GENERATION OF SURFACE STATES AND TRAPSUchida, H. / Tanaka, H. / Ajioka, T. et al. | 1986
- 141
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DETECTION OF DEFECTS IN SiO2 THIN FILM BY AR — ANNEALINGKobayashi, M. / Ogawa, T. / Wada, K. et al. | 1986
- 147
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ELECTRICAL AND CHEMICAL CHARACTERISTICS OF NITRIDED OXIDE PREPARED BY RAPID THERMAL ANNEALINGNaito, Y. / Hori, T. / Iwasaki, H. / Esaki, H. et al. | 1986
- 153
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DRY OXIDATION ON HEAVILY ARSENIC — DOPED SILICONKuroda, S. / Sakamoto, K. / Nishi, K. / Ueda, J. et al. | 1986