The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices (Englisch)
- Neue Suche nach: Opondo, N.
- Neue Suche nach: Cooper, J. A.
- Neue Suche nach: Liao, H. J.
- Neue Suche nach: Chen, W. N.
- Neue Suche nach: Morisette, D.
- Neue Suche nach: Opondo, N.
- Neue Suche nach: Cooper, J. A.
- Neue Suche nach: Liao, H. J.
- Neue Suche nach: Chen, W. N.
- Neue Suche nach: Morisette, D.
In:
Silicon carbide and related materials 2019
; 738-750
;
2020
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices
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Beteiligte:Opondo, N. ( Autor:in ) / Cooper, J. A. ( Autor:in ) / Liao, H. J. ( Autor:in ) / Chen, W. N. ( Autor:in ) / Morisette, D. ( Autor:in )
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Kongress:International Conference on Silicon Carbide and Related Materials ; 18. ; 2019 ; Kyōto
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Erschienen in:
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Verlag:
- Neue Suche nach: Trans Tech Publications Ltd
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Erscheinungsort:Baech
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Erscheinungsdatum:2020
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Datenquelle:
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Fast 4H-SiC Bulk Growth by High-Temperature Gas Source MethodTokuda, Y. / Hoshino, N. / Kuno, H. / Uehigashi, H. / Okamoto, T. / Kanda, T. / Ohya, N. / Kamata, I. / Tsuchida, H. et al. | 2020
- 14
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Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition MethodOkamoto, T. / Kanda, T. / Tokuda, Y. / Ohya, N. / Betsuyaku, K. / Hoshino, N. / Kamata, I. / Tsuchida, H. et al. | 2020
- 20
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Investigation of Carbon Inclusions in SiC Crystals Grown by PVT MethodXie, X. J. / Yu, J. Y. / Yang, X. L. / Chen, X. F. / Xu, X. G. / Hu, X. B. / Liu, X. T. / Liu, D. et al. | 2020
- 26
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Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling ProcessPark, J. H. / Jang, B. K. / Choi, J. W. / Yang, E. / Kim, J. G. / Ko, S. K. / Kyun, M. O. / Ku, K. R. / Kim, D. S. / Lee, W . J. et al. | 2020
- 32
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Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC WaferJang, B. K. / Park, J. H. / Choi, J. W. / Yang, E. / Kim, J. G. / Ko, S. K. / Kyun, M. O. / Ku, K. R. / Jang, Y. S. / Lee, W. J. et al. | 2020
- 37
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Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer ProductionManning, I. / Matsuda, Y. / Chung, G. / Sanchez, E. / Dudley, M. / Ailihumaer, T. / Raghothamacher, B. et al. | 2020
- 44
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Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC CrystalsAilihumaer, T. / Raghothamachar, B. / Dudley, M. / Chung, G. / Manning, I. / Sanchez, E. et al. | 2020
- 51
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Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiCEun, T. H. / Yeo, I. G. / Kim, J. Y. / Lee, S. S. / Seo, H. S. / Chun, M. C. / Hong, S. K. et al. | 2020
- 57
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An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity AnalysisPiluso, N. / Rinaldi, S. / Lorenti, S. / Bassi, A. / Severino, A. / Coffa, S. et al. | 2020
- 63
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X-Ray Topography Characterization of Large Diameter AIN Single Crystal SubstratesDalmau, R. / Britt, J. / Fang, H. Y. / Raghothamachar, B. / Dudley, M. / Schlesser, R. et al. | 2020
- 71
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Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current ApplicationsItoh, H. / Enokizono, T. / Miyase, T. / Hori, T. / Wada, K. / Doi, H. / Furumai, M. et al. | 2020
- 78
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Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD ToolDaigo, Y. / Ishiguro, A. / Ishii, S. / Kobayashi, T. / Moriyama, Y. et al. | 2020
- 84
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Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD ToolDaigo, Y. / Ishiguro, A. / Ishii, S. / Kobayashi, T. / Moriyama, Y. et al. | 2020
- 91
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Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCI Gas with High CI/Si Ratio in CVD ProcessDaigo, Y. / Ishiguro, A. et al. | 2020
- 96
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Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and AlFerro, G. / Chaussende, D. et al. | 2020
- 102
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Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) PseudosubstratesReiprich, J. / Isaac, N. A. / Schlag, L. / Hopfeld, M. / Pezoldt, J. / Jacobs, H. O. et al. | 2020
- 113
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Prospects of Bulk Growth of 3C-SiC Using Sublimation GrowthWellmann, P. J. / Schuh, P. / Kollmuss, M. / Schöler, M. / Steiner, J. / Zielinski, M. / Maucen, M. / Via, F. La et al. | 2020
- 120
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3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and StressVia, F. La / Mauceri, M. / Scuderi, V. / Calabretta, C. / Zimbone, M. / Anzalone, R. et al. | 2020
- 126
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Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiCZeghbroeck, B. Van / Brow, R. / Borsa, T. / Bobela, D. et al. | 2020
- 132
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Exploration of Solid Phase Epitaxy of 3C-SiC on SiliconZielinski, M. / Monnoye, S. / Mank, H. / Torregrosa, F. / Grosset, G. / Spiegel, Y. / Portail, M. / Michon, A. et al. | 2020
- 139
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Mono-Versus Poly-Crystalline SiC for Nuclear ApplicationsHuang, X. / Yeghoyan, T. / Gavarini, S. / Souliere, V. / Millard-Pinard, N. / Ferro, G. et al. | 2020
- 145
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Microscopic Identification of Surface Steps on SiC by Density-Functional CalculationsSeino, K. / oshiyama, A. et al. | 2020
- 155
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Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal TechnologyRusch, O. / Hellinger, C. / Moult, J. / Corcoran, Y. / Erlbacher, T. et al. | 2020
- 161
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Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their SizeNakanishi, Y. / Mukai, R. / Matsuyama, S. / Yamauchi, K. / Sano, Y. et al. | 2020
- 167
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Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide WaferKawasaki, R. / Irikura, K. / Habuka, H. / Takahashi, Y. / Kato, T. et al. | 2020
- 173
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Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and NitrogenIrikura, K. / Kawasaki, R. / Habuka, H. / Takahashi, Y. / Kato, T. et al. | 2020
- 180
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Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using ChloridesMizushima, I. / Habuka, H. et al. | 2020
- 186
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SiC Epitaxial Reactor Cleaning by CIF3 Gas with the Help of Reaction HeatKurashima, K. / Hayashi, M. / Habuka, H. / Ito, H. / Mitani, S. I. / Takahashi, Y. et al. | 2020
- 193
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Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed CrystalsTitov, A. / Walters, A. / Sasai, H. / Shindo, T. et al. | 2020
- 199
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A New Permanganate-Free Slurry for GaN-SiC CMP ApplicationsFang, T. / Chen, P. C. / Lee, M. H. et al. | 2020
- 206
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Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric ConditionMatsumae, T. / Kurashima, Y. / Umezawa, H. / Takagi, H. et al. | 2020
- 215
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Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction RegionMatsuura, H. / Nishihata, R. / Takeshita, A. / Ogawa, K. / Imamura, T. / Takano, K. / Okuda, K. / Hidaka, A. / Ji, S. Y. / Eto, K. et al. | 2020
- 224
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Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiCHidaka, A. / Takeshita, A. / Ogawa, K. / Imamura, T. / Takano, K. / Okuda, K. / Matsuura, H. / Ji, S. Y. / Eto, K. / Mitani, T. et al. | 2020
- 231
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Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and ElectronsKozlovski, V. V. / Korolkov, O. / Lebedev, A. A. / Toompuu, J. / Sleptsuk, N. et al. | 2020
- 237
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Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCYV)Savtchouk, A. / Wilson, M. / D'Amico, J. / Almeida, C. / Lagowski, J. et al. | 2020
- 243
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Wurtzite SiC Formation in Plastic Deformed 3C and 6HPezoldt, J. / Kalnin, A. A. et al. | 2020
- 249
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Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical SimulationSugiura, T. / Takahashi, N. / Nakano, N. et al. | 2020
- 256
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SiC Natural and Artificial Superlattices for the Implementation of the Bloch Oscillation Process: A Comparative AnalysisSankin, V. I. / Petrov, A. G. / Shkrebiy, P. P. / Kazarova, O. P. / Lebedev, A. A. et al. | 2020
- 265
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Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen ConcentrationsTanaka, D. / Lu, W. F. / Kamiyama, S. / Iwaya, M. / Takeuchi, T. / Akasaki, I. et al. | 2020
- 272
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Resistivity Measurement of P*-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic EllipsometryIshiji, K. / Kawado, S. / Hirai, Y. / Nagamachi, S. et al. | 2020
- 278
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Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiCZubov, L. V. Shakhov, A. A. Lebedev, N. V. Seredova, S. P. Lebedev, V. V. Kozlovski, A. V. / Nikitina, I. P. et al. | 2020
- 284
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Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis TechniqueKim, J. G. / Yoo, W. S. / Kim, D. S. / Lee, W. J. et al. | 2020
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Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)Sonneville, C. / Planson, D. / Phung, L. V. / Bevilacqua, P. / Asllani, B. et al. | 2020
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Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast MappingKocher, M. / Schlichting, H. / Kallinger, B. / Rommel, M. / Bauer, A. J. / Erlbacher, T. et al. | 2020
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A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double ResonanceWaskiewicz, R. J. / Manning, B. R. / McCrory, D. J. / Lenahan, P. M. et al. | 2020
- 314
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Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron MicroscopyOhira, K. / Isshiki, T. / Sako, H. / Hasegawa, M. / Kobayashi, K. / Onuki, K. et al. | 2020
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From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiCLeonard, R. / Conrad, M. / Brunt, E. Van / Giles, J. / Hutchins, E. / Balkas, E. et al. | 2020
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Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiCAlfieri, G. / Kranz, L. / Mihaila, A. et al. | 2020
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Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal TreatmentYamazaki, Y. Chiba. 7. / Sato, S. I. / Makino, T. / Yamada, N. / Satoh, T. / Hijikata, Y. / Ohshim, T. et al. | 2020
- 343
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Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn DiodesYamazaki, Y. / Chiba, Y. / Sato, S. I. / Makino, T. / Yamada, N. / Satoh, T. / Kojima, K. / Hijikata, Y. / Tsuchida, H. / Hoshino, N. et al. | 2020
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Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiCNarahara, T. / Sato, S. I. / Kojima, K. / Yamazaki, Y. / Hijikata, Y. / Ohshima, T. et al. | 2020
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Near Infrared Photoluminescence of NcVsi Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged ParticlesSato, S. I. / Narahara, T. / Onoda, S. / Yamazaki, Y. / Hijikata, Y. / Gibson, B. C. / Greentree, A. / Ohshima, T. et al. | 2020
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The Effect of y-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFETAbe, Y. / Umeda, T. / Okamoto, M. / Harada, S. / Yamazaki, Y. / Ohshima, T. et al. | 2020
- 369
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4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection SystemHasegawa, M. / Ohira, K. / Kaneoka, N. / Ogata, T. / Onuki, K. / Kobayashi, K. / Osanai, T. / Masumoto, K. / Senzaki, J. et al. | 2020
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Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC EpilayersNishio, J. / Okada, A. / Ota, C. / Kushibe, M. et al. | 2020
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Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial WaferYang, L. / Zhao, L. X. / Wu, H. W. / Liu, Y. / Ailihumaer, T. / Raghothamachar, B. / Dudley, M. et al. | 2020
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Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate WafersAilihumaer, T. / Peng, H. / Raghothamachar, B. / Dudley, M. / Chung, G. / Manning, I. / Sanchez, E. et al. | 2020
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BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VESudoh, Y. / Kitabatake, M. / Kaneko, T. et al. | 2020
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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten EtchingAnzalone, R. / Severino, A. / Piluso, N. / Coffa, S. et al. | 2020
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TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution GrowthTakahashi, J. / Kawaguchi, K. / Kusunoki, K. / Ueyama, T. / Kamei, K. et al. | 2020
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Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi WafersSako, H. / Ohira, K. / Kobayashi, K. / Isshiki, T. et al. | 2020
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Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch DamageSugiyama, N. / Mitani, T. / Kamata, I. / Kato, T. / Tsuchida, H. / Okumura, H. et al. | 2020
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Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias StressFiorenza, P. / Alessandrino, M. / Carbone, B. / Martino, C. Di / Russo, A. / Saggio, M. / Venuto, C. / Zanetti, E. / Bongiorno, C. / Giannazzo, F. et al. | 2020
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Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Densitv Substrate or an Epitaxial Wafer with an HNDENishihara, Y. / Kamei, K. / Momose, K. / Osawa, H. et al. | 2020
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Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial GrowthAdachi, K. / Kosugi, R. / Ji, S. Y. / Kawada, Y. / Fujisawa, H. / Tomohisa, S. / Miura, N. / Yonezawa, Y. / Okumura, H. et al. | 2020
- 451
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Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge PhotoluminescenceNakanishi, Y. / Noguchi, T. / Nakamura, T. / Ikegami, M. / Kobayashi, K. / Konishi, K. / Ebihara, K. et al. | 2020
- 458
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Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device PerformanceDas, H. / Sunkari, S. / Justice, J. / Pham, H. / Park, G. / Seo, Y. H. et al. | 2020
- 464
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Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperafure ConditionsRugen, S. / Sundaresan, S. / Singh, R. / Kaminski, N. et al. | 2020
- 472
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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability TestSeverino, A. / Anzalone, R. / Piluso, N. / Vitanza, E. / Carbone, B. / Russo, A. / Coffa, S. et al. | 2020
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Evolution of SiOx Shell Layers on SiC-SiOx Core-Shell NanowiresBroggi, A. / Ringdalen, E. / Tangstad, M. et al. | 2020
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Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction DiodesRashid, M. H. / Koel, A. / Rang, T. et al. | 2020
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Defects Characterization of GaN Substrate with Hot Implant ProcessMaekawa, J. / Kawanowa, H. / Aoki, M. / Takahiro, K. / Isshiki, T. et al. | 2020
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Structural Characterization of a Ga2 O3 Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM AnalysisHashimoto, A. / Sako, H. / Sameshima, J. / Nakamura, M. / Kobayashi, T. / Motoyama, S. / Otsuka, Y. et al. | 2020
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AFM Observation of Etch-Pit Shapes on ß-Ga2 O3 (001) Surface Formed by Molten Alkali EtchingOgawa, K. / Ogawa, N. / Kosaka, R. / Isshiki, T. / Aiso, T. / Iyoki, M. / Yao, Y. Z. / Ishikawa, Y. et al. | 2020
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Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in DiamondShikata, S. / Akashi, N. et al. | 2020
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Graphene Quality Assessment Using an Entropy Approach of SEM ImagesHähnlein, B. / Lebedev, S. P. / Eliseyev, I. A. / Davydov, V. Y. / Lebedev, A. A. / Pezoldt, J. et al. | 2020
- 535
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Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiCLim, M. W. / Sledziewski, T. / Rommel, M. / Erlbacher, T. / Kim, H. K. / Kim, S. J. / Shin, H. K. / Bauer, A. J. et al. | 2020
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Surface Treatment of 4H-SiC MOSFET'S Prior to Al2 O3 DepositionIdris, M. I. / Horsfall, A. B. et al. | 2020
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Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer DepositionRenz, A. B. / Vavasour, O. ]. / Gammon, P. M. / Li, F. / Dai, T. / Esfahani, S. / Baker, G. W. C. / Grant, N. E. / Murphy, J. D. / Mawby, P. A. et al. | 2020
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Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFETLee, K. / Seo, Y. H. / Lee, T. / Park, K. S. / Domeij, M. / Allerstam, F. / Neyer, T. et al. | 2020
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4H-SiC Power VDMOSFET Manufacturing Utilizing POCI3 Post Oxidation AnnealingJu, Y. / Bouvet, D. / Stark, R. / Woerle, J. / Grossner, U. et al. | 2020
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Compatibility of POCI3 Gate Process with the Fabrication of Vertical 4H-SiC MOSFETsWatanabe, T. / Noguchi, M. / Tomohisa, S. / Miura, N. et al. | 2020
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Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETsAnders, M. A. / Lenahan, P. M. / Ryan, J. T. et al. | 2020
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Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC InterfaceWoerle, J. / Prokscha, T. / Grossner, U. et al. | 2020
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Profiling with Depth Resolution of Sub-nm for SiOz/ SIC Interface by Dual-Beam TOF-SIMS Combined with SimulationSameshima, J. / Takenaka, A. / Muraji, Y. / Nakata, Y. / Yoshikawa, M. et al. | 2020
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Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N2 Annealing with Conductance MeasurementsZhou, X. / Hitchcock, C. W. / Dahal, R. P. / Pandey, G. / Kupernik, J. / Bhat, I. B. / Chow, T. P. et al. | 2020
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Photo-Assisted Corona-Charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-VSavtchouk, A. / Wilson, M. / D'Amico, J. / Almeida, C. / Hoff, A. / Lagowski, J. et al. | 2020
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Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD SimulationsMatacena, I. / Maresca, L. / Riccio, M. / Irace, A. / Breglio, G. / Daliento, S. et al. | 2020
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Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETsZhou, X. / Hitchcock, C. W. / Tang, P. / Bhat, I. B. / Chow, T. P. et al. | 2020
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Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect MeasurementTakeda, H. / Sometani, M. / Hosoi, T. / Shimura, T. / Yano, H. / Watanabe, H. et al. | 2020
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Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device SimulationYamasue, K. / Yamagishi, Y. / Cho, Y. et al. | 2020
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A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement TechniquePande, P. / Dimitrijev, S. / Haasmann, D. / Moghadam, H. A. / Tanner, P. / Han, J. S. et al. | 2020
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Ultrafast Pulsed /-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETsEkström, M. / Malm, B. G. / Zetterling, C. et al. | 2020
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Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs GrasserBerens, J. / Pobegen, G. / Grasser, T. et al. | 2020
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Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si SubstratesLi, F. / Qiu, S. / Jennings, M. / Mawby, P. et al. | 2020
- 665
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TDDB Lifetime Enhancement in SiC-MOSFETs under Gate-Switching PperationMurakami, E. / Takeshita, T. / Oda, K. et al. | 2020
- 671
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Modeling of Threshold Voltage Hysteresis in SiC MOSFET DeviceCascino, S. / Saggio, M. / Guarnera, A. et al. | 2020
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3x 10/18 - 1 x 10/19 cm - 3 AI+ Ion Implanted 4H-SiC: Annealing Time EffectNipoti, R. / Parisini, A. / Boldrini, V. / Vantaggio, S. / Canino, M. / Sanmartin, M. / Alfieri, G. et al. | 2020
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Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiCLinnarsson, M. K. / Hallén, A. / Vines, L. et al. | 2020
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Ion Implanted Phosphorous for 4H-SiC VDMOSFETSs Source Regions: Effect of the Post Implantation Annealing TimeNipoti, R. / Parisini, A. / Boldrini, V. / Vantaggio, S. / Gorni, M. / Canino, M. / Pizzochero, G. / Camarda, M. / Woerle, J. / Grossner, U. et al. | 2020
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4H-SiC MOSFET Source and Body Laser Annealing ProcessCalabretta, C. / Agati, M. / Zimbone, M. / Boninelli, S. / Castiello, A. / Pecora, A. / Fortunato, G. / Calcagno, L. / Torrisi, L. / Via, F. La et al. | 2020
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The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal AnnealingZhou, Z. W. / Zhang, Z. Z. / He, W. W. / Hao, J. Y. / Sun, J. / Zhang, F. / Zheng, Z. D. et al. | 2020
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Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiCHellinger, C. / Rusch, O. / Rommel, M. / Bauer, A. J. / Erlbacher, T. et al. | 2020
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Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT TechnologyRoccaforte, F. / Spera, M. / Franco, S. Di / Nigro, R. Lo / Fiorenza, P. / Giannazzo, F. / Tucolano, F. / Greco, G. et al. | 2020
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Development of SiC Etching by Chlorine Fluoride GasTakahashi, Y. / Kato, K. / Habuka, H. et al. | 2020
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The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power DevicesOpondo, N. / Cooper, J. A. / Liao, H. J. / Chen, W. N. / Morisette, D. et al. | 2020
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The IMOSFET: A Deeply-Scaled Fully-Self-Aligned Trench MOSFETSampath, M. / Salemi, A. / Morisette, D. / Cooper, J. A. et al. | 2020
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Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETsMasuda, T. / Saito, Y. / Hatayama, T. / Michikoshi, H. / Mikamura, Y. / Harada, S. et al. | 2020
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Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al ImplantationFukui, Y. / Sugawara, K. / Tanaka, R. / Koketsu, H. / Hatta, H. / Miyata, Y. / Suzuki, H. / Taguchi, K. / Kagawa, Y. / Tomohisa, S. et al. | 2020
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Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion ImplantationTanaka, R. / Sugawara, K. / Fukui, Y. / Hatta, H. / Koketsu, H. / Suzuki, H. / Miyata, Y. / Taguchi, K. / Kagawa, Y. / Tomohisa, S. et al. | 2020
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1200 V / 200 A Groove Trench MOSFET Optimized for Low Power Loss and High ReliabilityUchida, K. / Hiyoshi, T. / Saito, Y. / Egusa, H. / Kaneda, T. / Oomori, H. / Tsuno, T. et al. | 2020
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Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal TopologiesHan, K. J. / Kanale, A. / Baliga, B. J. / Bhattacharya, S. et al. | 2020
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Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETsAgarwal, A. / Kanale, A. / Han, K. J. / Baliga, B. J. / Bhattacharya, S. et al. | 2020
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Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOSOkada, M. / Kumazawa, T. / Kobayashi, Y. / Baba, M. / Harada, S. et al. | 2020
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Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBDTominaga, T. / Hino, S. / Mitsui, Y. / Nakashima, J. / Kawahara, K. / Tomohisa, S. / Miura, N. et al. | 2020
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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFETDai, T. X. / Renz, A. B. / Zhang, L. / Vavasour, O. J. / Baker, G. W. C. / Shah, V. A. / Mawby, P. A. / Gammon, P. M. et al. | 2020
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Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETsBianda, E. / Mihaila, A. / Romano, G. / Knoll, L. / Wirths, S. / Torresin, D. et al. | 2020
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Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETsGendron-Hansen, A. / Hong, C. / Jiang, Y. F. / May, J. / Sdrulla, D. / Odekirk, B. / Kashyap, A. S. et al. | 2020
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Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single ProcessYun, N. / Lynch, J. / Sung, W. J. et al. | 2020
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Avalanche Ruggedness Assessment of 1.2kV 45m Asymmetric Trench SiC MOSFETsDeng, X. C. / Zhu, H. / Li, X. / Xu, X . J. / Zhou, K. / Li, Z. Q. / Bai, S. / Zhang, Y. R. / Zhang, B. et al. | 2020
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Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS TransistorsSchlichting, H. / Kocher, M. / Weisse, J. / Erlbacher, T. / Bauer, A. J. et al. | 2020
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SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation StudySledziewski, T. / Erlbacher, T. et al. | 2020
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Improved SiC MOSFET SPICE Model to Avoid Convergence ErrorsHove, H. Lefdal / Spro, O. C. / Guidi, G. / Peftitsis, D. et al. | 2020
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Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETsBellini, M. / Knoll, L. et al. | 2020
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1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage DropKanale, A. / Cheng, T. H. / Han, K. J. / Baliga, B. J. / Bhattacharya, S. / Hopkins, D. et al. | 2020
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Common-Drain Bidirectional 1200V SiC MOSFETsHitchcock, C. W. / Chow, T. P. et al. | 2020
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Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETsMcPherson, J. / Hitchcock, C. W. / Chow, T. P. / Ji, W. / Woodworth, A. et al. | 2020
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20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTsKoyama, A. / Kiuchi, Y. / Mizushima, T. / Takenaka, K. / Matsunaga, S. / Sometani, M. / Nakayama, K. / Ishimori, H. / Kimoto, A. / Takei, M. et al. | 2020
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Experimental Demonstration of Ruggedness in 13 kV SiC-IGBTKonishi, K. / Hamada, K. / Okabe, H. / Miyata, Y. / Niwa, H. / Ebihara, K. / Kawahara, K. / Kawabata, N. / Tomohisa, S. / Miura, N. et al. | 2020
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Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD ModelJohannesson, D. / Jacobs, K. / Norrga, S. / Hallén, A. / Nawaz, M. / Nee, H. P. et al. | 2020
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Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-WellTiwari, A. K. / Antoniou, M. / Trajkovic, T. / Dai, T. / Gammon, P. M. / Udrea, F. et al. | 2020
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Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and DarlingtonsAsllani, B. / Bevilacqua, P. / Morel, H. / Planson, D. / Phung, L. V. / Choucoutou, B. / Lagier, T. / Mermet-Guyennet, M. et al. | 2020
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Short Circuit Ruggedness of 600 V SiC Trench JFETsSundaramoorthy, V. / Kranz, L. / Wirths, S. / Bellini, M. / Romano, G. / Arango, Y. / Bianda, E. / Knoll, L. / Mihaila, A. et al. | 2020
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Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) DiodesZhou, X. / Hitchcock, C. W. / Ghandi, R. / Bolotnikov, A. / Chow, T. P. et al. | 2020
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A Subcircuit SPICE Model for SiC Charge-Balance Schottky DiodesHitchcock, C. W. / Zhou, X. / Pandey, G. / Ghandi, R. / Bolotnikov, A. / Chow, T. P. et al. | 2020
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Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-DiodesLechner, B. / Huang, Y. / Schaub, S. / Wachutka, G. et al. | 2020
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Analysis of Barrier Inhomogeneities of P-Type AI/4H-SiC Schottky Barrier DiodesZiko, M. H. / Koel, A. / Rang, T. / Toompuu, J. et al. | 2020
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Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power DevicesHoffmann, F. / Kaminski, N. et al. | 2020
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Stress Test of Cascode Switch Using SiC Static Induction TransistorMatsumoto, T. / Tanaka, Y. / Yano, K. et al. | 2020
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Accelerated Testing of SiC Power Devices under High-Field Operating ConditionsLichtenwalner, D. J. / Sabri, S. / Brunt, E. Van / Hull, B. / Ryu, S. H. / Steinmann, P. / Romero, A. / Park, J. H. / Ganguly, S. / Gajewski, D. A. et al. | 2020
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Investigations on the Resistance Reduction Effect of Double-Trench SiC MOSFETs under Repetitive Avalanche StressWei, J. X. / Liu, S. Y. / Li, S. / Tang, L. Z. / Lou, R. C. / Fu, H. / Zhao, H. B. / Sun, W. F. / Zhang, X. B. / Bai, S. et al. | 2020
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High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky DiodesTang, Y. D. / Liu, X. Y. / Li, C. Z. / Bai, Y. / Chen, H. / Yang, C. Y. et al. | 2020
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Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit BreakerSagara, M. / Wada, K. / Nishizawa, S. et al. | 2020
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High-Performance SIP Half-Bridge IPM Based on 35mQ/1200V SiC Stack-CascodeAlexandrov, P. / Bhalla, A. / Li, X. Q. / Eltze, J. et al. | 2020
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Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module PackagingFan, W. / Wexler, G. / Gurpinar, E. / Ozpineci, B. et al. | 2020
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Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V CharacteristicsGreen, R. / Lelis, A. J. / Nouketcha, F. L. et al. | 2020
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High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETsMengotti, E. / Bianda, E. / Wirths, S. / Baumann, D. / Bettega, J. / Jormanainen, J. et al. | 2020
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The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM InverterLee, H. / Liua, C. K. / Chang, T. C. et al. | 2020
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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)Neudeck, P. G. / Spry, D. J. et al. | 2020
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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETsWitulski, A. F. / Ball, D. R. / Johnson, R. A. / Galloway, K. F. / Sternberg, A. L. / Alles, M. L. / Reed, R. A. / Schrimpf, R. D. / Hutson, J. M. / Javanainen, A. et al. | 2020
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Impact of Proton Irradiation on Power 4H-SiC MOSFETsLebedev, A. A. / Kozlovski, V. V. / Fursin, L. / Strel'chuk, A. M. / Levinshtein, M. E. / Ivanov, P. A. / Zubov, A. V. et al. | 2020
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Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky BarrierStrel'chuk, A. M. / Kozlovski, V. V. / Lebedev, A. A. et al. | 2020
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Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced FailureHuang, Y. / Lechner, B. / Wachutka, G. et al. | 2020
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Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETsAlexandrov, P. / O'Grady, M. et al. | 2020
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Effect Irradiation with 15 MeV Protons on Properties of 4H- SiC UV DetectorsKalinina, E. V. / Lebedev, A. A. / Kozlovski, V. V. / Zabrodski, V. / Nikolaev, A. / Shvarts, M. Z. / Levina, S. et al. | 2020
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Radiation Hardness of 4H-SiC JFETs in MGy Dose RangesTakeyama, A. / Shimizu, K. / Makino, T. / Yamazaki, Y. / Kuroki, S. I. / Tanaka, Y. / Oshima, T. et al. | 2020
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High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFETSato, S. / Kato, F. / Hozoji, H. / Sato, H. / Yamaguchi, H. / Harada, S. et al. | 2020
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Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature ApplicationsAlbrecht, M. / Pérez, D. / Martens, R. C. / Bauer, A. J. / Erlbacher, T. et al. | 2020
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Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power SupplyKoseki, K. / Yamamoto, M. / Tanaka, Y. et al. | 2020
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Inrush Current Effects on SIC-MOSFETS for LLC ConverterTakaku, Y. / Tanaka, H. / Takada, Y. / Nakata, S. et al. | 2020
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Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETsOkamura, K. / Naito, F. / Takayama, K. / Kitai, H. / Michikoshi, H. / Sakamoto, K. / Tokuchi, A. / Kaito, T. / Kumamoto, D. et al. | 2020
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Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated CircuitsSpry, D. J. / Neudeck, P. G. / Chang, C. W. et al. | 2020