Advances in resist technology and processing IX : proceedings ; 9 - 10 March 1992, San Jose, California (Englisch)

1992

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  • Titel:
    Advances in resist technology and processing IX : proceedings ; 9 - 10 March 1992, San Jose, California
  • Sonstige Beteiligte:
  • Kongress:
    Advances in Resist Technolohy and Processing, conference ; 9; 1992; San Jose, Calif.
  • Erschienen in:
  • Verlag:
    SPIE
  • Erscheinungsort:
    Berlin, Bellingham, Wash.
  • Erscheinungsjahr:
    1992
  • Format / Umfang:
    XI, 684 S
  • Anmerkungen:
    28 cm
    Ill., graph. Darst
    Literaturangaben
  • ISBN:
  • Medientyp:
    Konferenzband
  • Format:
    Print
  • Sprache:
    Englisch
  • Datenquelle:
  • Exportieren:

Inhaltsverzeichnis Konferenzband

Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.

2
Effects of polymer end groups on chemical amplification
Ito, Hiroshi / England, William P. / Lundmark, Stephen B. | 1992
15
Toward the development of a stable chemically amplified DUV positive photoresist
Thackeray, James W. / Canistro, Diane L. / Denison, Mark / Ferrari, Joseph J. / Hemond, Richard C. / Medeiros, David R. / Orsula, George W. / Pavelchek, Edward K. / Rajaratnam, Martha M. / Sinta, Roger F. | 1992
24
Quantitation of airborne chemical contamination of chemically amplified resists using radiochemical analysis
Hinsberg, William D. / MacDonald, Scott A. / Clecak, Nicholas J. / Snyder, Clinton D. | 1992
33
Critical process parameters of an acetal-based deep-UV photoresist
Roeschert, Horst / Przybilla, Klaus J. / Spiess, Walter / Wengenroth, Horst / Pawlowski, Georg | 1992
46
Deep-UV resists with improved delay capabilities
Funhoff, Dirk J. H. / Binder, H. / Schwalm, Reinhold | 1992
56
Characteristics of a chemically amplified silicone-based negative resist in KrF excimer laser lithography
Kawai, Yoshio / Tanaka, Akinobu / Ban, Hiroshi / Nakamura, Jiro / Matsuda, Tadahito | 1992
66
Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification
Kaimoto, Yuko / Nozaki, Koji / Takechi, Satoshi / Abe, Naomichi | 1992
74
Acid diffusion, standing waves, and information theory: a molecular-scale model of chemically amplified resist
Trefonas, Peter / Allen, Mary T. | 1992
94
Acid generation and acid diffusion in photoresist films
McKean, Dennis R. / Allen, Robert D. / Kasai, Paul H. / Schaedeli, Ulrich P. / MacDonald, Scott A. | 1992
104
Analysis of photosensitive salt distribution in polymer films by19F multiple-quantum NMR
Scruggs, Bruce E. / Gleason, Karen K. | 1992
114
Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist
Sturtevant, John L. / Holmes, Steven J. / Rabidoux, Paul A. | 1992
125
New positive-acting chemically amplified resist system for electron-beam lithography
Koyanagi, Hiroo / Umeda, Shin'ichi / Fukunaga, Seiki / Kitaori, Tomoyuki / Nagasawa, Kohtaro | 1992
141
Effect of humidity, residual solvent, and adventitious clean-room contaminants on the performance of AZ-PN
Padmanaban, Munirathna / Endo, Hajime / Inoguchi, Yoshio / Kinoshita, Yoshiaki / Kudo, Takanori / Masuda, Seiya / Nakajima, Yasuhiro / Pawlowski, Georg | 1992
149
Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resist
Oikawa, Akira / Miyata, Shuichi / Maeda, Kimihisa / Tanaka, Hiroyuki / Nakagawa, Kenji | 1992
157
DN 21, DN 41: negative-tone photoresists for deep-UV lithography
Roeschert, Horst / Dammel, Ralph R. / Eckes, Charlotte / Kamiya, K. / Meier, Winfried / Przybilla, Klaus J. / Spiess, Walter / Pawlowski, Georg | 1992
172
Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMs
Suh, Doowon / Palmer, Shane R. / Chatterjee, Subhankar / Merrem, Hans-Joachim / Haltom, Robert C. | 1992
184
tert-Butoxycarbonylated novolac resins as chemically amplified imaging materials
Gozdz, Antoni S. / Shelburne, John A. | 1992
194
Novel chemical amplification positive-resist material for EB lithography
Kihara, Naoko / Ushirogouchi, Tohru / Tada, Tsukasa / Naito, Takuya / Saito, Satoshi / Sasaki, Osamu | 1992
204
Percolation view of novolak dissolution and dissolution inhibition
Yeh, Tung-Feng / Shih, Hsiao-Yi / Reiser, Arnost | 1992
214
Influence of sensitizer spatial distribution on the dissolution mechanism in diazonaphthoquinone resists
Rao, Veena / Hinsberg, William D. / Frank, Curtis W. / Pease, Roger Fabian W. | 1992
231
Design of PACs for high-performance photoresists (I): role of di-esterified PACs having hindered -OH groups
Hanawa, Ryotaro / Uetani, Yasunori / Hanabata, Makoto | 1992
242
Study of photosensitizer for i-line lithography
Kitaori, Tomoyuki / Fukunaga, Seiki / Koyanagi, Hiroo / Umeda, Shin'ichi / Nagasawa, Kohtaro | 1992
262
Selectively DNQ-esterified PAC for high-performance positive photoresists
Uenishi, Kazuya / Sakaguchi, Shinji / Kawabe, Yasumasa / Kokubo, Tadayoshi / Toukhy, Medhat A. / Jeffries, Alfred T. / Slater, Sydney G. / Hurditch, Rodney J. | 1992
273
Novel DNQ PACs for high-resolution i-line lithography
Brunsvold, William R. / Eib, Nicholas K. / Lyons, Christopher F. / Miura, Steve S. / Plat, Marina V. / Dammel, Ralph R. / Evans, O. B. / Rahman, M. D. / Khanna, Dinesh N. / Jain, Sangya et al. | 1992
286
Experimental investigation of a novel dissolution model
Toukhy, Medhat A. / Hansen, Steven G. / Hurditch, Rodney J. / Mack, Chris A. | 1992
297
Studies of dissolution inhibition mechanism of DNQ novolak resists: part III--secondary inhibition with quaternary ammonium salts in development process
Honda, Kenji / Beauchemin, Bernard T. / Hurditch, Rodney J. / Blakeney, Andrew J. / Kokubo, Tadayoshi | 1992
305
Structural effects of NQD PAC and novolak resin on resist performance
Nemoto, Hiroaki / Inomata, Katsumi / Ota, Toshiyuki / Yumoto, Yoshiji / Miura, Takao / Chawanya, Hitoshi | 1992
317
Lithographic performance and dissolution behavior of novolac resins for various developer surfactant systems
Flores, Gary E. / Loftus, James E. | 1992
335
Improving resist performance by PROMOTE processing
Dijkstra, Han J. | 1992
347
Nature and degree of substitution patterns in novolaks by carbon-13 NMR spectroscopy
Khadim, Mohammad A. / Rahman, M. D. / Durham, Dana L. | 1992
362
Liquid phase silylation for the DESIRE process
Baik, Ki-Ho / Ronse, Kurt G. / Van den Hove, Luc / Roland, Bruno | 1992
377
Ester degradation in the DESIRE process
O'Neil, J. P. / Arshak, Khalil I. / Visser, Robert J. | 1992
385
Surface-imaged silicon polymers for 193-nm excimer laser lithography
Kunz, Roderick R. / Horn, Mark W. / Goodman, Russell B. / Bianconi, Patricia A. / Smith, David A. M. / Eshelman, J. R. / Wallraff, Gregory M. / Miller, Robert D. / Ginsburg, Eric J. | 1992
394
Evolution of MIMMI: a novel surface imaging resist based on metallic surface imaging of organic photoresists
Radigan, Kenneth J. / Liddicoat, Silvia | 1992
403
Equipment, materials, and process interactions in a surface-imaging process: part II
Garza, Cesar M. / Solowiej, Eric J. / Boehm, Mark A. | 1992
415
Effective parameters of DESIRE process for controlling resist performance at subhalf to quarter-micron rule
Kato, Kazunori / Taira, Kazuo / Takahashi, Toshihiko / Yanagihara, Kenji | 1992
429
Electron cyclotron resonance etching of silylated resist
Lynch, Bob / Das, Siddhartha / Lieberman, Michael A. / Hess, Dennis W. | 1992
441
Dry development of resist patterns using RIE based on different electrical conductivity
Bargon, Joachim / Baumann, Reinhard R. / Boeker, Peter | 1992
448
Comparison of etching tools for resist pattern transfer
Horn, Mark W. / Hartney, Mark A. / Kunz, Roderick R. | 1992
461
In-situ IR study of the kinetics of silylation
Nicolau, Dan V. / Jinescu, Gheorghita / Fulga, Florin | 1992
472
Quarter-micron deep-UV lithography with silylation process
Endo, Masayuki / Matsuo, Takahiro / Hashimoto, Kazuhiko / Sasago, Masaru / Nomura, Noboru | 1992
477
Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resist
Kim, Seong-Ju / Park, Byung-Sun / Lee, Haiwon | 1992
486
Silylation processes for 193-nm lithography using acid-catalyzed resists
Hartney, Mark A. / Thackeray, James W. | 1992
500
Hexafluoroacetone in resist chemistry: a versatile new concept for materials for deep-UV lithography
Przybilla, Klaus J. / Roeschert, Horst / Pawlowski, Georg | 1992
513
High-speed aqueous-developing negative resist based on triflic-acid-catalyzed epoxy polymerization
Allen, Robert D. / Conley, Will / Gelorme, Jeffrey D. | 1992
526
Comparative study of deep-UV resist processes for 0.35-μm technology
Vinet, Francoise / Mourier, Thierry / Joubert, Olivier P. / Heitzmann, Michel / Le Cornec, Charles / Pons, Michel J. / Thackeray, James W. / Orsula, George W. | 1992
540
Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness data
Robertson, Stewart A. / Stevenson, J. Tom M. / Holwill, Robert J. / Hansen, Steven G. / Ebersole, Charles E. / Thirsk, Mark / Daraktchiev, Ivan S. | 1992
553
Pattern transfer capabilities of CAMP deep-UV resist
Daraktchiev, Ivan S. / Goossens, Dirk / Matthijs, P. / Thirsk, Mark / Blakeney, Andrew J. / Nalamasu, Omkaram / Cheng, May | 1992
561
Dry development of silylated resist: influence of substrate temperature
Joubert, Olivier P. / Rouyer, Claude / Pons, Michel J. / Weill, Andre P. / Paniez, Patrick J. | 1992
573
Correlation of Si wafer FTIR spectra with wafer temperatures and resist durability variations in plasma etching processes
Luckman, Gregory / Babcock, Carl P. / Maynard, Helen L. / Gamsky, Chris J. / Taylor, James W. | 1992
586
Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectric
Martin, Brian / Harper, Neil M. | 1992
597
Photoresist formulation optimization through the use of statistical design of experimentation
Bell, Ken L. / Acuna, Nadine A. / Dixit, Sunit S. / Lazarus, Richard M. / Talor, George | 1992
611
Charge transfer approach to negative resists
Baumann, Reinhard R. / Bargon, Joachim | 1992
616
Limitation of removal particles in positive photoresist
Asaumi, Shingo / Furuta, Mitsuhiro / Yokota, Akira | 1992
623
Physical description of lithographic processes: correlation between bake conditions and photoresist contrast
Paniez, Patrick J. / Festes, Gilles / Chollet, Jean-Paul E. | 1992
638
Enhancement of deep-UV patterning integrity and process control using antireflective coating
Dudley, Bruce W. / Jones, Susan K. / Peters, Charles R. / Koester, David A. / Barnes, Gregg A. / Flaim, Tony D. / Lamb, James E. | 1992
647
Diazonaphthoquinone-sensitized deep-UV resist materials
Fukunaga, Seiki / Kitaori, Tomoyuki / Koyanagi, Hiroo / Umeda, Shin'ichi / Nagasawa, Kohtaro | 1992
660
Fabrication of ultrahigh-quality vertical structures in GaAs
Hagberg, Mats / Jonsson, Bjorn / Larsson, Anders G. | 1992
670
Efficient approach for experimental characterization of resist profile in electron-beam-exposed resists
Madjarova, Nikolina A. | 1992
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