Advances in resist technology and processing IX : proceedings ; 9 - 10 March 1992, San Jose, California (Englisch)
- Neue Suche nach: Novembre, Anthony E.
1992
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ISBN:
- Konferenzband / Print
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Titel:Advances in resist technology and processing IX : proceedings ; 9 - 10 March 1992, San Jose, California
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Beteiligte:
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Kongress:Advances in Resist Technolohy and Processing, conference ; 9 ; 1992 ; San Jose, Calif.
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Erschienen in:
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsort:Bellingham, Wash.
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Erscheinungsdatum:1992
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Format / Umfang:XI, 684 S
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Anmerkungen:28 cm
Ill., graph. Darst
Literaturangaben -
ISBN:
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Medientyp:Konferenzband
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Format:Print
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
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Effects of polymer end groups on chemical amplificationIto, Hiroshi / England, William P. / Lundmark, Stephen B. et al. | 1992
- 15
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Toward the development of a stable chemically amplified DUV positive photoresistThackeray, James W. / Canistro, Diane L. / Denison, Mark / Ferrari, Joseph J. / Hemond, Richard C. / Medeiros, David R. / Orsula, George W. / Pavelchek, Edward K. / Rajaratnam, Martha M. / Sinta, Roger F. et al. | 1992
- 24
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Quantitation of airborne chemical contamination of chemically amplified resists using radiochemical analysisHinsberg, William D. / MacDonald, Scott A. / Clecak, Nicholas J. / Snyder, Clinton D. et al. | 1992
- 33
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Critical process parameters of an acetal-based deep-UV photoresistRoeschert, Horst / Przybilla, Klaus J. / Spiess, Walter / Wengenroth, Horst / Pawlowski, Georg et al. | 1992
- 46
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Deep-UV resists with improved delay capabilitiesFunhoff, Dirk J. H. / Binder, H. / Schwalm, Reinhold et al. | 1992
- 56
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Characteristics of a chemically amplified silicone-based negative resist in KrF excimer laser lithographyKawai, Yoshio / Tanaka, Akinobu / Ban, Hiroshi / Nakamura, Jiro / Matsuda, Tadahito et al. | 1992
- 66
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Alicyclic polymer for ArF and KrF excimer resist based on chemical amplificationKaimoto, Yuko / Nozaki, Koji / Takechi, Satoshi / Abe, Naomichi et al. | 1992
- 74
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Acid diffusion, standing waves, and information theory: a molecular-scale model of chemically amplified resistTrefonas, Peter / Allen, Mary T. et al. | 1992
- 94
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Acid generation and acid diffusion in photoresist filmsMcKean, Dennis R. / Allen, Robert D. / Kasai, Paul H. / Schaedeli, Ulrich P. / MacDonald, Scott A. et al. | 1992
- 104
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Analysis of photosensitive salt distribution in polymer films by19F multiple-quantum NMRScruggs, Bruce E. / Gleason, Karen K. et al. | 1992
- 114
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Postexposure bake characteristics of a chemically amplified deep-ultraviolet resistSturtevant, John L. / Holmes, Steven J. / Rabidoux, Paul A. et al. | 1992
- 125
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New positive-acting chemically amplified resist system for electron-beam lithographyKoyanagi, Hiroo / Umeda, Shin'ichi / Fukunaga, Seiki / Kitaori, Tomoyuki / Nagasawa, Kohtaro et al. | 1992
- 141
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Effect of humidity, residual solvent, and adventitious clean-room contaminants on the performance of AZ-PNPadmanaban, Munirathna / Endo, Hajime / Inoguchi, Yoshio / Kinoshita, Yoshiaki / Kudo, Takanori / Masuda, Seiya / Nakajima, Yasuhiro / Pawlowski, Georg et al. | 1992
- 149
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Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resistOikawa, Akira / Miyata, Shuichi / Maeda, Kimihisa / Tanaka, Hiroyuki / Nakagawa, Kenji et al. | 1992
- 157
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DN 21, DN 41: negative-tone photoresists for deep-UV lithographyRoeschert, Horst / Dammel, Ralph R. / Eckes, Charlotte / Kamiya, K. / Meier, Winfried / Przybilla, Klaus J. / Spiess, Walter / Pawlowski, Georg et al. | 1992
- 172
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Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMsSuh, Doowon / Palmer, Shane R. / Chatterjee, Subhankar / Merrem, Hans-Joachim / Haltom, Robert C. et al. | 1992
- 184
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tert-Butoxycarbonylated novolac resins as chemically amplified imaging materialsGozdz, Antoni S. / Shelburne, John A. et al. | 1992
- 194
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Novel chemical amplification positive-resist material for EB lithographyKihara, Naoko / Ushirogouchi, Tohru / Tada, Tsukasa / Naito, Takuya / Saito, Satoshi / Sasaki, Osamu et al. | 1992
- 204
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Percolation view of novolak dissolution and dissolution inhibitionYeh, Tung-Feng / Shih, Hsiao-Yi / Reiser, Arnost et al. | 1992
- 214
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Influence of sensitizer spatial distribution on the dissolution mechanism in diazonaphthoquinone resistsRao, Veena / Hinsberg, William D. / Frank, Curtis W. / Pease, Roger Fabian W. et al. | 1992
- 231
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Design of PACs for high-performance photoresists (I): role of di-esterified PACs having hindered -OH groupsHanawa, Ryotaro / Uetani, Yasunori / Hanabata, Makoto et al. | 1992
- 242
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Study of photosensitizer for i-line lithographyKitaori, Tomoyuki / Fukunaga, Seiki / Koyanagi, Hiroo / Umeda, Shin'ichi / Nagasawa, Kohtaro et al. | 1992
- 262
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Selectively DNQ-esterified PAC for high-performance positive photoresistsUenishi, Kazuya / Sakaguchi, Shinji / Kawabe, Yasumasa / Kokubo, Tadayoshi / Toukhy, Medhat A. / Jeffries, Alfred T. / Slater, Sydney G. / Hurditch, Rodney J. et al. | 1992
- 273
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Novel DNQ PACs for high-resolution i-line lithographyBrunsvold, William R. / Eib, Nicholas K. / Lyons, Christopher F. / Miura, Steve S. / Plat, Marina V. / Dammel, Ralph R. / Evans, O. B. / Rahman, M. D. / Khanna, Dinesh N. / Jain, Sangya et al. | 1992
- 286
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Experimental investigation of a novel dissolution modelToukhy, Medhat A. / Hansen, Steven G. / Hurditch, Rodney J. / Mack, Chris A. et al. | 1992
- 297
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Studies of dissolution inhibition mechanism of DNQ novolak resists: part III--secondary inhibition with quaternary ammonium salts in development processHonda, Kenji / Beauchemin, Bernard T. / Hurditch, Rodney J. / Blakeney, Andrew J. / Kokubo, Tadayoshi et al. | 1992
- 305
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Structural effects of NQD PAC and novolak resin on resist performanceNemoto, Hiroaki / Inomata, Katsumi / Ota, Toshiyuki / Yumoto, Yoshiji / Miura, Takao / Chawanya, Hitoshi et al. | 1992
- 317
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Lithographic performance and dissolution behavior of novolac resins for various developer surfactant systemsFlores, Gary E. / Loftus, James E. et al. | 1992
- 335
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Improving resist performance by PROMOTE processingDijkstra, Han J. et al. | 1992
- 347
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Nature and degree of substitution patterns in novolaks by carbon-13 NMR spectroscopyKhadim, Mohammad A. / Rahman, M. D. / Durham, Dana L. et al. | 1992
- 362
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Liquid phase silylation for the DESIRE processBaik, Ki-Ho / Ronse, Kurt G. / Van den Hove, Luc / Roland, Bruno et al. | 1992
- 377
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Ester degradation in the DESIRE processO'Neil, J. P. / Arshak, Khalil I. / Visser, Robert J. et al. | 1992
- 385
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Surface-imaged silicon polymers for 193-nm excimer laser lithographyKunz, Roderick R. / Horn, Mark W. / Goodman, Russell B. / Bianconi, Patricia A. / Smith, David A. M. / Eshelman, J. R. / Wallraff, Gregory M. / Miller, Robert D. / Ginsburg, Eric J. et al. | 1992
- 394
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Evolution of MIMMI: a novel surface imaging resist based on metallic surface imaging of organic photoresistsRadigan, Kenneth J. / Liddicoat, Silvia et al. | 1992
- 403
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Equipment, materials, and process interactions in a surface-imaging process: part IIGarza, Cesar M. / Solowiej, Eric J. / Boehm, Mark A. et al. | 1992
- 415
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Effective parameters of DESIRE process for controlling resist performance at subhalf to quarter-micron ruleKato, Kazunori / Taira, Kazuo / Takahashi, Toshihiko / Yanagihara, Kenji et al. | 1992
- 429
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Electron cyclotron resonance etching of silylated resistLynch, Bob / Das, Siddhartha / Lieberman, Michael A. / Hess, Dennis W. et al. | 1992
- 441
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Dry development of resist patterns using RIE based on different electrical conductivityBargon, Joachim / Baumann, Reinhard R. / Boeker, Peter et al. | 1992
- 448
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Comparison of etching tools for resist pattern transferHorn, Mark W. / Hartney, Mark A. / Kunz, Roderick R. et al. | 1992
- 461
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In-situ IR study of the kinetics of silylationNicolau, Dan V. / Jinescu, Gheorghita / Fulga, Florin et al. | 1992
- 472
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Quarter-micron deep-UV lithography with silylation processEndo, Masayuki / Matsuo, Takahiro / Hashimoto, Kazuhiko / Sasago, Masaru / Nomura, Noboru et al. | 1992
- 477
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Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resistKim, Seong-Ju / Park, Byung-Sun / Lee, Haiwon et al. | 1992
- 486
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Silylation processes for 193-nm lithography using acid-catalyzed resistsHartney, Mark A. / Thackeray, James W. et al. | 1992
- 500
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Hexafluoroacetone in resist chemistry: a versatile new concept for materials for deep-UV lithographyPrzybilla, Klaus J. / Roeschert, Horst / Pawlowski, Georg et al. | 1992
- 513
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High-speed aqueous-developing negative resist based on triflic-acid-catalyzed epoxy polymerizationAllen, Robert D. / Conley, Will / Gelorme, Jeffrey D. et al. | 1992
- 526
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Comparative study of deep-UV resist processes for 0.35-μm technologyVinet, Francoise / Mourier, Thierry / Joubert, Olivier P. / Heitzmann, Michel / Le Cornec, Charles / Pons, Michel J. / Thackeray, James W. / Orsula, George W. et al. | 1992
- 540
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Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness dataRobertson, Stewart A. / Stevenson, J. Tom M. / Holwill, Robert J. / Hansen, Steven G. / Ebersole, Charles E. / Thirsk, Mark / Daraktchiev, Ivan S. et al. | 1992
- 553
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Pattern transfer capabilities of CAMP deep-UV resistDaraktchiev, Ivan S. / Goossens, Dirk / Matthijs, P. / Thirsk, Mark / Blakeney, Andrew J. / Nalamasu, Omkaram / Cheng, May et al. | 1992
- 561
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Dry development of silylated resist: influence of substrate temperatureJoubert, Olivier P. / Rouyer, Claude / Pons, Michel J. / Weill, Andre P. / Paniez, Patrick J. et al. | 1992
- 573
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Correlation of Si wafer FTIR spectra with wafer temperatures and resist durability variations in plasma etching processesLuckman, Gregory / Babcock, Carl P. / Maynard, Helen L. / Gamsky, Chris J. / Taylor, James W. et al. | 1992
- 586
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Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectricMartin, Brian / Harper, Neil M. et al. | 1992
- 597
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Photoresist formulation optimization through the use of statistical design of experimentationBell, Ken L. / Acuna, Nadine A. / Dixit, Sunit S. / Lazarus, Richard M. / Talor, George et al. | 1992
- 611
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Charge transfer approach to negative resistsBaumann, Reinhard R. / Bargon, Joachim et al. | 1992
- 616
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Limitation of removal particles in positive photoresistAsaumi, Shingo / Furuta, Mitsuhiro / Yokota, Akira et al. | 1992
- 623
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Physical description of lithographic processes: correlation between bake conditions and photoresist contrastPaniez, Patrick J. / Festes, Gilles / Chollet, Jean-Paul E. et al. | 1992
- 638
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Enhancement of deep-UV patterning integrity and process control using antireflective coatingDudley, Bruce W. / Jones, Susan K. / Peters, Charles R. / Koester, David A. / Barnes, Gregg A. / Flaim, Tony D. / Lamb, James E. et al. | 1992
- 647
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Diazonaphthoquinone-sensitized deep-UV resist materialsFukunaga, Seiki / Kitaori, Tomoyuki / Koyanagi, Hiroo / Umeda, Shin'ichi / Nagasawa, Kohtaro et al. | 1992
- 660
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Fabrication of ultrahigh-quality vertical structures in GaAsHagberg, Mats / Jonsson, Bjorn / Larsson, Anders G. et al. | 1992
- 670
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Efficient approach for experimental characterization of resist profile in electron-beam-exposed resistsMadjarova, Nikolina A. et al. | 1992