Compound semiconductors 2002 : proceedings of the twenty-ninth International Symposium on Compound Semiconductors held in Lausanne, Switzerland, 7-10 October 2002 (Englisch)
- Neue Suche nach: International Symposium on Compound Semiconductors
- Weitere Informationen zu International Symposium on Compound Semiconductors:
- http://d-nb.info/gnd/1707302-9
- Neue Suche nach: Ilegems, Marc
- Neue Suche nach: International Symposium on Compound Semiconductors
- Weitere Informationen zu International Symposium on Compound Semiconductors:
- http://d-nb.info/gnd/1707302-9
2003
-
ISBN:
- Konferenzband / Print
-
Titel:Compound semiconductors 2002 : proceedings of the twenty-ninth International Symposium on Compound Semiconductors held in Lausanne, Switzerland, 7-10 October 2002
-
Beteiligte:
-
Kongress:International Symposium on Compound Semiconductors ; 29 ; 2002 ; Lausanne
-
Erschienen in:Institute of Physics conference series ; no. 174
-
Verlag:
- Neue Suche nach: Institute of Physics Publ.
-
Erscheinungsort:Bristol [u.a.]
-
Erscheinungsdatum:2003
-
Format / Umfang:xxiv, 468 p
-
Anmerkungen:25 cm
ill
Includes bibliographical references and index -
ISBN:
-
Medientyp:Konferenzband
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.56 / 33.72
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 621.38152
- Weitere Informationen zu Dewey Decimal Classification
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
GaAs on silicon using an oxide buffer layerDroopad, R. / Curless, J. / Yu, Z. / Jordan, D. / Liang, Y. / Overgaard, C. / Li, H. / Eschrich, T. / Ramdani, J. / Hilt, L. et al. | 2003
- 9
-
Ultra shallow GaAs sidewall tunnel junctions implemented with low-temperature area selective regrowthOyama, Y. / Ohno, T. / Tezuka, K. / Suto, K. / Nishizawa, J.-i. / Institute of Physics et al. | 2003
- 13
-
Growth and properties of polycrystalline GaN on ZnO/Si substrates by ECR-MBEKitamura, K. / Mamiya, H. / Araki, T. / Maruyama, T. / Nanishi, Y. / Institute of Physics et al. | 2003
- 17
-
Single crystalline InN films grown on Si (111) substratesYamaguchi, T. / Mizuo, K. / Saito, Y. / Araki, T. / Nanishi, Y. / Institute of Physics et al. | 2003
- 21
-
Growth and evaluation of CdTe/Si (111) by hot wall epitaxyLalev, G. M. / Wang, J. / Abe, S. / Masumoto, K. / Isshiki, M. / Institute of Physics et al. | 2003
- 25
-
A surface reconstruction functioning as a micro mask during in-situ layer-by-layer etching of GaAs(111)B using AsBr~3Asaoka, Y. / Ihara, I. / Yokoyama, K. / Daicho, S. / Sano, N. / Kaneko, T. / Institute of Physics et al. | 2003
- 29
-
Comparative study of p-type dopants, Mg and Be in GaN grown by RF-MBESugita, S. / Watari, Y. / Yoshizawa, G. / Sodesawa, J. / Yamamizu, H. / Liu, K. T. / Su, Y. K. / Horikoshi, Y. / Institute of Physics et al. | 2003
- 33
-
Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequenceOkada, D. / Hasegawa, H. / Hasegawa, T. / Horikoshi, Y. / Saitoh, T. / Institute of Physics et al. | 2003
- 37
-
Contribution of interface states and bulk traps to GaAs MIS admittanceKochowski, S. / Paszkiewicz, B. / Paszkiewicz, R. / Institute of Physics et al. | 2003
- 41
-
Electrical isolation of p-type InP and InGaAs layers by iron implantation: Effects of substrate temperatureToo, P. / Ahmed, S. / Sealy, B. J. / Gwilliam, R. / Institute of Physics et al. | 2003
- 45
-
Inductively coupled argon plasma enhanced quantum well intermixing in InGaAs/InGaAsP laser structureDjie, H. S. / Arokiaraj, J. / Mei, T. / Institute of Physics et al. | 2003
- 49
-
Annealing studies of Si-implanted GaN by Hall-effect and photoluminescence measurementsFellows, J. A. / Yeo, Y. K. / Ryu, M.-Y. / Hengehold, R. L. / Steiner, T. D. / Institute of Physics et al. | 2003
- 53
-
Optical evaluation of spatial carrier concentration fluctuations in doped InP substratesBaeumler, M. / Diwo, E. / Jantz, W. / Sahr, U. / Muller, G. / Grant, I. / Institute of Physics et al. | 2003
- 57
-
An "anomalous" drift of defects under electric field in CdSe and CdS single crystalsBorkovska, L. V. / Bulakh, B. M. / Khomenkova, L. / Korsunska, N. O. / Markevich, I. V. / Institute of Physics et al. | 2003
- 61
-
Injection energy dependence of electron thermalization length in AlGaAs/GaAs quantum well structuresTsuruoka, T. / Hashimoto, H. / Ohizumi, Y. / Ushioda, S. / Institute of Physics et al. | 2003
- 65
-
Optical and structural investigations of GeSiO~2 systemsTorchynska, T. V. / Aguilar-Hernandez, J. / Polupan, G. / Kolobov, A. / Institute of Physics et al. | 2003
- 69
-
Thermal quenching of emission of self-assembled InAs quantum dots embedded into InGaAs/GaAs MQWTorchynska, T. V. / Espinola, J. L. C. / Lopez, H. M. A. / Eliseev, P. G. / Stintz, A. / Malloy, K. J. / Sierra, R. P. / Institute of Physics et al. | 2003
- 73
-
Guided surface-acoustic-wave modes in AIN layers grown on SiC substratesTakagaki, Y. / Santos, P. V. / Wiebicke, E. / Brandt, O. / Schonherr, H.-P. / Ploog, K. H. / Institute of Physics et al. | 2003
- 77
-
Photoluminescence from deep levels in Fe-doped InP substratesYamada, M. / Fukuzawa, M. / Institute of Physics et al. | 2003
- 81
-
Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructuresKunets, V. P. / Zhuchenko, Z. Y. / Kissel, H. / Muller, U. / Tarasov, G. G. / Masselink, W. T. / Institute of Physics et al. | 2003
- 85
-
Two-dimensional mapping of resistivity in semi-insulating GaAs wafers with large diameter using a nondestructive techniqueFukuzawa, M. / Yamada, M. / Institute of Physics et al. | 2003
- 89
-
Sonic-stimulated temperature rise around dislocationSavkina, R. K. / Smirnov, A. B. / Institute of Physics et al. | 2003
- 93
-
The cluster variation method for semiconductor alloysElyukhina, O. V. / Institute of Physics et al. | 2003
- 97
-
Exciton formation inhibition in GaInAs/InP Fe doped quantum wellsGuezo, M. / Loualiche, S. / Even, J. / Le Corre, A. / Folliot, H. / Labbe, C. / Dehaese, O. / Institute of Physics et al. | 2003
- 101
-
Compositional dependence of electron traps in Ga(As,N) grown by molecular-beam epitaxyKrispin, P. / Gambin, V. / Harris, J. S. / Ploog, K. H. / Institute of Physics et al. | 2003
- 105
-
The influence of the quantum lifetime on the width of the quantum Hall plateausGottwaldt, L. / Pierz, K. / Ahlers, F. J. / Schweitzer, L. / Gobel, E. O. / Stolz, W. / Institute of Physics et al. | 2003
- 109
-
Intersubband transitions in strain compensated InGaAs/AlAs quantum well structures grown on InPGeorgiev, N. / Semtsiv, M. / Dekorsy, T. / Eichhorn, F. / Bauer, A. / Helm, M. / Masselink, W. T. / Institute of Physics et al. | 2003
- 113
-
Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPEKim, J. / Cho, S. / Sanz-Hervas, A. / Majerfeld, A. / Patriarche, G. / Kim, B. W. / Institute of Physics et al. | 2003
- 117
-
Carrier dynamics in self-organized In(Ga)As/Ga(Al)As quantum dots and their application to long-wavelength sources and detectorsBhattacharya, P. / Stiff-Roberts, A. D. / Chakrabarti, S. / Krishna, S. / Fischer, C. / Norris, T. / Urayama, J. / Institute of Physics et al. | 2003
- 125
-
Single-electron transistorsHadley, P. / Lientschnig, G. / Lai, M.-J. / Institute of Physics et al. | 2003
- 133
-
Selective formation of high-density and high-uniformity InAs/GaAs quantum dots for ultra-small and ultra-fast all-optical switchesNakamura, Y. / Nakamura, H. / Ohkouchi, S. / Ikeda, N. / Sugimoto, Y. / Asakawa, K. / Institute of Physics et al. | 2003
- 137
-
Mechanical interaction in near-field spectroscopy of single semiconductor quantum dotsMintairov, A. M. / Blagnov, P. A. / Kovalenkov, O. V. / Li, C. / Merz, J. L. / Oktyabrsky, S. / Tokranov, V. / Vlasov, A. S. / Vinokurov, D. A. / Institute of Physics et al. | 2003
- 141
-
Magnetic properties of (Ga,Mn)N grown directly on 4H-SiC(0001) by molecular-beam epitaxyDhar, S. / Brandt, O. / Trampert, A. / Friedland, K. J. / Ploog, K. H. / Institute of Physics et al. | 2003
- 145
-
Selective MBE growth of GaAs ridge quantum wire arrays on patterned (001) substrates and its growth mechanismSato, T. / Tamai, I. / Hasegawa, H. / Institute of Physics et al. | 2003
- 149
-
Large transition energy separation at 1.31 mum emission from InAs/GaAs quantum dotsWei, Y. Q. / Wang, S. M. / Ferdos, F. / Zhao, Q. X. / Vukusic, J. / Sadeghi, M. / Larsson, A. / Institute of Physics et al. | 2003
- 153
-
Optical spectra of quantum dot aggregates in sub-wetting layer regionKral, K. / Zdenek, P. / Institute of Physics et al. | 2003
- 157
-
Self-organized growth of InAs quantum dots and reduction of dot density by in-situ annealingMatsuzaki, Y. / Kobuse, T. / Ohashi, R. / Konagai, M. / Yamada, A. / Institute of Physics et al. | 2003
- 161
-
Narrow size-dispersion CdSe quantum dots grown on ZnSe by modified MEE techniqueSedova, I. V. / Sorokin, S. V. / Sitnikova, A. A. / Nekrutkina, O. V. / Reznitsky, A. A. / Ivanov, S. V. / Institute of Physics et al. | 2003
- 165
-
Spectroscopy of high-density assemblage of InAs/GaAs quantum dotsZhuchenko, Z. Y. / Tomm, J. W. / Kissel, H. / Mazur, Y. I. / Tarasov, G. G. / Masselink, W. T. / Institute of Physics et al. | 2003
- 169
-
Properties of InGaAs coupled quantum wire structures grown on vicinal (111)B GaAs with quasi-periodic corrugationNoda, T. / Kondo, N. / Akiyama, Y. / Kawazu, T. / Sakaki, H. / Institute of Physics et al. | 2003
- 173
-
One-dimensional free exciton in CdTe/Cd~0~.~7~4Mg~0~.~2~6Te quantum wiresNagahara, S. / Kita, T. / Wada, O. / Marsal, L. / Mariette, H. / Institute of Physics et al. | 2003
- 179
-
Analysis of self-assembled GaN nanorods on Si(111) substrateTu, L. W. / Hsiao, C. L. / Chi, T. W. / Wu, J. F. / Lo, I. / Hsieh, K. Y. / Sheng, T. T. / Hu, C. F. / Institute of Physics et al. | 2003
- 183
-
Electroluminescence of asymmetric coupled GaAs/AlGaAs V-groove quantum wiresKarlsson, F. / Weman, H. / Dupertuis, M.-A. / Leifer, K. / Rudra, A. / Kapon, E. / Institute of Physics et al. | 2003
- 187
-
Effects of nitrogen incorporation in In(Ga)As/GaAs quantum dotsPark, K. / Jeong, W. G. / Jang, J. / Jang, Y. D. / Kim, N. J. / Lee, D. / Institute of Physics et al. | 2003
- 191
-
Photoconductivity of GaAs/AlGaAs quantum wires measured along the wires directionDonchev, V. / Saraydarov, M. / Germanova, K. / Wang, X.-L. / Kim, S.-J. / Ogura, M. / Institute of Physics et al. | 2003
- 195
-
GaAs HBTs with reduced collector capacitance for high-speed ICs and microwave power applicationsMochizuki, K. / Institute of Physics et al. | 2003
- 203
-
InP/GaAsSb/InP heterojunction bipolar transistorsBolognesi, C. / Dvorak, M. W. / Watkins, S. P. / Institute of Physics et al. | 2003
- 211
-
Industrial aspects of III/V electronics: GaAs IC manufacturing in Taiwan for wireless communicationsChao, P. C. / Institute of Physics et al. | 2003
- 217
-
Silicon germanium technologies for high-speed digital and analog applicationsKnapp, H. / Bock, J. / Wurzer, M. / Aufinger, K. / Meister, T. F. / Institute of Physics et al. | 2003
- 223
-
AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, 6H-SiC, and HVPE-GaN templatesWeimann, N. G. / Manfra, M. J. / Hsu, J. W. P. / Baldwin, K. / Pfeiffer, L. N. / West, K. W. / Chu, S. N. G. / Lang, D. V. / Molnar, R. J. / Institute of Physics et al. | 2003
- 227
-
High power AlGaN/GaN HEMT'sEastman, L. F. / Tilak, V. / Thompson, R. / Green, B. / Kaper, V. / Prunty, T. / Shealy, R. / Smart, J. / Kim, H. / Institute of Physics et al. | 2003
- 231
-
High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistorsMakimoto, T. / Kumakura, K. / Kobayashi, N. / Institute of Physics et al. | 2003
- 235
-
Multiwafer epitaxy of GaN/AlGaN heterostructures for power applicationsKohler, K. / Muller, S. / Rollbuhler, N. / Kiefer, R. / Quay, R. / Weimann, G. / Institute of Physics et al. | 2003
- 239
-
Fabrication and electrical performance of oscillators in GaInP/GaAs-HBT MMIC technology up to 40 GHzHilsenbeck, J. / Brunner, F. / Lenk, F. / Wurfl, J. / Institute of Physics et al. | 2003
- 243
-
Experimental demonstration of a resonant tunneling delta-sigma modulator for high-speed, high-resolution analog-to-digital converterYokoyama, Y. / Ohno, Y. / Kishimoto, S. / Maezawa, K. / Mizutani, T. / Institute of Physics et al. | 2003
- 247
-
InAs/AlGaSb heterostructure displacement sensorsYamaguchi, H. / Miyashita, S. / Hirayama, Y. / Institute of Physics et al. | 2003
- 251
-
Charge balanced Ga~2O-GaAs interface and application to self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistorPasslack, M. / Abrokwah, J. K. / Droopad, R. / Yu, Z. / Overgaard, C. / Yi, S. I. / Hale, M. / Sexton, J. / Kummel, A. C. / Institute of Physics et al. | 2003
- 255
-
Investigation of quantum transport phenomena in resonant tunneling structures by simulations with a novel quantum hydrodynamic transport modelHontschell, J. / Klix, W. / Stenzel, R. / Institute of Physics et al. | 2003
- 259
-
Correlation between channel temperature and negative resistance in AlGaN/GaN HEMTsShigekawa, N. / Shiojima, K. / Institute of Physics et al. | 2003
- 263
-
Effect of temperature on the avalanche properties of sub-micron structuresHarrison, C. N. / David, J. P. R. / Groves, C. / Hopkinson, M. / Rees, G. J. / Institute of Physics et al. | 2003
- 267
-
In~0~.~5~3Ga~0~.~4~7As ionization coefficients deduced from photomultiplication measurementsNg, J. S. / Yee, M. C. / David, J. P. R. / Houston, P. A. / Rees, G. J. / Hill, G. / Institute of Physics et al. | 2003
- 271
-
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistorChuang, H. M. / Yu, K. H. / Lin, K. W. / Cheng, C. C. / Chen, J. Y. / Liu, W. C. / Institute of Physics et al. | 2003
- 275
-
70-nm-gate PHEMT fabricated by a trilayer process of ZEP/P(MMA-MAA)/PMMA resistKim, S. C. / Lim, B. O. / Lee, H. S. / Kim, S. K. / Park, H. C. / Shin, D.-H. / Rhee, J. K. / Institute of Physics et al. | 2003
- 279
-
Studies on the low-k BCB passivation of 0.1 mum gamma gate PHEMTsSul, W.-S. / Han, H.-J. / Lee, S.-D. / Rhee, J.-K. / Institute of Physics et al. | 2003
- 283
-
Design of low loss transmission lines on GaAs substrates using the surface micromachining methodsChun, Y.-H. / Kim, S.-C. / Lim, B.-O. / Lee, H.-S. / Lee, M.-K. / Kim, H.-S. / Shin, D.-H. / Kim, S.-K. / Park, H.-C. / Rhee, J.-K. et al. | 2003
- 287
-
Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTsTilak, V. / Kaper, V. / Thompson, R. / Prunty, T. / Kim, H. / Smart, J. / Shealy, J. R. / Eastman, L. / Institute of Physics et al. | 2003
- 291
-
120 nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contactsBoyd, E. / Moran, D. / McLelland, H. / Elgaid, K. / Chen, Y. / Macintyre, D. / Thoms, S. / Stanley, C. / Thayne, I. / Institute of Physics et al. | 2003
- 295
-
New composite-emitter HBTs with reduced turn-on voltage and small offset voltageTsai, M. K. / Wu, Y. W. / Tan, S. W. / Yang, Y. J. / Lour, W. S. / Institute of Physics et al. | 2003
- 299
-
Properties of electronic states at free surfaces and Schottky barrier interfaces of AlGaN/GaN heterostructureHasegawa, H. / Inagaki, T. / Ootomo, S. / Hashizume, T. / Institute of Physics et al. | 2003
- 303
-
Direct S-parameter extraction by physical two-dimensional device AC-simulationPalankovski, V. / Wagner, S. / Grasser, T. / Schultheis, R. / Selberherr, S. / Institute of Physics et al. | 2003
- 307
-
High-power blue-violet lasers grown on 3-inch sapphire and GaN substrateUchida, S. / Ikeda, S. / Mizuno, T. / Goto, S. / Sasaki, T. / Ohfuji, Y. / Fujimoto, T. / Matsumoto, O. / Oikawa, K. / Takeya, M. et al. | 2003
- 315
-
III/V nitride LEDs and lasersHahn, B. / Eisert, D. / Baur, J. / Fehrer, M. / Kaiser, S. / Lugauer, H.-J. / Strauss, U. / Lell, A. / Harle, V. / Institute of Physics et al. | 2003
- 323
-
Recent advances in continuous wave quantum cascade lasersHofstetter, D. / Beck, M. / Blaser, S. / Aellen, T. / Faist, J. / Oesterle, U. / Ilegems, M. / Gini, E. / Melchior, H. / Institute of Physics et al. | 2003
- 331
-
Edge- and surface-emitting photonic-crystal distributed-feedback lasersVurgaftman, I. / Bewley, W. W. / Canedy, C. L. / Lindle, J. R. / Kim, C. S. / Meyer, J. R. / Institute of Physics et al. | 2003
- 339
-
Quantum well infrared photodetectors and thermal imaging camerasSchneider, H. / Rehm, R. / Fleissner, J. / Walther, M. / Koidl, P. / Weimann, G. / Ziegler, J. / Breiter, R. / Cabanski, W. / Institute of Physics et al. | 2003
- 347
-
Temperature sensitivity of high power GaSb based 2mum diode lasersRattunde, M. / Mermelstein, C. / Schmitz, J. / Kiefer, R. / Pletschen, W. / Walther, M. / Wagner, J. / Institute of Physics et al. | 2003
- 351
-
Long-wavelength, two-dimensional, WDM vertical-cavity surface-emitting laser arrays fabricated by nonplanar wafer bondingGeske, J. / Okuno, Y. L. / Bowers, J. E. / Leonard, D. / Institute of Physics et al. | 2003
- 355
-
High gain, low noise 4H-SiC UV avalanche photodiodesNg, B. K. / David, J. P. R. / Tozer, R. C. / Rees, G. J. / Yan, F. / Qin, C. / Zhao, J. H. / Institute of Physics et al. | 2003
- 359
-
Novel microcavity light emitting diodesStanley, R. P. / Royo, P. / Oesterle, U. / Joray, R. / Ilegems, M. / Institute of Physics et al. | 2003
- 363
-
High extraction efficiency AlGaInP microcavity light emitting diodes at 650 nm with AlGaAs-AlO~x DBRJoray, R. / Dorsaz, J. / Stanley, R. P. / Ilegems, M. / Rattier, M. / Karnutsch, C. / Streubel, K. / Institute of Physics et al. | 2003
- 367
-
Orientation-mismatched wafer bonding for polarization control of 1.3 mum wavelength vertical cavity surface emitting lasers (VCSEL)Okuno, Y. L. / Geske, J. / Chiu, Y.-J. / DenBaars, S. P. / Bowers, J. E. / Institute of Physics et al. | 2003
- 371
-
Population inversion enhancement by resonant magnetic confinement in THz quantum cascade lasersScalari, G. / Blaser, S. / Ajili, L. / Rochat, M. / Willenberg, H. / Hofstetter, D. / Faist, J. / Beere, H. / Davies, G. / Linfield, E. et al. | 2003
- 375
-
Interferometric temperature mapping of GaAs-based quantum cascade laserPflugl, C. / Litzenberger, M. / Schrenk, W. / Anders, S. / Pogany, D. / Gornik, E. / Strasser, G. / Institute of Physics et al. | 2003
- 379
-
Sensitivity of intersubband absorption linewidth and transport mobility to interface roughness scattering in GaAs quantum wellsUnuma, T. / Yoshita, M. / Noda, T. / Sakaki, H. / Baba, M. / Akiyama, H. / Institute of Physics et al. | 2003
- 385
-
Improved temperature performance of GaAs/AlGaAs quantum cascade lasersSchrenk, W. / Anders, S. / Pflugl, C. / Gornik, E. / Strasser, G. / Becker, C. / Sirtori, C. / Institute of Physics et al. | 2003
- 389
-
Electron-phonon strong coupling in intersubband resonatorsBiasiol, G. / Sorba, L. / Dini, D. / Kohler, R. / Tredicucci, A. / Beltram, F. / Institute of Physics et al. | 2003
- 393
-
Demonstration of 640x512 pixel four-band quantum well infrared photodetector (QWIP) focal plane arrayGunapala, S. D. / Bandara, S. V. / Liu, J. K. / Rafol, S. B. / Jhabvala, M. / Choi, K. K. / Institute of Physics et al. | 2003
- 397
-
Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bondsChen, Y. F. / Chiu, Y. S. / Ya, M. H. / Chen, T. T. / Institute of Physics et al. | 2003
- 401
-
Efficient nitride-based short-wavelength emitters with enhanced hole injectionZavada, J. M. / Komirenko, S. M. / Kim, K. W. / Kochelap, V. A. / Institute of Physics et al. | 2003
- 405
-
Study of polarization switch in a three-contacts vertical-cavity surface-emitting laserBadilita, V. / Carlin, J.-F. / Ilegems, M. / Brunner, M. / Verschaffelt, G. / Panajotov, K. / Institute of Physics et al. | 2003
- 409
-
Analysis of dynamics and intensity noise of semiconductor lasers under strong optical feedbackAbdulrhmann, S. / Ahmed, M. / Okamoto, T. / Ishimori, W. / Yamada, M. / Institute of Physics et al. | 2003
- 415
-
High performance optically pumped 1.55 mum VCSELs for novel telecom applicationsSyrbu, A. / Suruceanu, G. / Iakovlev, V. / Rudra, A. / Mereuta, A. / Berseth, C.-A. / Mircea, A. / Bungarzeanu, C. / Kapon, E. / Institute of Physics et al. | 2003
- 419
-
GaN-based single mirror light emitting diodesZellweger, C. / Dorsaz, J. / Carlin, J. F. / Buhlmann, H. J. / Ilegems, M. / Stanley, R. P. / Institute of Physics et al. | 2003
- 423
-
Nonlinear semiconductor materials for a fully passive low-loss optical combinerZhao, G. / van der Tol, J. J. G. M. / Institute of Physics et al. | 2003
- 427
-
Optically pumped vertical external cavity semiconductor thin-disk laser with CW operation at 660 nmMuller, M. I. / Karnutsch, C. / Luft, J. / Schmid, W. / Streubel, K. / Linder, N. / Beyertt, S.-S. / Brauch, U. / Giesen, A. / Dohler, G. H. et al. | 2003
- 431
-
Polarization-sensitive photo-detectors based on strained M-plane GaNGhosh, S. / Misra, P. / Brandt, O. / Grahn, H. T. / Institute of Physics et al. | 2003
- 435
-
Investigation of the modulation efficiency of depleted InGaAsP/InP ridge waveguide phase modulators at 1.55 mumPark, H. S. / Yi, J. C. / Byun, Y. T. / Institute of Physics et al. | 2003
- 439
-
Continuous wave operation of far-infrared quantum cascade lasersAjili, L. / Scalari, G. / Willenberg, H. / Hofstetter, D. / Beck, M. / Faist, J. / Beere, H. / Davies, G. / Linfield, E. / Ritchie, D. et al. | 2003
- 443
-
Resonant phonon-assisted depopulation in type-I and type-II intersubband laser heterostructuresKisin, M. V. / Stroscio, M. A. / Belenky, G. / Luryi, S. / Institute of Physics et al. | 2003
- 447
-
Mid-infrared quantum cascade lasers operation above room temperatureYang, Q. / Mann, C. / Fuchs, F. / Kiefer, R. / Kohler, K. / Schneider, H. / Institute of Physics et al. | 2003
- 451
-
Scattering transport and electron temperature evaluation in terahertz GaAs/AlGaAs quantum cascade laserIndjin, D. / Harrison, P. / Kelsall, R. W. / Ikonic, Z. / Institute of Physics et al. | 2003
- 455
-
Graded interface 9.3 mum quantum cascade lasersAellen, T. / Beck, M. / Hofstetter, D. / Faist, J. / Oesterle, U. / Ilegems, M. / Gini, E. / Melchior, H. / Institute of Physics et al. | 2003
- 459
-
Lasing properties of GaAs/(Al,Ga)As quantum cascade lasers as a function of injector doping densityGiehler, M. / Hey, R. / Kostial, H. / Ohtsuka, T. / Schrottke, L. / Grahn, H. T. / Institute of Physics et al. | 2003