Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics Conference [on Microscopy of Semiconducting Materials], Cambridge University, 31 March - 3 April 2003 ; MSM XIII (Englisch)
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2003
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Titel:Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics Conference [on Microscopy of Semiconducting Materials], Cambridge University, 31 March - 3 April 2003 ; MSM XIII
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Beteiligte:
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Kongress:Conference on Microscopy of Semiconducting Materials ; 13 ; 2003 ; Cambridge
MSM ; 13 ; 2003 ; Cambridge -
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- Neue Suche nach: Institute of Physics Publ.
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Erscheinungsort:Bristol [u.a.]
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Erscheinungsdatum:2003
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Format / Umfang:XVIII, 686 S
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Anmerkungen:Ill., graph. Darst
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ISBN:
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Medientyp:Konferenzband
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Format:Print
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Sprache:Englisch
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Exploring the limits of transistor scaling with electron microscopyMuller, D. A. / Baumann, F. H. / Voyles, P. M. / Wilk, G. D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 11
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Measurement of the displacement field around an edge dislocation in silicon to 3 pm by high-resolution electron microscopyHytch, M. J. / Putaux, J.-L. / Penisson, J.-M. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 15
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One-angstrom-resolution element mapping by phase contrast ARHVEM techniqueIwamoto, C. / Shen, X. Q. / Okumura, H. / Matsuhata, H. / Ikuhara, Y. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 19
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Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysisRosenauer, A. / Gerthsen, D. / Van Dyck, D. / Van Aert, S. / Dekker, A. J. D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 23
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Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy imagesGalindo, P. L. / Ponce, A. / Molina, S. I. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 27
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Electron energy loss spectroscopic profiling of semiconductor hetero- and nano-structures: theory, implementation, applicationsWalther, T. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 33
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Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductorsGutierrez-Sosa, A. / Bangert, U. / Fall, C. J. / Jones, R. / Blumenau, A. T. / Briddon, P. R. / Frauenheim, T. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 37
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Investigations of core level states in epitaxial grown Si layers by electron energy loss spectrometryStoger-Pollach, M. / Hebert, C. / Karl-Ruckert, E. C. / Schattschneider, P. / Rau, B. / Gall, S. / Zandbergen, H. W. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 41
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Electron energy loss line spectral and TEM analysis of heterojunctionsStolojan, V. / Whiting, M. J. / Goringe, M. J. / Kelly, M. J. / Silva, S. R. P. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 45
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Determination of the mean inner potential in III-V semiconductors by electron holographyKruse, P. / Rosenauer, A. / Gerthsen, D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 49
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Electron beam illumination effects on electrostatic potential mapping in holographic imaging of semiconductors in TEMHouben, L. / Luysberg, M. / Brammer, T. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 53
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The application of advanced TEM techniques to the characterisation of an asymmetric spacer layer tunnel diodeCooper, D. / Twitchett, A. C. / Dunin-Borkowski, R. E. / Zhi, D. / Kelly, M. J. / Midgley, P. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 57
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A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEMBarnard, J. S. / Vickers, M. E. / Kappers, M. J. / Thrush, E. J. / Humphreys, C. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 61
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Indium rich clusters in MOCVD InGaN/GaN: high resolution electron microscopy study and finite element modellingJurczak, G. / Kret, S. / Ruterana, P. / Maciejeswki, M. / Dluzewski, P. / Sanchez, A. M. / di Forte Poisson, M. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 65
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Carbon in multicrystalline ribbon-silicon for solar cell applicationsWerner, M. / Scheerschmidt, K. / Pippel, E. / Funke, C. / Moller, H. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 69
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Combined HREM and theoretical analysis of SiC/Si interfacesGrillo, V. / Frabboni, S. / Cicero, G. / Savini, G. / Catellani, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 73
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Characterization of a porous silicon carbide layer produced on a 6H-SiC substrate: TEM (XHREM) and EDX studiesHetherington, C. J. D. / Hutchison, J. L. / Lebedev, A. A. / Mosina, G. N. / Savkina, N. S. / Sloan, J. / Sorokin, L. M. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 79
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Modelling and HRTEM computer simulation of facetting of SnO~2 nanostructures deposited by spray pyrolysis on glass substratesRossinyol, E. / Arbiol, J. / Peiro, F. / Cornet, A. / Morante, J. R. / Brinzari, V. / Korotcenkov, G. / Golovanov, V. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 83
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Structure and composition analysis of nanotubes and ceramics by a new 300 kV energy-filtered FEGTEMBando, M. Y. / Golberg, D. / Mitome, M. / Kitami, Y. / Kurashima, K. / Kaneyama, T. / Okura, Y. / Naruse, M. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 91
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Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scatteringZhi, D. / Fewster, P. F. / Pashley, D. W. / Joyce, B. A. / Goodhew, P. J. / Jones, T. S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 95
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A TEM study of compositional inhomogeneity in semiconductor quantum dotsAndroussi, Y. / Benabbas, T. / Jacob, D. / Lefebvre, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 99
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GeSi quantum dots: the effect of alloying on the shape transformationLang, C. / Nguyen-Manh, D. / Cockayne, D. J. H. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 103
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Optimisation of the optical emission of bilayers of quantum dotsMigliorato, M. A. / Navaretti, P. / Norris, D. J. / Liew, S. L. / Cullis, A. G. / Liu, H.-Y. / Steer, M. J. / Hopkinson, M. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 107
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Establishing MOVPE growth of InAs/GaAs quantum dots in a commercial 8x3" multiwafer reactor for optoelectronic applicationsDrouot, V. / Beanland, R. / Button, C. C. / Wang, X. Y. / David, J. P. R. / Ouali, F. F. / Holden, A. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 111
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Study of defects in GaSb/GaAs quantum dots by TEMHausler, I. / Kirmse, H. / Neumann, W. / Muller-Kirsch, L. / Bimberg, D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 115
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(Si,Ge) islands on Si: A TEM study of growth-correlated structural and chemical propertiesKirmse, H. / Schneider, R. / Otto, R. / Neumann, W. / Hanke, M. / Schmidbauer, M. / Kohler, R. / Wawra, H. / Boeck, T. / Soshnikov, I. P. et al. | 2003
- 119
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Observation of the nucleation kinetics of Si quantum dots on SiO~2 by EFTEMNicotra, G. / Lombardo, S. / Puglisi, R. / Spinella, C. / Ammendola, G. / Gerardi, C. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 123
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Observation of strained SiGe nanoislands embedded in a Si matrix using ambient cross-sectional atomic force microscopyTitkov, A. N. / Dunaevskii, M. S. / Krasilnik, Z. F. / Lobanov, D. N. / Novikov, A. V. / Laiho, R. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 127
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Segregation in III-V semiconductor heterostructures studied by transmission electron microscopySchowalter, M. / Melzer, M. / Rosenauer, A. / Gerthsen, D. / Krebs, R. / Reithmaier, J.-P. / Forchel, A. / Arzberger, M. / Bichler, M. / Abstreiter, G. et al. | 2003
- 131
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Use of quantitative EELS and cathodoluminescence for study of carrier confinement and diffusion in self organized vertical quantum wellsLeifer, K. / Mautino, S. / Weman, H. / Rudra, A. / Pelucchi, E. / Bobard, F. / Wyser, A. / Kapon, E. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 135
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Analysis of strain and composition distributions in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaPZeimer, U. / Kirmse, H. / Grenzer, J. / Grigorian, S. / Kissel, H. / Knauer, A. / Pietsch, U. / Neumann, W. / Weyers, M. / Trankle, G. et al. | 2003
- 139
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Existence of a critical threshold for the wavy growth onset in strain-balanced InGaAs-based multi-quantum wellsNasi, L. / Lazzarini, L. / Ferrari, C. / Clarke, G. / Mazzer, M. / Barnham, K. W. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 143
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Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopyGutierrez, M. / Herrera, M. / Ross, I. / Gonzalez, D. / Hopkinson, M. / Garcia, R. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 147
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Quantitative investigation of Sb distribution in GaSb/GaAs heterostructuresSchowalter, M. / Rosenauer, A. / Gerthsen, D. / Grau, M. / Amann, M.-C. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 151
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FEGTEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVDBenedetti, A. / Norris, D. J. / Hetherington, C. J. D. / Cullis, A. G. / Robbins, D. J. / Wallis, D. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 155
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Analysis of terahertz-emitting SiGe quantum cascade structures by transmission electron microscopyLiew, S. L. / Norris, D. J. / Cullis, A. G. / Kelsall, R. W. / Harrison, P. / Ikonic, Z. / Paul, D. J. / Lynch, S. A. / Bates, R. / Arnone, D. D. et al. | 2003
- 159
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Transmission electron microscopy of AlN/TiN superlattice coatings fabricated by pulsed laser depositionPankov, V. V. / Prince, R. H. / Couillard, M. / Botton, G. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 163
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Advanced TEM analysis of strain balanced Si/SiGe resonant tunnelling diode structuresChang, A. C. K. / Norris, D. J. / Cullis, A. G. / Paul, D. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 167
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TEM study of (Ga,Al)N nanocolumns and embedded GaN nanodiscsTrampert, A. / Ristic, J. / Jahn, U. / Calleja, E. / Ploog, K. H. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 171
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The formation and characterization of ZnO nanostructuresAl-Jassim, M. M. / Yan, Y. / Romero, M. J. / Liu, P. / To, B. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 175
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Defects in GaN: core structure of screw dislocationsLiliental-Weber, Z. / Zakharov, D. / Jasinski, J. / O Keefe, M. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 183
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High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE proceduresCarlino, E. / Furlanetto, D. / Colli, A. / Franciosi, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 187
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Formation mechanism of the pairs of stacking faults in pseudomorphic ZnSe epilayers on GaAs substratesOhno, Y. / Adachi, N. / Takeda, S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 191
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The effect of the static atomic displacements on the structure factors of low intensity reflections in III-V alloysGlas, F. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 195
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Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growthNufris, S. / Arciprete, F. / Patella, F. / Placidi, E. / Fanfoni, M. / Sgarlata, A. / Balzarotti, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 199
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Anomalous relaxation in combined low and high temperature growth of InGaAs/GaAs epilayersHerrera, M. / Gonzalez, D. / Gonzalez, M. U. / Gonzalez, Y. / Gonzalez, L. / Garcia, R. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 203
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Theoretical and experimental limits of quantitative analysis of strain and chemistry of InGaAs/GaAs layers using (200) dark-field TEM imagingCagnon, J. / Buffat, P. A. / Stadelmann, P. A. / Leifer, K. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 207
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TEM determination of the misfit stress in GaInAs/(001)GaAs epitaxial systems by specimen curvature analysisRocher, A. / Cabie, M. / Ponchet, A. / Carrere, H. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 213
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Thickness influence on spinodal decomposition in In~0~.~2Ga~0~.~8As/GaAs low temperature growthHerrera, M. / Gonzalez, D. / Gonzalez, M. U. / Gonzalez, Y. / Gonzalez, L. / Garcia, Y. R. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 217
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Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substratePatriarche, G. / Largeau, L. / Harmand, J.-C. / Gollub, D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 221
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LACBED analysis of the chemical composition of compound semiconductor strained layersJacob, D. / Lefebvre, A. / Chauveau, J. M. / Trampert, A. / Tournie, E. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 225
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Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wellsGass, M. H. / Bullough, T. J. / Papworth, A. / Thomas, S. / Joyce, T. B. / Chalker, P. R. / Mazzucato, S. / Hepburn, C. / Balkan, N. / Royal Microscopical Society et al. | 2003
- 229
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X-ray microdiffraction studies of InGaAsP selective-area growth layersKimura, S. / Izumi, K. / Tsusaka, Y. / Kagoshima, Y. / Matsui, J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 233
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Unified polarity analysis of <110> and <001> Sphalerite-type crystal samples using Bragg-line contrast rulesSpiecker, E. / Jager, C. / Lu, H. / Jager, W. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 239
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Facet formation in Si layers selectively grown on patterned substrates studied by different electron microscopy techniquesZhi, D. / Wei, M. / Jones, T. S. / Pashley, D. W. / Zhang, J. / Joyce, B. A. / Dunin-Borkowski, R. E. / Midgley, P. A. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 243
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Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial systemGray, J. L. / Hull, R. / Singh, N. / Elzey, D. M. / Floro, J. A. / Kumar, P. / Pernell, T. L. / Bean, J. C. / Vandervelde, T. / Royal Microscopical Society et al. | 2003
- 247
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Dislocation density and structure in Si~1~-~xGe~x buffer layers deposited by LEPECVDBollani, M. / Muller, E. / Isella, G. / Signoretti, S. / Chrastina, D. / von Kanel, H. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 251
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Local compositional analysis of self-assembled GeSi/Si nanoclusters by scanning auger microscopy with nanometre lateral resolutionMaximov, G. A. / Nikolitchev, D. E. / Filatov, D. O. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 255
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The generation of an optimised SiGe superlattice: growth, structure and optical propertiesWerner, P. / Zakharov, N. D. / Talalaev, V. G. / Cirlin, G. E. / Gerth, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 259
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Quantitative large-area analysis of misfit dislocation arrays by bend contour contrast evaluationSpiecker, E. / Jager, W. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 265
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TEM characterization of epitaxial 3C-SiC grains on Si (100) and Si (111)Makkai, Z. / Pecz, B. / Vida, G. / Deak, P. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 269
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Mechanisms for the formation of inversion domains in GaNSanchez, A. M. / Dimitrakopoulos, G. P. / Ruterana, P. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 273
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Atomic structure of Mg-induced pyramidal inversion domains in bulk GaNVennegues, P. / Leroux, M. / Dalmasso, S. / Benaissa, M. / De Mierry, P. / Beaumont, B. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 277
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Indium distribution and influence of internal fields in InGaN quantum wellsRossi, F. / Armani, N. / Ferrari, C. / Grillo, V. / Lazzarini, L. / Passaseo, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 281
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Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEMBarnard, J. S. / Kappers, M. J. / Thrush, E. J. / Humphreys, C. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 285
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In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorptionGerthsen, D. / Hahn, E. / Potin, V. / Rosenauer, A. / Kuhn, B. / Off, J. / Scholz, F. / Dussaigne, A. / Grandjean, N. / Royal Microscopical Society et al. | 2003
- 289
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Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wellsBoyall, N. M. / Durose, K. / Liu, T. Y. / Trampert, A. / Watson, I. M. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 293
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Simultaneous composition and cathodoluminescence spectral mapping of III-nitride structuresEdwards, P. R. / Martin, R. W. / O Donnell, K. P. / Watson, I. M. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 297
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Nano-clustering anomalies in InGaN/GaN multiple quantum well structuresO Neill, J. P. / Ross, I. M. / Cullis, A. G. / Wang, T. / Parbrook, P. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 301
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Quantitative analysis of AlN/GaN HRTEM imagesSarigiannidou, E. / Rouviere, J. L. / Radtke, G. / Bayle-Guillemaud, P. / Monroy, E. / Daudin, B. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 305
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Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layersPonce, A. / Molina, S. I. / Garcia-Lopez, J. / Battistig, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 309
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Effects of AlN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVDMakaronidis, G. / McAleese, C. / Barnard, J. S. / Humphreys, C. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 313
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Analysis of [0001] tilt grain boundaries in GaNChen, J. / Ruterana, P. / Nouet, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 317
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The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressureWojtowicz, T. / Ruterana, P. / Twigg, M. E. / Henry, R. L. / Koleske, D. D. / Wickenden, A. E. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 321
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Microstructure and optical properties of ELO-GaN layers grown by hydride vapor phase epitaxyGradecak, S. / Albrecht, M. / Strunk, H. P. / Martin, D. / Napierala, J. / Ilegems, M. / Stadelmann, P. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 325
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Effect of anneal duration on GaN nuclei and subsequent epilayersLada, M. / Cullis, A. G. / Parbrook, P. J. / Whitehead, M. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 329
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Common methods for the preparation of clean A- and B-type GaN surfaces assessed by STM, RHEED and XPSOliver, R. A. / Norenberg, C. / Martin, M. G. / Crossley, A. / Castell, M. R. / Briggs, G. A. D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 333
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Photoluminescence mapping of GaN epilayers with different degrees of order of mosaic structureShmidt, N. M. / Aliev, G. / Besul kin, A. N. / Dunaevsky, M. S. / Kolmakov, A. G. / Loskutov, A. V. / Lundin, W. V. / Sakharov, A. V. / Usikov, A. S. / Wolverson, D. et al. | 2003
- 337
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Electron-beam-induced modifications of electronic properties in GaN-based quantum well structuresJahn, U. / Dhar, S. / Waltereit, P. / Kostial, H. / Watson, I. M. / Fujiwara, K. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 341
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Two-photon fluorescence imaging of gallium nitride micro-LED arraysMcConnell, G. / Gu, E. / Griffin, C. / Jeon, C. W. / Choi, H. W. / Gurney, A. M. / Girkin, J. M. / Dawson, M. D. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 345
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Characterization of GaN p-n diodes using deep level transient Fourier spectroscopyAsghar, M. / Muret, P. / Beaumont, B. / Gibart, P. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 351
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Crack nuclei in AlGaN epitaxial layersMurray, R. T. / Parbrook, P. J. / Hill, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 355
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Cracking of III-nitride multiple heterostructures grown by MOVPE on 6H-SiC and alpha-Al~2O~3Hasenkopf, A. / Phillipp, F. / Moutchnik, G. / Ivanov, A. / Scholz, F. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 359
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Structural analysis of polycrystalline GaN layers grown on glass substratesNouet, G. / Ruterana, P. / Tampo, H. / Asahi, H. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 363
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Scanning capacitance microscopy of semiconductors for process and device characterisationRaineri, V. / Goghero, D. / Giannazzo, F. / Mirabella, S. / Priolo, F. / Napolitani, E. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 373
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Quantitative TEM analysis of structural defects in helium implanted siliconHueging, N. / Tillmann, K. / Luysberg, M. / Trinkaus, H. / Urban, K. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 379
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Transmission electron microscopy study of helium implanted siliconFrabboni, S. / Corni, F. / Tonini, R. / Nobili, C. / Ottaviani, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 383
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Ordered helium bubbles and nanocrystallites in amorphous Si induced by low-energy He ions implantationReutov, V. F. / Sokhatsky, A. S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 389
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Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structuresNorris, D. J. / Cullis, A. G. / Olsen, S. H. / O Neill, A. G. / Zhang, J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 393
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Application of spectrum imaging to the study of high-k dielectric stacksCraven, A. J. / MacKenzie, M. / McComb, D. W. / Hamilton, D. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 397
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A microstructural study of the thermal stability of atomic layer deposited Al~2O~3 thin filmsNistor, L. / Richard, O. / Zhao, C. / Bender, H. / Stesmans, A. / Van Tendeloo, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 401
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Investigations of bonding at an aluminum (III) oxide membrane in Si using ELNES separationStoger-Pollach, M. / Schattschneider, P. / Schneider, J. / Gall, S. / Zandbergen, H. W. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 405
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Imaging of ultrathin silicon dioxide layers in semiconducting devices by means of energy-filtered transmission electron microscopySchaffer, B. / Grogger, W. / Hofer, F. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 409
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Structural and compositional investigation of high k praseodymium oxide films deposited by MOCVDNigro, R. L. / Toro, R. / Malandrino, G. / Bongiorno, C. / Raineri, V. / Fragala, I. L. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 413
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The effects of resist strip processing on a porous low k dielectric oxideDonohue, H. / Buchanan, K. / Dunin-Borkowski, R. E. / Newcomb, S. B. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 417
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Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurementsHaarahiltunen, A. / Vainola, H. / Yli-Koski, M. / Ruotsalainen, R. / Saarnilehto, E. / Kaarlela, S. / Haimi, E. / Sinkkonen, J. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 421
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Correlation between G-line luminescence and structure of grain boundaries in electron-irradiated EFG siliconVernon-Parry, K. D. / Galloway, S. / Davies, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 425
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Detailed geometrical characterisation of a surfacial Si (100) grain boundaryRousseau, K. / Morniroli, J. P. / Rouviere, J. L. / Fournel, F. / Eymery, J. / Moriceau, H. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 429
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Structural properties of silicon nanostructures determined by energy-filtered transmission electron microscopyBoninelli, S. / Iacona, F. / Bongiorno, C. / Franzo, G. / Priolo, F. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 433
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Noble metal distribution in mesoporous silica as a selective active filter for semiconductor gas sensorsArbiol, J. / Cabot, A. / Morante, J. R. / Chen, F. / Liu, M. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 437
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Nanoporous silicon fabricated by a novel method with cation complexes in hydrofluoric acid solutionsMatsuura, T. / Liu, X. W. / Braithwaite, N. S. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 441
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TEM study of GaAs implanted with high dose nitrogen ionsPecz, B. / Toth, L. / Dobos, L. / Szuts, T. / Heera, V. / Skorupa, W. / Dekorsy, T. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 445
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Determination of the polarity of the GaAs (001) rosette arms by convergent beam electron diffractionLargeau, L. / Patriarche, G. / Glas, F. / Le Bourhis, E. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 449
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Ion beam induced charge microscopy imaging of CVD diamondSimon, A. / Sellin, P. / Lohstroh, A. / Jeynes, C. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 453
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Structural characterisation of advanced silicidesBender, H. / Richard, O. / Nistor, L. / Gutakovskii, A. / Stuer, C. / Detavernier, C. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 463
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Direct observations of the nucleation and growth of NiSi~2 on Si (001)Yeadon, M. / Nath, R. / Boothroyd, C. B. / Chi, D. Z. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 467
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Investigation of interfacial reaction of Ni on epitaxial Si~1~-~xGe~x (001) layersOk, Y.-W. / Kim, S.-H. / Song, Y.-J. / Shim, K.-H. / Seong, T.-Y. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 471
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Phase formation in Ti (Ta)-Ni and Co-Ti films deposited on (001)Si in a N~2 ambientVasiliev, A. L. / Aindow, M. / Vasiliev, A. G. / Horin, I. A. / Orlikovsky, A. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 475
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Role of a Mo interlayer on the thermal stability of nickel silicidesOk, Y. W. / Choi, C. J. / Seong, T.-Y. / Thanachayanont, C. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 479
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Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structuresKatcki, J. / Ratajczak, J. / Laszcz, A. / Phillipp, F. / Dubois, E. / Larrieu, G. / Penaud, J. / Baie, X. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 483
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TEM studies of multilayer ohmic contacts to n-type AlGaN/GaNFay, M. W. / Moldovan, G. / Harrison, I. / Balmer, R. S. / Soley, D. E. J. / Hilton, K. P. / Hughes, B. T. / Uren, M. J. / Martin, T. / Brown, P. D. et al. | 2003
- 487
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Physical failure analysis in semiconductor industry - challenges to microscopyZschech, E. / Langer, E. / Meyer, A. M. / Engelmann, H. J. / Stegmann, H. / Geisler, H. / Tracy, B. / Schneider, G. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 497
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Electron holography of biased semiconductor devicesTwitchett, A. C. / Dunin-Borkowski, R. E. / Midgley, P. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 501
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Simulations of the electrostatic potential distribution in a TEM sample of a semiconductor deviceSomodi, P. K. / Dunin-Borkowski, R. E. / Twitchett, A. C. / Barnes, C. H. W. / Midgley, P. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 505
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On the interpretation of out-of-focus TEM observations of reverse-biased p-n junctionsFazzini, P. F. / Merli, P. G. / Pozzi, G. / Roncaglia, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 509
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SEM-EBIC studies of electrostatically damaged Si integrated circuitsRussell, J. D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 513
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Surface potential and surface photovoltage of oxide and nitride coated multicrystalline silicon solar cells using a scanning Kelvin probeForsyth, G. / Baikie, I. / van der Heide, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 519
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Variable temperature surface photovoltage imaging of oxide and nitride coated multicrystalline silicon solar cellsBaikie, I. / Forsyth, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 523
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Prospects for single atom location and identification with aberration-corrected STEMLupini, A. R. / Varela, M. / Borisevich, A. Y. / Peng, Y. / Pennycook, S. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 533
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UK SuperSTEM: capabilities, prospects and first resultsFalke, U. / Bleloch, A. L. / Falke, M. / Kolodzie, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 537
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Local investigation of electronic structure modulation in BaPb~xBi~1~-~xO~3 via highly spatially resolved low-loss electron energy loss spectroscopyGutierrez-Sosa, A. / Bangert, U. / Flavell, W. R. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 541
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3D analysis of semiconductor structures using STEM tomographyYates, T. J. V. / Weyland, M. / Laffont, L. / Zhi, D. / Dunin-Borkowski, R. E. / Midgley, P. A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 545
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Dopant profile investigation in low-energy scanning transmission electron microscopyCorticelli, F. / Merli, P. G. / Migliori, A. / Morandi, V. / Tundo, S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 549
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SEM CL studies on dynamics and recombination activity of glide dislocations in zincblende and wurtzite semiconductor crystalsSchreiber, J. / Vasnyov, S. / Hoering, L. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 555
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Electron probe microanalysis of rare earth doped gallium nitride light emittersDalmasso, S. / Martin, R. W. / Edwards, P. R. / O Donnell, K. P. / Pipeleers, B. / Vantomme, A. / Nakanishi, Y. / Wakahara, A. / Yoshida, A. / RENiBEl Network et al. | 2003
- 559
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Investigations on 0.9eV cathodoluminescence emission in GaAsRadhakrishnan, J. K. / Durai, L. / Armani, N. / Salviati, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 565
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Al.L.E.S.: A random walk simulation approach to cathodoluminescence processes in semiconductorsGrillo, V. / Armani, N. / Rossi, F. / Salviati, G. / Yamamoto, N. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 569
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Quantitative analysis of linear polarization by means of polarized cathodoluminescence spectroscopy in a TEMOhno, Y. / Takeda, S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 573
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SEM-Raman spectroscopyBrooker, A. D. / Leak, D. M. / Lainchbury, M. J. / Bennett, B. / Dawe, C. J. / Hill, M. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 577
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EBIC study of Au / n-type GaN Schottky contactsMoldovan, G. / Harrison, I. / Brown, P. D. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 581
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EBIC study of extended defects in InGaAs/InGaAs strain-balanced MQWs for thermophotovoltaic applicationsTundo, S. / Mazzer, M. / Nasi, L. / Salviati, G. / Lazzarini, L. / Torsello, G. / Rohr, C. / Connolly, J. / Abbott, P. / Barnham, K. W. J. et al. | 2003
- 585
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A novel method of extracting material parameters from within a confined region with the use of EBICWu, D. / Ong, V. K. S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 589
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Modelling the SEM-REBIC charge collection contrast in ZnO varistorsWojcik, A. G. / Wojcik, L. E. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 593
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Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscopeKazemian, P. / Schonjahn, C. / Humphreys, C. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 597
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SEM investigations of individual extended defects in GaN epi-layersShmidt, N. M. / Sirotkin, V. V. / Usikov, A. S. / Yakimov, E. B. / Zavarin, E. E. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 601
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Effect of excess tellurium on optical and thermoelectric properties of Sb~2Te~3 crystalsDhar, S. N. / Desai, C. F. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 607
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Monte Carlo calculations of X-rays generation for electron beams with energies up to 500 keVoltsKlimo, O. / Napchan, E. / Limpouch, J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 611
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3D determination of a MOSFET gate morphology by FIB tomographyInkson, B. J. / Olsen, S. / Norris, D. J. / O Neill, A. G. / Mobus, G. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 617
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Novel FIB-TEM preparation methods for semiconductor device characterisation and failure analysisDonnet, D. M. / De Veirman, A. E. M. / Otterloo, B. / Roberts, H. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 621
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Artefacts in germanium transmission electron microscope specimens prepared by focused ion beam millingMunroe, P. R. / Rubanov, S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 625
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Formation of self-organized nanostructures on Ge during focused ion beam sputteringZhou, W. / Cuenat, A. / Aziz, M. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 629
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Recent developments in automated sample preparation for FESEMCerchiara, R. R. / Fischione, P. E. / Gronsky, J. J. / Hein, W. F. / Martin, D. D. / Matesa, J. M. / Robins, A. C. / Smith, D. W. / Royal Microscopical Society / Institute of Physics et al. | 2003
- 633
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Nanomechanical imaging of multi-walled carbon nanotubesMuthuswami, L. / Ajayan, P. M. / Geer, R. E. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 637
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Scanning probe studies of atomically engineered silicon and sapphire substratesChang, K.-C. / Lee, D. / Umbach, C. C. / Blakely, J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 641
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Simultaneous potential and dopant mapping at p-n junctions using scanning tunnelling microscopyJager, N. D. / Marso, M. / Urban, K. / Weber, E. R. / Ebert, P. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 645
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Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopyMaknys, K. / Douheret, O. / Anand, S. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 649
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Scanning capacitance microscopy study of Si devicesLim, V. S.-W. / Jiang, Y.-Y. / Trigg, A. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 653
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Cross-sectional STM on InGaAs/InAlAs laser structuresOffermans, P. / Koenraad, P. M. / Wolter, J. H. / Song, J. D. / Kim, J. M. / Bae, S. J. / Lee, Y. T. / Beck, M. / Aellen, T. / Faist, J. et al. | 2003
- 657
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Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxyLiu, C. / Deatcher, C. J. / Cheong, M. G. / Watson, I. M. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 661
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Creating oxide dot arrays on III-V semiconductors by AFM lithographyStadelmann, T. O. / Nicholas, R. J. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 665
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AFM oxidation of Ti for nanoscale IC applicationsHill, D. / Sadewasser, S. / Aymerich, X. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003
- 669
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Kelvin probe microscopy of localised potentials induced in non-conductive materials by a focused ion beamStevens-Kalceff, M. A. / Rubanov, S. / Munroe, P. R. / Royal Microscopical Society / Institute of Physics / Materials Research Society et al. | 2003