2001 6th International Symposium on Plasma- and Process-Induced Damage : May 13-15, 2001, Monterey, California, USA (Englisch)
- Neue Suche nach: International Symposium on Plasma Process-Induced Damage
- Neue Suche nach: American Vacuum Society
- Neue Suche nach: IEEE Electron Devices Society
- Neue Suche nach: Ōyō Butsuri Gakkai
- Neue Suche nach: Gabriel, Calvin T.
- Neue Suche nach: Engelhardt, Manfred
- Neue Suche nach: Hook, Terence
- Neue Suche nach: International Symposium on Plasma Process-Induced Damage
- Neue Suche nach: American Vacuum Society
- Neue Suche nach: IEEE Electron Devices Society
- Neue Suche nach: Ōyō Butsuri Gakkai
2001
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ISBN:
- Konferenzband / Elektronische Ressource
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Titel:2001 6th International Symposium on Plasma- and Process-Induced Damage : May 13-15, 2001, Monterey, California, USA
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Weitere Titelangaben:Plasma- and process-induced damage
Plasma process induced-damage
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Beteiligte:
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Kongress:International Symposium on Plasma Process-Induced Damage ; 6th
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Verlag:
- Neue Suche nach: Northern California Chapter of the American Vacuum Society
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Erscheinungsort:Santa Clara, Calif
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Erscheinungsdatum:2001
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Format / Umfang:1 Online-Ressource ([5], i, 128 pages)
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Anmerkungen:illustrations
"IEEE Catalog Number (softbound) 01TH8538 ; IEEE Catalog Number (CD-ROM) 01TH8538C"--Title page verso
Includes bibliographical references and author index
Previous Symposium entitled: International Symposium on Plasma Induced-Damage -
ISBN:
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Medientyp:Konferenzband
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Format:Elektronische Ressource
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Sprache:Englisch
- Neue Suche nach: 621.3815/2
- Weitere Informationen zu Dewey Decimal Classification
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Schlagwörter:
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Klassifikation:
DDC: 621.3815/2 -
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Interconnect limits on gigascale integration (GSI)Meindl, J.D. et al. | 2001
- 2
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Fundamental limitations in the design of front end and back end plasma etch processesJoubert, O. / Vallier, L. / Foucher, J. / Fuard, D. / Cunge, G. / Assous, M. et al. | 2001
- 8
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Plasma Charging Damage Issues in Copper Single and Dual Damascene, Oxide and Low-kappa Dielectric InterconnectsVan den Bosch, G. / De Jaeger, B. / Tokei, Z. / Groeseneken, G. / American Vacuum Society et al. | 2001
- 8
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Plasma charging damage issues in copper single and dual damascene, oxide and low-k dielectric interconnectsVan den Bosch, G. / De Jaeger, B. / Tokei, Z. / Groeseneken, G. et al. | 2001
- 12
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Instability Trade-Off of Inter-Layer or Inter-Metal Dielectrics Formation with Low- kappa Dielectrics on Active and Field Device's CharacteristicsChen, M. J. / Shih, J. R. / Yu, K. F. / Hsieh, C. C. / Sung, W. L. / Lin, F. S. / Chu, L. H. / Shiue, R. Y. / Peng, Y. K. / Yue, J. T. et al. | 2001
- 12
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Instability trade-off of inter-layer or inter-metal dielectrics formation with low-k dielectrics on active and field device's characteristicsChen, M.J. / Shih, J.R. / Yu, K.F. / Hsieh, C.C. / Sung, W.L. / Lin, F.S. / Chu, L.H. / Shiue, R.Y. / Peng, Y.K. / Yue, J.T. et al. | 2001
- 16
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Relation between plasma process-induced oxide failure fraction and antenna ratioZhichun Wang, / Scarpa, A. / Salm, C. / Kuper, F. et al. | 2001
- 20
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Gate oxide damage: a brief history and a look aheadGabriel, C.T. et al. | 2001
- 25
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Plasma-assisted wafer de-chucking (power-lift) process induced charging damageCheung, K.P. / Steiner, K.G. et al. | 2001
- 29
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Characterization of CF/sub 4/ plasma induced damage during dry ashing and residue removal processWang, L.S. / Wei, P.C. / Chan, T.S. / Chang, Y.P. / Yen, C.L. / Yang, W.C. / Kuan, H. et al. | 2001
- 29
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Characterization of CF~4 Plasma Induced Damage During Dry Ashing and Residue Removal ProcessWang, L. S. / Wei, P. C. / Chang, T. S. / Chang, Y. P. / Yen, C. L. / Yang, W. C. / Kuan, H. / American Vacuum Society et al. | 2001
- 33
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Plasma charging damage on silicon surface during reverse-AA oxide etching in poly-buffered STI (PB-STI) isolation processLiou, Y.H. / Chen, Y.S. / Wu, C.S. / Tsai, C.S. / Chi, M. et al. | 2001
- 36
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Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistorsMeng-Fan Wang, / Ya-Chen Kao, / Tiao-Yuan Huang, / Horng-Chih Lin, / Chun-Yen Chang, et al. | 2001
- 40
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Correlation between soft breakdown and plasma process induced damageCellere, G. / Valentini, M.G. / Paccagnella, A. et al. | 2001
- 44
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Yield and reliability effects of interlevel dielectric plasma enhanced deposition induced charging damageScarpa, A. / Van Marwijk, L. / Peters, W. / Boter, D. / Kuper, F.G. et al. | 2001
- 48
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Plasma Induced Damage Testing Methodology for the 0.13 mum CMOS TechnologyCismaru, C. / Ramanathan, V. / American Vacuum Society et al. | 2001
- 48
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Plasma induced damage testing methodology for the 0.13 /spl mu/m CMOS technologyCismaru, C. / Ramanathan, V. et al. | 2001
- 52
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In-Line Plasma Induced Charging Monitor for 0.15 mum Polysilicon Gate EtchingChong, D. / Yoo, W. J. / Ang, T. C. / Loong, S. Y. / Cha, R. / Lee, P. H. / Layadi, N. / Chan, L. / See, A. / American Vacuum Society et al. | 2001
- 52
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In-line plasma induced charging monitor for 0.15 /spl mu/m polysilicon gate etchingChong, D. / Won Jong Yoo, / Ting Cheong Ang, / Sang Yee Loong, / Cha, R. / Pin Hian Lee, / Layadi, N. / Lap Chan, / See, A. et al. | 2001
- 56
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The impact of plasma charging damage on the RF performances of deep-submicron silicon MOSFETPantisano, L. / Cheung, K.P. / Smith, P. / Chen, C.Y. / Hwang, D. / Fiorillo, S. / Keller, R. / Paccagnella, A. et al. | 2001
- 60
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TRG-OES measurements of electron temperatures during fluorocarbon plasma etching of SiO/sub 2/ damage test wafersSchabel, M.J. / Donnelly, V.M. / Cheung, K.P. / Kornblit, A. / Layadi, N. / Tai, W.W. et al. | 2001
- 60
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TRG-OES Measurements of Electron Temperatures During Fluorocarbon Plasma Etching of SiO~2 Damage Test WafersSchabel, M. J. / Donnelly, V. M. / Cheung, K. P. / Kornblit, A. / Layadi, N. / Tai, W. W. / American Vacuum Society et al. | 2001
- 64
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Plasma-induced charging reduction through ion-ion synchronous biasKanakasabapathy, S.K. / Overzet, L.J. / Cheung, K.P. / Malyshev, M.V. et al. | 2001
- 68
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Modification of charge produced during plasma exposure in aluminum oxide by vacuum ultraviolet radiationLauer, J.L. / Shohet, J.L. / Cismaru, S.C. / Hansen, R.W. et al. | 2001
- 72
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Plasma Charging and Mobile Ions on the Data Retention of 0.25 mum FLASH MemoryLiou, J. J.-W. / Lin, P.-C. / Chen, W.-M. / Lin, J. / Huang, C.-J. / Chen, H.-H. / Hong, G. / American Vacuum Society et al. | 2001
- 72
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Plasma charging and mobile ions on the data retention of 0.25 /spl mu/m flash memoryLiou, J.J.-W. / Pao-Chuan Lin, / Wei-Min Chen, / Lin, J. / Chih-Jen Huang, / Hwi-Huang Chen, / Hong, G. et al. | 2001
- 76
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Effect of reactive ion etching chemistry on plasma damage in EPROM cellsBarlingay, C.K. / Yach, R. / Lukaszek, W. et al. | 2001
- 80
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Hot carrier lifetime and dielectric breakdown in MOSFETs processed with deuteriumClark, W.F. / Cartier, E. / Wu, E.Y. et al. | 2001
- 86
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Quality degradation for gate oxides grown on slightly damaged silicon surfacesShuto, S. / McVittie, J.P. et al. | 2001
- 90
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Challenges of High- kappa Gate Dielectrics for Future MOS DevicesSuchle, J. S. / Vogel, E. M. / Edelstein, M. D. / Richter, C. A. / Nguyen, N. V. / Levin, I. / Kaiser, D. L. / Wu, H. / Bernstein, J. B. / American Vacuum Society et al. | 2001
- 90
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Challenges of high-k gate dielectrics for future MOS devicesSuehle, J.S. / Vogel, E.M. / Edelstein, M.D. / Richter, C.A. / Nguyen, N.V. / Levin, I. / Kaiser, D.L. / Wu, H. / Bernstein, J.B. et al. | 2001
- 94
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New elements in Si technology-a contamination risk?Pamler, W. et al. | 2001
- 100
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Contamination issues in plasma etching of non-volatile materials: managing by-product depositionOlson, K.A. / Jerde, L. / Almerico, J.P. et al. | 2001
- 104
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Plasma charging damage in SOI technologyMocuta, A.C. / Hook, T.B. / Chou, A.I. / Wagner, T. / Stamper, A.K. / Khare, M. / Gambino, J.P. et al. | 2001
- 108
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A new current-balance model for predicting charging damage during high-temperature plasma processesMise, N. / Hirasawa, S. / Tamaru, T. / Okudaira, S. / Oomori, K. / Usui, T. / Maeno, R. / Saikawa, T. et al. | 2001
- 112
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Role of source/drain junction on plasma induced gate charging damage in N MOSFETLin, W. / Sery, G. et al. | 2001
- 116
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The effect of substrate connections on charging potentials and current densitiesLukaszek, W. / Gabriel, C.T. et al. | 2001
- 120
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Charging damage in floating metal-insulator-metal capacitorsAckaert, J. / Zhichun Wang, / De Backer, E. / Coppens, P. et al. | 2001
- 124
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Dependence of plasma process induced damage on the transistor gate areaSung-Hyung Park, / Hi-Deok Lee, / Key-Min Lee, / Myoung-Jun Jang, / Joo-Hyoung Lee, / Geun-Suk Park, / Ki-Seok Yoon, / Jung-Hoon Choi, / Young-Jin Park, / Hee-Goo Youn, et al. | 2001
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Author index| 2001
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2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538)| 2001