Noncontact photothermal infrared radiometric deep‐level transient spectroscopy of GaAs wafers (Englisch)

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In: Applied Physics Letters   ;  67 ,  11  ;  1582-1584  ;  1995

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A novel infrared photothermal radiometric deep‐level transient spectroscopy (PTR‐DLTS) has been developed for semiconductor noncontact characterization and applied to GaAs wafer diagnostics. The technique is based on rate‐window detection combined with wafer temperature ramping. Unlike other deep‐level methodologies, PTR‐DLTS should be easily implemented remotely for on‐line or off‐line impurity/electronic defect diagnostics and enjoys high spectral peak separation and spatial resolution limited only by the pump laser beam focus (≥1 μm). The impurity level in a Cr‐compensated semi‐insulating GaAs wafer has been detected at ∼375 K using the 514 nm line of an Ar+ laser. A Te‐doped GaAs sample exhibited behavior consistent with photoinjected carrier lifetime enhancement due to surface state (trap) thermal filling at elevated temperatures. © 1995 American Institute of Physics.

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