The present invention provides a shower head for a chemical vapor deposition system, and a chemical vapor deposition device including same, the shower head comprising: a chamber; an inlet for injecting a process gas into the chamber; a second gas distributor plate arranged at the bottom of the chamber; and a first gas distributor plate stacked on the upper surface of the second gas distributor plate, wherein the first gas distributor plate includes multiple gas distribution holes, the second gas distributor plate includes multiple gas injection holes, and a distribution channel is arranged at the boundary surface between the first gas distributor plate and the second gas distributor plate so as to distribute a process gas, introduced through each gas distribution hole of the first gas distributor plate, to two to eight gas injection holes of the second gas distributor plate.
La présente invention concerne une pomme de douche pour un système de dépôt chimique en phase vapeur, et un dispositif de dépôt chimique en phase vapeur la comprenant, la pomme de douche comprenant : une chambre ; une entrée pour injecter un gaz de traitement dans la chambre ; une seconde plaque de distribution de gaz placée au fond de la chambre ; et une première plaque de distribution de gaz empilée sur la surface supérieure de la seconde plaque de distribution de gaz, la première plaque de distribution de gaz comprenant de multiples trous de distribution de gaz, la seconde plaque de distribution de gaz comprenant de multiples trous d'injection de gaz, et un canal de distribution étant agencé au niveau de la surface frontière entre la première plaque de distribution de gaz et la seconde plaque de distribution de gaz de façon à distribuer un gaz de traitement, introduit à travers chaque trou de distribution de gaz de la première plaque de distribution de gaz, vers deux à huit trous d'injection de gaz de la seconde plaque de distribution de gaz.
본 발명은, 챔버; 상기 챔버에 대한 프로세스 가스 주입구; 상기 챔버의 하단부에 구비된 제2 가스분배판; 및 상기 제2 가스분배판 상부면에 적층된 제1 가스분배판;을 포함하며, 상기 제1 가스분배판은 다수개의 가스분배홀을 구비하며, 상기 제2 가스분배판은 다수개의 가스분사구를 구비하며, 상기 제1 가스분배판과 제2 가스분배판 경계면에는 제1 가스분배판의 각각의 가스분배홀로 유입되는 프로세스 가스를 제2 가스분배판의 2~8개의 가스분사구로 분기시키는 분기유로가 구비된 화학 기상 증착 시스템용 샤워헤드 및 그를 구비한 화학 기상 증착 장치를 제공한다.