Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage (Englisch)
- Neue Suche nach: Chabak, Kelson D
- Neue Suche nach: Chabak, Kelson D
- Neue Suche nach: Moser, Neil
- Neue Suche nach: Green, Andrew J
- Neue Suche nach: Walker, Dennis E
- Neue Suche nach: Tetlak, Stephen E
- Neue Suche nach: Heller, Eric
- Neue Suche nach: Crespo, Antonio
- Neue Suche nach: Fitch, Robert
- Neue Suche nach: McCandless, Jonathan P
- Neue Suche nach: Leedy, Kevin
- Neue Suche nach: Baldini, Michele
- Neue Suche nach: Wagner, Gunter
- Neue Suche nach: Galazka, Zbigniew
- Neue Suche nach: Li, Xiuling
- Neue Suche nach: Jessen, Gregg
In:
Applied physics letters
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109
, 21
;
2016
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
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Beteiligte:Chabak, Kelson D ( Autor:in ) / Moser, Neil / Green, Andrew J / Walker, Dennis E / Tetlak, Stephen E / Heller, Eric / Crespo, Antonio / Fitch, Robert / McCandless, Jonathan P / Leedy, Kevin
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Erschienen in:Applied physics letters ; 109, 21
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Verlag:
- Neue Suche nach: AIP
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Erscheinungsort:Melville, NY
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Erscheinungsdatum:2016
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ISSN:
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ZDBID:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/3400
- Neue Suche nach: 33.00
- Weitere Informationen zu Basisklassifikation
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Datenquelle:
Inhaltsverzeichnis – Band 109, Ausgabe 21
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