Stress induced texture formation in surface crystallized SiO2 glass (Englisch)

Nationallizenz
In: CrystEngComm   ;  15 ,  13  ;  2392-2400  ;  2013
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  • Aufsatz (Zeitschrift)  /  Elektronische Ressource

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Solid samples of pure SiO2-glass are annealed at 1400 °C for 0.5–8 h in order to grow high-cristobalite which transforms to low-cristobalite during cooling. Crystal orientations are analyzed using X-ray diffraction up to 900 °C and electron backscatter diffraction (EBSD). Tensions during phase transformation lead to 110- and 101-textures near the surface and local textures around major cracks. Throughout the crystallized layer (110)-twins are detected. EBSD-analysis of untreated surfaces is problematic due to a high degree of surface fracturing and very localized EBSD-pattern acquisition. A glass skin covering the crystals was not detected.

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Inside front cover
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Back cover
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