Zu diesem lizenzpflichtigen Artikel gibt es eine Open Access Version, die kostenlos und ohne Lizenzbeschränkung gelesen werden kann. Die Open Access Version kann inhaltlich von der lizenzpflichtigen Version abweichen.
Preisinformation
Bitte wählen Sie ihr Lieferland und ihre Kundengruppe
The low-temperature photo-emf spectra of Schottky diodes were used to study the energy spectrum of excitons in GaAs when the valence band degeneracy was lifted by the application of a uniaxial pressure along the (110) axis. The influence of the valence band splitting and of the overlap of the exciton lines on the energy separation between the ground n = 1 and excited n = 2 exciton states was considered for each of the split valence subbands. The experimental results were compared with theoretical estimates.