Threshold current for the onset of kirk effect in bipolar transistors with a fully depleted nonuniformly doped collector (Englisch)
- Neue Suche nach: Toorn, R. van der
- Neue Suche nach: Toorn, R. van der
In:
Electron Device Letters (IEEE)
;
28
, 1
;
54-57
;
2007
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Threshold current for the onset of kirk effect in bipolar transistors with a fully depleted nonuniformly doped collector
-
Beteiligte:Toorn, R. van der ( Autor:in )
-
Erschienen in:Electron Device Letters (IEEE) ; 28, 1 ; 54-57
-
Verlag:
-
Erscheinungsdatum:2007
-
Format / Umfang:4 Seiten, 7 Quellen
-
ISSN:
-
Coden:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 28, Ausgabe 1
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
What is in a Page Charge?Jindal, R. P. et al. | 2007
- 2
-
RF-Enhanced Contacts to Wide-Bandgap DevicesSimin, G. / Yang, Z.-J. et al. | 2007
- 5
-
Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation ModeKoudymov, A. / Wang, C.X. / Adivarahan, V. / Yang, J. / Simin, G. / Khan, M.A. et al. | 2007
- 8
-
DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer FusionChuanxin Lian, / Huili Xing, / Wang, C.S. / McCarthy, L. / Brown, D. et al. | 2007
- 11
-
Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi GateLiu, J. / Kwong, D.L. et al. | 2007
- 14
-
Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory DevicesZheng Wang, / Griffin, P.B. / McVittie, J. / Simon Wong, / McIntyre, P.C. / Nishi, Y. et al. | 2007
- 14
-
Resistive Switching Mechanism in Zn~xCd~1~-~xS Nonvolatile Memory DevicesWang, Z. / Griffin, P. B. / McVittie, J. / Wong, S. / McIntyre, P. C. / Nishi, Y. et al. | 2007
- 17
-
High-Performance Metal–Insulator–Metal Capacitors Using Amorphous $\hbox{BaSm}_{2}\hbox{Ti}_{4}\hbox{O}_{12}$ Thin FilmYoung Hun Jeong, / Jong Bong Lim, / Nahm, S. / Ho-Jung Sun, / Hwack Joo Lee, et al. | 2007
- 17
-
High-Performance Metal-Insulator-Metal Capacitors Using Amorphous BaSm~2Ti~4O~1~2 Thin FilmJeong, Y. H. / Lim, J. B. / Nahm, S. / Sun, H.-J. / Lee, H. J. et al. | 2007
- 21
-
Effect of F~2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate DielectricChang, M. / Jo, M. / Park, H. / Hwang, H. / Lee, B. H. / Choi, R. et al. | 2007
- 21
-
Effect of $\hbox{F}_{2}$ Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate DielectricMan Chang, / Minseok Jo, / Hokyung Park, / Hyunsang Hwang, / Byoung Hun Lee, / Rino Choi, et al. | 2007
- 24
-
High-kappa Al~2O~3-HfTiO Nanolaminates With Less Than 0.8-nm Equivalent Oxide ThicknessMikhelashvili, V. / Eisenstein, G. et al. | 2007
- 24
-
High-$\kappa$ $\hbox{Al}_{2}\hbox{O}_{3}{-}\hbox{HfTiO}$ Nanolaminates With Less Than 0.8-nm Equivalent Oxide ThicknessMikhelashvili, V. / Eisenstein, G. et al. | 2007
- 27
-
High-Quality Factor Electrolyte Insulator Silicon Capacitor for Wireless Chemical SensingGarcia-Canton, J. / Merlos, A. / Baldi, A. et al. | 2007
- 30
-
Robust Coupled-Quantum-Well Structure for Use in Electrorefraction ModulatorsRistic, S. / Jaeger, N.A.F. et al. | 2007
- 33
-
On-Pixel Voltage-Controlled Oscillator in Amorphous-Silicon Technology for Digital Imaging ApplicationsSanaie, G. / Karim, K.S. et al. | 2007
- 36
-
Low-Frequency Noise Characteristics in Strained-Si nMOSFETsYen Ping Wang, / San Lein Wu, / Shoou Jinn Chang, et al. | 2007
- 39
-
A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source/Drain (SARSD)Kow Ming Chang, / Gin Min Lin, / Cheng Guo Chen, / Hsieh, M.F. et al. | 2007
- 42
-
HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass SubstratesHyunsuk Kim, / Dong-Won Kim, / Kyoungah Cho, / Sangsig Kim, et al. | 2007
- 45
-
Evaluation of RF Capacitance Extraction for Ultrathin Ultraleaky SOI MOS DevicesChuanzhao Yu, / Zhang, J. / Yuan, J.S. / Duan, F. / Jayanarananan, S.K. / Marathe, A. / Cooper, S. / Pham, V. / Goo, J.-S. et al. | 2007
- 48
-
Long Retention of Gain-Cell Dynamic Random Access Memory With Undoped Memory NodeNishiguchi, K. / Fujiwara, A. / Ono, Y. / Inokawa, H. / Takahashi, Y. et al. | 2007
- 51
-
Time-Domain-Reflectometry for Capacitance–Voltage Measurement With Very High Leakage CurrentWang, Y. / Cheung, K.P. / Choi, R. / Brown, G.A. / Lee, B.-H. et al. | 2007
- 54
-
Threshold Current for the Onset of Kirk Effect in Bipolar Transistors With a Fully Depleted Nonuniformly Doped Collectorvan der Toorn, R. et al. | 2007
- 58
-
Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ($\sim$1.5 GPa) Channel StressSuthram, S. / Ziegert, J.C. / Nishida, T. / Thompson, S.E. et al. | 2007
- 58
-
Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High (∼1.5 GPa) Channel StressSuthram, S. / Ziegert, J. C. / Nishida, T. / Thompson, S. E. et al. | 2007
- 62
-
Electrical Characterization of ZrO~2/Si Interface Properties in MOSFETs With ZrO~2 Gate DielectricsLiu, C.-H. / Chiu, F.-C. et al. | 2007
- 62
-
Electrical Characterization of $\hbox{ZrO}_{2}/\hbox{Si}$ Interface Properties in MOSFETs With $\hbox{ZrO}_{2}$ Gate DielectricsChuan-Hsi Liu, / Fu-Chien Chiu, et al. | 2007
- 65
-
Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)Abelein, U. / Born, M. / Bhuwalka, K.K. / Schindler, M. / Schlosser, M. / Sulima, T. / Eisele, I. et al. | 2007
- 68
-
Bond Pad Design With Low Capacitance in CMOS Technology for RF ApplicationsYuan-Wen Hsiao, / Ming-Dou Ker, et al. | 2007
- 71
-
A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) SurfaceSong, G. / Ali, M.Y. / Tao, M. et al. | 2007
- 74
-
IEEE Electron Devices Society Meetings Calendar for 2007 (as of 01 December 2006)| 2007
- 76
-
IEEE Electron Device Letters Information for authors| 2007
- 77
-
Special issue on device technologies and circuit techniques for power management| 2007
- 79
-
2007 IEEE Compound Semiconductor IC Symposium| 2007
- 80
-
Table of contents| 2007
- C2
-
IEEE Electron Device Letters publication information| 2007