A Full-Range Drain Current Model for Double-Gate Junctionless Transistors (Englisch)
- Neue Suche nach: Duarte, J.P.
- Neue Suche nach: Choi, Sung-Jin
- Neue Suche nach: Choi, Yang-Kyu
- Neue Suche nach: Duarte, J.P.
- Neue Suche nach: Choi, Sung-Jin
- Neue Suche nach: Choi, Yang-Kyu
In:
IEEE Transactions on Electron Devices
;
58
, 12
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4219-4225
;
2011
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:A Full-Range Drain Current Model for Double-Gate Junctionless Transistors
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Beteiligte:
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Erschienen in:IEEE Transactions on Electron Devices ; 58, 12 ; 4219-4225
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Verlag:
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Erscheinungsdatum:2011
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Format / Umfang:7 Seiten, 15 Quellen
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 58, Ausgabe 12
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2011 INDEX| 2011
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2011 Index IEEE Transactions on Electron Devices Vol. 58| 2011
- C1
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Table of contents| 2011
- C2
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IEEE Transactions on Electron Devices publication information| 2011
- C3
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IEEE Transactions on Electron Devices information for authors| 2011