Characteristics of a planar-type Cd0.9Zn0.1Te radiation detector grown by using the low-pressure bridgman method (Englisch)

In: Journal of the Korean Physical Society   ;  64 ,  8  ;  1105-1109  ;  2014
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An indium-doped (7 ppm) Cd0.9Zn0.1Te single crystal for use in room-temperature radiation detectors has been grown using a low-pressure Bridgman (LPB) furnace at the Korea Atomic Research Institute. The single crystal has a (111) orientation and a high resistivity of ∼1 × 1012 Ω·cm. In addition, the mobility-lifetime products of the electrons and hole are 4.2 × 10−4 cm2/V and 5 × 10−5 cm2/V, respectively. These values are simply derived by using a Hecht and a neural equation and 5 MeV alpha particles emitted from an 241Am alpha source. To characterize the Cd0.9Zn0.1Te grown by using the LPB method, we fabricated planar detectors with volume of 10 × 10 × 2.5 mm3 from a 2-inch-diameter Cd0.9Zn0.1Te ingot.

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