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Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Freier ZugriffAmerican Institute of Physics | 2018| -
Two-Dimensionally Layered p‑Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions
American Chemical Society | 2018| -
Influence of High-Energy Proton Irradiation on β‑Ga2O3 Nanobelt Field-Effect Transistors
American Chemical Society | 2017| -
Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity
NationallizenzRoyal Society of Chemistry | 2016| -
Flexible graphene-based chemical sensors on paper substrates
NationallizenzRoyal Society of Chemistry | 2013| -
Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching
American Institute of Physics | 2017| -
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
American Institute of Physics | 2016| -
Effect of Downstream Plasma Exposure on Schottky Diodes Fabricated on β-Ga~2O~3
British Library Conference Proceedings | 2021| -
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
American Institute of Physics | 2022| -
Reducing proton radiation vulnerability in AlGaN/GaN high electron mobility transistors with residual strain relief
American Institute of Physics | 2023|