Seite 1 von 28.602 Ergebnissen

Sortieren nach: Relevanz | Aktualität neu zuerst | Titel A-Z

Verwendete Synonyme:

  • industrielle technik
  • ingenieurwesen
  • ingenieurwissenschaft
  • ingenieurwissenschaften
  • technik
  • technikwissenschaften
  • technique
  • technische wissenschaften

Verwendete Synonyme:

  • fur

Verwendete Synonyme:

  • angewandte optik
  • optische technik
  • technische optik

Verwendete Synonyme:

  • gesellschaft
  1.  

    Double patterning down to k1=0.15 with bilayer resist

    Noelscher, C. / Jauzion-Graverolle, F. / Heller, M. et al. | Tema Archiv | 2008
  2.  

    Double patterning overlay and CD budget for 32 nm technology node

    Iessi, U. / Loi, S. / Salerno, A. et al. | Tema Archiv | 2008
  3.  

    A rigorous finite-element domain decomposition method for electromagnetic near field simulations

    Zschiedrich, L. / Burger, S. / Schadle, A. et al. | Tema Archiv | 2008
  4.  

    Patterning strategy and performance of 1.3 NA tool for 32 nm node lithography

    Mimotogi, S. / Satake, M. / Kitamura, Y. et al. | Tema Archiv | 2008
  5.  

    The rapid introduction of immersion lithography for NAND flash: challenges and experience

    Wu, Chan-Tsun / Lin, Hung-Ming / Wu, Wei-Ming et al. | Tema Archiv | 2008
  6.  

    Double printing through the use of ion implantation

    Samarakone, N. / Yick, P. / Zawadzki, M. et al. | Tema Archiv | 2008
  7.  

    Consideration of VT5 etch-based OPC modeling

    Lim, ChinTeong / Temchenko, V. / Kaiser, D. et al. | Tema Archiv | 2008
  8.  

    Influence of shot noise on CDU with DUV, EUV, and E-beam

    Pan, Zhih-Yu / Chen, Chun-Kuang / Gau, Tsai-Sheng et al. | Tema Archiv | 2008
  9.  

    90 nm node contact hole patterning through applying model based OPC in KrF lithography

    Jeon, Young-Doo / Lee, Sang-Uk / Choi, Jaeyoung et al. | Tema Archiv | 2008
  10.  

    Optimized OPC approach for process window improvement

    Wang, Ching-Heng / Liu, Qingwei / Zhang, Liguo | Tema Archiv | 2008
  11.  

    Rigorous modeling and analysis of impact produced by microstructures in mask on wafer pattern fidelity

    Pundaleva, I. / Chalykh, R. / Lee, MyoungSoo et al. | Tema Archiv | 2008
  12.  

    Robust PPC and DFM methodology for exposure tool variations

    Kotani, T. / Nakajima, F. / Mashita, H. et al. | Tema Archiv | 2008
  13.  

    An approach for nanometer trench and hole formation

    Wang, Zhongyan / Sun, Ming / Peng, Xilin et al. | Tema Archiv | 2008
  14.  

    Random 65 nm..45 nm C/H printing using optimized illumination source and CD sizing by post processing

    Finders, J. / Heijden, E. van der / Janssen, G.J. et al. | Tema Archiv | 2008
  15.  

    Modeling the work piece charging during e-beam lithography

    Alles, B. / Cotte, E. / Simeon, B. et al. | Tema Archiv | 2008
  16.  

    32 nm 1:1 line and space patterning by resist reflow process

    Park, Joon-Min / Jeong, Heejun / An, Ilsin et al. | Tema Archiv | 2008
  17.  

    Alternative process schemes for double patterning that eliminate the intermediate etch step

    Maenhoudt, M. / Gronheid, R. / Stepanenko, N. et al. | Tema Archiv | 2008
  18.  

    Tool-to-tool optical proximity effect matching

    Look, L. Van / Bekaert, J. / Bisschop, P. de et al. | Tema Archiv | 2008

Ergebnisse anzeigen: 10 | 20 | 50

Feedback