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Two-Dimensional Electron Gas as a Basis for Low-Loss Hyperbolic Metamaterials
Freier ZugriffArXiv | 2020| -
Towards a polariton-based light emitter based on non-polar GaN quantum wells
Online Contents | 2009| -
Towards a polariton-based light emitter based on non-polar GaN quantum wells
Online Contents | 2009| -
Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
NationallizenzRoyal Society of Chemistry | 2016| -
Letters - Semiconductors - Wurtzite III-Nitride Distributed Bragg Reflectors on Si(100) Substrates
Online Contents | 2006| -
Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
American Chemical Society | 2018| -
Quasi-Two-Dimensional h‑BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor
American Chemical Society | 2017| -
Neural Network Based Prediction of Semiconductor Device Response
Freier ZugriffEuropäisches Patentamt | 2023| -
Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3
American Institute of Physics | 2019| -
(Invited) Understanding Interfaces in Homoepitaxial GaN Growth
British Library Conference Proceedings | 2018| -
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
American Institute of Physics | 2016|