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  1. > 6-W Continuous-Wave, Efficient, Low-Noise, Diode-Pumped Intracavity-Doubled Nd:YAG Laser for Pumping Ti: Sapphire Lasers

    Tsunekane, Masaki | Online Contents | 1998

  2. ${\cal P}{\cal T}$ -Symmetric Waveguides With Tunable Parameters

    Hang, Chao | Online Contents | 2016

  3. 0.15-mm n-n Gate CMOS Technology with Channel Selective Epitaxy and Transient Enhanced Diffusion Suppression

    Abiko, Hitoshi | Online Contents | 1996

  4. 0.98-mm Multiple-Quantum-well Tunneling Injection Laser with 98-GHz Intrinsic Modulation Bandwidth

    Zhang, X. | Online Contents | 1997

  5. 1 + 1 spectral problems arising from the ManakovSantini system

    Bruzón, M S | Online Contents | 2010

  6. 1 × N Multimode Interference Beam Splitter Design Techniques for On-Chip Optical Interconnections

    Hosseini, A | Online Contents | 2011

  7. 1.2 ps Kerr-lens self-mode-locked Yb:Y2SiO5 laser

    Wang, Yiran | Online Contents | 2015

  8. 1.3-mm InGaAsP-InP n-Type Modulation-Doped Strained Multiquantum-Well Lasers

    Nakahara, K. | Online Contents | 1997

  9. 1.3-mm InP-lnGaAsP Lasers Fabricated on Si Substrates by Wafer Bonding

    Wada, H. | Online Contents | 1997

  10. 1.3 mm planar buried heterostructure distributed feedback lasers grown by four-step MOVPE

    Kim, D.S. | Online Contents | 1995

  11. 1.3-mm Spot-Size-Converter Integrated Laser Diodes Fabricated by Narrow-Stripe Selective MOVPE (Invited Paper)

    Yamazaki, H. | Online Contents | 1997

  12. 1.3-mm Uncooled DFB Lasers with Low Distortion for CATV Application

    Watanabe, H. | Online Contents | 1997

  13. 1.3-[mu]m-Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Distributed-Reflector Laser Arrays on Semi-Insulating InP Substrate

    Online Contents | 2015

  14. 1.3-µm AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct Modulation (Invited Paper)

    Otsubo, K. | Online Contents | 2009

  15. 1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

    Nakao, Ryo | Online Contents | 2015

  16. 1.3-μm-Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Distributed-Reflector Laser Arrays on Semi-Insulating InP Substrate

    Matsuda, Manabu | Online Contents | 2015

  17. 1.5 to 1.6 µm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

    Gorlachuk, P V | Online Contents | 2013

  18. 1.55 (micro)m AlGaInAs-InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD

    Ma, Hong | Online Contents | 2003

  19. 1.55-(micro)m non-anti-reflection-coated fiber grating laser for single-longitudinal mode operation

    Lay, T.S. | Online Contents | 2002

  20. 1.55-mm InGaAsP-InP Laser Arrays with Integrated-Mode Expanders Fabricated Using a Single Epitaxial Growth (Invited Paper)

    Vusirikala, V. | Online Contents | 1997

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