Seite 1 von 146 Ergebnissen

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  1.  

    Devices with Semiconductor Hyperbolic Metamaterials

    MASTRO MICHAEL A | Europäisches Patentamt | 2016
  2.  

    Inverted light-emitting diode having plasmonically enhanced emission

    MASTRO MICHAEL A | Europäisches Patentamt | 2013
  3.  

    Inverted Light-Emitting Diode Having Plasmonically Enhanced Emission

    MASTRO MICHAEL A | Europäisches Patentamt | 2013
  4.  

    Inverted light emitting diode having plasmonically enhanced emission

    MASTRO MICHAEL A | Europäisches Patentamt | 2011
  5.  

    Inverted Light Emitting Diode Having Plasmonically Enhanced Emission

    MASTRO MICHAEL A | Europäisches Patentamt | 2011
  6.  

    Ultra-Thin Absorber based on Phase Change Metamaterial Superlattice

    Mastro, Michael A. / Wheeler, Virginia D. | arXiv | 2020
  7.  

    Ultra-thin absorber based on phase change metamaterial superlattice

    Mastro, Michael A. / Wheeler, Virginia D. | IEEE | 2016
  8.  

    LIGHT EMITTING DEVICE ON METAL FOAM SUBSTRATE

    MASTRO MICHAEL A / KUB FRANCIS J | Europäisches Patentamt | 2014
  9.  

    LIGHT EMITTING DEVICE ON METAL FOAM SUBSTRATE

    MASTRO MICHAEL A / KUB FRANCIS J | Europäisches Patentamt | 2013
  10.  

    Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

    Nationallizenz
    Kim, Janghyuk / Oh, Sooyeoun / Mastro, Michael A. et al. | Royal Society of Chemistry | 2016
  11.  

    Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

    Kim, Janghyuk / Oh, Sooyeoun / Mastro, Michael A et al. | Online Contents | 2016
  12.  

    Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

    Kim, Janghyuk / Mastro, Michael A. / Tadjer, Marko J. et al. | American Chemical Society | 2018
  13.  

    Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

    Kim, Janghyuk / Tadjer, Marko J. / Mastro, Michael A. et al. | Royal Society of Chemistry | 2019
  14.  

    Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

    Kim, Janghyuk / Mastro, Michael A. / Tadjer, Marko J. et al. | American Chemical Society | 2017
  15.  

    Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

    Jung, Younghun / Mastro, Michael A. / Hite, Jennifer et al. | Online Contents | 2010
  16.  

    (Invited) Understanding Interfaces in Homoepitaxial GaN Growth

    Hite, Jennifer K. / Mastro, Michael A. / Luna, Lunet E. et al. | British Library Conference Proceedings
  17.  

    All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure

    Mastro, Michael A. / Freitas, Jaime A. / Hite, Jennifer K. et al. | arXiv | 2020
  18.  

    Energy band alignment and interface states in AlGaN-4H–SiC vertical heterojunction diodes

    Johnson, Brian J. / Capano, Michael A. / Mastro, Michael A. | Online Contents | 2006
  19.  

    Energy band alignment and interface states in AlGaN/4H–SiC vertical heterojunction diodes

    Johnson, Brian J. / Capano, Michael A. / Mastro, Michael A. | Elsevier | 2006

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