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Dimensional dependence of the radiation damage in microelectromechanical system resonators
PaperIOP Institute of Physics | 2019| -
Response of a Commercial 0.25 um Thin-Film Silicon-on-Sapphire CMOS Technology to Total Ionizing Dose
Free accessArXiv | 2022| -
Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms
American Institute of Physics | 2019| -
Piezoresistivity modeling of grain‐boundary junctions in positive temperature coefficient of resistivity BaTiO3
National licenceAmerican Institute of Physics | 1995| -
Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
British Library Online Contents | 2019| -
Dopant-Type and Concentration Dependence of Total-Ionizing-Dose Response in Piezoresistive Micromachined Cantilevers
British Library Online Contents | 2019|
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