Research and Development on Next-Generation Nonvolatile Memory in ETRI (Japanese)
- New search for: Yu, B.-G.
- New search for: Yoon, S. M.
- New search for: Ryu, S. O.
- New search for: Lee, S. Y.
- New search for: Park, Y. S.
- New search for: Choi, K. J.
- New search for: Lee, N. Y.
- New search for: Yu, B.-G.
- New search for: Yoon, S. M.
- New search for: Ryu, S. O.
- New search for: Lee, S. Y.
- New search for: Park, Y. S.
- New search for: Choi, K. J.
- New search for: Lee, N. Y.
In:
Semiconductors and integrated circuits technology
69
;
43-46
;
2005
- Conference paper / Print
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Title:Research and Development on Next-Generation Nonvolatile Memory in ETRI
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Contributors:Yu, B.-G. ( author ) / Yoon, S. M. ( author ) / Ryu, S. O. ( author ) / Lee, S. Y. ( author ) / Park, Y. S. ( author ) / Choi, K. J. ( author ) / Lee, N. Y. ( author )
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Conference:69th:; SYMPOSIUM, Semiconductors and integrated circuits technology ; 2005 ; Tokyo
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Published in:Semiconductors and integrated circuits technology , 69 ; 43-46
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Publisher:
- New search for: Electrochemical Society of Japan,
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Publication date:2005-01-01
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Size:4 pages
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Remarks:In Japanese with English summaries
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Type of media:Conference paper
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Type of material:Print
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Language:Japanese
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Keywords:
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Source:
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