Application of Si-N Insulating Layer to CPP-GMR Device (English)
- New search for: Funabashi, N.
- New search for: Aoshima, K.
- New search for: Machida, K.
- New search for: Kuga, K.
- New search for: Shimidzu, N.
- New search for: Nakagawa, S.
- New search for: Funabashi, N.
- New search for: Aoshima, K.
- New search for: Machida, K.
- New search for: Kuga, K.
- New search for: Shimidzu, N.
- New search for: Nakagawa, S.
In:
Magnetics and optics research; MORIS 2009
6
;
521-524
;
2009
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ISSN:
- Conference paper / Print
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Title:Application of Si-N Insulating Layer to CPP-GMR Device
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Contributors:Funabashi, N. ( author ) / Aoshima, K. ( author ) / Machida, K. ( author ) / Kuga, K. ( author ) / Shimidzu, N. ( author ) / Nakagawa, S. ( author )
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Conference:International symposium; 12th, Magnetics and optics research; MORIS 2009 ; 2009 ; Hyogo, Japan
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Published in:Magnetics and optics research; MORIS 2009 , 6 ; 521-524JOURNAL- MAGNETICS SOCIETY OF JAPAN ; 33, 6 ; 521-524
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Publisher:
- New search for: Magnetics Society of Japan
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Publication date:2009-01-01
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Size:4 pages
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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