Positron annihilation study of HVPE grown thick GaN layers (English)
- New search for: Misheva, M.
- New search for: Larsson, H.
- New search for: Gogova, D.
- New search for: Monemar, B.
- New search for: Misheva, M.
- New search for: Larsson, H.
- New search for: Gogova, D.
- New search for: Monemar, B.
In:
PHYSICA STATUS SOLIDI A APPLIED RESEARCH
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202
, 5
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713-717
;
2005
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ISSN:
- Article (Journal) / Print
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Title:Positron annihilation study of HVPE grown thick GaN layers
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Contributors:
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Published in:PHYSICA STATUS SOLIDI A APPLIED RESEARCH ; 202, 5 ; 713-717
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Publisher:
- New search for: ACADEMIC VERLAG GMBH
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Publication date:2005-01-01
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Size:5 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 530
- Further information on Dewey Decimal Classification
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Classification:
DDC: 530 -
Source:
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Table of contents – Volume 202, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 713
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Positron annihilation study of HVPE grown thick GaN layersMisheva, M. / Larsson, H. / Gogova, D. / Monemar, B. et al. | 2005
- 718
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A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etchingMoon, Y. T. / Fu, Y. / Yun, F. / Dogan, S. / Mikkelson, M. / Johnstone, D. / Morkoc, H. et al. | 2005
- 722
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Dislocation density reduction in GaN using porous SiN interlayersSagar, A. / Feenstra, R. M. / Inoki, C. K. / Kuan, T. S. / Fu, Y. / Moon, Y. T. / Yun, F. / Morkoc, H. et al. | 2005
- 727
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MOVPE homoepitaxial growth on vicinal GaN(0001) substratesXu, X. / Vaudo, R. P. / Flynn, J. / Dion, J. / Brandes, G. R. et al. | 2005
- 732
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White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxyBarabash, R. I. / Ice, G. E. / Liu, W. / Einfeldt, S. / Hommel, D. / Roskowski, A. M. / Davis, R. F. et al. | 2005
- 739
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Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structureKakanakova-Georgieva, A. / Ivanov, I. G. / Hallin, C. / Janzen, E. et al. | 2005
- 744
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Uniform III-nitride growth in single wafer horizontal MOVPE reactorsHardtdegen, H. / Kaluza, N. / Steins, R. / Javorka, P. / Wirtz, K. / Alam, A. / Schmitt, T. / Beccard, R. et al. | 2005
- 749
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Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templatesYun, F. / Fu, Y. / Moon, Y. T. / Ozgur, U. / Xie, J. Q. / Dogan, S. / Morkoc, H. / Inoki, C. K. / Kuan, T. S. / Zhou, L. et al. | 2005
- 754
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Epitaxial growth of Fe on GaN(0001): structural and magnetic propertiesCalarco, R. / Meijers, R. / Kaluza, N. / Guzenko, V. A. / Thillosen, N. / Schapers, T. / Luth, H. / Fonin, M. / Krzyk, S. / Ghadimi, R. et al. | 2005
- 758
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Improvement of crystalline quality of GaPN layers grown by RF-plasma MBE with ion collectorUtsumi, A. / Furukawa, Y. / Yonezu, H. / Yoshizumi, Y. / Morita, Y. / Wakahara, A. et al. | 2005
- 763
-
Resonant Raman spectroscopy on InNKuball, M. / Pomeroy, J. W. / Wintrebert-Fouquet, M. / Butcher, K. S. A. / Lu, H. / Schaff, W. J. / Shubina, T. V. / Ivanov, S. V. / Vasson, A. / Leymarie, J. et al. | 2005
- 768
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Temperature dependence of carrier lifetimes in InNChen, F. / Cartwright, A. N. / Lu, H. / Schaff, W. J. et al. | 2005
- 773
-
Polarity determination of InN by wet etchingMuto, D. / Araki, T. / Naoi, H. / Matsuda, F. / Nanishi, Y. et al. | 2005
- 777
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Interfacial structure of MBE grown InN on GaNKehagias, T. / Iliopoulos, E. / Delimitis, A. / Nouet, G. / Dimakis, E. / Georgakilas, A. / Komninou, P. et al. | 2005
- 781
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Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPERuterana, P. / Morales, M. / Gourbilleau, F. / Singh, P. / Drago, M. / Schmidtling, T. / Pohl, U. W. / Richter, W. et al. | 2005
- 785
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Piezoresponse force microscopy for imaging of GaN surfacesCalarco, R. / Meijers, R. / Stoica, T. / Luth, H. et al. | 2005
- 790
-
Time-resolved reflectivity studies of coherent longitudinal acoustic phonon pulses in bulk III-nitride semiconductorsWraback, M. / Shen, H. / Sampath, A. V. / Collins, C. J. / Garrett, G. A. / Sarney, W. L. et al. | 2005
- 795
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Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVDLu, D. / Florescu, D. I. / Lee, D. S. / Ramer, J. C. / Parekh, A. / Merai, V. / Li, S. / Gardner, J. J. / Begarney, M. J. / Armour, E. A. et al. | 2005
- 799
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Atomic simulations and HRTEM observations of a Sigma 18 tilt grain boundary in GaNKioseoglou, J. / Bere, A. / Komninou, P. / Dimitrakopulos, G. P. / Nouet, G. / Iliopoulos, E. / Serra, A. / Karakostas, T. et al. | 2005
- 804
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Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 x 1 surfacesOrani, D. / Piccin, M. / Rubini, S. / Pelucchi, E. / Bonanni, B. / Franciosi, A. / Passaseo, A. / Cingolani, R. / Khan, A. et al. | 2005
- 808
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Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channelsArdaravicius, L. / Ramonas, M. / Kiprijanovic, O. / Liberis, J. / Matulionis, A. / Eastman, L. F. / Shealy, J. R. / Chen, X. / Sun, Y. J. et al. | 2005
- 812
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Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEGWells, A. / Uren, M. J. / Balmer, R. S. / Nash, K. J. / Martin, T. / Missous, M. et al. | 2005
- 816
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Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structuresVitusevich, S. A. / Petrychuk, M. V. / Danylyuk, S. V. / Kurakin, A. M. / Klein, N. / Belyaev, A. E. et al. | 2005
- 820
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Carrier diffusion and recombination in highly excited InGaN/GaN heterostructuresJarasiunas, K. / Aleksiejunas, R. / Malinauskas, T. / Sudzius, M. / Miasojedovas, S. / Jursenas, S. / Zukauskas, A. / Gaska, R. / Zhang, J. / Shur, M. S. et al. | 2005
- 824
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High spatial resolution micro-Raman temperature measurements of nitride devices (FETs and light emitters) (invited)Kuball, M. / Pomeroy, J. W. / Rajasingam, S. / Sarua, A. / Uren, M. J. / Martin, T. / Lell, A. / Harle, V. et al. | 2005
- 832
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High-current AllnN/GaN field effect transistorsDadgar, A. / Neuburger, M. / Schulze, F. / Blasing, J. / Krtschil, A. / Daumiller, I. / Kunze, M. / Gunther, K.-M. / Witte, H. / Diez, A. et al. | 2005
- 837
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Demonstration of a GaN-spacer high electron mobility transistor with low alloy scatteringPalacios, T. / Shen, L. / Keller, S. / Chakraborty, A. / Heikman, S. / Buttari, D. / DenBaars, S. P. / Mishra, U. K. et al. | 2005
- 841
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Post-annealing effects on trapping behaviors in AlGaN/GaN HEMTsKim, H. / Lee, J. / Lu, W. et al. | 2005
- 846
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Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaNGarrett, G. A. / Shen, H. / Wraback, M. / Imer, B. / Haskell, B. / Speck, J. S. / Keller, S. / Nakamura, S. / DenBaars, S. P. et al. | 2005
- 850
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Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxyIbanez, J. / Pastor, D. / Cusco, R. / Artus, L. / Avella, M. / Jimenez, J. / Novikov, S. V. / Foxon, C. T. et al. | 2005
- 854
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Optical properties of lattice matched In~xGa~1~-~xP~1~-~yN~y heteroepitaxial layers on GaPImanishi, T. / Wakahara, A. / Kim, S. M. / Yonezu, H. / Furukawa, Y. et al. | 2005
- 859
-
Improvement of photoluminescence by Si delta-doping in GaN barrier layer of GaN/In~xGa~1~-~xN multi-quantum wellsKwon, M.-K. / Park, I.-K. / Beak, S.-H. / Kim, J.-Y. / Park, S.-J. et al. | 2005
- 863
-
Enhancement effect of Tb-related luminescence in Al~xGa~1~-~xN with the AlN molar fraction 0Wakahara, A. / Nakanishi, Y. / Fujiwara, T. / Yoshida, A. / Ohshima, T. / Kamiya, T. et al. | 2005
- 868
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InGaN multiple quantum well lasers grown by MBE (invited)Heffernan, J. / Kauer, M. / Johnson, K. / Zellweger, C. / Hooper, S. E. / Bousquet, V. et al. | 2005
- 877
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The effect of charge on kink migration at 90^o partial dislocations in SiC (invited)Blumenau, A. T. / Eberlein, T. A. G. / Jones, R. / Oberg, S. / Frauenheim, T. / Briddon, P. R. et al. | 2005
- 883
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Structural and electronic properties of thin fluorite-structure NiSi~2, CoSi~2 and FeSi~2 interfaces and precipitates in SiWardle, M. G. / Goss, J. P. / Briddon, P. R. / Jones, R. et al. | 2005
- 889
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Defect states in Czochalski p-type silicon: the role of oxygen and dislocations (invited)Castaldini, A. / Cavalcoli, D. / Cavallini, A. / Pizzini, S. et al. | 2005
- 896
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Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation densityFeklisova, O. V. / Pichaud, B. / Yakimov, E. B. et al. | 2005
- 901
-
Silicon light-emitting diodes based on dislocation-related luminescenceKveder, V. / Badylevich, M. / Schroter, W. / Seibt, M. / Steinman, E. / Izotov, A. et al. | 2005
- 911
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Structural and electrical properties of metal impurities at dislocations in silicon (invited)Seibt, M. / Kveder, V. / Schroter, W. / Voss, O. et al. | 2005
- 921
-
Decay of oxygen solid solution in plastically deformed siliconYarykin, N. / Vdovin, V. I. et al. | 2005
- 926
-
Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experimentsMurphy, J. D. / Giannattasio, A. / Senkader, S. / Falster, R. J. / Wilshaw, P. R. et al. | 2005
- 931
-
Defects in germanium-doped Czochralski silicon (invited)Yang, D. et al. | 2005
- 939
-
Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductorsVanderschaeve, G. / Caillard, D. et al. | 2005
- 944
-
On the nucleation of shuffle dislocations in SiRabier, J. / Demenet, J. L. et al. | 2005
- R47
-
Imprinting magnetic memory cells in molecular based NiL~2(C~2H~5OH)~2 heterospin crystalsMorgunov, R. / Gudoshnikov, S. / Ossypian, J. / Ovcharenko, V. / Sagdeev, R. / Skomarovskii, V. / Tanimoto, Y. et al. | 2005
- R50
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Organic photodiodes on newspaperLamprecht, B. / Thunauer, R. / Ostermann, M. / Jakopic, G. / Leising, G. et al. | 2005
- R53
-
Multiplet luminescence of sulfur implanted silica - SiO~2:SSalh, R. / Schmidt, B. / Fitting, H.-J. et al. | 2005