Static and dynamic photoinduced magnetic effects in yttrium-iron garnet lightly doped with barium ions (English)
- New search for: Vorob’eva, N. V.
- New search for: Khalilov, R. Z.
- New search for: Vorob’eva, N. V.
- New search for: Khalilov, R. Z.
In:
SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV
;
46
, 4
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452-455
;
2012
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ISSN:
- Article (Journal) / Print
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Title:Static and dynamic photoinduced magnetic effects in yttrium-iron garnet lightly doped with barium ions
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Contributors:Vorob’eva, N. V. ( author ) / Khalilov, R. Z. ( author )
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Published in:SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV ; 46, 4 ; 452-455
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Publisher:
- New search for: Springer Science + Business Media
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Publication date:2012-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 537.622
- Further information on Dewey Decimal Classification
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Classification:
DDC: 537.622 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 46, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 415
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Determination of the degree of ordering of materials’ structure by calculating the information-correlation characteristicsVikhrov, S. P. / Avacheva, T. G. / Bodyagin, N. V. / Grishankina, N. V. / Avachev, A. P. et al. | 2012
- 422
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Phase transition and correlation effects in vanadium dioxideIlinskiy, A. V. / Kvashenkina, O. E. / Shadrin, E. B. et al. | 2012
- 430
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Effect of γ-ray radiation on electrical properties of heat-treated Tb x Sn1 − x Se single crystalsHuseynov, J. I. / Jafarov, T. A. et al. | 2012
- 433
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Electronic properties and deep traps in electron-irradiated n-GaNBrudnyi, V. N. / Verevkin, S. S. / Govorkov, A. V. / Ermakov, V. S. / Kolin, N. G. / Korulin, A. V. / Polyakov, A. Ya. / Smirnov, N. B. et al. | 2012
- 440
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Comparison of electronic structure of as grown and solar grade silicon samplesSaravanan, R. / Sheeba, R. A. J. R. et al. | 2012
- 447
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Effect of copper doping on kinetic coefficients and their anisotropy in PbSb2Te4Nemov, S. A. / Blagih, N. M. / Dema, N. S. / Zhitinskaya, M. K. / Proshin, V. I. / Svechnikova, T. E. / Shelimova, L. E. et al. | 2012
- 452
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Static and dynamic photoinduced magnetic effects in yttrium-iron garnet lightly doped with barium ionsVorob’eva, N. V. / Khalilov, R. Z. et al. | 2012
- 456
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Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-typeEmtsev, V. V. / Ivanov, A. M. / Kozlovski, V. V. / Lebedev, A. A. / Oganesyan, G. A. / Strokan, N. B. / Wagner, G. et al. | 2012
- 466
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Absorptivity of semiconductors used in the production of solar cell panelsKosyachenko, L. A. / Grushko, E. V. / Mikityuk, T. I. et al. | 2012
- 471
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Charge transport at the interface of n-GaAs (100) with an aqueous HCl solution: Electrochemical impedance spectroscopy studyLebedev, M. V. / Masuda, T. / Uosaki, K. et al. | 2012
- 478
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Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structureLeonov, A. V. / Mokrushin, A. D. / Omeljanovskaja, N. M. et al. | 2012
- 484
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Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinsertsPonomarev, D. S. / Vasil’evskii, I. S. / Galiev, G. B. / Klimov, E. A. / Khabibullin, R. A. / Kulbachinskii, V. A. / Uzeeva, N. A. et al. | 2012
- 491
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Structural control over conductivity and conduction type in thin films of polyphenylquinonesSvetlichnyi, V. M. / Aleksandrova, E. L. / Tameev, A. R. / Miagkova, L. A. / Matyushina, N. V. et al. | 2012
- 496
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Carbazole-containing polyphenylquinolines as a basis for optoelectronic materials with white luminescenceSvetlichnyi, V. M. / Aleksandrova, E. L. / Nekrasova, T. N. / Smyslov, R. Yu. / Miagkova, L. A. / Matyushina, N. V. et al. | 2012
- 504
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Photoinduced etching of thin films of chalcogenide glassy semiconductorsDan’ko, V. A. / Indutnyi, I. Z. / Min’ko, V. I. / Shepelyavyi, P. E. / Bereznyova, O. V. / Lytvyn, O. S. et al. | 2012
- 509
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Effect of avalanche-type barrier discharge on a silver halide photographic material in the case of blocked ionic conductivityBoychenko, A. P. et al. | 2012
- 514
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Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layersTsai, Jung-Hui / Ye, Sheng-Shiun / Guo, Der-Feng / Lour, Wen-Shiung et al. | 2012
- 519
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Operation of a semiconductor opening switch at ultrahigh current densitiesLyubutin, S. K. / Rukin, S. N. / Slovikovsky, B. G. / Tsyranov, S. N. et al. | 2012
- 528
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Subnanosecond 4H-SiC diode current breakersIvanov, P. A. / Grekhov, I. V. et al. | 2012
- 532
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Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p +-p-n + diodes: Effect of impurity breakdown in the p-type baseIvanov, P. A. / Potapov, A. S. / Samsonova, T. P. et al. | 2012
- 535
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Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetectorSorochkin, A. V. / Varavin, V. S. / Predein, A. V. / Sabinina, I. V. / Yakushev, M. V. et al. | 2012
- 541
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Effect of microwave irradiation on the resistance of Au-TiB x -Ge-Au-n-n +-n ++-GaAs(InP) ohmic contactsBelyaev, A. E. / Sachenko, A. V. / Boltovets, N. S. / Ivanov, V. N. / Konakova, R. V. / Kudryk, Ya. Ya. / Matveeva, L. A. / Milenin, V. V. / Novitskii, S. V. / Sheremet, V. N. et al. | 2012
- 545
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Effect of post oxidation annealing on electrical characteristics of Ni/SiO2/4H-SiC capacitor with varying oxide thicknessGupta, Sanjeev K. / Azam, A. / Akhtar, J. et al. | 2012
- 552
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Formation of anodic layers on InAs (111)III. Study of the chemical compositionValisheva, N. A. / Tereshchenko, O. E. / Prosvirin, I. P. / Kalinkin, A. V. / Goljashov, V. A. / Levtzova, T. A. / Bukhtiyarov, V. I. et al. | 2012