Current Status and Future Prospects of Ammonothermal Bulk GaN Growth (S & M 0910) (English)
- New search for: Hashimoto, T.
- New search for: Letts, E.
- New search for: Hoff, S.
- New search for: Hashimoto, T.
- New search for: Letts, E.
- New search for: Hoff, S.
- New search for: Doi, T.
In:
Special Issue on Fabrication Process and Application of Crystal Substrates to Realize Next-Generation Green Devices
3
;
155-164
;
2013
-
ISSN:
- Article (Journal) / Print
-
Title:Current Status and Future Prospects of Ammonothermal Bulk GaN Growth (S & M 0910)
-
Contributors:
-
Published in:Special Issue on Fabrication Process and Application of Crystal Substrates to Realize Next-Generation Green Devices , 3 ; 155-164SENSORS AND MATERIALS ; 25, 3 ; 155-164
-
Publisher:
- New search for: SCIENTIFIC PUBLISHING DIVISION MYU
-
Publication date:2013-01-01
-
Size:10 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 530
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 530 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 25, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 141
-
Current Status and Future Prospects of GaN Substrates for Green Devices (S & M 0909)Doi, T. et al. | 2013
- 155
-
Current Status and Future Prospects of Ammonothermal Bulk GaN Growth (S & M 0910)Hashimoto, T. / Letts, E. / Hoff, S. et al. | 2013
- 165
-
Growth and Evaluation of Bulk GaN Crystals Grown on a Point Seed Crystal by Ba-Added Na Flux Method (S & M 0911)Imabayashi, H. / Murakami, K. / Matsuo, D. / Todoroki, Y. / Takazawa, H. / Kitamoto, A. / Maruyama, M. / Imade, M. / Yoshimura, M. / Mori, Y. et al. | 2013
- 177
-
Assessment of Stacking Faults in Silicon Carbide Crystals (S & M 0912)Yamamoto, H. et al. | 2013
- 189
-
Surface Treatment for GaN Substrate -Comparison of Chemical Mechanical Polishing and Inductively Coupled Plasma Dry Etching- (S & M 0913)Aida, H. / Takeda, H. / Aota, N. / Kim, S.-W. / Koyama, K. et al. | 2013
- 205
-
Growth of Al~xGa~1~-~xN Structures on 8 in. Si(111) Substrates (S & M 0914)Krishnan, B. / Lee, S. / Li, H. / Su, J. / Lee, D. / Paranjpe, A. et al. | 2013
- 219
-
Evaluation of GaN Substrate for Vertical GaN Power Device Applications (S & M 0915)Kachi, T. / Uesugi, T. et al. | 2013