Simulation of Mass Sensor Based on Luminescence of Micro/Nano Electromechanical Resonator (English)
- New search for: Li, L.
- New search for: Li, L.
In:
IEEE ELECTRON DEVICE LETTERS
;
38
, 3
;
395-398
;
2017
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ISSN:
- Article (Journal) / Print
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Title:Simulation of Mass Sensor Based on Luminescence of Micro/Nano Electromechanical Resonator
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Contributors:Li, L. ( author )
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Published in:IEEE ELECTRON DEVICE LETTERS ; 38, 3 ; 395-398
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2017-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3815
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3815 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 38, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 297
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Editorial Year-in-ReviewLiu, Tsu-Jae King et al. | 2017
- 298
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Changes to the Editorial BoardKing Liu, Tsu-Jae / Gunnar Malm, Bengt et al. | 2017
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Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde ProfileChou, Chuan-Pu / Chen, Chin-Yu / Chen, Kuen-Yi / Teng, Shih-Chieh / Huang, Jia-Hong / Wu, Yung-Hsien et al. | 2017
- 303
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High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 TreatmentAndo, Takashi / Hashemi, Pouya / Bruley, John / Rozen, John / Ogawa, Yohei / Koswatta, Siyuranga / Chan, Kevin K. / Cartier, Eduard A. / Mo, Renee / Narayanan, Vijay et al. | 2017
- 306
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Confinement Effects on Radiation Response of SOI FinFETs at the Scaling LimitEsqueda, Ivan S. et al. | 2017
- 310
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InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma TreatmentChang, Po-Chun / Luc, Quang-Ho / Lin, Yueh-Chin / Lin, Yen-Ku / Wu, Chia-Hsun / Sze, Simon M. / Chang, Edward Yi et al. | 2017
- 314
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A New Direction for III–V FETs for Mobile CPU Operation Including Burst-Mode: In0.35Ga0.65As ChannelRakshit, T. / Obradovic, B. / Wang, W.-E. / Kim, W.-H. / Shin, K.-M. / Baek, S.-C. / Lee, S.-W. / Kim, S.-H. / Lee, J.-M. / Kim, D. et al. | 2017
- 318
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A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CETVais, Abhitosh / Franco, Jacopo / Martens, Koen / Lin, Dennis / Sioncke, Sonja / Putcha, Vamsi / Nyns, Laura / Maes, Jan / Xie, Qi / Givens, Michael et al. | 2017
- 322
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Chitosan-Based Electrolyte Gated Low Voltage Oxide Transistor With a Coplanar Modulatory TerminalZhu, Li Qiang / Chao, Jin Yu / Xiao, Hui / Liu, Rui / Wan, Qing et al. | 2017
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Characteristics of Resistive Memory Read Fluctuations in Endurance CyclingNminibapiel, David M. / Veksler, Dmitry / Shrestha, Pragya R. / Kim, Ji-Hong / Campbell, Jason P. / Ryan, Jason T. / Baumgart, Helmut / Cheung, Kin P. et al. | 2017
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HfO2-Based Highly Stable Radiation-Immune Ferroelectric MemoryHuang, Fei / Wang, Yan / Liang, Xiao / Qin, Jun / Zhang, Yan / Yuan, Xiufang / Wang, Zhuo / Peng, Bo / Deng, Longjiang / Liu, Qi et al. | 2017
- 334
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Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO TransistorsChen, Guan-Fu / Chang, Ting-Chang / Chen, Hua-Mao / Chen, Bo-Wei / Chen, Hong-Chih / Li, Cheng-Ya / Tai, Ya-Hsiang / Hung, Yu-Ju / Chang, Kuo-Jui / Cheng, Kai-Chung et al. | 2017
- 338
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Flexible-Blade Coating of Small Molecule Organic Semiconductor for Low Voltage Organic Field Effect TransistorDing, Li / Zhao, Jiaqing / Huang, Yukun / Tang, Wei / Chen, Sujie / Guo, Xiaojun et al. | 2017
- 341
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Impact of Ti Content on Structural and Electrical Characteristics of High- $\kappa$ Yb2TiO5 $\alpha$ -InZnSnO Thin-Film TransistorsPan, Tung-Ming / Peng, Bo-Jung / Wang, Hung-Chun / Her, Jim-Long / Lou, Bih-Show et al. | 2017
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Improvement in the Negative Bias Illumination Stress Stability for Silicon-Ion Implanted Amorphous InGaZnO Thin-Film TransistorsGoto, Tetsuya / Imaizumi, Fuminobu / Sugawa, Shigetoshi et al. | 2017
- 349
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Enhanced Carrier Collection in Silver Nanoparticle Embedded Zinc Oxide Nanorod Top Electrodes for Thin-Film Photovoltaic DevicesHuang, Xuan / Chen, Wenzhi / Feng, Jia / Xu, Qiang / Chen, Wei / Cui, Xin / Tseng, Bea-Heng / Yun, Daqin / Cheng, Qijin / Chen, Chao et al. | 2017
- 353
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In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substratesGupta, Chirag / Lund, Cory / Chan, Silvia H. / Agarwal, Anchal / Liu, Junquian / Enatsu, Yuuki / Keller, Stacia / Mishra, Umesh K. et al. | 2017
- 356
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A 3D Assembled Silicon-Embedded Transformer for 10-MHz, Ultra-High-Isolation, Compact Chip-to-Chip Power TransferWu, Rongxiang / Liao, Niteng / Fang, Xiangming / Cai, Jian / Wang, Qian / Sin, Johnny K. O. et al. | 2017
- 359
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N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHzWienecke, Steven / Romanczyk, Brian / Guidry, Matthew / Li, Haoran / Ahmadi, Elaheh / Hestroffer, Karine / Zheng, Xun / Keller, Stacia / Mishra, Umesh K. et al. | 2017
- 363
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Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown VoltageKitabayashi, Yuya / Kudo, Takuya / Tsuboi, Hidetoshi / Yamada, Tetsuya / Xu, Dechen / Shibata, Masanobu / Matsumura, Daisuke / Hayashi, Yuya / Syamsul, Mohd / Inaba, Masafumi et al. | 2017
- 367
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High Performance Tri-Gate GaN Power MOSHEMTs on Silicon SubstrateMa, Jun / Matioli, Elison et al. | 2017
- 371
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Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB TestsHu, Jie / Stoffels, Steve / Zhao, Ming / Tallarico, Andrea Natale / Rossetto, Isabella / Meneghini, Matteo / Kang, Xuanwu / Bakeroot, Benoit / Marcon, Denis / Kaczer, Ben et al. | 2017
- 375
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Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO2 Thin Films for MIM CapacitorsChaker, Ahmad / Bermond, Cedric / Artillan, Philippe / Gonon, Patrice / Vallee, Christophe / Bsiesy, Ahmad et al. | 2017
- 379
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Quantitative Analysis of La and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate StackSuarez-Segovia, C. / Leroux, C. / Domengie, F. / Ghibaudo, G. et al. | 2017
- 383
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Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 KDas, Subhashis / Bag, Ankush / Kumar, Rahul / Biswas, Dhrubes et al. | 2017
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Wideband RF Filters Using Medium-Scale Integration of Lithium Niobate Laterally Vibrating ResonatorsSong, Yong-Ha / Gong, Songbin et al. | 2017
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Touch Sensor Array With Integrated Drivers and Comparator Using a-IGZO TFTsGeng, Di / Chen, Yuan Feng / Mativenga, M. / Jang, Jin et al. | 2017
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Simulation of Mass Sensor Based on Luminescence of Micro/Nano Electromechanical ResonatorLi, Lijie et al. | 2017
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Design and Fabrication of a Stretchable Circuit Board for Wireless Posture MeasurementLin, Shujing / Xu, Junkai / Zhi, Xiao / Chen, Di / Miao, Jianmin / Shull, Peter Bradley / Cui, Daxiang et al. | 2017
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Reduced Miller Capacitance in U-Shaped Channel Tunneling FET by Introducing Heterogeneous Gate DielectricLi, Wei / Liu, Hongxia / Wang, Shulong / Chen, Shupeng et al. | 2017
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Corrections to “Attomolar Sensitivity of FET Biosensor Based on Smooth and Reliable Graphene Nanogrids”Basu, J. / RoyChaudhuri, C. et al. | 2017
- 408
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EDS Meetings Calendar| 2017
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IEEE Electron Device Letters information for authors| 2017
- 411
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Silicon Nanoelectronics Workshop| 2017
- 412
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2017 IEEE Compound Semiconductor Symposium| 2017
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Table of contents| 2017
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IEEE Electron Device Letters| 2017
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Blank page| 2017