Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France, [symposium J1 held at the 203rd meeting of the Electrochemical Society] and the 202nd meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah, [symposium M1] (English)
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2003
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ISBN:
- Conference Proceedings / Print
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Title:Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France, [symposium J1 held at the 203rd meeting of the Electrochemical Society] and the 202nd meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah, [symposium M1]
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Contributors:
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Conference:ALTECH 2003 ; 4 ; 2003 ; Paris
Meeting of the Electrochemical Society (ECS) <symposium J1> ; 203 ; 2003 ; Paris
Meeting of the Electrochemical Society (ECS) <symposium M1> ; 202 ; 2002 ; Salt Lake City, Utah -
Published in:SPIE ; 5133
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington, NJ , Bellingham, Wash.
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Publication date:2003
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Size:XII, 555 S
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ISBN:
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Type of media:Conference Proceedings
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 5
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Copper Behavior in Bulk Silicon and Associated Characterization TechniquesHeiser, T. / Belayachi, A. / Schunck, J.-P. / Electrochemical Society et al. | 2003
- 21
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Quantification Issues of Trace Metal Contaminants on Silicon Wafers by Means of TOF-SIMS and ICP-MSRostam-Khani, P. / Vullings, P. / Noij, G. / Claassen, W. / Electrochemical Society et al. | 2003
- 31
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Determination of the Aluminum-Induced Oxide Charge by AC Surface Photovoltage Measurements in N-Type SiliconShimizu, H. / Ikeda, M. / Shin, R. / Electrochemical Society et al. | 2003
- 37
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Characterization of Heavy Metal Contamination by Capacitance-Frequency MethodHara, K. / Takahashi, M. / Yoshida, H. / Kishino, S. / Electrochemical Society et al. | 2003
- 42
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In-line Copper Contamination Monitoring Using Non-Contact Q-V-SPV TechniquesBohringer, M. / Hauber, J. / Passefort, S. / Eason, K. / Electrochemical Society et al. | 2003
- 50
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Recent Developments in Nuclear Methods in Support of Semiconductor CharacterizationBrijs, B. / Bender, H. / Huyghebaert, C. / Janssens, T. / Vandervorst, W. / Nakajima, K. / Kimura, K. / Bergmaier, A. / Dollinger, G. / van den Berg, J. A. et al. | 2003
- 63
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Determination of Oxygen in Semiconductor Silicon by Gas Fusion Analysis GFA - Historical and Future TrendsPahlke, S. / Electrochemical Society et al. | 2003
- 75
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High Sensitivity Measurement of Nitrogen in Czochralski SiliconPorrini, M. / Pretto, M. G. / Scala, R. / Voronkov, V. V. / Electrochemical Society et al. | 2003
- 83
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Spark Source Mass Spectrometric Analysis of Low Carbon Contents in Crystalline SiliconWiedemann, B. / Meyer, J. D. / Alt, H. C. / Riemann, H. / Electrochemical Society et al. | 2003
- 88
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Hydrogen Contamination and Defect Generation in p-type Silicon and Silicon-Germanium Schottky Barrier Test StructuresVolpi, F. / Peaker, A. R. / Berbezier, I. / Ronda, A. / Electrochemical Society et al. | 2003
- 96
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Analysis of Oxygen Thermal Donor Formation in n-type Cz-SiliconRafi, J. M. / Simoen, E. / Claeys, C. / Ulyashin, A. / Job, R. / Fahrner, W. / Versluys, J. / Clauws, P. / Lozano, M. / Campabadal, F. et al. | 2003
- 106
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The Application of Synchrotron Radiation to Semiconductor Materials CharacterizationBarrett, R. / Electrochemical Society et al. | 2003
- 120
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Ultra-trace Analysis of Light Elements and Speciation of Minute Organic Contaminants on Silicon Wafer Surfaces by means of TXRF in Combination with NEXAFSBeckhoff, B. / Fliegauf, R. / Ulm, G. / Weser, J. / Pepponi, G. / Streli, C. / Wobrauschek, P. / Ehmann, T. / Fabry, L. / Mantler, C. et al. | 2003
- 129
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TXRF Characterization of Inhomogneous Solids: Influence of Surface MorphologyAlov, N. / Oskolok, K. / Wittershagen, A. / Kolbesen, B. O. / Electrochemical Society et al. | 2003
- 136
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Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor ManufacturingSaga, K. / Hattori, T. / Electrochemical Society et al. | 2003
- 150
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Characterization of Advanced Semiconductor Materials by Thermal Desorption Mass Spectrometry with Atmospheric, Pressure IonizationCarbonell, L. / Vereecke, G. / Van Elshocht, S. / Caymax, M. / Van Hove, M. / Maex, K. / Mertens, P. / Electrochemical Society et al. | 2003
- 160
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Analysis of Trace VOCs` in Clean Room Air with PDMS/Carboxen SPME FibersTuduri, L. / Teetaert, V. / Desauziers, V. / Coffre, E. / Dupont, P. / Camenzind, M. / Electrochemical Society et al. | 2003
- 170
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Cleaning Chemistry with Complexing Agents (CAs): Direct Concentration Measurement of CAs with HPLCMetzger, S. / Kolbesen, B. O. / Electrochemical Society et al. | 2003
- 177
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Complexing Agents (CAs) for Semiconductor Cleaning Chemistries: Characterization of CA Lifetimes by UV/VIS-SpectroscopyDoll, O. / Kolbesen, B. O. / Electrochemical Society et al. | 2003
- 189
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Stress Management in IC Manufacturing: mu-Raman Spectroscopy RevisitedKwakman, L. F. T. / Delille, D. / Mermoux, M. / Crisci, A. / Lucazeau, G. / Electrochemical Society et al. | 2003
- 207
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Characterization and Metrology of Novel Materials Involved in Advanced CMOS ProcessesWyon, C. / Electrochemical Society et al. | 2003
- 223
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Physical Characterization of Thin HfO~2 Layers by the Combined Analysis with Complementary TechniquesBender, H. / Conard, T. / Richard, O. / Brijs, B. / Petry, J. / Vandervorst, W. / Defranoux, C. / Boher, P. / Rochat, N. / Wyon, C. et al. | 2003
- 233
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Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO~2 Thin FilmsBlin, D. / Rochat, N. / Rolland, G. / Holliger, P. / Martin, F. / Damlencourt, J.-F. / Lardin, T. / Besson, P. / Haukka, S. / Semeria, M.-N. et al. | 2003
- 243
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Application of X-Ray Fluorescence Spectrometry in Characterization of High-k Ultra-Thin FilmsZhao, C. / Brijs, B. / Dortu, F. / DeGendt, S. / Caymax, M. / Heyns, M. / Besling, W. / Maes, J. W. / Electrochemical Society et al. | 2003
- 252
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Characterization of Nano-Laminate Structure Using Grazing Incidence XRD and ATR-FTIRZhao, C. / DeGendt, S. / Caymax, M. / Heyns, M. / Consier, V. / Maes, J. W. / Roebben, G. / Van Der Biest, O. / Electrochemical Society et al. | 2003
- 260
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High-Resolution Analysis of the HfO~2-SiO~2 Interface by Soft X-Ray Photoelectron SpectroscopyRenault, O. / Samour, D. / Damlencourt, J.-F. / Papon, A.-M. / Martin, F. / Marthon, S. / Blin, D. / Barrett, N. T. / Electrochemical Society et al. | 2003
- 267
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Ag Electrodeposition on n-InP Followed in Situ by PhotoluminescenceGerard, I. / Mathieu, C. / Tran-Van, P. / Etcheberry, A. / Electrochemical Society et al. | 2003
- 276
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Characterization by Electrochemistry and Chemical Surface Analysis of an Oxide Film on n-InPQuach, N. C. / Gerard, I. / Simon, N. / Etcheberry, A. / Electrochemical Society et al. | 2003
- 285
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Charging Effects on Ferroelectric SBT Thin Films Imaged by Non-Contact Electrostatic Force MicroscopyJunghans, N. / Kolbesen, B. O. / Electrochemical Society et al. | 2003
- 293
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Two Dimensional Carrier Profiling Using Scanning Capacitance MicroscopyDuhayon, N. / Clarysse, T. / Alvarez, D. / Eyben, P. / Fouchier, M. / Vandervorst, W. / Hellemans, L. / Electrochemical Society et al. | 2003
- 305
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Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO~2, Al~2O~3 and HfAIO~x Thin Layers for High k DielectricsBoher, P. / Defranoux, C. / Bourtauld, S. / Piel, J. P. / Bender, H. / Electrochemical Society et al. | 2003
- 316
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Optical Characterisation of High-? Materials Deposited by ALCVDBellandi, E. / Crivelli, B. / Elbaz, A. / Alessandri, M. / Boher, P. / Defranoux, C. / Electrochemical Society et al. | 2003
- 322
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Macroscopic and Microscopic Photoluminescence Mapping System Applicable to 300 mm WafersLi, Z. / Tajima, M. / Shimidzu, R. / Electrochemical Society et al. | 2003
- 329
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In-Line and Non-Destructive Analysis of Epitaxial Si~1~-~x~-~yGe~xC~y by Spectroscopic Ellipsometry and Comparison with Other Established TechniquesLoo, R. / Meunier-Beillard, P. / Delhougne, R. / Koumoto, T. / Geenen, L. / Brijs, B. / Vandervorst, W. / Electrochemical Society et al. | 2003
- 339
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Study by Spectroellipsometry of the InP Surface Evolution by Cerium Acidic SolutionCanava, B. / Vigneron, J. / Etcheberry, A. / Stchakovsky, M. / Gaston, J. P. / Electrochemical Society et al. | 2003
- 346
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Characterisation of Bulk and Surface Properties in Semiconductors Using Non-Contacting TechniquesCastaldini, A. / Cavalcoli, D. / Cavallini, A. / Rossi, M. / Electrochemical Society et al. | 2003
- 357
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Focused Ion Beam Analysis of Cu/Low-k Metallization StructuresBender, H. / Electrochemical Society et al. | 2003
- 373
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Characterization and Mechanism of Device Failure due to Hollow Via FormationHatcher, C. / Lappan, R. / Prasad, J. / Engle, M. / Electrochemical Society et al. | 2003
- 378
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ZrO~2 as Dielectric Material for Device Characterization with Scanning Capacitance MicroscopyBrezna, W. / Harasek, S. / Enichlmair, H. / Bertagnolli, E. / Gornik, E. / Smoliner, J. / Electrochemical Society et al. | 2003
- 386
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Potential and Pitfalls of the Diode Characterization Technique for ULSI Device AnalysisPoyai, A. / Simoen, E. / Claeys, C. / Electrochemical Society et al. | 2003
- 396
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In-Situ Electrochemical Sensor for Early Detection of Plating Problems in Copper Metallization ProcessJaworski, A. / Wikiel, K. / Electrochemical Society et al. | 2003
- 409
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Semiconductor Metrology Requirements over the Next 15 YearsDiebold, A. C. / Electrochemical Society et al. | 2003
- 420
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Noise Diagnostics of Advanced Silicon Substrates and Deep Submicron Process ModulesSimoen, E. / Mercha, A. / Claeys, C. / Electrochemical Society et al. | 2003
- 440
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High Resolution X-Ray Reflectometry: Theory, Practice, Accuracy and PrecisionMatyi, R. J. / Electrochemical Society et al. | 2003
- 455
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Watching Chips Work: Optical Imaging of Hot Carriers in ICsTsang, J. C. / Electrochemical Society et al. | 2003
- 467
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Measurement of Local Strain in Semiconductor Materials by Using Synchrotron X-Ray MicrobeamMatsui, J. / Tsusaka, Y. / Kagoshima, Y. / Yokoyama, K. / Electrochemical Society et al. | 2003
- 479
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Direct Observation of Substitutional and Interstitial Iron Atoms in Silicon by High-Temperature and In-Beam Mossbauer SpectroscopyYoshida, Y. / Electrochemical Society et al. | 2003
- 493
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Quantitative Evaluation of Iron at the Silicon Surface after Wet Cleaning TreatmentsCaputo, D. / Bacciaglia, P. / Carpanese, C. / Polignano, M. L. / Lazzeri, P. / Bersani, M. / Vanzetti, L. / Pianetta, P. / Moro, L. / Electrochemical Society et al. | 2003
- 505
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Influence of Cobalt Contamination in the Measurement of Diffusion Length of p-type CZ Silicon WafersPic, N. / Polignano, M. L. / Caputo, D. / Salva, G. / Sardo, M. / Danel, A. / Electrochemical Society et al. | 2003
- 516
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Nitrogen Concentration Measurement of CZ SiliconInoue, N. / Fujiyama, N. / Yagi, H. / Electrochemical Society et al. | 2003
- 527
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Extraction of the Capacitance of Ultrathin High-kappa Gate DielectricsKar, S. / Electrochemical Society et al. | 2003
- 540
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Optical Surface Analysis of Transparent Substrates for Manufacturing ApplicationsBechtler, L. / Velidandla, V. / Lane, G. / Electrochemical Society et al. | 2003