Method of making a semiconductor device formed by thermal annealing (English)
Free access
- New search for: BREYMESSER ALEXANDER
- New search for: VOSS STEPHAN
- New search for: BREYMESSER ALEXANDER
- New search for: VOSS STEPHAN
2017
- Patent / Electronic Resource
-
Title:Method of making a semiconductor device formed by thermal annealing
-
Patent number:US9704712
-
Patent applicant:
-
Patent family:
-
Contributors:BREYMESSER ALEXANDER ( author ) / VOSS STEPHAN ( author )
-
Publisher:
- New search for: Europäisches Patentamt
-
Publication date:2017-07-11
-
Type of media:Patent
-
Type of material:Electronic Resource
-
Language:English
- New search for: H01L
- Further information on International Patent Classification
-
Classification:
IPC: H01L Halbleiterbauelemente, SEMICONDUCTOR DEVICES -
Source: