Diamond grit-based field emission cathodes (English)
- New search for: Geis, M.W.
- New search for: Twichell, J.C.
- New search for: Efrernow, N.N.
- New search for: Krohn, K.E.
- New search for: Stern, M.B.
- New search for: Lyszczarz, T.M.
- New search for: Geis, M.W.
- New search for: Twichell, J.C.
- New search for: Efrernow, N.N.
- New search for: Krohn, K.E.
- New search for: Stern, M.B.
- New search for: Lyszczarz, T.M.
In:
IEEE Electron Device Letters
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18
, 12
;
595-598
;
1997
- Article (Journal) / Electronic Resource
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Title:Diamond grit-based field emission cathodes
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Contributors:Geis, M.W. ( author ) / Twichell, J.C. ( author ) / Efrernow, N.N. ( author ) / Krohn, K.E. ( author ) / Stern, M.B. ( author ) / Lyszczarz, T.M. ( author )
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Published in:IEEE Electron Device Letters ; 18, 12 ; 595-598
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Publisher:
- New search for: IEEE
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Publication date:1997-12-01
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Size:104604 byte
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 18, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 577
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Correlation Between Lifetime, Temperature, and Electrical Stress for Gate Oxide Lifetimc TestingEriguchi, K. / Niwa, M. et al. | 1997
- 577
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Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testingEriguchi, K. / Niwa, M. et al. | 1997
- 580
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Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devicesGupta, A. / Peng Fang, / Song, M. / Ming-Ren Lin, / Wollesen, D. / Chen, K. / Hu, C. et al. | 1997
- 583
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Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B. / Li, M.F. / Lou, C.L. / Chim, W.K. / Chan, D.S.H. / Lo, K.F. et al. | 1997
- 586
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1.1 kV 4H-SiC power UMOSFETsAgarwal, A.K. / Casady, J.B. / Rowland, L.B. / Valek, W.F. / White, M.H. / Brandt, C.D. et al. | 1997
- 589
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The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structureShenoy, P.M. / Baliga, B.J. et al. | 1997
- 592
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Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitorsAgarwal, A.K. / Seshadri, S. / Rowland, L.B. et al. | 1997
- 595
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Diamond grit-based field emission cathodesGeis, M.W. / Twichell, J.C. / Efrernow, N.N. / Krohn, K.E. / Stern, M.B. / Lyszczarz, T.M. et al. | 1997
- 599
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Fabrication of low-stress dielectric thin-film for microsensor applicationsChou, B.C.S. / Jin-Shown Shie, / Chung-Nan Chen, et al. | 1997
- 602
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Kink-free SOI analog circuit design with floating-body/NFD MOSFETsChang, D. / Fossum, J.G. / Reynolds, S.K. / Pelella, M.M. et al. | 1997
- 606
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Stacked pentacene layer organic thin-film transistors with improved characteristicsLin, Y.-Y. / Gundlach, D.J. / Nelson, S.F. / Jackson, T.N. et al. | 1997
- 609
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Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substratesWu, C.C. / Theiuss, S.D. / Gu, G. / Lu, M.H. / Sturm, J.C. / Wagner, S. / Forrest, S.R. et al. | 1997
- 613
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Dynamics of the kink effect in InAlAs/InGaAs HEMTsErnst, A.N. / Somerville, M.H. / Del Alamo, J.A. et al. | 1997
- 616
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A field-enhanced generation model for field emission from p-type siliconQing-An Huang, / Ming Qin, / Bin Zhang, / Sin, J.K.O. / Poon, M.C. et al. | 1997
- 619
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Positive Temperature Dependence of the Electron Impact Ionization Coefficient in In~0~.~5~3Ga~0~.~4~7As/InP HBT'sNeviani, A. / Meneghesso, G. / Zanoni, E. / Hafizi, M. / Canali, C. et al. | 1997
- 619
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Positive temperature dependence of the electron impact ionization coefficient in In/sub 0.53/Ga/sub 0.47/As/InP HBTsNeviani, A. / Meneghesso, G. / Zanoni, E. / Hafizi, M. / Canali, C. et al. | 1997
- 622
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IGBT negative gate capacitance and related instability effectsOmura, I. / Ohashi, H. / Fichtner, W. et al. | 1997
- 625
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High-Performance 0.07-m CMOS with 9.5-ps Gate Delay and 150 GHz f~TWann, C. / Assaderaghi, F. / Shi, L. / Chan, K. / Cohen, S. / Hovel, H. / Jenkins, K. / Lee, Y. / Sadana, D. / Viswanathan, R. et al. | 1997
- 625
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High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz f/sub T/Wann, C. / Assaderaghi, F. / Shi, L. / Chan, K. / Cohen, S. / Hovel, H. / Jenkins, K. / Lee, Y. / Sadana, D. / Viswanathan, R. et al. | 1997