Electroluminescence Transition From Visible- to Ultraviolet-Dominant Mode in n-Mn0.04Zn0.96O/i-ZnGa2O4/n-GaN Structure With Highly Ultraviolet Detection Performance (English)
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In:
IEEE electron device letters
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34
, 3
; 423-425
;
2013
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ISSN:
- Article (Journal) / Print
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Title:Electroluminescence Transition From Visible- to Ultraviolet-Dominant Mode in n-Mn0.04Zn0.96O/i-ZnGa2O4/n-GaN Structure With Highly Ultraviolet Detection Performance
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Contributors:
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Published in:IEEE electron device letters ; 34, 3 ; 423-425
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2013
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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- New search for: 53.51
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Source:
Table of contents – Volume 34, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 331
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EDITORIAL - New Subject Category on Emerging Technologies and DevicesCressler, J D et al. | 2013
- 332
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Changes to the Editorial BoardChatterjee, A et al. | 2013
- 336
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LETTERS - Silicon and Column IV Semiconductor Devices - Influence of Guard-Ring Structure on the Dark Count Rates of Silicon PhotomultipliersSul, W-S et al. | 2013
- 339
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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 °C Si2H6 PassivationGong, X et al. | 2013
- 342
-
Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETsLee, J et al. | 2013
- 345
-
An 11%-Power-Conversion-Efficiency Organic-Inorganic Hybrid Solar Cell Achieved by Facile Organic PassivationLiu, D et al. | 2013
- 348
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Mechanism for Leakage Reduction by La Incorporation in a HfO2/SiO2/Si Gate StackManabe, K et al. | 2013
- 351
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Electron Trap Transformation Under Positive-Bias Temperature StressingGao, Y et al. | 2013
- 354
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Compound Semiconductor Devices - High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETsPark, B-R et al. | 2013
- 357
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1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI PlatformJiang, Q et al. | 2013
- 360
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Effect of Interface States on the Performance of Antimonide nMOSFETsAli, A et al. | 2013
- 363
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Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar CellsDickerson, J R et al. | 2013
- 366
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High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/SiNx PassivationTang, Z et al. | 2013
- 369
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An Etch-Stop Barrier Structure for GaN High-Electron Mobility TransistorsLu, B et al. | 2013
- 372
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Improved Thermal Stability and Reduced Contact Resistance of Ohmic Contacts on N-Face n-Type GaN With Laser-Assisted DopingKim, S J et al. | 2013
- 375
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AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High-k Oxynitride TaOxNy Gate DielectricSato, T et al. | 2013
- 378
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Quaternary Barrier InAlGaN HEMTs With fr/fmax of 230/300 GHzWang, R et al. | 2013
- 381
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Heterojunction-Free GaN Nanochannel FinFETs With High PerformanceIm, K-S et al. | 2013
- 384
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Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 °CVeliadis, V et al. | 2013
- 387
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Memory Devices and Technology - An Empirical Model for RRAM Resistance in Low- and High-Resistance StatesPuglisi, F M et al. | 2013
- 390
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Modeling Erratic Bits Temperature Dependence for Monte Carlo Simulation of Flash ArraysZambelli, C et al. | 2013
- 393
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A Novel Charge-Trapping-Type Memory With Gate-All-Around Poly-Si Nanowire and HfAlO Trapping LayerLee, K-H et al. | 2013
- 396
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Comprehensive Understanding on the Role of Tunnel Oxide Top Nitridation for the Reliability of Nanoscale Flash MemoryKim, T et al. | 2013
- 399
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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access MemoryChang, K-C et al. | 2013
- 402
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Determination of Ultimate Leakage Through Rutile TiO2 and Tetragonal ZrO2 From Ab Initio Complex Band CalculationsClima, S et al. | 2013
- 405
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Direct Impact of Chemical Bonding of Oxynitride on Boron Penetration and Electrical Oxide Hardening for Nanoscale Flash MemoryKim, T et al. | 2013
- 408
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Junction Engineering of 1T-DRAMsGiusi, G et al. | 2013
- 411
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Analysis of Intrinsic Variation of Data Retention in Phase-Change Memory Using Phase-Field MethodKwon, Y et al. | 2013
- 414
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On the Bipolar Resistive Switching Memory Using TiN/Hf/HfO2/Si MIS StructureWu, Y-H et al. | 2013
- 417
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Thin-Film Transistors - Enhanced Current Drive of Double-Gate α-IGZO Thin-Film TransistorsChen, T-L et al. | 2013
- 420
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Optoelectronics, Displays, and Imaging - Ultraviolet Detector Based on SrZr0.1Ti0.9O3 FilmZhang, M et al. | 2013
- 423
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Electroluminescence Transition From Visible- to Ultraviolet-Dominant Mode in n-Mn0.04Zn0.96O/i-ZnGa2O4/n-GaN Structure With Highly Ultraviolet Detection PerformanceZhou, H et al. | 2013
- 426
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High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb SubstratesPlis, E et al. | 2013
- 429
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A Dual-Junction Single-Photon Avalanche Diode in 130-nm CMOS TechnologyHenderson, R K et al. | 2013
- 432
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Solid-State Power and High-Voltage Devices - Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access RegionJurkovič, M et al. | 2013
- 435
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Materials, Processing, and Packaging - Backside-Process-Induced Junction Leakage and Process Improvement of Cu TSV Based on Cu/Sn and BCB Hybrid BondingChang, Y-J et al. | 2013
- 438
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Compact Models of Voltage Drops in Power Delivery Network for TSV-Based Three-Dimensional IntegrationHe, H et al. | 2013
- 441
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Air-Gap Through-Silicon ViasHuang, C et al. | 2013
- 444
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GeO2 Passivation for Low Surface Recombination Velocity on Ge SurfaceChen, Y-Y et al. | 2013
- 447
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Solid-State Device Phenomena - A New Millimeter-Wave Fixture Deembedding Method Based on Generalized Cascade Network ModelLoo, X S et al. | 2013
- 450
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Molecular and Organic Devices - A Study on the Sign Inversion Behavior of Organic MagnetoresistanceZhang, T et al. | 2013
- 453
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Sensors and Actuators - Investigation on Performance and Vacuum Package of MEMS Infrared Focal Plane ArraysOu, Y et al. | 2013
- 456
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Experimental and Simulated Cycling of ISFET Electric Fields for Drift ResetWelch, D et al. | 2013
- 459
-
Resonant Magnetic Field Sensor With Capacitive Driving and Electromagnetic Induction SensingWu, G et al. | 2013
- 462
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Vacuum and Electron Devices - Fabrication of 340-GHz Folded Waveguides Using KMPR PhotoresistLi, H et al. | 2013
- 465
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Emerging Technologies and Devices - Graphene FETs for Zero-Bias Linear Resistive FET MixersMoon, J S et al. | 2013
- 468
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CORRESPONDENCE - Corrections to "Demonstration of Addressable Organic Resistive Memory Utilizing a PC-Interface Memory Cell Tester"Cho, B et al. | 2013
- 469
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IEEE ELECTRON DEVICES SOCIETY MEETINGS CALENDAR| 2013
- 471
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Information for Authors| 2013
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ANNOUNCEMENTS - Call for Papers — IEEE TRANSACTIONS ON ELECTRON DEVICES Special Issue on GaN Electronic Devices| 2013