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    Electronic and transport properties of a biased multilayer hexagonal boron nitride (English)

    In: The European Physical Journal B ; 85 , 9 ; 1-7  ; 2012

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    Abstract We explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed (E 0) required to close the band gap decreases with the increasing N and can be approximated by E 0 = 3.2 / (N − 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.

    Table of contents – Volume 85, Issue 9

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    The Boltzmann equation for a spinor distribution function with spinor momentum at the Fermi level
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    Tang, K. / Ni, Z. Y. / Liu, Q. H. / Quhe, R. G. / Zheng, Q. Y. / Zheng, J. X. / Fei, R. X. / Gao, Z. X. / Lu, J. et al. | 2012
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    How to get this title?

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    Commercial Copyright fee: €39.95 Basic fee: €4.00 Total price: €43.95
    Academic Copyright fee: €15.00 Basic fee: €2.00 Total price: €17.00

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