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A theory is developed to explain the angular dependence of X-ray photoelectrons quantum yield under X-ray diffraction in an ideal crystal with the surface layer disturbed due to diffusion or ion implantation. A procedure is suggested for the computation of photoemission curves for the most general relation between parameters characterizing both, the experimental conditions and the disturbed layer itself. A particular example of Bragg diffraction of non-polarized Cu K(alpha)-radiation on a silicon crystal with a model disturbed layer of about 3 micrometer is considered. The distortions correspond to a gradual lattice compression when approaching the surface. 'Proper' X-ray and photoemission cuves (without convolution) are shown to be more informative than those obtained by a double-crystal spectrometer.