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For experiments at the European X-Ray Free-Electron Laser(XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements include a high dynamic range of 0, 1 to more than 104 photons of 12.4 keV per pixel within an XFEL pulse of less than 100 fs duration, and a radiation tolerance for doses up to 1 GGy for 3 years of operation. AGIPD isa hybrid-pixel detector system with a total of 1024 × 1024 pixels of size 200 µm × 200 µm. AGIPD willuse 16 p+n-silicon sensors of 500 m thickness. The nominal operating voltage is 500 V, however, for special applications operation close to 1000 V should be possible. Experimental data on the X-ray-dose dependence of the oxide-chargedensity and of the surface-current density have been implemented in the SYNOPSYS TCAD simulation program in order to optimize the design of the pixel and guard-ring layout. The methodology of the sensor design, the optimization of the most relevant parameters, and the optimized layout are described. Finally, the simulated performance, in particular the breakdown voltage, dark current and inter-pixel capacitance as function of the X-ray dose are presented.