MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional Diversification (English)
- New search for: Tillack, B.
- New search for: Heinemann, B.
- New search for: Kaynak, M.
- New search for: Knoll, D.
- New search for: Lischke, S.
- New search for: Mai, A.
- New search for: Rücker, H.
- New search for: Yamamoto, Y.
- New search for: Zimmermann, L.
- New search for: Tillack, B.
- New search for: Heinemann, B.
- New search for: Kaynak, M.
- New search for: Knoll, D.
- New search for: Lischke, S.
- New search for: Mai, A.
- New search for: Rücker, H.
- New search for: Yamamoto, Y.
- New search for: Zimmermann, L.
In:
Meeting of the Electrochemical Society, 224, Symposium on ULSI Process Integration, 8
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115-123
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2013
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ISBN:
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ISSN:
- Conference paper / Print
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Title:MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional Diversification
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Contributors:Tillack, B. ( author ) / Heinemann, B. ( author ) / Kaynak, M. ( author ) / Knoll, D. ( author ) / Lischke, S. ( author ) / Mai, A. ( author ) / Rücker, H. ( author ) / Yamamoto, Y. ( author ) / Zimmermann, L. ( author )
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Published in:ECS Transactions ; 58, 9 ; 115-123
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington
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Publication date:2013
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Size:9 Seiten, Bilder, 23 Quellen
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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FDSOI Technology: A Power Efficient Solution Down To 10nmFaynot, O. / Vinet, M. / Fenouillet, C. / Weber, O. / Perreau, P. / Grenouillet, L. / Andrieu, F. / Poiroux, T. / Deleonibus, S. et al. | 2013
- 9
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Memristive Devices for Computing: Mechanisms, Applications and ChallengesYang, J.J. / Choi, B.J. / Zhang, M.X. / Torrezan, A.C. / Strachan, J.P. / Williams, R.S. / Electrochemical Society et al. | 2013
- 29
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Mn5Ge3C0.8 Contacts for Spin Injection into GeFischer, I.A. / Sürgers, C. / Petit, M. / Thanh, V. Le / Schulze, J. et al. | 2013
- 29
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(Invited) Mn~5Ge~3C~0~.~8 Contacts for Spin Injection Into GeFischer, I.A. / Surgers, C. / Petit, M. / Le Thanh, V. / Schulze, J. / Electrochemical Society et al. | 2013
- 37
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(Invited) Development of Multifunctional Liner/Barrier Systems for Sub-14nm MetallizationEisenbraun, E. / Electrochemical Society et al. | 2013
- 37
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Development of Multifunctional Liner/Barrier Systems for Sub-14nm MetallizationEisenbaum, E. et al. | 2013
- 43
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Optimization of Cu Damascene Electrodeposition Process in ULSI for Yield and Reliability ImprovementShao, I. / Cheng, T. / Findeis, P. / Kelly, J. / Ahmed, S. / Angyal, M. / Xu, Y. / Li, B. / Tinkler, J. / Lustig, N. et al. | 2013
- 53
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Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier HeightYamamoto, K. / Asakawa, K. / Wang, D. / Nakashima, H. / Electrochemical Society et al. | 2013
- 63
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(Invited) Single Electron and Single Atom CMOS PerspectivesJehl, X. / Sanquer, M. / Vinet, M. / Wacquez, R. / Electrochemical Society et al. | 2013
- 63
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Single Electron and Single Atom CMOS PerspectivesJehl, Xavier / Sanquer, Marc / Vinet, M. / Wacquez, Romain et al. | 2013
- 73
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High-speed operation of Si single-electron transistorTakahashi, Yasuo / Takenaka, Hiroto / Uchida, Takafumi / Arita, Masashi / Fujiwara, Akira / Inokawa, Hiroshi et al. | 2013
- 73
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(Invited) High-Speed Operation of Si Single-Electron TransistorTakahashi, Y. / Takenaka, H. / Uchida, T. / Arita, M. / Fujiwara, A. / Inokawa, H. / Electrochemical Society et al. | 2013
- 81
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Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor DepositionBerger, Paul R. / Ramesh, Anisha / Loo, Roger et al. | 2013
- 81
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(Invited) Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor DepositionBerger, P. / Ramesh, A. / Loo, R. / Electrochemical Society et al. | 2013
- 89
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Dopant-atom-based Tunnel SOI-MOSFETsTabe, M. / Moraru, D. / Hamid, E. / Samanta, A. / Anh, L.T. / Mizuno, T. / Mizuta, H. et al. | 2013
- 89
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(Invited) Dopant-Atom-Based Tunnel SOI-MOSFETsTabe, M. / Moraru, D. / Hamid, E. / Samanta, A. / Anh, L.T. / Mizuno, T. / Mizuta, H. / Electrochemical Society et al. | 2013
- 97
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Wide Bandgap Heterojunctions on Crystalline SiliconSturm, J.C. / Avasthi, S. / Nagamatsu, K. / Jhaveri, J. / McClain, W. / Man, G. / Kahn, A. / Schwartz, J. / Wagner, S. et al. | 2013
- 109
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(Invited) Status and Future of IC Analog TechnologiesBergemont, A. / Electrochemical Society et al. | 2013
- 109
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Status and Future of IC Analog TechnologiesBergemont, Albert et al. | 2013
- 115
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(Invited) MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional DiversificationTillack, B. / Heinemann, B. / Kaynak, M. / Knoll, D. / Lischke, S. / Mai, A. / Rucker, H. / Yamamoto, Y. / Zimmermann, L. / Electrochemical Society et al. | 2013
- 115
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MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional DiversificationTillack, B. / Heinemann, B. / Kaynak, M. / Knoll, D. / Lischke, S. / Mai, A. / Rücker, H. / Yamamoto, Y. / Zimmermann, L. et al. | 2013
- 125
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Bio-MEMS Chip for Bacteria Detection - A Challenge of Si Technology to Biomedical FieldIshii, H. / Sawada, K. / Ishida, M. / Machida, K. / Iida, K. / Saito, M. / Yoshida, S. et al. | 2013
- 137
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Performance Enhancement Technologies in III-V/Ge MOSFETsTakagi, S. / Zhang, R. / Kim, S.H. / Yokohama, M. / Takenaka, M. et al. | 2013
- 137
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(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETsTakagi, S. / Zhang, R. / Kim, S.H. / Yokoyama, M. / Takenaka, M. / Electrochemical Society et al. | 2013
- 149
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Heteroepitaxial Growth of Sn-related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and OpportunitiesNakatsuka, Osamu / Taoka, Noriyuki / Asano, Takanori / Yamaha, Takashi / Kurosawa, Masashi / Sakashita, Mitsuo / Zaima, Shigeaki et al. | 2013
- 149
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(Invited) Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and OpportunitiesNakatsuka, O. / Taoka, N. / Asano, T. / Yamaha, T. / Kurosawa, M. / Sakashita, M. / Zaima, S. / Electrochemical Society et al. | 2013
- 157
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The Effect of Carbon Doping on Structural and Magnetic Properties of Mn5Ge3/Ge HeterosctructuresSpiesser, A. / Dau, M.T. / Michez, L.A. / Petit, M. / Thanh, V. Le et al. | 2013
- 157
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(Invited) The Effect of Carbon Doping on Structural and Magnetic Properties of Mn~5Ge~3/Ge HeterosctructuresSpiesser, A. / Dau, M.T. / Michez, L.A. / Petit, M. / Le Thanh, V. / Electrochemical Society et al. | 2013
- 167
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Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge ContactsNakashima, Hiroshi / Yamamoto, Keisuke / Wang, Dong et al. | 2013
- 167
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(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge ContactsNakashima, H. / Yamamoto, K. / Wang, D. / Electrochemical Society et al. | 2013
- 179
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High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature Sn Induced-Melting GrowthKinoshita, Y. / Matsumura, R. / Sadoh, T. / Nishimura, T. / Miyao, M. / Electrochemical Society et al. | 2013
- 185
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Characterization of Local Strain Structures in Heteroepitaxial Ge~1~-~xSn~x/Ge Microstructures by Using Microdiffraction MethodIke, S. / Moriyama, Y. / Kurosawa, M. / Taoka, N. / Nakatsuka, O. / Imai, Y. / Kimura, S. / Tezuka, T. / Zaima, S. / Electrochemical Society et al. | 2013
- 195
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(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD ProcessingSakuraba, M. / Murota, J. / Electrochemical Society et al. | 2013
- 195
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Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD ProcessingSakuraba, Masao / Murota, Junichi et al. | 2013
- 201
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Atomically Flat Germanium (111) Surface by Hydrogen AnnealingNishimura, T. / Kabuyanagi, S. / Lee, C. / Yajima, T. / Nagashio, K. / Toriumi, A. / Electrochemical Society et al. | 2013
- 207
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Formation and Characterization of Strained Si~1~-~XGe~x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate HeatingUeno, N. / Sakuraba, M. / Murota, J. / Sato, S. / Electrochemical Society et al. | 2013
- 213
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(Invited) Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible ElectronicsSadoh, T. / Park, J.H. / Kurosawa, M. / Miyao, M. / Electrochemical Society et al. | 2013
- 213
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Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible ElectronicsSadoh, T. / Park, J.H. / Kurosawa, M. / Miyao, M. et al. | 2013
- 223
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Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate HeatingAbe, Y. / Kubota, S. / Sakuraba, M. / Murota, J. / Sato, S. / Electrochemical Society et al. | 2013
- 231
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(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic ApplicationMiyazaki, S. / Ikeda, M. / Makihara, K. / Electrochemical Society et al. | 2013
- 231
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Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic ApplicationMiyazaki, Seiichi / Ikeda, Mitsuhisa / Makihara, Katsunori et al. | 2013
- 239
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Source and Drain Contact Module for FDSOI MOSFETs: Silicidation and Strain EngineeringCarron, V. / Nemouchi, F. / Hartmann, J.M. / Cooper, D. / Damlencourt, J.F. / Bernasconi, S. / Favier, S. / Morand, Y. / Electrochemical Society et al. | 2013
- 249
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Fin Doping by Hot Implant for 14nm FinFET Technology and BeyondWood, B.S. / Khaja, F.A. / Colombeau, B.P. / Sun, S. / Waite, A. / Jin, M. / Chen, H. / Chan, O. / Thanigaivelan, T. / Pradhan, N. et al. | 2013
- 265
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(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETsTsuchiya, T. / Tamura, N. / Sakakidani, A. / Sonoda, K. / Kamei, M. / Yamakawa, S. / Kuwabara, S. / Electrochemical Society et al. | 2013
- 281
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Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-k/Metal-Gate pMOSFETsSimoen, E. / Lee, J.W. / Veloso, A. / Paraschiv, V. / Horiguchi, N. / Claeys, C. et al. | 2013
- 293
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Resistive Switching Properties of SiO~x/TiO~2 Multi-Stack in Ti-Electrode MIM DiodesOhta, A. / Makihara, K. / Fukusima, M. / Murakami, H. / Higashi, S. / Miyazaki, S. / Electrochemical Society et al. | 2013
- 301
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Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al~2O~3/Ge InterfaceShibayama, S. / Kato, K. / Sakashita, M. / Takeuchi, W. / Taoka, N. / Nakatsuka, O. / Zaima, S. / Electrochemical Society et al. | 2013
- 309
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High Electron Mobility in Germanium Junctionless n-MOSFETsKabuyanagi, Shoichi / Nishimura, Tomonori / Nagashio, Kosuke / Toriumi, Akira et al. | 2013