Effects of annealing in O2 and N2 on the microstructure of metal organic chemical vapor deposition Ta2O5 film and the interfacial SiO2 layer (English)
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In:
Journal of Materials Science - Materials in Electronics
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10
, 2
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113-119
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1999
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ISSN:
- Article (Journal) / Print
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Title:Effects of annealing in O2 and N2 on the microstructure of metal organic chemical vapor deposition Ta2O5 film and the interfacial SiO2 layer
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Additional title:Auswirkungen der Wärmebehandlung in O2 und N2 auf das Mikrogefüge von mittels MOCVD abgeschiedenen Ta2O5-Dünnschichten und der SiO2-Grenzflächenschicht
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Contributors:
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Published in:Journal of Materials Science - Materials in Electronics ; 10, 2 ; 113-119
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Publisher:
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Publication date:1999
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Size:7 Seiten, 6 Bilder, 1 Tabelle, 11 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:metallorganische Gasphasenabscheidung , Tantal , Oxid , Siliciumdioxid , Halbleitersubstrat , Silicium , Werkstoffgefüge , Röntgenfeinstrukturanalyse , Transmissionselektronenmikroskop , Auger-Elektronenspektrometrie , Wärmebehandlung , Stickstoff , Sauerstoff , chemische Zusammensetzung , Morphologie , Kristallisation , Rauigkeit , Kristallorientierung , Phasenumwandlung , amorphe dünne Schicht , Tantaloxid , Rasterkraftmikroskopie
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Source:
Table of contents – Volume 10, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 81
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The piezoelectric properties and the stability of the resonant frequency in Mn–Cr Co-doped PSZT ceramicsCheon, Chae Il / Lee, Hyeung Gyu et al. | 1999
- 85
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Microstructural change and interfacial reactions of Pt/Ti thin films on $ SiN_{x} $/Si during annealing in various ambientsKim, Dong-Chan / Lee, Tae Gon / Kim, Young-Ho et al. | 1999
- 97
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Characterization of titanium polycide films by atomic force microscopeUmapathi, B. / Lahiri, S. K. / Kal, S. et al. | 1999
- 101
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Reductive ion insertion into thin-film indium tin oxide (ITO) in aqueous acidic solutions: the effect of leaching of indium from the ITOMonk, P. M. S. / Man, Che M. et al. | 1999
- 109
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Superconductivity in the chromium-doped Tl-1212 phase ($ Tl_{0.8} $$ M_{0.2} $)$ Sr_{2} $($ Ca_{1-x} $$ Cr_{x} $)$ Cu_{2} $$ O_{7} $ (M=Bi and In)Abd-Shukor, R. / Tiew, C. H. et al. | 1999
- 109
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Superconductivity in the chromium- doped Ti-1212 phase (Tl~0~.~8M~0~.~2)Sr~2(Ca~1~-~xCr~x)Cu~2O~7 (M = Bi and In)Abd-Shukor, R. / Tiew, C. H. et al. | 1999
- 113
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Effects of annealing in $ O_{2} $ and $ N_{2} $ on the microstructure of metal organic chemical vapor deposition $ Ta_{2} $$ O_{5} $ film and the interfacial $ SiO_{2} $ layerPark, Young-Bae / Li, Xiaodong / Nam, Gap-Jin / Rhee, Shi-Woo et al. | 1999
- 121
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Hydrazine method of synthesis of γ-$ Fe_{2} $$ O_{3} $ useful in ferrites preparation. Part III – study of hydrogen iron oxide phase in γ-$ Fe_{2} $$ O_{3} $Rane, K. S. / Verenkar, V. M. S. / Pednekar, R. M. / Sawant, P. Y. et al. | 1999
- 121
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Hydrazine method of synthesis of gamma-Fe2O3 useful in ferrites preparation. Part III - study of hydrogen iron oxide phase in gamma-Fe2O3Rane, K.S. / Verenkar, V.M.S. / Pednekar, R.M. / Sawant, P.Y. et al. | 1999
- 133
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Hydrazine method of synthesis of γ-$ Fe_{2} $$ O_{3} $ useful in ferrites preparation. Part IV – preparation and characterization of magnesium ferrite, $ MgFe_{2} $$ O_{4} $ from γ-$ Fe_{2} $$ O_{3} $ obtained from hydrazinated iron oxyhydroxides and iron (II) carboxylato-hydrazinatesRane, K. S. / Verenkar, V. M. S. / Sawant, P. Y. et al. | 1999
- 141
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Criteria for uniform thin film formation for polymeric materialsPethrick, R. A. / Rankin, K. E. et al. | 1999
- 145
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Effect of the solution pH on the growth of spray-deposited $ CuInS_{2} $ thin filmsSubba Ramaiah, K. / Sundara Raja, V. et al. | 1999
- 151
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Negative-differential-resistance effects in amorphous $ CuInS_{2} $ thin filmKanzari, M. / Rezig, B. et al. | 1999
- 155
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Minority carrier diffusion length in undoped p-type epitaxially grown $ Cd_{x} $$ Hg_{1-x} $TeBarton, S. C. / Hastings, M. / Jones, C. L. / Capper, P. / Metcalfe, N. et al. | 1999
- 161
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Diode $ R_{0} $A in p-type epitaxially grown undoped $ Cd_{x} $$ Hg_{1-x} $TeBarton, S. C. / Hastings, M. / Jones, C. L. / Capper, P. / Metcalfe, N. et al. | 1999
- 161
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Diode R^oA in p-type epitaxially grown undoped Cd~xHg~1~-~xTeBarton, S. C. / Hastings, M. / Jones, C. L. / Capper, P. / Metcalfe, N. et al. | 1999