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Initial stages of interface formation in group IV-IV systems: Sn ON Ge(100) and Ge(111)
National licenceElsevier | 1986| -
Invited: Dopants and Intrinsic Point-Defects During Si Device Processing
British Library Conference Proceedings | 1998| -
Dopant electrical activity and majority-carrier mobility in B- and Sb-d-doped Si thin films
Online Contents | 1993| -
Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)
National licenceElsevier | 1983| -
Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities
Online Contents | 1993| -
Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy
Online Contents | 1993| -
Nonequilibrium effects in the channeling of energetic particles through ultrathin Si/Ge/Si heterostructures: A Monte Carlo study
National licenceAmerican Physical Society | 1989| -
Initial stages of interface formation in group IV-IV systems: Sn on Ge(100) and Ge(111)
National licenceElsevier | 1987| -
Time dependence of dopant diffusion in d-doped Si films and properties of Si point defects
Online Contents | 1994| -
Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces
National licenceElsevier | 1984| -
Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)
National licenceElsevier | 1984|
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