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Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices
British Library Online Contents | 2013| -
Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures (7 pages)
British Library Online Contents | 2011| -
Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices
British Library Online Contents | 2014| -
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
British Library Online Contents | 2012| -
Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AIInN
British Library Online Contents | 2010| -
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content (3 pages)
British Library Online Contents | 2008| -
Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes
British Library Online Contents | 2010| -
High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods
British Library Online Contents | 2009| -
Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors
British Library Online Contents | 2008| -
Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling
British Library Online Contents | 2009| -
Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers (5 pages)
British Library Online Contents | 2009| -
Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures (3 pages)
British Library Online Contents | 2009|
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