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Origin of recombination transitions at the lattice-matched GaInAsSb-GaSb n-N-type-II heterojunctions
British Library Online Contents | 1994| -
Impurity incorporation and structural defects in hydride VPE InP films
National licenceElsevier | 1986| -
InAs d-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
British Library Online Contents | 2003| -
InAs delta-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
British Library Conference Proceedings | 2003| -
Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
British Library Conference Proceedings | 2008| -
Strained In~xGa~1~-~xAs/GaAs multiple quantum wells grown by MOVPE
British Library Online Contents | 1999| -
Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
British Library Conference Proceedings | 2008| -
Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
British Library Online Contents | 2008| -
Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
British Library Online Contents | 2008| -
Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
British Library Online Contents | 2007| -
Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
British Library Conference Proceedings | 2007| -
Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers
British Library Online Contents | 2002| -
InAs/GaAs multiple quantum dot structures grown by LP-MOVPE
British Library Online Contents | 2000| -
Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
British Library Online Contents | 2002| -
Low temperature photoluminescence of Ga~0~.~8~4In~0~.~1~6As~0~.~2~2Sb~0~.~7~8 solid solutions lattice matched to InAs
British Library Online Contents | 2001|
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