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IOP Institute of Physics   Chemistry   Clear all

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  1. Real-time interferometric monitoring and measuring of photopolymerization based stereolithographic additive manufacturing process: sensor model and algorithm

    Paper
    X Zhao / D W Rosen | IOP Institute of Physics | 2017

  2. Phase-compensation-based dynamic time warping for fault diagnosis using the motor current signal

    National licence
    Paper
    D Zhen / H L Zhao / F Gu et al. | IOP Institute of Physics | 2012

  3. Layered oxychalcogenide in the Bi–Cu–O–Se system as good thermoelectric materials

    Paper
    C Barreteau / L Pan / E Amzallag et al. | IOP Institute of Physics | 2014

  4. High temperature and frequency pressure sensor based on silicon-on-insulator layers

    National licence
    Y L Zhao / L B Zhao / Z D Jiang | IOP Institute of Physics | 2006

  5. Tip hydrogen sensor based on liquid-filled in-fiber Fabry–Pérot interferometer with Pt-loaded WO3 coating

    Paper
    Ben Xu / F P Zhao / D N Wang et al. | IOP Institute of Physics | 2020

  6. Reconstruction of electrostatic force microscopy image for nanoscale potential distributions with potential steps

    Paper
    X D Ding / P F Gao / L B Zhao et al. | IOP Institute of Physics | 2017

  7. A GaN photodetector integrated structure for wavelength characterization of ultraviolet light

    National licence
    D G Zhao / D S Jiang / J J Zhu et al. | IOP Institute of Physics | 2008

  8. Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

    Paper
    E Gaubas / T Ceponis / D Dobrovolskas et al. | IOP Institute of Physics | 2017

  9. The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

    National licence
    H Wang / D S Jiang / J J Zhu et al. | IOP Institute of Physics | 2009

  10. Effect of post annealing on the band gap of MgxZn1−xO thin films

    National licence
    D Y Jiang / D Z Shen / K W Liu et al. | IOP Institute of Physics | 2008

  11. Electrical transport properties in nitrogen-doped p-type ZnO thin film

    National licence
    Z Y Xiao / Y C Liu / B H Li et al. | IOP Institute of Physics | 2006

  12. A high-speed photoconductive UV detector based on an Mg0.4Zn0.6O thin film

    National licence
    D Y Jiang / J Y Zhang / K W Liu et al. | IOP Institute of Physics | 2007

  13. Measurement of threading dislocation densities in GaN by wet chemical etching

    National licence
    J Chen / J F Wang / H Wang et al. | IOP Institute of Physics | 2006

  14. Pump–probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy

    National licence
    LETTER TO THE EDITOR
    C R Pidgeon / P J Phillips / D Carder et al. | IOP Institute of Physics | 2005

  15. Tunnel monitoring using multicore fibre displacement sensor

    National licence
    W N MacPherson / M Silva-Lopez / J S Barton et al. | IOP Institute of Physics | 2006

  16. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    National licence
    Paper
    L L Wu / D G Zhao / D S Jiang et al. | IOP Institute of Physics | 2013

  17. Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

    National licence
    Shuang Zhang / D G Zhao / D S Jiang et al. | IOP Institute of Physics | 2008

  18. Positive and negative effects of oxygen in thermal annealing of p-type GaN

    National licence
    Paper
    L L Wu / D G Zhao / D S Jiang et al. | IOP Institute of Physics | 2012

  19. Electrical properties of N-doped ZnO grown on sapphire by P-MBE

    National licence
    X Wang / Y M Lu / D Z Shen et al. | IOP Institute of Physics | 2007

  20. Implementation of vectorial bend sensors using long-period gratings UV-inscribed in special shape fibres

    National licence
    Donghui Zhao / Kaiming Zhou / Xianfeng Chen et al. | IOP Institute of Physics | 2004
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